AON7200

30V N-Channel MOSFET

General Description Product Summary

The AON7200 uses trench MOSFET technology that is VDS 30V

uniquely optimized to provide the most efficient high ID (at VGS=10V) 40A
frequency switching performance. Conduction and RDS(ON) (at VGS=10V) < 8mΩ
switching losses are minimized due to an extremely low
RDS(ON) (at VGS = 4.5V) < 11mΩ
combination of RDS(ON) and Crss.

100% UIS Tested

100% Rg Tested

DFN 3x3 EP D
Top View Bottom View Top View

1 8

2 7

3 6

4 5
G

Pin 1 S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 40
ID
Current G TC=100°C 31 A
C
Pulsed Drain Current IDM 117
Continuous Drain TA=25°C 15.8
IDSM A
Current TA=70°C 12.7
Avalanche Current C IAS, IAR 28 A
Repetitive avalanche energy L=0.1mH C EAS, EAR 39 mJ
TC=25°C 26
B
PD W
Power Dissipation TC=100°C 10.4
TA=25°C 3.1
PDSM W
Power Dissipation A TA=70°C 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 25 40 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 62 75 °C/W
Maximum Junction-to-Case Steady-State RθJC 4 4.8 °C/W

Rev 3: March 2011 www.aosmd.com Page 1 of 6

 AON7200

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 1.85 2.4 V
ID(ON) On state drain current VGS=10V, VDS=5V 120 A
VGS=10V, ID=20A 6.7 8
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 9.2 11
VGS=4.5V, ID=15A 9 11 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 60 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current 30 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 870 1090 1300 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 340 490 640 pF
Crss Reverse Transfer Capacitance 22 38 53 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.4 0.9 1.4 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 12 16 20 nC
Qg(4.5V) Total Gate Charge 5 7 9 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 2 2.5 3 nC
Qgd Gate Drain Charge 1.5 2.5 3.5 nC
tD(on) Turn-On DelayTime 5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 2 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 16 ns
tf Turn-Off Fall Time 2 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 10 13 16 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 20 25 30 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 3: March 2011 www.aosmd.com Page 2 of 6

 AON7200

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 50
10V
4V VDS=5V
40
60 4.5V

30
3.5V
ID (A)

ID(A)
40
20
125°C
20
10
VGS=3V 25°C

0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4

VDS (Volts) VGS(Volts)

Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

15 1.6
Normalized On-Resistance VGS=10V
ID=20A
12
1.4
VGS=4.5V
RDS(ON) (mΩ )

9
1.2 VGS=4.5V
6 ID=15A
VGS=10V
1
3

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
ID (A) Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E)
18
(Note E)

40 1.0E+02
ID=20A
35 1.0E+01

30 40
1.0E+00

25
RDS(ON) (mΩ )

1.0E-01 125°C
IS (A)

20 1.0E-02
25°C
15 125°C 1.0E-03
10
1.0E-04
5
1.0E-05
25°C
0 0.0 0.2 0.4 0.6 0.8 1.0 1.2
2 4 6 8 10 VSD (Volts)
VGS (Volts) Figure 6: Body-Diode Characteristics (Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)

Rev 3: March 2011 www.aosmd.com Page 3 of 6

 AON7200

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1800

1600
VDS=15V
8 ID=20A 1400
Ciss

Capacitance (pF)
1200
VGS (Volts)

6
1000

800
4
600
Coss

2 400

200 Crss

0 0
0 3 6 9 12 15 18 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 200

100.0 10µs 10µs 160 TJ(Max)=150°C

RDS(ON) TC=25°C
limited 100µs
Power (W)
ID (Amps)

10.0 120 17
DC 1ms 5
1.0 10ms 2
80
10
TJ(Max)=150°C
0.1 40
TC=25°C

0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe 18
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient
Thermal Resistance

RθJC=4.8°C/W 40
1

0.1 PD

Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 3: March 2011 www.aosmd.com Page 4 of 6

 AON7200

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 30
IAR (A) Peak Avalanche Current

25

Power Dissipation (W)

TA=25°C

20

TA=100°C
15

10
TA=150°C
TA=125°C
5

10 0
0.000001 0.00001 0.0001 0.001 0 25 50 75 100 125 150
Time in avalanche, tA (s) TCASE (°C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note F)
(Note C)

50 80

TA=25°C
40
60
Current rating ID(A)

17
Power (W)

30
40 5
2
20
10
20
10

0 0
0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100
0 1000
TCASE (°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
Thermal Resistance

1 RθJA=75°C/W 40

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Rev 3: March 2011 www.aosmd.com Page 5 of 6

 AON7200

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev 3: March 2011 www.aosmd.com Page 6 of 6