FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16675

Generic Copy

Issue Date: 21-Jul-2011

TITLE: NGD8201 (Gen 4 IGBT) transfer to CZ4 wafer fab

PROPOSED FIRST SHIP DATE: 2-Jan-2012

AFFECTED CHANGE CATEGORY(S): Wafer Fab location

FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION:

Contact your local ON Semiconductor Sales Office or <frank.knoll@onsemi.com>

SAMPLES: Contact your local ON Semiconductor Sales Office

ADDITIONAL RELIABILITY DATA: Available

Contact your local ON Semiconductor Sales Office or <nicholas.crichton@onsemi.com>

NOTIFICATION TYPE:

Final Product/Process Change Notification (FPCN)

Final change notification sent to customers. FPCNs are issued at least 90 days prior to
implementation of the change.

ON Semiconductor will consider this change approved unless specific conditions of

acceptance are provided in writing within 30 days of receipt of this notice. To do so, contact
<quality@onsemi.com>.

DESCRIPTION AND PURPOSE:

This FPCN is to inform our customers of a change in wafer Fab location that affects products
that are manufactured using the Gen 4 IGBT process. The Gen 4 products are currently
fabricated in the Aizu Japan wafer Fab but have been qualified to be processed in the CZ4
wafer Fab located in Roznov (Czech Republic). The process now qualified in Roznov is an
equivalent copy of the Aizu process.
Starting January of 2012, ON Semiconductor will be migrating the Gen 4 IGBT products from
Aizu to CZ4.

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RELIABILITY DATA SUMMARY:
# Test Name Test Conditions End Point Req’s Test (rej/ ss) (rej/ ss) (rej/ ss)
Results
Read Point SGD8201
SGD8201 NGB8206
Qual Lot B
Qual Lot A Qual Lot C
(S10391 &
(S05845) (S05942)
S10884)
Sample preparation Initial
1 Prep various --- done done done
and initial part testing Electrical
High Temp Reverse
TA = 175°C for 1008
HTRB Bias c = 0, Room Initial 0/80 0/80 0/80
hours
Vdss=+366V
504 Hrs 0/80 0/80 0/80
1008 Hrs 0/80 0/80 0/80
High Temp Gate Bias TA = 175°C for 1008
HTGB c = 0, Room Initial 0/80 0/80 0/80
Vgss=+20V hours
504 Hrs 0/80 0/80 0/80
1008 Hrs 0/80 0/80 0/80
MSL 1
PC IR @ 260 °C c = 0, Room
Preconditioning
Temperature Cycling- Post PC
TC-PC -55°C to +150°C c = 0, Room 0/80 0/80 0/80
PC Electrical
500 TC 0/80 0/80 0/80
1000 TC 0/80 0/80 0/80
Ta=+25°C, delta
Post PC
IOL-PC Intermittent OL-PC Tj=100°C c = 0, Room 0/80 0/80 0/80
Electrical
On/of = 2 min (Dpak)
7,500 cyc 0/80 0/80 0/80
15,000 cyc 0/80 0/80 0/80
Ta=+25°C, delta
Post PC
IOL-PC Intermittent OL-PC Tj=100°C c = 0, Room 0/80
Electrical
On/of = 3.5 min (Dpak)
4,286cyc 0/80
8,572 cyc 0/80
High Humidity, High
H3TRB Temp= +85°C, Post PC
temperature, Reverse c = 0, Room 0/80 0/80 0/80
- PC RH=85% for 1008 hrs. Electrical
Bias
504 Hrs 0/80 0/80 0/80
1008 Hrs 0/80 0/80 0/80
Temp= +130°C, 15psi, Post PC
AC- PC Autoclave - PC c = 0, Room 0/80 0/80 0/80
RH=100% for 96 hrs Electrical
96 Hrs 0/80 0/80 0/80
Inductive Op Life c = 0, Room Initial 0/7 0/7
504 Hrs 0/7 0/7
1008 Hrs 0/7 0/7
Negative Transient c = 0, Room Initial 0/30 0/30
168 Hrs 0/30 0/30
Reverse Battery c = 0, Room Initial 0/30 0/30
48 Hrs 0/30 0/30
Abnormal Operating
c = 0, Room Initial 0/10 0/10
Life
500 cyc 0/10 0/10
1000 cyc 0/10 0/10
Destructive Physical Compare to AEC
0/2 0/2 0/2
DPA Analysis Following TC + PC Criteria
Destructive Physical Compare to AEC
0/2 0/2 0/2
DPA Analysis Following H3TRB + PC Criteria
BPS Bond Pull Strength Condition C Min Cpk 1.67 0/10 0/10
BS Bond Shear Min Cpk 1.67 0/10 0/10

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CHANGED PART IDENTIFICATION:

N/A

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List of affected General Parts:

OPN Replacement part

NGD8201NT4G NGD8201ANT4G
NGB8202NT4G NGB8202ANT4G

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