Q1: Two Czochralski crystals are grown by mixing a small amount of Boron doped silicon with a large lump

of undoped silicon and

later the crystals are pulled from the melt. The resistivity of B-doped Silicon is 0.01 Ω-cm. For the first ingot, resistivity of the grown
crystal at mid-section was obtained to be 1 Ω-cm. While for the second crystal, the amount of Boron doped Si is changed such that the
resistivity of 0.5 Ω-cm was obtained at the mid-section.
A) Assuming all operating conditions remain the same, determine the increase in the amount of heavily doped Si needed for the second
crystal. Also, discuss whether your answer is universally true for all axial positions or only at the midpoint of the ingot.
B) For the first crystal, say ko = 0.75 and hole mobility, µp = 500 cm2 volt-1 sec-1. If pure undoped Si was added to return the melt to its
original volume after 50% of the crystal growth had been achieved, calculate the impurity concentration at the mid-point of the new
ingot grown from the modified melt. [15]
→

f=q¥
" "

⑨ Cs = Koco ( 1- f) I Ko -1

For the first

crystal
→
signs ,
=q÷%! =g%;z
similarly we can write for S ,

:& -=%÷=E÷.

the initial dopant cone

Thus the concentration in the mid section
-

depends only on

Neglecting
the volume
change ,
we can
simply double the amount
of heavily
doped polysilicon to achieve a
two-fold decrease in the
resistivity everywher
Thus Mz =
2m ,
→
universally true .

⑤
⑨ cnfj 's
'
Ko
-

0.75 pep 500

=
; -_

10-3=0.125×10^3
"

↳ •
mid =

¥mid =

1/4.6×10-19 ✗ 500×10-9×1 ✗ m→ = 1.25×10

cm→②
liquid concentration after 50% growth ce=¥ "%¥£ = =
1.66×10 '°cm→

Let original volume of meet =V ②

Volume left after 50% growth
=
V12
•
•

•
Gx 1- =D ✗ y c
'
=
E- = 8.3 ✗ 1015cm - 3
③
*° "

=5.23cm→-
" "

( f) 0.55
-

Then
, ↳ =
Koco 1- =
0.75×8.3×1015×11 -

③
 Q2: We are performing successive multiple diffusion on silicon surface. As per our requirement, we want 10m2 area in a silicon surface
for deposition and the remaining 40 m2 area is covered by mask which is prevented from Gallium doping. In the first step, Gallium is
pre-deposited for time (t1=30 min) and temperature (T1=900 °C) and in the next step Gallium is pre-deposited for time (t2=60 min) and
temperature (T2=1100 °C).
Find the thermal budget and dose of dopant in atom / m2 at that thermal budget. Given- Ea=1.455* 10-22 KCal/atom,
Do= 2 cm2/sec
Hint: Consider Solid Solubility (Cs) at 𝑻𝟐
10
T ,
= 900°C =
1173K

Tz = 1100°C = 1373K

t, =
30min 's
11-2--60 win
F- a =
1.955 ✗ 10-22 Kcal

Do = 2 cnet.ec
D. =
Do exp [ -1¥ ] ,

Dz = Do exp
/ -1<7-2 ]
%
Di-zxexpf-Y.LY?,II:Y??,tf?-)-- 9.633×10-17 ant

! .iÉ¥¥É° ]
' "
2.299×15
De - ex exp
=
any,
?⃝
?⃝
⑦ f)equivalent is called thermal
budget ② "

⑨team = Dit ,
+ Dztz =
(9.633×1517×30×60)-1 (2.299×154×60×60)=8.275×15
②
solid
solubility of Gallium (G) at Tzfrom graph
is taken as ↳ =
95×10-20
2×95×15%8=275×1011
D=
2↳¥DT_- =

Ta
= g. 619 ✗ 1020 atomfm

→
 MIDSEM PART 2

Q1: Phosphorus ions with energy of 100 keV are implanted in a Si wafer with 200 mm diameter at a dose of 5 x 1015cm-2. Given :
Rp = 0.3 µm, 𝜎p = 0.07 µm, mass of Phosphorus = 31 g/mol.
Assuming implant distribution to be Gaussian, calculate the velocity of ions, peak concentration and required beam current if the
implantation time is 90 seconds [10]

F- =
100 Kev D= 5×1015 cm
-2

Rp
Tp
-

=
0.3

0.07
µm
µm
E =
1-2 mjh y = =
✓ 7×100 ✗ 103 ✗ 1

31
. -6×10-19×6.02
✗ 10-3
✗ 1023

31
gfmol
②
=
m

q*v=E V =
788997.96 mfs

We know , ③ = F- DRP Cp

③
-2

Cp =
5✗ 1015 am
= 2. 85 ✗ 102° cm→
¥3.19 ✗ 0.07×10-9 em

Total no of ions implanted = area ✗ dose

1.57×1018 ②
.

=
(-1×102) ✗ (5 ×
10^5) =

implanted change 1.6×10-19×1.57 1018

Total
③
✗
Beam current = = = 2.79 MA
Implantation time 90
Q2: A vacuum vessel is evacuated by a vacuum pump via 4
pipes of different diameters connected in a combination of
series and parallel as shown in the picture.
The pressure at the right-hand side of thepipe1=0.15Pa
The pressure at the left-hand side of the pipe2= 0.01 Pa
The pressure at the right-hand side of pipe 3 = 0.2 Pa
The pressure at the left-hand side of the pipe4 =0.05 Pa
Length of pipe1 =350 mm ; Length of pipe2=280 mm
Length of pipe3 =370 mm ; Length of pipe4 = 220mm
d1=50mm ; d2=20mm ; d3=60mm ; d4=30mm
The pumping speed at the vacuum pump is 0.0015 m3/s,
Find out the pumping speed at the mouth of the vessel
The relationship between Conductance (C) and
throughput (Q) here is given by
Q = 50𝐷3 (P1-P2)

Given 4=0 35m i

↳ 0.28m
(
data We Pe )
=
know D= P,
.

C -

0.22m
↳ = 0 . 37m ; Lg =

50B£
also
di = 0.05m ; dz= 0.02m
' =
( p ,
-

pz)
dz= 0.06M ; dq= 0.03m

Sp = 0.0015 m%
: . C =
50B£
=É
>

for Piped :
4=50
q÷=%?;3 ; for Pipe 2 : ↳ =
50¥ 0.28

= 0.017857
② = 0 . 0019286

②
 I
equivalent of Pipe Land
¥ ¥ ⇐ ¥7857 -10.0014286=7-56
2
→ = + =

↳I = 0.0013227 ②
50×0,033
for Pipe 3 :
↳ =
sodI
↳
=
50×0.063
0.37
9 for Pipe 9 :
Cg -_50d÷g= 0.22

=
②
0.029189
② = 0.0061363

equivalent of pipe 3-and 9 →

¥ ÷ -1¥ -_o÷g -10%3,3=197.222
=

↳2 = 0.0050709
①
tal
Conductance)Cp = ↳ ,
1- ↳2 =
0.0013227-1 0.0050709 =
0.00639317
③
we know =
¥ +
÷ =
,÷fto÷g ,
=
823.0839

s = 0.00121999 m¥ ⑨