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2N7000
N-Channel Enhancement Mode Field Effect Transistor 60V,
200mA, 5 Ω

Product Overview
For complete documentation, see the data sheet.
These N-channel Small Signal MOSFETs are produced using ON Semiconductor's proprietary, high cell density, DMOS technology.
These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching
performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These
products are particularly suited for low-voltage, low-current applications.

Features
• Voltage Controlled Small Signal Switch

• High Saturation Current Capability

• Rugged and Reliable

• High Density Cell Design for Low RDS(ON)

Applications
• Small Servo Motor Control
• Power MOSFET Gate Drivers
• Assorted Switching Applications

2N7000 N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω pg 1 / 2

Part Electrical Specifications
RDS( RDS( RDS( Qg Qg
on) on) on)
Ma Ma Ma Typ Typ
Ch
VGS( x@ x@ x@ @ @ Pac
ann Co V(BR VGS ID PD Ciss
th) VGS VGS VGS VGS VGS kag Msl
el nfig )DSS Ma Ma Ma Ma Typ MS
Product Status Compilance Min = = = = = e Te
Pol ura x x x x (pF L
(V) 2.5 4.5 10 4.5 10 Typ mp
arit tion (V) (V) (A) (W) )
V V V V V e
y
(m (m (m (nC (nC
Ω) Ω) Ω) ) )

TO
N- 53 -
Ch Sin 60. 20. 0.3 500 60.
2N7000-D74Z Active 3.0 0.2 - 00. - - 92- NA 0
ann gle 0 0 5 0.0 0
0 3
el LF

TO
N- 53 -
Ch Sin 60. 20. 0.3 500 60.
2N7000-D75Z Active 3.0 0.2 - 00. - - 92- NA 0
ann gle 0 0 5 0.0 0
0 3
el LF

N- 53
Obsolet Ch Sin 60. 20. 0.3 500 60. TO
2N7000RLRA 3.0 0.2 - 00. - - NA 0
e ann gle 0 0 5 0.0 0 -92
0
el

N- TO
53
Ch Sin 60. 20. 0.3 500 60. -
2N7000 Active 3.0 0.2 - 00. - - NA 0
ann gle 0 0 5 0.0 0 92-
0
el 3

N-
Obsolet Ch Sin 60. 20. 0.3 53 500 60. TO
2N7000RLRAG 3.0 0.2 - 00. - - NA 0
e ann gle 0 0 5 0.0 0 -92
0
el

N- 53
Obsolet Ch Sin 60. 20. 0.3 500 60. TO
2N7000RLRMG 3.0 0.2 - 00. - - NA 0
e ann gle 0 0 5 0.0 0 -92
0
el

N- 53
Obsolet Ch Sin 60. 20. 0.3 500 60. TO
2N7000RLRPG 3.0 0.2 - 00. - - NA 0
e ann gle 0 0 5 0.0 0 -92
0
el

N- 53
Obsolet Ch Sin 60. 20. 0.3 500 60. TO
2N7000G 3.0 0.2 - 00. - - NA 0
e ann gle 0 0 5 0.0 0 -92
0
el

TO
N- 53 -
Ch Sin 60. 20. 0.3 500 60.
2N7000-D26Z Active 3.0 0.2 - 00. - - 92- NA 0
ann gle 0 0 5 0.0 0
0 3
el LF

2N7000 N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω pg 2 / 2