1 Abrupt junction approximation

The assumption that there is an abrupt discontinuity in space charge density

between the space charge region and neutral semiconductor region.

2 Depletion layer approximation

The number of carriers is almost zero due to the strong built-in electric field in the
space charge region, that the charge in the space charge region is almost completely
provided ionized impurity, this space charge region is called depletion layer.

3 Built-in electric field

An electric field due to the separation of positive and negative space charge
densities in the depletion region.

4 Built-in potential harrier

The electrostatic potential difference between the p and n regions of a pn junction
in thermal equilibrium.
pn p n
5 Depletion region/space charge region/barrier region

The region on either side of the metallurgical junction in which there is a net
charge density due to ionized donors in the n-region and ionized acceptors in the p
region.
n p

pn
pn n p

pn pn
0
6 Depletion layer capacitance / junction capacitance/barrier capacitance

The capacitance of the pn junction under reverse bias.

pn
7 Diffusion capacitance
The capacitance of a forward-biased pn junction due to minority carrier storage
effects.
pn
pn n n

8 Diffusion conductance
The ratio of a low-frequency, small-signal sinusoidal current to voltage in a
forward-biased pn junction.
pn
9 Diffusion resistance
The inverse of diffusion conductance. The ratio of a low-frequency, small-signal
sinusoidal voltage to current in a forward-biased pn junction.
pn
10 Space charge width
The width of the space charge region, a function of doping concentrations and
applied voltage.
p n
11 Hyperabrupt junction
A pn junction in which the doping concentration on one side decreases away from
the metallurgical junction to achieve n specific capacitance-voltage characteristic.
pn
pn
12 Linearly graded junction
A pn junction in which the doping concentrations on either side of the
metallurgical junction are approximated by a linear distribution.
pn
13 Metallurgical junction
The interface between the p- and n-doped regions of a pn junction.
pn p n
14 One-sided junction
A pn junction in which one side of the junction is much more heavily doped than
the adjacent/other side.
pn
pn N_A N_D p
n pn
N_A>>N_D N_A<<N_D pn
15 Varactor diode
A diode whose reactance can be varied in a controlled manner with bias voltage.

16 Avalanche breakdown
The process whereby a large reverse-bias pn junction current is created due to the
generation of electron-hole pairs by the collision of electrons and/or holes with
atomic electrons within the space charge region.

pn
17 Tunnel breakdown /
Maybe top of the valence band of the p region is higher than the bottom of
conduction band of the n region with the reverse bias voltage increases in heavily
doped pn junction. The electrons in valence band of the p region can directly reach
the conduction band of the n region through the band gap by tunnel effect, to
become the carrier in the conduction band. When the reverse bias voltage at the
junction increases to a certain extent, tunneling current will sharply increase,
showing breakdown, called tunneling breakdown, also known as Zener breakdown.
pn p n p
n

18 Carrier injection
The flow of carriers across the space charge region of a pn junction when a voltage
is applied.
pn p n
19 Critical electric field
The peak electric field in the space charge region at breakdown.
pn
20 Forward bias
The condition in which a positive voltage is applied to the p region with respect to
the n region of a pn junction so that the potential barrier between the two regions is
lowered below the thermal-equilibrium value.
p n
21 Reverse bias
The condition in which a positive voltage is applied to the n region with respect to
the p region of a pn junction so that the potential barrier between the two regions
increases above the thermal-equilibrium built-in potential barrier.
pn n p p n

22 Generation current
The reverse-bias pn junction current produced by the thermal generation of
electron-hole pairs within the space charge region.
pn
23 long diode
A pn junction diode in which both the neutral p and n regions are long compared
with the respective minority carrier diffusion length.
p n
24 short diode
A pn junction diode in which at least one of the neutral p or n regions is short
compared to the respective minority carrier diffusion length.
p n pn
25 Recombination current
The forward-bias pn junction current produced as a result of the how of electrons
and holes that recombine within the space charge region.
pn
26 Reverse saturation current
The ideal reverse-bias current in a pn junction.
pn
27 Storage time
The time required for the excess minority carrier concentrations at the space
charge edge to go from their steady-state values to zero when the diode is switched
forward to reverse bias.
pn

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39
40
41 Transistor leakage current I_CEO I_CEO
Base is open, applied the reverse DC voltage of determined value at both ends of
the collector - emitter, the detected current I_CEO is the reverse leakage current of
the measured transistor.

I_CEO
42 Transistor saturation voltage V_CES V_CES
When the two junctions of the transistor (collector junction emitter junction) in
the forward bias, is called the transistor is saturated. At this moment, the voltage
drop because of the obstruction of Collector junction to current, is called the reverse
saturation voltage, denoted V_CES

V_CES
43 Bandgap narrowing
The reduction in the forbidden energy bandgap with high emitter doping
concentration.

44 High injection
If the injected non-equilibrium minority carrier concentration is comparable to or
even greater than the equilibrium majority carrier concentration, it is called high
injection.

45 Low injection
If the injected non-equilibrium minority carrier concentration is far less than the
equilibrium majority carrier concentration, it is called low injection.

46 Small-signal
The signal amplitude is low, and meets the condition V<< Kt/q =26mv
V<< Kt/q =26mv
47 Common-base current gain
The ratio of collector current to emitter current.

48 Common- emitter current gain

The ratio of collector current to base current.

49 Base transport factor

The factor in the common-base current gain that accounts for recombination in
the neutral base width.

50 Emitter injection efficiency factor

The factor in the common-base current gain that takes into account the injection
of carriers from the base into the emitter.

51 Base Gummel number Gummel

The total majority carrier charge corresponding to the unit junction area in the
base and is known as the base Gummel number; defined as Q_B, Q_B= _0^(W_B)?
N_B (x) dx Gummel
Q_B, Q_B= _0^(W_B)? N_B (x) dx
52 Base width modulation, early effect / /

The change in the neutral base width with C-E or C-B voltage.
C-E C-B

53 Base broadening effect / Kirk

The occurring phenomenon when the base width of bipolar Junction Transistor is
high current, is known as the base region broadening effect, also known as the Kirk
effect.
BJT Kirk

npn-BJT
( ) 0

( ) 0

(
) Jc
Jc/(qvs)>Nc Nc
Kirk

54 Early voltage
The value of voltage (magnitude) at the intercept on the voltage axis obtained by
extrapolating the I_C versus V_CE curves to zero current.
I-V
55 Base region self-bias effect
The base region current flows level through the base region, produces voltage
drop in the active region, let the potential close to the base-bar and the potential
away from the base-bar are not equal. And emitting region doping concentration is
high, the potential is equal, so that the E-B junction voltage drop is not equal, this
effect is caused by the active base region resistance r_b1, called base region self-bias
effect

E-B
r_b1
56 Current crowding
The nonuniform current density across the emitter junction areacreated by a
lateral voltage drop in the base region due to a finite base current and base
resistance.

57 Cutoff
The bias condition in which zero- or reverse-bias voltages are applied to both
transistor junctions, resulting in zero transistor currents.

58 Cutoff frequency / f_T

The frequency at which the magnitude of the common emitter current gain is
unity.
 1
59 Alpha cutoff frequency
The frequency at which the magnitude of the common-base current gain is 1/ 2
of its low-frequency value; also equal to the cutoff frequency.
1/ 2
60 Beta cutoff frequency
The frequency at which the magnitude of the common emitter current gain is 1/
2 of its low-frequency value.
1/ 2
61 Base transit time
The time that it takes a minority carrier to cross the neutral base region.

62 Collector depletion region transit time

The time that it takes a carrier to be swept across the B-C space charge region.
B-C
63 Collector capacitance charging time
The time constant that describes the time required for the B-C and
collector-substrate space charge widths to change with a change in emitter current.
B-C

64 Emitter-base junction capacitance charging time E-B

The time constant describing the time for the B-E space charge width to change
with a change in emitter current.
B-E
65 Forward-active
The bias condition in which the B-E junction is forward biased and the B-C junction
is reverse biased.
B-E B-C
66 Inverse-active
The bias condition in which the B-E junction is reverse biased and the B-C junction
is forward biased.
B-E B-C
67 Output conductance
The ratio of a differential change in collector current to the corresponding
differential change in C-E voltage.
C-E
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