P2N2222A

Amplifier Transistors
NPN Silicon

Features
• These are Pb−Free Devices* http://onsemi.com

COLLECTOR
1
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic Symbol Value Unit 2
Collector −Emitter Voltage VCEO 40 Vdc BASE

Collector −Base Voltage VCBO 75 Vdc

3
Emitter−Base Voltage VEBO 6.0 Vdc
EMITTER
Collector Current − Continuous IC 600 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C

Total Device Dissipation @ TC = 25°C PD 1.5 W TO−92

Derate above 25°C 12 mW/°C CASE 29
STYLE 17
Operating and Storage Junction TJ, Tstg −55 to °C
Temperature Range +150
12 1
2
THERMAL CHARACTERISTICS 3 3
STRAIGHT LEAD BENT LEAD
Characteristic Symbol Max Unit
BULK PACK TAPE & REEL
Thermal Resistance, Junction to Ambient RqJA 200 °C/W AMMO PACK

Thermal Resistance, Junction to Case RqJC 83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum MARKING DIAGRAM
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
P2N2
222A
AYWW G
G

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)

ORDERING INFORMATION
Device Package Shipping†
P2N2222AG TO−92 5000 Units/Bulk
(Pb−Free)

P2N2222ARL1G TO−92 2000/Tape & Ammo

(Pb−Free)
†For information on tape and reel specifications,
*For additional information on our Pb−Free strategy and soldering details, please including part orientation and tape sizes, please
download the ON Semiconductor Soldering and Mounting Techniques refer to our Tape and Reel Packaging Specification
Reference Manual, SOLDERRM/D. Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

January, 2013 − Rev. 7 P2N2222A/D
 P2N2222A

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage V(BR)CEO Vdc
(IC = 10 mAdc, IB = 0) 40 −
Collector −Base Breakdown Voltage V(BR)CBO 75 Vdc
(IC = 10 mAdc, IE = 0) −
Emitter−Base Breakdown Voltage V(BR)EBO Vdc
(IE = 10 mAdc, IC = 0) 6.0 −
Collector Cutoff Current ICEX nAdc
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc) − 10
Collector Cutoff Current ICBO mAdc
(VCB = 60 Vdc, IE = 0) − 0.01
(VCB = 60 Vdc, IE = 0, TA = 150°C) − 10
Emitter Cutoff Current IEBO 10 nAdc
(VEB = 3.0 Vdc, IC = 0) −
Collector Cutoff Current ICEO nAdc
(VCE = 10 V) − 10
Base Cutoff Current IBEX nAdc
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc) − 20
ON CHARACTERISTICS
DC Current Gain hFE −
(IC = 0.1 mAdc, VCE = 10 Vdc) 35 −
(IC = 1.0 mAdc, VCE = 10 Vdc) 50 −
(IC = 10 mAdc, VCE = 10 Vdc) 75 −
(IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C) 35 −
(IC = 150 mAdc, VCE = 10 Vdc) (Note 1) 100 300
(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 1) 50 −
(IC = 500 mAdc, VCE = 10 Vdc) (Note 1) 40 −
Collector −Emitter Saturation Voltage (Note 1) VCE(sat) Vdc
(IC = 150 mAdc, IB = 15 mAdc) − 0.3
(IC = 500 mAdc, IB = 50 mAdc) − 1.0
Base −Emitter Saturation Voltage (Note 1) VBE(sat) Vdc
(IC = 150 mAdc, IB = 15 mAdc) 0.6 1.2
(IC = 500 mAdc, IB = 50 mAdc) − 2.0
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 2) fT MHz
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)C 300 −
Output Capacitance Cobo pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) − 8.0
Input Capacitance Cibo pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) − 25
Input Impedance hie kW
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2.0 8.0
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 0.25 1.25
Voltage Feedback Ratio hre X 10− 4
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) − 8.0
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) − 4.0
Small−Signal Current Gain hfe −
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 50 300
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 75 375
Output Admittance hoe mMhos
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 5.0 35
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 25 200
Collector Base Time Constant rb′Cc ps
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) − 150
Noise Figure NF dB
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz) − 4.0
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.

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 P2N2222A

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Max Unit
SWITCHING CHARACTERISTICS
Delay Time (VCC = 30 Vdc, VBE(off) = −2.0 Vdc, td − 10 ns
Rise Time IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) tr − 25 ns
Storage Time (VCC = 30 Vdc, IC = 150 mAdc, ts − 225 ns
Fall Time IB1 = IB2 = 15 mAdc) (Figure 2) tf − 60 ns

SWITCHING TIME EQUIVALENT TEST CIRCUITS

+30 V +30 V
1.0 to 100 ms, 1.0 to 100 ms, 200
200 +16 V
+16 V DUTY CYCLE ≈ 2.0% DUTY CYCLE ≈ 2.0%

0 0
1 kW -14 V 1k CS* < 10 pF
-2 V CS* < 10 pF
< 2 ns < 20 ns
1N914

Scope rise time < 4 ns -4 V

*Total shunt capacitance of test jig,
connectors, and oscilloscope.
Figure 1. Turn−On Time Figure 2. Turn−Off Time

1000
700
500 TJ = 125°C
hFE, DC CURRENT GAIN

300
200
25°C
100
70
-55°C
50
30 VCE = 1.0 V
20 VCE = 10 V

10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0 k
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain

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 P2N2222A

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.0
TJ = 25°C
0.8

0.6 IC = 1.0 mA 10 mA 150 mA 500 mA

0.4

0.2

0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IB, BASE CURRENT (mA)
Figure 4. Collector Saturation Region

200 500
IC/IB = 10 VCC = 30 V
300 IC/IB = 10
100 TJ = 25°C
200 t′s = ts - 1/8 tf IB1 = IB2
70 tr @ VCC = 30 V
50 TJ = 25°C
td @ VEB(off) = 2.0 V
100
td @ VEB(off) = 0
t, TIME (ns)

30
t, TIME (ns)

70
20 tf
50
30
10
7.0 20
5.0
10
3.0 7.0
2.0 5.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 5. Turn −On Time Figure 6. Turn −Off Time

10 10
RS = OPTIMUM f = 1.0 kHz
IC = 1.0 mA, RS = 150 W RS = SOURCE
8.0 RS = RESISTANCE 8.0
500 mA, RS = 200 W IC = 50 mA
NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

100 mA, RS = 2.0 kW 100 mA

6.0 50 mA, RS = 4.0 kW 6.0 500 mA
1.0 mA

4.0 4.0

2.0 2.0

0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS)

Figure 7. Frequency Effects Figure 8. Source Resistance Effects

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 P2N2222A

f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)

30 500
VCE = 20 V
20 TJ = 25°C
300
Ceb
CAPACITANCE (pF)

10 200

7.0

5.0
100
Ccb
3.0 70

2.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 9. Capacitances Figure 10. Current−Gain Bandwidth Product

1.0 +0.5
TJ = 25°C

0.8 0 RqVC for VCE(sat)

COEFFICIENT (mV/ °C)
V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 10
1.0 V -0.5
0.6
VBE(on) @ VCE = 10 V -1.0
0.4
-1.5

0.2
-2.0 RqVB for VBE
VCE(sat) @ IC/IB = 10
0 -2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 11. “On” Voltages Figure 12. Temperature Coefficients

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−92 (TO−226) 1 WATT

CASE 29−10
SCALE 1:1 ISSUE A
DATE 08 MAY 2012

12 1
2
3 3
STRAIGHT LEAD BENT LEAD

A
NOTES:
STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1994.
B 2. CONTROLLING DIMENSION: INCHES.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS
R UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN DIMENSIONS P
P AND L. DIMENSIONS D AND J APPLY BETWEEN DI­
L MENSIONS L AND K MINIMUM. THE LEAD
F DIMENSIONS ARE UNCONTROLLED IN DIMENSION
K P AND BEYOND DIMENSION K MINIMUM.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.44 5.21
B 0.290 0.310 7.37 7.87
X X D C 0.125 0.165 3.18 4.19
G D 0.018 0.021 0.46 0.53
F 0.016 0.019 0.41 0.48
H J G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
V C J 0.018 0.024 0.46 0.61
SECTION X−X K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
1 N N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
N R 0.135 --- 3.43 ---
V 0.135 --- 3.43 ---

A
NOTES:
R BENT LEAD 1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
B 2. CONTROLLING DIMENSION: INCHES.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS
UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN DIMENSIONS P
P AND L. DIMENSIONS D AND J APPLY BETWEEN
T DIMENSIONS L AND K MINIMUM. THE LEAD
DIMENSIONS ARE UNCONTROLLED IN DIMENSION
SEATING
PLANE K P AND BEYOND DIMENSION K MINIMUM.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.44 5.21
B 0.290 0.310 7.37 7.87
X X D C 0.125 0.165 3.18 4.19
G D 0.018 0.021 0.46 0.53
G 0.094 0.102 2.40 2.80
J J 0.018 0.024 0.46 0.61
V K 0.500 --- 12.70 ---
C N 0.080 0.105 2.04 2.66
SECTION X−X P --- 0.100 --- 2.54
R 0.135 --- 3.43 ---
1 N V 0.135 --- 3.43 ---

STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON52857E Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−92 (TO−226) 1 WATT PAGE 1 OF 2

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.

© Semiconductor Components Industries, LLC, 2019 www.onsemi.com

 TO−92 (TO−226) 1 WATT
CASE 29−10
ISSUE A
DATE 08 MAY 2012

STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:

PIN 1. EMITTER PIN 1. BASE PIN 1. ANODE PIN 1. CATHODE PIN 1. DRAIN
2. BASE 2. EMITTER 2. ANODE 2. CATHODE 2. SOURCE
3. COLLECTOR 3. COLLECTOR 3. CATHODE 3. ANODE 3. GATE

STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10:

PIN 1. GATE PIN 1. SOURCE PIN 1. DRAIN PIN 1. BASE 1 PIN 1. CATHODE
2. SOURCE & SUBSTRATE 2. DRAIN 2. GATE 2. EMITTER 2. GATE
3. DRAIN 3. GATE 3. SOURCE & SUBSTRATE 3. BASE 2 3. ANODE

STYLE 11: STYLE 12: STYLE 13: STYLE 14: STYLE 15:
PIN 1. ANODE PIN 1. MAIN TERMINAL 1 PIN 1. ANODE 1 PIN 1. EMITTER PIN 1. ANODE 1
2. CATHODE & ANODE 2. GATE 2. GATE 2. COLLECTOR 2. CATHODE
3. CATHODE 3. MAIN TERMINAL 2 3. CATHODE 2 3. BASE 3. ANODE 2

STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:
PIN 1. ANODE PIN 1. COLLECTOR PIN 1. ANODE PIN 1. GATE PIN 1. NOT CONNECTED
2. GATE 2. BASE 2. CATHODE 2. ANODE 2. CATHODE
3. CATHODE 3. EMITTER 3. NOT CONNECTED 3. CATHODE 3. ANODE

STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25:
PIN 1. COLLECTOR PIN 1. SOURCE PIN 1. GATE PIN 1. EMITTER PIN 1. MT 1
2. EMITTER 2. GATE 2. SOURCE 2. COLLECTOR/ANODE 2. GATE
3. BASE 3. DRAIN 3. DRAIN 3. CATHODE 3. MT 2

STYLE 26: STYLE 27: STYLE 28: STYLE 29: STYLE 30:
PIN 1. VCC PIN 1. MT PIN 1. CATHODE PIN 1. NOT CONNECTED PIN 1. DRAIN
2. GROUND 2 2. SUBSTRATE 2. ANODE 2. ANODE 2. GATE
3. OUTPUT 3. MT 3. GATE 3. CATHODE 3. SOURCE

STYLE 31: STYLE 32: STYLE 33: STYLE 34: STYLE 35:
PIN 1. GATE PIN 1. BASE PIN 1. RETURN PIN 1. INPUT PIN 1. GATE
2. DRAIN 2. COLLECTOR 2. INPUT 2. GROUND 2. COLLECTOR
3. SOURCE 3. EMITTER 3. OUTPUT 3. LOGIC 3. EMITTER

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON52857E Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−92 (TO−226) 1 WATT PAGE 2 OF 2

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.

© Semiconductor Components Industries, LLC, 2019 www.onsemi.com

 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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