SM3307PSQA/SM3307PSQG ®

P-Channel Enhancement Mode MOSFET

Features Pin Description

Top View Bottom View Top View Bottom View

· -30V/-33A,
RDS(ON) =18mW(max.) @ VGS =-10V DD DDD
D
DD
RDS(ON) =30mW(max.) @ VGS =-4.5V
SG G
· Super High Dense Cell Design SS SSS

· Reliable and Rugged DFN3x3-8(punch type) DFN3x3-8(saw type)

· Lead Free and Green Devices Available ( 5,6,7,8 )

D D DD
(RoHS Compliant)

(4)
Applications G

· Power Management in Notebook Computer,

Portable Equipment and Battery Powered
S S S
Systems. (1, 2, 3)

P-Channel MOSFET

Ordering and Marking Information

SM3307PS Package Code
QA : DFN3x3-8 (punch type)
QG : DFN3x3-8 (saw type)
Assembly Material
Operating Junction Temperature Range
Handling Code C : -55 to 150 oC
Temperature Range Handling Code
TR : Tape & Reel (3000ea/reel)
Package Code Assembly Material
G : Halogen and Lead Free Device
SM
SM3307PS QA/QG : 3307 XXXXX - Date Code
XXXXX

Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.

Copyright ã Sinopower Semiconductor, Inc. 1 www.sinopowersemi.com

Rev. A.2 - January, 2013
SM3307PSQA/SM3307PSQG ®

Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

Symbol Parameter Rating Unit

V DSS Drain-Source Voltage -30
V
VGSS Gate-Source Voltage ±25
T A =25°C -11
I Da Continuous Drain Current (V GS =-10V)
T A =70°C -8.5
a
ID M 300ms Pulsed Drain Current (V GS =-10V) -80
d T C =25°C -33 A
ID Continuous Drain Current (V GS =-10V)
T C =100°C -21
a
IS Diode Continuous Forward Current -3
b
I AS Avalanche Current, Single pulse (L=0.1mH) -24
b
E AS Avalanche Energy, Single pulse (L=0.1mH) 29 mJ
TJ Maxim um Junction Temperature 150
°C
TST G Storage Tem perature Range -55 to 150
a T A =25°C 3.1
PD Maxim um Power Dissipation
T A =70°C 2
W
d T C =25°C 29
PD Maxim um Power Dissipation
T C =100°C 12
t £ 10s 40
RqJA a,c Therm al Resistance-Junction to Am bient
Steady State 75 °C/W
d
RqJC Therm al Resistance-Junction to Case Steady State 4.2
2
Note a：Surface Mounted on 1in pad area, t £ 10sec.
o o
Note b：UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature Tj=25 C).
Note c：Maximum under Steady State conditions is 75 °C/W .
o
Note d：The power dis sipation P D is based on TJ(MAX) = 150 C, and it is useful for reduc ing junc tion-to-case thermal
res istance ( RqJC ) when additional heat sink is used.

Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Static Characteristics
BVDSS Drain-Source Breakdown Voltage V GS=0V, ID S=-250mA -30 - - V
V DS=-24V, VGS=0V - - -1
I DSS Zero Gate Voltage Drain Current mA
TJ=85°C - - -30
VGS(th) Gate Threshold Voltage V DS=V GS, I DS=-250mA -1.5 -2 -2.5 V
IGSS Gate Leakage Current V GS=±25V, V DS=0V - - ±100 nA
V GS=-10V, ID S=-11A - 14 18
RDS(ON) e Drain-Source On-state Resistance mW
V GS=-4.5V, I DS=-4A - 22 30

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Rev. A.2 - January, 2013
SM3307PSQA/SM3307PSQG ®

Electrical Characteristics (Cont.) (TA = 25°C Unless Otherwise Noted)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Diode Characteristics
e
VSD Diode Forward Voltage ISD =-1A, VGS=0V - -0.7 -1 V
f
trr Reverse Recovery Time - 19 - ns
f ISD =-11A, diSD /dt=100A/ms
Qrr Reverse Recovery Charge - 10 - nC
f
Dynamic Characteristics
Rg Gate Resistance VGS =0V, VDS =0V,F=1MHz - 3 - W
C iss Input Capacitance VGS =0V, - 1000 -
Coss Output Capacitance VDS=-15V, - 210 - pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance - 150 -
t d(ON) Turn-on Delay Time - 8 -
tr Turn-on Rise Time VDD=-15V, RL=15W, - 12 -
IDS=-1A, VGEN=-10V, ns
td(OFF) Turn-off Delay Time RG=6W - 32 -
tf Turn-off Fall Time - 16 -
f
Gate Charge Characteristics
Qg Total Gate Charge - 21 -
VDS=-15V, VGS=-10V,
Qgs Gate-Source Charge - 2.6 - nC
IDS=-11A
Qgd Gate-Drain Charge - 6.2 -
Note e : Pulse test ; pulse width£300ms, duty cycle£2%.
Note f : Guaranteed by design, not subject to production testing.

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Rev. A.2 - January, 2013
SM3307PSQA/SM3307PSQG ®

Typical Operating Characteristics

Power Dissipation Drain Current

3.5 12

3.0
10

2.5

-ID - Drain Current (A)

8
Ptot - Power (W)

2.0
6
1.5

4
1.0

2
0.5
o o
TA=25 C TA=25 C,VG=-10V
0.0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Thermal Transient Impedance

300 2
Normalized Transient Thermal Resistance

100 1 Duty = 0.5

it

0.2
m
Li
n)
(o

0.1
-ID - Drain Current (A)

ds

10
R

300ms 0.05
0.1
1ms
0.02

1 10ms
0.01

100ms
0.01 Single Pulse
1s
0.1 DC

2
Mounted on 1in pad
o o
TA=25 C RqJA : 40 C/W
0.01 1E-3
0.01 0.1 1 10 100 300 1E-4 1E-3 0.01 0.1 1 10 100

-VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

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Rev. A.2 - January, 2013
SM3307PSQA/SM3307PSQG ®

Typical Operating Characteristics (Cont.)

Output Characteristics Drain-Source On Resistance

80 50
VGS= -7,-8,-9,-10V -6V
45
70
40

RDS(ON) - On - Resistance (mW)

60 -5V
35 VGS=-4.5V
-ID - Drain Current (A)

50 -4.5V 30

40 25
-4V
20
30
VGS=-10V
15
20 -3.5V
10
10
-3V 5

0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50

-VDS - Drain-Source Voltage (V) -ID - Drain Current (A)

Gate-Source On Resistance Gate Threshold Voltage

70 1.6
IDS=-11A IDS=-250mA

60 1.4
Normalized Threshold Voltage
RDS(ON) - On Resistance (mW)

1.2
50

1.0
40
0.8
30
0.6

20
0.4

10 0.2

0 0.0
2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

-VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

Copyright ã Sinopower Semiconductor, Inc. 5 www.sinopowersemi.com

Rev. A.2 - January, 2013
SM3307PSQA/SM3307PSQG ®

Typical Operating Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

2.00 80
VGS = -10V
1.75 IDS = -11A
Normalized On Resistance

1.50

-IS - Source Current (A)

10
1.25 o
Tj=150 C

1.00 T j=25 C
o

0.75
1

0.50

0.25
o
RON@Tj=25 C: 14mW
0.00 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

1500 10
Frequency=1MHz
VDS=-15V
1350 9 I =-11A
DS

1200 8
-VGS - Gate - source Voltage (V)

1050 7
C - Capacitance (pF)

Ciss
900 6

750 5

600 4

450 3

300 2
Coss
Crss
150 1

0 0
0 5 10 15 20 25 30 0 3 6 9 12 15 18 21

-VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

Copyright ã Sinopower Semiconductor, Inc. 6 www.sinopowersemi.com

Rev. A.2 - January, 2013
SM3307PSQA/SM3307PSQG ®

Avalanche Test Circuit and Waveforms

VDS tAV
L

DUT EAS
VDD
RG
VDD
tp IAS
IL
VDS
0.01W
tp VDSX(SUS)

Switching Time Test Circuit and Waveforms

VDS
RD
td(on) tr td(off) tf
DUT
VGS
VGS 10%
RG
VDD
tp

90%
VDS

Copyright ã Sinopower Semiconductor, Inc. 7 www.sinopowersemi.com

Rev. A.2 - January, 2013
SM3307PSQA/SM3307PSQG ®

Package Information
DFN3x3-8(punch type)
D A

E1
E A1
D1 A3
E2
E3

K
L

e b

S DFN3x3-8 RECOMMENDED LAND PATTERN

Y
M MILLIMETERS INCHES
B
O
L MIN. MAX. MIN. MAX.
A 0.80 1.00 0.031 0.039

A1 0.00 0.05 0.000 0.002

A3 0.10 0.25 0.004 0.010

b 0.24 0.35 0.009 0.014

D 2.90 3.10 0.114 0.122
D1 2.25 2.45 0.089 0.096

E 3.10 3.30 0.122 0.130

E1 2.90 3.10 0.114 0.122

E2 1.65 1.85 0.065 0.073

E3 0.56 0.58 0.022 0.023

e 0.65 BSC 0.026 BSC UNIT: mm

K 0.475 0.775 0.019 0.031
L 0.30 0.50 0.012 0.020

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Rev. A.2 - January, 2013
SM3307PSQA/SM3307PSQG ®

Package Information
DFN3x3-8(saw type)
D A
A1
A3

b
E

e
Pin 1

PIN#1 IDENTIFICATION
o
L CHAMFER 0.300X45

8 1
1.950 REF

7 2
b
E1
e

6 3

5 4

D1
K
L

S DFN3x3-8 RECOMMENDED LAND PATTERN

Y
M MILLIMETERS INCHES
B
O 2.45
L MIN. MAX. MIN. MAX.
0.4 0.4
A 0.70 1.00 0.028 0.039

A1 0.00 0.05 0.000 0.002

A3 0.203 REF 0.008 REF

b 0.25 0.40 0.010 0.016 1.65

D 2.90 3.10 0.114 0.122
0.55
E1 2.25 2.55 0.089 0.1
E 2.90 3.10 0.114 0.122 0.65
D1 1.65 1.9 0.065 0.075 0.4
e 0.65 BSC 0.026 BSC
L 0.30 0.50 0.012 0.020
UNIT: mm
K 0.43 - 0.017 -

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Rev. A.2 - January, 2013
SM3307PSQA/SM3307PSQG ®

Carrier Tape & Reel Dimensions

OD0 P0 P2 P1 A

E1
F

W
B0

K0 A0 A
OD1 B
B

SECTION A-A

T
SECTION B-B

d
H
A

T1

Application A H T1 C d D W E1 F
12.4+2.00 13.0+0.50
330.0±2.00 50 MIN. -0.00 -0.20 1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.05

DFN3x3-8 P0 P1 P2 D0 D1 T A0 B0 K0
1.5+0.10 0.6+0.00
4.0±0.10 8.0±0.10 2.0±0.05 -0.00 1.5 MIN. 3.35±0.20 3.35±0.20 1.30±0.20
-0.4

(mm)

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Rev. A.2 - January, 2013
SM3307PSQA/SM3307PSQG ®

Taping Direction Information

DFN3x3-8(punch type)

USER DIRECTION OF FEED

DFN3x3-8(saw type)
USER DIRECTION OF FEED

Classification Profile

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Rev. A.2 - January, 2013
SM3307PSQA/SM3307PSQG ®

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to Tsmax) (ts)

Average ramp-up rate

3 °C/second max. 3°C/second max.
(Tsmax to TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 See Classification Temp in table 2
(Tp)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max.

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)

3 3
Package Volume mm Volume mm
Thickness <350 ³350
<2.5 mm 235 °C 220 °C
³2.5 mm 220 °C 220 °C
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package Volume mm 3 Volume mm 3 Volume mm 3
Thickness <350 350-2000 >2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
³2.5 mm 250 °C 245 °C 245 °C

Reliability Test Program

Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HOLT JESD-22, A108 1000 Hrs, Bias @ 125°C
PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -65°C~150°C

Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5642050

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Rev. A.2 - January, 2013