MADE EASY 2 0 23 WworkbO0K | Detailed Explanations of a Try Yourself Questions Electronics Engineering Electronic Devices and Circuits bs GE) MADE EASYBasics of Semiconductor Physics Detalled Explanation f Try Yourself Questions iB sol. 72. soe aon bow ta conto ott bandaen Eso. Given the probability of state being empty is 0.9258 ° 1-A(B) = 0.9258 Tne energy level being occupied by electron is f(E) “ AE) = 10.9258 = 0.0742 ©) = — oo7az = —1_. tee ‘ wwvw.madeeasypublications.org MADE ERSY © CopyrightMADE EASY Detailed Explanations of Try Yourself Questions: ESE + GATE 2023 3 Publestions tee 2 13.477 E-& AT E-E, = 2.52kT E = Ep+252kT The energy level 2.52 kT above the Fermi energy is occupied by electron with probability 0.0742 2.523 Eg sol. The diffusion current density is defined as an = 90,0 Jn = Inge substituting the given values, we get = 16x10") x¢26{ 4% 10" - (0) 0.09 = (1.6x10"%) a “Sco 0.090.010 m 16x10 x25 ~ 4x 10%4— (0) r{0) = 1.75 10" em a Intrinsic carrier concentration in semiconductor is given by 1, = AINGNy exel-E, /2kT] Given the bandgap energy Ey, = U21 eV E,g= 2.4 eV ‘The ratio of intrinsic carrier concentration of semiconductor B to semiconductor A is obtained as, nip _ VEN expl-Eyg /2kT] Mia a{NeNy exDI-Eq, /2KT] = expl-(Eyg- Eq) 2T] Mie = 4.152107 Ma sopuppppeeeeeenen MADE EASY womadeeesypublatonsorg) © Copyright JOHOR PubllaationsDetalled Explanation f Try Yourself Questions sol (8 —1) = 1,(69— 1) (15x 10°F a <= 2.25x 10°om® 0 2 101972 8 S107)" 2.25% 10%em? Pp 10) For minority carriers, AT 1 He 20250 450 = 11.66 cms onthe side D,= 7 4, 20.0259%700 = 18.13 om*Js on the p side Dx, = Vin 6x10 10 = 1.08 x 10% om Ly = {Dnt = V18.13x0.1% 10 = 1.35 x 10% om | (Dp. Dy I= A eee Ze 11.66 5, 18.13, 2.25105 o.0108 o.00135 . ( ) = 16x 107 x0.0001| 2,25 10° = 4370x105 T= 1,{0050029 1.058 x 10°° A in forward bias [= -1, =-4.37 x 10" Ain reverse bias. wwwmadeeasypublications.org MADE ERSY © CopyrightMADE EASY Detailed Explanations of Try Yourself Questions: ESE + GATE 2023 5 Publestions Sol. Built in voltage, with no. external voltage applied the voltage (Vj) across the p-n junction is given by ace 10° x 108 (15x10 V, = 25mVi = 25%29.12mV V,=3 728 mV with ofthe depletion region Wp = Xn + @ a (ii) y= 10%, By solving equation (i) and (ii) = 00S pmandx, = 0.29 yn me For P*N junction diode w= PERI Tog 1.6x 107% 3x 10% 1.04 x 10°°° Fim = 1.04 x 10°? Ficm 1.802 x 10°5 cm. 1 a > (ce copynane MADE EASY SERIES AEE)Optoelectronic Devices @ Detalled Explanation of Try Yourself Questions (b) Given photocurrent density J, = 10 mA/em® The open circuit voltage of solarcellis or Veo = where n,= 1.5 x 10° em? [Dyno = V25x5x 107 = 35.4 um Dytog = 10x10" = 10 um (1.6% 107) x (15x 10"°}F x 2. +—_10_| (85.4 10)(5x10%) " (10x10*)(10"*) | . Us = 36x 10 Alcm? singe the solar intensity is increased by 10 times > J, = 10x 10mAlcm? = 100 mAlem? Given temperature remains constant henes the reverse saturation current clensity also constant. . Ug = 86x 10 Alem? . The open-circuit voltage is = (0025 nf 14100310" = 0.565V wwwmadeeasypublications.org MADE ERSY © CopyrightMADE EASY Detailed Explanations of Try Yourself Questions : ESE + GATE 2023 Publestions as For pn Sidiode N,>> Ny e 8 roe 1 [a2 = 10 1.6 x10? (1.5 10") x, 1.610" «(18x 108) x 3,943 x 10-75 A Y then Ip = Is #) Le e108 ( 0.50 } Ip = 8.943% 10" oxp| eno 61.36 x 10-7 61.36 pAField Effect Transistor Detalled Explanation 9 of Try Yourself Questions set Since Vpg > Vag MOSFET is in saturation region 1 a Gon linn = "5 100MA = K2—V4)? (143A) Fas Vel Eas) 110 wA_=_k(2=Vy)? (14 5A) 400 _ 1484 110 ~ 145% 2 = 0.0588 V+" (a) n= new concentration of electrons at the surface ‘ng = equilibrium concentration of electrons me oe 5 em? tet = 18x10" ty = Teas 18H 10 one n= mer yy Lis W = surface potential r (3x10) xT {0 axto) v= Zin 2) = 0.026 -0.612V +m] 60 mera 708 (b) wwwmadeeasypublications.org MADE ERSY © Copyright