Bai Giang Ky Thuat Dien Tu

TRƯỜNG ĐẠI HỌC BÁCH KHOA
KHOA CƠ KHÍ
BỘ MÔN CƠ ĐIỆN TỬ
KỸ THUẬT ĐIỆN TỬ
(Cho sinh viên ngành Cơ điện tử)
Firma convenzione
Năm học: 2022 - 2023
Politecnico di Milano e Veneranda Fabbrica
del Duomo di Milano
Aula Magna – Rettorato
MercoledìTS. Đặng Phước
27 maggio 2015 Vinh
Email: dpvinh@dut.udn.vn
2
Content – 30 hours
Chapter 1: Introduction
Chapter 2: Diode & Application
Chapter 3: BJT & Application
Chapter 4: OPAMP & Application
Chapter 5: Fundamental of Digital Electronics
Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

3
References
1. Slides Kỹ thuật Điện Tử
2. Slide “Kỹ thuật điện tử”, Huỳnh Việt Thắng, DUT
3. Đỗ Xuân Thụ, “Kỹ thuật Điện Tử”, NXB Giáo dục

Việt Nam, 2011
4. Trần Quang Vinh, “Nguyên lý kỹ thuật điện tử”,

NXB Giáo dục, 2009.
5. Internet

4
Evaluation
▪ 3 elements: Process + Mid-term + Final exam
▪ Weight:
✓ Process: Diligence 10% + Exercises 10%
• 01 absence→ -1 of diligence
✓ Mid-term exam: 20%
✓ Final exam: 60%
▪ Exam: written exam, materials are allowed (60 min)
✓ “Liêm chính học thuật”

5
Liêm chính học thuật
▪ Đình chỉ học tập 6 tháng: mang phương tiện kỹ thuật mang
tin, truyền - nhận tin (như điện thoại, máy ảnh, đồng hồ thông
minh,...) vào phòng thi
▪ Đình chỉ học tập 12 tháng: đi thi hộ hoặc nhờ người khác thi
hộ, làm bài hộ đối với trường hợp vi phạm lần thứ nhất; người
học sử dụng phương tiện kỹ thuật mang tin, truyền - nhận tin
trong thời gian thi.
▪ Buộc thôi học: đã bị kỷ luật với hình thức “Đình chỉ học tập 6
tháng” hoặc “Đình chỉ học tập 12 tháng” và sau đó phạm lỗi có
mức độ “Đình chỉ học tập 6 tháng” hoặc “Đình chỉ học tập 12
tháng”; sử dụng giấy tờ giả mạo và nhờ thi hộ; tổ chức thi hộ; tổ
chức làm giả các giấy tờ liên quan đến kỳ thi.
6
Role of subject
▪ Provide basic knowledge for:
✓ Digital Technique
✓ Microcontroller + Practice
PBL3
✓ Industrial Sensor
✓ Workshop Practice 2
✓ Applied Electronics
✓ Mechatronics System + PBL4
✓ Final Project
7
PBL3

8
PBL3

9
PBL4 & Final Project

10
PBL4 & Final Project

11
Study Plan
Week 1: Chapter 1
Week 2: Chapter 1 + Chapter 2
Week 3: Chapter 2
Week 5: Chapter 3

12
Study Plan
Week 6: Mid-term Exam
Week 8: Chapter 4
Week 9: Chapter 5
Week 10: Chapter 5

13
Software

14
Proteus

15
Altium Designer

16
Altium Designer – 3D

Chapter 1
Introduction
Firma convenzione
del Duomo di Milano
Mercoledì 27 maggio 2015
18
Content
1. History
2. Popular electronic devices
✓ Passive devices
✓ Active devices
✓ Opto-Electronic devices
3. Voltage, current and fundamental laws
✓ Voltage and Current
✓ Voltage source and Current source
✓ Ohm law
✓ Kirchoff voltage law (KVL)
Dr. Dang
✓ Phuoc Vinh current
Kirchoff law (KCL)
Faculty of Mechanical Engineering
19
Symbols

20
Symbols
Power supply Ground/Masse

21
Analog vs. Digital
▪ Analog (Điện tử tương tự )
▪ Digital (Điện tử số)
✓ 0V - 0.8V → “0” / Low
✓ 2.7V - 5V → “1” / High

22

23
Analog vs. Digital

24
Analog vs. Digital

25
Datasheet

26
Datasheet

History
Firma convenzione
del Duomo di Milano
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History
▪ Thomas Alva Edison
(11/1847 - 10/1931) was
an American inventor and
businessman, who has been
described as America's
greatest inventor
▪ Edison patented 1,093 of

his inventions

29
History
▪ In 1876, he established his
first laboratory facility in
Menlo Park, New Jersey.
▪ In 1878, Edison began
working on a system of
electrical illumination.
▪ In 12/1879, Thomas Edison's
first successful light bulb
model, used in public
demonstration at Menlo Park

30
History - Transistor
In 1948, the point
contact transistor was
independently invented
by German physicists
Herbert Mataré and
Heinrich Welker while
working at the
Compagnie des Freins et
Signaux, in Paris.

31
History – BJT

32
History – FET
The most widely used transistor is the MOSFET (metal–
oxide–silicon field-effect transistor), also known as the
MOS transistor, which was invented by Mohamed
Atalla and Dawon Kahng at Bell Labs in 1959.

33

34
History – IC
▪ 1960: First Planar Integrated Circuit was fabricated
▪ An integrated circuit or monolithic integrated
circuit (also referred to as an IC, a chip, or a
microchip) is a set of electronic circuits on one
small flat piece (or "chip“) of semiconductor
material that is normally silicon

Popular Electronic
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Devices
del Duomo di Milano
36
Classification
1. Passive device
2. Active device
3. Opto-Electronic devices

37

38
Passive Device
A passive element is an electrical component that does
not generate power, but instead dissipates, stores,
and/or releases it, includes:
▪ Resistor
▪ Capacitor
▪ Inductor
▪ Relay
▪ …
39
Resistor
▪ Resistor: is a passive two-terminal electrical
component that implements electrical resistance as a
circuit element
▪ Resistivity is a fundamental property of a material that
measures how strongly it resists electric current.
▪ A low resistivity indicates a material that readily

allows electric current and vice versa.
▪ The SI unit of electrical resistivity is the ohm-meter
(Ω.m).
40
Electrical Resistivity

41
Electrical Resistivity

42
Resistor
SI unit: Ohm ().
– 1k = 103 .
– 1M = 106 .
R VR VR
R VR VR
Resistor Variable Resistor

43
Resistor

44
Power Resistor

45
Variable Resistor

46
Potentiometers
Potentiometers are used to vary the resistance in a
circuit by turning a rotary knob

47
Measure R?

48
Resistor Color Codes

49
Resistor Color Codes

50
Surface-mount device (SMD)

51
Linh kiện dán (SMD)

52

53

54
Surface-mount device

55
Bar Resistor

56
Bar Resistor

57
Capacitor
▪ A capacitor is a device
that stores electrical
energy in an electric
field.
▪ It is passive electronic
component with
two terminals.
▪ Capacitance: Fara (F)
– 1F = 10-6 F.
– 1nF = 10-9 F.
– 1pF = 10-12 F.

58
Capacitor
• A capacitor consists of two conductors separated by a
non-conductive region.
• The non-conductive region can either be a vacuum or an
electrical insulator material known as a dielectric.
• In the long-time limit, after the charging/discharging
current has saturated the capacitor, no current would
come into (or get out of) either side of the capacitor →
the long-time equivalence of capacitor is an open circuit.
• In the short-time limit, if the capacitor starts with a
certain voltage V, since the voltage drop on the capacitor
is known at this instant, we can replace it with an ideal
voltage source of voltage V. Specifically, if V=0 (capacitor
is uncharged), the short-time equivalence of a capacitor is
a short circuit.

59
Application
– Filter: smooth the output of power supplies
– High frequency noise filter: capacitor can be consider as

short circuit at high frequency → use for high frequency filter.
– Amplifier stage: allowing AC and blocking DC → block DC

signal in the amplifier stages.
– Frequency filter: combine with other passive devices such

as resistor or inductor to become the certain frequency filter
circuits.

60
DC Power Supply

61
DC Power Supply

62
DC Power Supply

63
Classification

64
Ceramic Capacitor

65
Electrolytic Capacitor

66

67

68
Capacitor Symbols

69
Variable Capacitor

70
Exercises
1. How to test a capacitor?
2. What are functions of capacitor?
3. The differences between ceramic and

Electrolytic capacitor?

71
Inductor
▪ An inductor, also called a coil, choke, or reactor, is a passive two-
terminal electrical component that stores energy in a magnetic
field when electric current flows through it.
▪ An inductor typically consists of an insulated wire wound into a coil.
▪ Many inductors have a magnetic core made of iron or ferrite inside the coil.
▪ When the current flowing through the coil changes, the time-varying
magnetic field induces an electromotive force (e.m.f.) (voltage) in the
conductor, described by Faraday's law of induction.
▪ According to Lenz's law: inductors oppose any changes in current through
them.
▪ They are used to block high frequency AC while allowing DC to pass. They
are also used in electronic filters to separate signals of different frequencies
▪ SI Unit: Henry (H) 1mH = 10-3H.

72
Inductor
An inductor is characterized by its inductance, which is the
ratio of the voltage to the rate of change of current.
𝑍𝐿 = 2.𝜋.f.L

73
Cuộn cảm

74

75
Classification

Classification
76
Variable core
Air core
Iron core
Ferrite core
77
Exercises
1. Characteristics, functions and applications of
4 kinds of inductors?

78
Transformer
A transformer is a device that transfers electric energy from one
alternating-current circuit to one or more other circuits, either
increasing (stepping up) or reducing (stepping down) the
voltage.

79
Transformer

80
Transformer

81
Transformer

82
Biến áp

83
DC Power Supply

84
Bộ nguồn DC

85
Transformer

86
Relay
▪ A relay is an electrically operated switch
▪ Consists of a coil of wire wrapped around a soft iron core (a
solenoid), an iron yoke which provides a low reluctance path
for magnetic flux, a movable iron armature, and one or more
sets of contacts2 status: ON and OFF
▪ Widely application in domestic and industrial devices

87
Construction

88
Cấu tạo

89
Cấu tạo

90
Cấu tạo

91
Thermal Relay
▪ The basic working principle of thermal
relay is that, when a bimetallic strip is
heated up by a heating coil carrying over
current of the system, it bends and makes
normally open contacts.
▪ The bimetallic strips are made of the alloy
of nickel and steel.
▪ When the fault occurs on the system, the
bimetallic spring is heated and getting
bent.
▪ The contact of the relay energizes the trip
circuit because of which the contacts of the
circuit breaker close. Thus, the system
remains safe.
▪ This relay has low overloading
capability. It is designed to operate under
6 ~ 7 times more than the fullFaculty
Dr. Dang Phuoc Vinh
load of Mechanical Engineering
current.
92
Thermal Relay

93
Thermal Relay

94
Applications

95
Active Devices
▪ An active device is any type of circuit component with the ability
to electrically control electric charge flow (electricity controlling
electricity) such as diodes, transistors, SCRs, TRIACs,…
▪ In order for a circuit to be properly called electronic, it must
contain at least one active device.

96
Diode
A diode is a type of two-terminal electronic component
with nonlinear resistance and conductance (i.e., a
nonlinear current–voltage characteristic), distinguishing
it from components such as two-terminal linear resistors
which obey Ohm's law

97
Diode – Function
▪ Allowing an electric current to pass in one direction
(called the diode's forward direction)
▪ Blocking current in the opposite direction (the reverse
direction).

98
Diode Bridge
A diode bridge is an arrangement of four (or more) diodes in a
bridge circuit configuration that provides the same polarity of
output for either polarity of input. When used in its most common
application, for conversion of an Alternating Current (AC) input
into Direct Current a (DC) output, it is known as a bridge rectifier

99
Diode Bridge

100
Classification
▪ Rectifier Diode (Diode chỉnh lưu)
▪ Zener Diode
▪ Diode varicap or varactor (Diode biến dung)
▪ Diode Tunnel (Diode hầm)

101
Transistor
▪ BJT (Bipolar Junction Transistor)
▪ Three-terminal electronic device constructed of
doped semiconductor material.
▪ 2 types:
✓ NPN
✓ PNP NPN PNP
▪ BJT is an important device in the electronic circuits.
✓ Switching
✓ Amplifying

102

103
BJT

104
Opto-Electronic Devices
▪ Light Dependent Resistor
▪ Photo Diode
▪ Photo Transistor

105
Light Dependent Resistor
Light Dependent Resistor (LDR): is a passive component
that decreases resistance with respect to receiving luminosity
(light) on the component's sensitive surface. The resistance of
a photo-resistor decreases with increase in incident intensity

106
Photo Diode
▪ A semiconductor diode
▪ Converts light into an electrical current
▪ Operate at reverse biased.
▪ Traditional solar cell used to generate
electric solar power is a large area
photodiode

107
Photo Tranzito
▪ The Phototransistors are manufactured in the
similar way by which normal transistor is
manufactured
▪ Only difference is the area of the base and
collector region in case of phototransistors is quite
large as compared to the normal transistor. This is
because the more the light falls on the
phototransistor the more current it will generate

108
Light Emitting Devices
▪ LED: Light Emitting Diode
▪ 7-segment Display (LED 7 đoạn)
COM
G F A B
E D C Dp
COM

109
LED
▪ In 1962: Low-Density red LED
▪ As diode is forward biased → electron combines
hole → releases energy in the form of a photon
▪ Note: The maximum current for the standard LED is
about 10-20 mA

110
LED

111
Application
▪ In the domestic and industrial field
▪ High-Density LED (LED siêu sáng)
✓ Red & Yellow: 1.9V – 2.1V
✓ Blue: 3.0V – 3.4V
✓ White: 3.4V – 4.0V

112
Flexible LED Strip Lights

113
7-segment Display
2 types: Common Anode & Cathode
COM CA: Common Anode
G F A B Anode chung
A B C D E F G Dp
A B C D E F G Dp
E D C Dp
COM
CC: Common Cathode
Cathode chung
114
4-Digit Display

115

116
Digital Clock

117
4 x 14 Affichages LED

118
LCD
Liquid-crystal display (LCD) is a flat-panel display or
other electronically modulated optical device that uses the
light-modulating properties of liquid crystals

119
LCD

Voltage, Current &
Basic Laws
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del Duomo di Milano
121
Voltage
▪ Voltage, electric potential difference is the difference
in electric potential between two points.
▪ A voltmeter can be used to measure the voltage (or
potential difference) between two points in a system.
▪ Often a common reference potential such as
the ground of the system is used as one of the points.
▪ SI unit: Volt (V).

122
Current
▪ Electric current is flow of electrons in a conductor.
▪ 2 different kinds of charge:
– Hole: Positive charge
– Electron: Negative charge
▪ Current flow is reverse with electron flow
▪ SI Unit: Ampere (A).

123
Current & Voltage Source
Current source: delivers or absorbs an electric current which is
independent of the voltage across it
Voltage source: is a two-terminal device which can maintain a
fixed voltage and is independent of the load resistance or the
output current

124
Ohm’s Law
▪ A well known law: V = IR
▪ Linearity between voltage and
current.
▪ He was considered crazy,
because he assumed that the
current was the same in different
elements connected in series.
▪ He lost his professor position.
Georg Simon Ohm
(1789 – 1854)
125
Ohm’s Law

126
Ohm’s Law
What is now known as
Ohm's law appears in the
famous book Die galvanische
Kette, mathematisch
bearbeitet (1827) in which
he gave his complete theory
of electricity

127
Ohm’s Law in book

128
Kirchhoff Law
Kirchhoff’s Voltage Law (KVL)
– Sum of the voltage differences around any
closed loop in a circuit must be zero.
– V=0.
Gustav Kirchhoff
(1824 – 1887)

129
Kirchhoff Law
Kirchhoff’s Current Law (KCL): current flowing into a
node (or a junction) must be equal to the current flowing
out of it.

130
Kirchhoff Law
What is the magnitude of the electric potential difference across
resistor R2?
A: 8V B: 12V C: 3V D: 6V

131
Kirchhoff Law

the END !
Firma convenzione
del Duomo di Milano
KHOA CƠ KHÍ
Firma convenzione
Năm học: 2022 - 2023
del Duomo di Milano
27 maggio 2015 Vinh
2
Content

Chapter 2
Diode
Applications
Firma convenzione
del Duomo di Milano
4
Content
▪ Semiconductor
▪ Diode
✓ Construction
✓ Characteristics & Parameters
✓ DC Power Supply

Semiconductor
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del Duomo di Milano
6
Semiconductor
Based on the resistivity , we have 3 kinds of material:
– Conductor
– Semiconductor
– Insulator
Conductor characteristic of some materials are dependent on
environment such as temperature, humidity, pressure…
Conductor Semiconductor Insulator

Điện trở suất
10-610-4 10-4104 1051022
 (cm)
T0    
7
R vs. T

R vs. T 8

9
Electrical Charge
▪ Electric current is flow of electrons in a conductor.
▪ 2 different kinds of charge:

– Hole: Positive charge
– Electron: Negative charge

10
Energy Band
▪ Valence Band: the band of electron orbitals that electrons can
jump out of, moving into the conduction band when excited.
▪ Conduction Band: the band of electron orbitals that electrons
can jump up into from the valence band when excited.
▪ Band gap: the minimum energy required to excite an electron
that is stuck in its bound state into a free state where it can
participate in conduction.

11
Energy Band
Insulator Semiconductor Conductor

12
Electric current flow
▪ In order to generate an electric current → need 2 conditions
✓ Generate free charges thanks to energy supply
✓ These charges move in a certain flow
✓ Current flow is reverse with electron flow

13
Intrinsic Semiconductor
▪ 2 typical intrinsic (pure) semiconductor
– Ge: Germanium small energy is needed in order
– Si: Silicium to break the covalent bond
▪ Belong to the IV group of the Periodic Table.
▪ Consists of 4 electrons in the valence shell
▪ 4 covalent bonds are formed between the electrons of

the silicon atom.

14
Intrinsic Semiconductor
n: number of electron
n=p
p: number of hole
• When the temperature of the
crystal is increased → the
electrons in the covalent bond
gain kinetic energy → breaking
the covalent bond → free.
• Thus, the movement of free
electrons generates current.
• The rise in temperature
somewhat increases the
number for free electrons for
conduction.
15
Doped Semiconductor
N type: major carrier is electron 1010 − 1018
P type: major carrier is hole atom/ 𝑐𝑚3

16
N-type Semiconductor
▪ Adding the group V elements or pentavalent impurity
to a pure semiconductor, such as Phosphor.
▪ These are termed as donor impurity
▪ A pentavalent impurity holds 5 electrons in its valence

shell
▪ n>p

17
N-type Semiconductor

18
P-type Semiconductor
▪ Introducing group III elements or trivalent impurity
into the pure semiconductor, such as Boron (Bo).
▪ These are termed as acceptor impurity
▪ A trivalent impurity has only 3 electrons in the valence

shell
▪ p>n

19
P-type Semiconductor

20
Doped Semiconductor
Pha thêm chất thuộc nhóm III trong bảng tuần hoàn Mendeleev vao chất bán
dẫn thuần, ví dụ Bo vào Si.
Nguyên tử tạp chất thiếu 1 e lớp ngoài cùng nên xuất hiện một lỗ trống liên
kết yếu với hạt nhân, dễ dàng bị ion hóa nhờ một năng lượng yếu
p>n

21
Chất bán dẫn tạp

22
Semiconductor

DIODE
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24
Diode
Diode is a crystalline piece of semiconductor material with
a P–N junction connected to two electrical terminals.
Two Electrode
Di ode
P N
Greek
D1
ANODE CATHODE
DIODE

25
Price

26
Application

27
Biasing Mode
▪ Unbiased
▪ Reverse Biased
▪ Forward Biased

28
Unbiased
▪ At the across of P-N
junction, electrons of N-
type combine with the
hole of P-type →
Depletion Zone (100 µm).
▪ A voltage barrier is
generated.
– Ge: U = V ~ 0.3V
– Si: U = V ~ 0.6V

29
Reverse Biased
▪ Free holes of that region are attracted
towards the negative terminal of the E
source
▪ Free electrons of that region are
attracted towards the positive terminal
of the source
▪ Depletion layer is larger.
▪ Ideally: no current flows in diode when
reverse biased.
▪ Tiny current flow from N-type region
to P-type region due to minority
carriers that are thermally generated
electrons in P-type semiconductor and
holes in an N-type semiconductor.

30
Forward Biased
▪ Free holes of that region are E
attracted towards the positive
terminal of the source
▪ Free electrons of that region are
attracted towards the negative
terminal of the source
▪ Depletion layer is disappear
▪ Free electrons from the N-type
region can easily drift to the P-type
region
▪ Holes from the P-type region to the
N-type region in the crystal.
▪ Ideally, there will be no obstruction
of flowing current, and the PN
Dr.junction behaves
Dang Phuoc Vinh as the short circuit
31
Operating Principle

32
Classification

33
Current in Diode
The diode equation gives an expression for the current through a
diode as a function of voltage. The Ideal Diode Law, expressed as:
𝑞𝑈ൗ
Id = IS 𝑒 𝑘𝑇 −1
where
• q: absolute value of electron charge (q = 1,6.10−19 C)
• k: Boltzmann's constant (k = 1,38.10-23 J/K)
• T: Kelvin temperature (K).
• U: applied voltage across the terminals of the diode
• IS : "dark saturation current", the diode leakage current
density in the absence of light.

34
Current in Diode
When diode is biased (I , U0):
𝐼 = 𝐼𝑠 𝑒 𝑞𝑈/𝑘𝑇 − 1
Equation of
Set UT = kT/q is the thermal voltage Diode characteristic
At 300 K: UT ~ 25.5 mV.
𝐼 = 𝐼𝑠 𝑒 𝑈/𝑈𝑇 − 1
Dark saturation current :
𝐦 = 𝟎. 𝟎𝟕𝟐 /°𝐂
𝐼𝑠 𝑡2 = 𝐼𝑠 (𝑡1 )𝑒 𝑚(𝑇2−𝑇1) 𝐈𝐬 𝟎 °𝐂 = 𝟏𝐞 − 𝟏𝟐;

Static Characteristic
&
Firma convenzione
del Duomo di Milano
Parameters
▪ Forward biased 36
Static characteristics ▪ U remains constant
when I change
▪ Working range of
𝑞𝑈ൗ
Diode equation Id = IS 𝑒 𝑘𝑇 −1 rectifier
▪ Reverse biased
▪ U remains
constant when
I change
▪ Working range
Dr. Dang Phuoc Vinh of ZenerFaculty
diodeof Mechanical Engineering
Avalanche breakdown? 37
Both breakdown types are used

in Zener diodes with the Zener
effect predominating at lower
voltages and avalanche
breakdown at higher voltages.

38
Datasheet

39
Datasheet

40

41
Working conditions
▪ Diode is forward biased (+ connect to P, - connect to N)
▪ Applied voltage to the diode must be larger than the
threshold voltage: V
✓ Ge: V ~ 0.3 (V)
✓ Si: V ~ 0.6 (V)

42
Freewheel/Flyback diode?
Function?

43
Function?

44
If no diode?

45
If wrong position

46

47
Good Better Best

DC Power
Supply
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del Duomo di Milano
49
Schematic

Rectifier
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del Duomo di Milano
51
Rectifier
▪ Half Wave Rectifier (Bộ chỉnh lưu bán kỳ)
▪ Full Wave Rectifier (Bộ chỉnh lưu toàn kỳ)
▪ Full Wave Bridge Rectifier (Bộ chỉnh lưu cầu)

52
Half Wave Rectifier

53
Half Wave Rectifier

54
Half Wave Rectifier
V0 ?
V0 = 0, vs < VD0
V0 = (vs-VD0)R/(R+rD)
55
Half Wave Rectifier

56
Chỉnh lưu bán kỳ

58
Full Wave Rectifier

59
Full Wave Rectifier
V0 ?

60
Chỉnh lưu toàn kỳ

61
Full Wave Bridge Rectifier
D1
D2
D4
D3

62

63
V0 ?

64
D1
D2
D4
D3

65
Chỉnh lưu toàn kỳ

66
Diode bridge

67
Price

68
Digital Oscilloscope

69
Rectifier Circuit

70
Sơ đồ khối

71
DC Power Supply

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DC Power Supply

Zener Diode
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Diode Zener
Clarence Melvin Zener

(12/1905 – 7/1993)

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Zener Diode
▪ The basic function of Zener diode is to maintain a
specific voltage across its terminals within given limits of
line or load change.
▪ Typically it is used for providing a stable reference
voltage for use in power supplies and other equipment.

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Zener Diode

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Application
Producing Nonstandard
Driving a Relay Output Voltages

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Waveshaping
• Positive half-cycle: 𝐙𝟏 conducts and 𝐙𝟐 breaks down.
Therefore, the output is clipped.
• Negative half-cycle: the action is reversed. 𝐙𝟐 conducts and
𝐙𝟏 breaks down. In this way the output is approximately a
square wave.
• 𝐕𝐎 = 𝐕𝐙 + 𝟎. 𝟕
𝐙𝟏
𝐙𝟐
Voltage Regulator IC
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Voltage Regular IC
1. IC provides fixed voltage
▪ Positive voltage regular – 78XX
▪ Negative voltage regular – 79XX
2. IC provides variable voltage
Voltage regulator IC

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Positive voltage – 78XX
• 78XX Family
• XX is replaced with two
digits, indicating the
output voltage
7805; 7806; 7808; 7809

7812; 7815; 7818; 7824
Input voltage: Ui ≤ 35 V
Ui > Uo + 3

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Input voltage : Ui ≤ 35 V
Ui > Uo + 2 ÷ 3 Out
In
Ground
83
Input voltage:
Ui ≤ 35 V
Ui > Uo + 2 ÷ 3

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Type Imax
78XX 1A
78MXX 500 mA
78LXX 100 mA

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Negative voltage – 79XX
• 79XX Family
• XX is replaced with two
digits, indicating the
output voltage
7905; 7906; 7908

7912; 7915; 7918; 7924
Input voltage : Ui ≤ 35 V
Ui > U o + 3

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Negative voltage – 79XX
Type 𝐈𝐦𝐚𝐱
79XX 1A
79MXX 500 mA
79LXX 100 mA

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78XX vs. 79XX

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Voltage Regulator Circuit

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DC Power Supply

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Variable voltage - LM317
• LM317 is a 3-terminal device
• Ui > Uo + 2 ÷ 3 R2
Uo = 1.25 1 +
• Imax = 1.5 A R1
𝐑𝟐
𝐑𝟏

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DC Supply - LM317

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Variable voltage – LM2596
• LM2596 has 5 pins
• Ui : 3 ÷ 40 V
• Uo : 1.5 ÷ 35 V
• Imax = 3 A

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Variable voltage – LM2596
• LM2596 has 5 pins
• Ui : 3 ÷ 40 V
• Uo : 1.5 ÷ 35 V
• Imax = 3 A

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DC Supply – LM2596

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DC Supply – LM2596s

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DC Supply Power

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Adapter

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DC Power for PLC

the END !
Firma convenzione
del Duomo di Milano
KHOA CƠ KHÍ
Firma convenzione
Năm học: 2022 - 2023
del Duomo di Milano
27 maggio 2015 Vinh
2
Content

Chapter 3
BJT & Application

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Content
1. Introduction and Construction of BJT
2. Classification
3. Pinout
4. Operating Principle
5. Specifications
6. BJT Polarization
7. Amplifier Circuit using BJT
8. Multistage Amplifier
9. BJT Power Amplifier

5
BJT Introduction
▪ Bipolar Junction Transistor (BJT): three-terminal electronic
device constructed of doped semiconductor material
▪ Bipolar: operation involves both electrons and holes.
▪ Application: amplifying or switching applications.
▪ Charge flow in a BJT is due to bidirectional diffusion of charge
carriers across a junction between two regions of different
charge concentrations.
▪ Most of the BJT collector current is due to the flow of charges
injected from a high-concentration emitter into the base where
they are minority carriers that diffuse toward the collector, and
so BJTs are classified as minority-carrier devices.

6
BJT Construction
▪ BJT: Bipolar Junction Transistor
▪ 2 junctions between two semiconductor: N-type & P-type
▪ 3 terminals: E-Emitter, B-Base, C:-Collector

7
BJT Construction
▪ BJT: Bipolar Junction Transistor
▪ 2 junctions between two semiconductor: N-type & P-type
▪ 3 terminals: E-Emitter, B-Base, C:-Collector

8
BJT Aplication

9
BJT Aplication

10
BJT Aplication

Classification
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2 types: NPN & PNP
NPN PNP

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2 types: NPN & PNP

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2 types: NPN & PNP

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NPN Transitor

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PNP Transitor

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PNP Transitor Connection

18
C945 Transitor Pinout

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BJT Pinout

Operating
Principle
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Operating Principle

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Operating Principle

23
Nguyên lý hoạt động

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Current & Voltage
NPN PNP
IE IC IE IC
- UCE + + UEC -
E E C
C
- - + +
VBE VBC VEB IB VCB
IB
- -
+ +
B B
IE = IB + IC IE = IB + IC
UCE = -VBC + VBE UEC = VEB - VCB
25
Specifications
• IE = IB + IC
• Ratio of the collector current to the 𝐼
 = 𝐼𝐶 → IC = IE
emitter current  𝐸
• Current gain: 
𝐼𝐶 IC = IB
𝛽= (𝛽  100 with low-power BJT)
𝐼𝐵
IE IC
 = IC / (IE – IC) =  / (1- ) E
- UCE +
C
 =  / ( + 1) - -
IB = (1 - )IE VBE IB VBC
+ +
IE = (1 + 𝛽)IB B
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Specifications

27
Example
IE ? IE = IB + IC = 0.05 mA + 1 mA = 1.05 mA
1 mA
50 A
β? β = IC / IB = 1 mA / 0.05 mA = 20
 = IC / IE = 1 mA / 1.05 mA = 0.95238
?
 = β / (β + 1) = 20/21 = 0.95238

Operating
Regions
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Operating Regions
• Supply DC current to three terminals of BJT
• Determine the static operating regions of BJT
✓ Active region (Amplifier region – Linear region)
✓ Saturation region
✓ Cut-off region
Active Region Saturation Region

✓ B-E is forward biased. ✓ B-E is forward biased.
✓ B-C is reverse biased. ✓ B-C is forward biased.
• Because the B-E junction can be considered as a diode →

in order to active a BJT BJT Ge : V ~ 0.3V
VBE  V BJT Si : V ~ 0.6V

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Operating Regions

31
DC Load Line
▪ The DC Load Line of BJT Biasing Circuit is a straight line
drawn on the transistor output characteristics.
▪ For a common-emitter circuit, the load line is a graph of

collector current (IC) versus collector-emitter voltage
(VCE), for a given value of collector resistance (RC) and a
given supply voltage (VCC).
▪ The load line shows all corresponding levels of IC and

VCE that can exist in a particular circuit.

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DC Load Line
DC Load line
IC
mA
IB
µA Q V UCE RC
RB
VB VCC
Remain IB , change VCC , we have: 𝐼𝐶 = 𝑓 𝑈𝐶𝐸

33
Output Characteristics
• DC Load Line is determined by
IB=max
using the Ohm law.
Ic(mA) Đường
• Q point or the operating point tải tĩnh
of a device is the steady-state VCC/RC
Điểm làm
DC voltage or current at a K việc tĩnh IBQ
specified terminal of an active
ICQ
device such as a diode or Q(UCEQ, ICQ)
transistor with no input signal
applied. IB=0
• Q point is the intersection of L UCE(V)
DC load line and the IB curve UCEQ VCC
when no input signal.
• Q is located in the center of the
K-L range → BJT is more stable.

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𝑰𝑪 Saturation region B-E & B-C is forward biased

(𝒎𝑨)
𝑽𝑪𝑬 = 𝟎 BJT “fully ON” VBE(sat) >= 0,8V & VCE(sat) = 0,2V
𝑽𝑪𝑪 𝑰𝑩 = 𝟏𝟐𝟎 𝝁𝑨
𝑰𝑪 =
𝑹𝑪
𝑰𝑩 = 𝟏𝟎𝟎 𝝁𝑨
B-E is forward biased
B-C is reverse biased (Vc>Vb>Ve)
DC Load line 𝑰𝑩 = 𝟖𝟎 𝝁𝑨
Active (Linear) region
𝑰𝑩 = 𝟔𝟎 𝝁𝑨
Q-Point
𝑰𝑩 = 𝟒𝟎 𝝁𝑨 Cut-off region
BJT “fully OFF”
𝑰𝑩 = 𝟐𝟎 𝝁𝑨
𝑰𝑩 = 𝟎 𝝁𝑨
𝑽𝑪𝑬 (𝑽)
Dr. Dang Phuoc Vinh𝑽𝑪𝑬 (𝒔𝒂𝒕) 𝑰 =𝟎

𝑪
𝑽𝑪𝑬 = 𝑽𝑪𝑪
Operating Regions
35

36
BJT C1815

37
Example 1
BJT in the circuit as shown in figure is Vc
2SC1815 type with following specifications:
VB = 3 V ; RB = 10 kΩ
VC = 5 V ; RC = 1 kΩ
VBE = 1 V ; VCE Sat = 0.1 V
β(hFE) = 100 𝐕𝐁
• Determine IB ; IC ; VCE
• Power consumption? E

Example 1
38
𝐕𝐂 = 5V 𝑉𝐵 = 𝐼𝐵 𝑅𝐵 + 𝑉𝐵𝐸
𝑉𝐶 = 𝐼𝐶 𝑅𝐶 + 𝑉𝐶𝐸
RC = 1 kΩ
𝑉𝐵 − 𝑉𝐵𝐸 3 − 1
𝐼𝐵 = = = 0.2 mA
𝑅𝐵 10 kΩ
𝐕𝐁 = 3V
Suppose that BJT works in Active Region

RB = 10 kΩ 𝐼𝐶 = 𝛽𝐼𝐵
𝐼𝐶 = 𝛽𝐼𝐵 = 100 × 0.2 = 20 mA
𝑉𝐶𝐸 = 𝑉𝐶 − 𝐼𝐶 𝑅𝐶 = 5 − 20 mA × 1kΩ = −15 V
E Re-check: 𝑉𝐶𝐸 < 𝑉𝐶𝐸(𝑆𝐴𝑇) = 0.1 𝑉
Wrong Assumption

Example 1
39
𝐕𝐂 = 5V 𝑉𝐵 = 𝐼𝐵 𝑅𝐵 + 𝑉𝐵𝐸
RC = 1 kΩ Suppose that BJT works in the
Saturation Region
𝑉𝐶𝐸 = 𝑉𝐶𝐸(𝑆𝐴𝑇) = 0.1 𝑉
𝐕𝐁 = 3V
𝑉𝐵 − 𝑉𝐵𝐸 3 − 1
𝐼𝐵 = = = 0.2 mA
𝑅𝐵 10 kΩ
RB = 10 kΩ 𝑉𝐶 − 𝑉𝐶𝐸(𝑠𝑎𝑡) 5 − 0.1
𝐼𝐶(𝑆𝐴𝑇) = = = 4.9 mA
𝑅𝐶 1 kΩ
𝐼𝐶(𝑠𝑎𝑡) 4.9
E Re-check: 𝐼𝐵(𝑠𝑎𝑡) = = = 0.049 mA
𝛽 100
𝐼𝐵 > 𝐼𝐵(𝑠𝑎𝑡) Suitable Assumption

Example 1
40
Vc 𝐼𝐵 = 0.2 𝑚𝐴 ; 𝐼𝐶 = 4.9 𝑚𝐴
𝑃𝐵𝐽𝑇 = 𝐼𝐵 𝑉𝐵𝐸 + 𝐼𝐶 𝑉𝐶𝐸
= 0.2 × 1 + 4.9 × 0.1 = 0.69 mW
4.9 mA
Power consumption on load:
𝑃𝑅𝐶 = 𝑅𝐶 𝐼𝐶2
= 1kΩ × 4.9mA 2 = 24.01 mW
Power consumption on system:
𝐕𝐁 𝑃 = 𝑃𝑅𝐵 +𝑃𝑅𝐶 +𝑃𝐵𝐽𝑇
= 𝑅𝐵 𝐼𝐵2 + 𝑅𝐶 𝐼𝐶2 + 𝐼𝐵 𝑉𝐵𝐸 + 𝐼𝐶 𝑉𝐶𝐸
0.2 mA
E = 25.1 mW
𝑃𝑅𝐶 24.01
Efficiency: 𝜂 = = = 95.00%
𝑃 25.1
41
Example 2
BJT in the circuit as shown in figure is Vc
2SC1815 type with following specifications:
VB = 3 V ; RB = 100 kΩ
VC = 5 V ; RC = 1 kΩ
VBE = 1 V ; VCE Sat = 0.1 V
β(hFE) = 100 𝐕𝐁
• Determine IB ; IC ; VCE
• Power consumption? E

Example 2
42
Vc Voltage equation in the 𝑅𝐵 part

𝑉𝐵 = 𝐼𝐵 𝑅𝐵 + 𝑉𝐵𝐸
𝑉𝐵 − 𝑉𝐵𝐸 3−1
𝐼𝐵 = = = 0.02 mA
𝑅𝐵 100 kΩ
Suppose that BJT works in Active Region
𝐼𝐶 = 𝛽𝐼𝐵 = 100 × 0.02 = 2 mA
Voltage equation in the 𝑅𝐶 part
𝐕𝐁
𝑉𝐶𝐸 = 𝑉𝐶 − 𝐼𝐶 𝑅𝐶 = 5 − 2 mA × 1kΩ = 3 V
E Re-check: 𝑉𝐶𝐸 > 𝑉𝐶𝐸(𝑆𝐴𝑇) = 0.1 𝑉

Suitable Assumption

Example 2
43
Vc 𝐼𝐵 = 0.02 𝑚𝐴 ; 𝐼𝐶 = 2 𝑚𝐴
𝑃𝐵𝐽𝑇 = 𝐼𝐵 𝑉𝐵𝐸 + 𝐼𝐶 𝑉𝐶𝐸
= 0.02 × 1 + 2 × 3 = 6.02 mW
2 mA
Power consumption on load:
𝑃𝑅𝐶 = 𝑅𝐶 𝐼𝐶2 = 1kΩ × 2mA 2 = 4 mW
Power consumption on circuit:

𝐕𝐁 𝑃 = 𝑃𝑅𝐵 +𝑃𝑅𝐶 +𝑃𝐵𝐽𝑇
= 𝑅𝐵 𝐼𝐵2 + 𝑅𝐶 𝐼𝐶2 + 𝐼𝐵 𝑉𝐵𝐸 + 𝐼𝐶 𝑉𝐶𝐸
0.02 mA = 10.024 mW
E
𝑃𝑅𝐶 4
Efficiency: 𝜂 = = = 39.9%
𝑃 10.024
44
Active and Saturation Region
Active region: IC =  IB
Saturation region: IC =  IB is not valid

𝑉𝐵 − 𝑈𝐵𝐸
IB =
𝑅𝐵
𝑉𝐶𝐶 − 𝑈𝐶𝐸(𝑠𝑎𝑡)
𝐼𝐶(𝑠𝑎𝑡) =
𝑅𝐶
𝐼𝐶(𝑠𝑎𝑡)
𝐼𝐵(𝑠𝑎𝑡) =
𝛽
IB < 𝐼𝐵(𝑠𝑎𝑡) : Active
IB ≥ 𝐼𝐵(𝑠𝑎𝑡) : Saturation In practice: IB = kIB(sat) ; k = 2-5

45
Cut-off Characteristics

46
Saturation Characteristics

47
Basic NPN Switching Circuit
• Common Emitter circuit
• Transistor can be turned either
fully “OFF” (cut-off) or fully “ON”
(saturated).
• An ideal transistor switch infinite
circuit resistance between the
Collector and Emitter when turned
“fully-OFF” → zero current flowing
through it.
• Zero resistance between the
Collector and Emitter when turned
“fully-ON”, resulting in maximum
current flow.

BJT Biasing
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BJT Biasing
1. Constant current bias
2. Feedback voltage bias
3. Automatic bias (voltage divider
circuit)

53
Constant current bias
Apply KVL for the “1” loop:
• IBRB + UBE = VB
→ IB: constant
Apply KVL for the “2” loop :

• UCE = VCC − ICRC
KVL: Kirchhoff's Voltage Law

KCL: Kirchhoff’s Current Law
54
• IBRB + UBE = VCC
→ IB: constant

• UCE = VCC − ICRC
KVL: Kirchhoff's Voltage Law

KCL: Kirchhoff’s Current Law
55
Determine the Q point IB = max
Đường tải tĩnh
▪ DC load line Ic(mA)
VCC/RC
Điểm làm
K
• VCC = ICRC + UCE việc tĩnh IBQ
• Straight line. ICQ

Q(UCEQ, ICQ)
V
• UCE = 0 → IC = RCC
C IB = 0
• IC = 0 → UCE = VCC L UCE(V)
UCEQ VCC
▪ Q point

56
Thermal Stability
• As temperature increases →
IC increases → A move to A’.
• Stronger BJT works → more
temperature increases.
• If no heat sink radiator (tản
nhiệt), A’ → A’’...
→ Signal is distorted.
→ BJT can be damaged.

57
Example
Vc
VB = 5 V ; RB = 107.5 kΩ.
VC = 10 V ; RC = 1 kΩ.
Vγ = 0.6 V ; β = 100.
• Calculate IB ; IC ; UCE 𝐕𝐁
• Determine Q point?
E

58
Calculation iB ; iC ; UCE
Vc
BJT works in the active region → UBE = V
▪ Apply KVL for the “B-E” loop

𝑉𝐵 − 𝑈𝐵𝐸
• IB = ~ 41 A.
𝑅𝐵
• IC =  IB = 4.1 mA
𝐕𝐁
▪ Apply KVL for the “C-E” loop

• UCE = VC – ICRC E
= 10 – 4.1(mA)×1(k Ω) = 5.9 V

59
DC Q-Point
Ic (mA)
– DC load line
10
• VC = ICRC + UCE
• Straight line Q
𝑉𝐶𝐶 (5.9V - 4.1mA)
• UCE = 0 → 𝐼𝐶 = = 10 mA
𝑅𝐶 4.1 41 A
• IC = 0 → UCE = VCC = 10 V
UCE (V)
5.9 10
– Q Point
• Q locates in the middle of the DC load line → BJT works stable.

60
BJT Biasing
3. Automatic bias (voltage
divider circuit)

61
Polarization using feedback voltage
Apply KVL for the “I” loop
UCE − UBE
• IB =
RB
Apply KCL at the “C” point
• I = IB + IC = IE
Apply KVL for the “II” loop
• VCC = IRC + UCE
𝑉𝐶𝐶 − 𝑈𝐵𝐸
𝐼𝐵 =
𝑅𝐵 + 𝑅𝐶 (1 + 𝛽)

62
Feedback voltage bias
Determine the Q point
– DC load line
𝑉𝐶𝐶
IC 𝛼
• VCC = IRC + UCE = R C + UCE 𝑅𝐶
α
• Straight line
VCC
• UCE = 0 → IC = α
RC
• IC = 0 → UCE = VCC
▪ Q point

63
Thermal Stability
• As temperature increases 𝑉𝐶𝐶
▪ ICA → ICA’ 𝛼
𝑅𝐶
▪ A → A’
• UCE decreases → UCEA’
𝑈𝐶𝐸 − 𝑈𝐵𝐸
• 𝐼𝐵 =
𝑅𝐵
▪ IB decreases → IC decreases
• A’ → A
• Circuit has thermal stability

64
▪ Negative voltage feedback
▪ Circuit has thermal stability; but the
current gain decreases
▪ Solutions:
• Separate RB into 2 resistors which
connect with C capacitor.
• C: short-circuit capacitor for AC signal.
• The feedback AC signal is shorted to the
ground through C capacitor → cannot
back to the Base terminal.

65
BJT Biasing
3. Automatic bias
(voltage divider circuit)

66
Thevenin Theorem
It is possible to simplify any linear circuit, no matter how complex, to an
equivalent circuit with just a single voltage source and series resistance
connected to a load
Một mạch tuyến tính hay phức tạp có thể thay thế dòng và điện áp nguồn
bằng một mạch tương đương có chứa một điện áp độc lập VTH và một điện
trở nối tiếp RTH.

67
Thevenin Theorem
It is possible to simplify any linear circuit, no matter how complex, to an
equivalent circuit with just a single voltage source and series resistance
connected to a load

68
Step #1: e ?

69
Step #2: r ?

70
Results

71
Example

72
Example
VTH = 8 V
RTH = 766.67 Ω

73
Automatic bias
𝑅𝐵2
𝑉𝐵 = 𝑉𝐶𝐶
𝑅𝐵1 + 𝑅𝐵2
𝑅𝐵1 . 𝑅𝐵2
𝑅𝐵 =
𝑅𝐵1 + 𝑅𝐵2

74
Automatic bias
𝑅𝐵2 𝑅𝐵1 . 𝑅𝐵2
𝑉𝐵 = 𝑉𝐶𝐶 𝑅𝐵 =
𝑅𝐵1 + 𝑅𝐵2 𝑅𝐵1 + 𝑅𝐵2
Apply KVL for the “1” loop:

▪ VB – IBRB – UBE – IERE = 0
▪ IE = IB + IC = (1+ )IB
𝑉𝐵 −𝑈𝐵𝐸
𝐼𝐵 =
𝑅𝐵 + 1 + 𝛽 𝑅𝐸

75
Automatic bias
Apply KVL for the “2” loop
▪ VCC = ICRC + UCE + IERE
𝛽𝐼𝐶
𝐼𝐸 =
1+𝛽
We can have:
𝑅𝐸
▪ 𝑉𝐶𝐶 = 𝑅𝐶 + 𝐼𝐶 + 𝑈𝐶𝐸
𝛼
𝛽
where α = 1+𝛽

76
Automatic bias
Determine Q point
▪ DC load line 𝛼𝑉𝐶𝐶
𝑅𝐸 𝛼𝑅𝐶 + 𝑅𝐸
• 𝑉𝐶𝐶 = 𝑅𝐶 + 𝐼𝐶 + 𝑈𝐶𝐸
𝛼
• Straight line.
𝛼𝑉𝐶𝐶
• UCE = 0 → 𝐼𝐶 =
𝛼𝑅𝐶 +𝑅𝐸
• 𝐼𝐶 = 0 → UCE = VCC
▪ Q point

77
Automatic bias
Thermal Stability
𝛼𝑉𝐶𝐶
• As temperature increases 𝛼𝑅𝐶 + 𝑅𝐸
▪ ICA → ICA’ → IE increases

▪ A → A’
• VB = IBRB + VBE + IERE
If IB decreases → IC decreases.
• A’ comes back to A.
• Circuit has thermal stability.

78
Automatic bias
▪ Thermal stability is obtained by the
Emitter current through RE.
▪ RE : thermal stability resistor.
▪ The larger the RE , more stable is the
system.
▪ Most popular.
▪ However, this negative feedback
decreases the current gain.
▪ Solutions:
• CE // RE.
• CE: short-circuit capacitor for AC signal.

Operating Regions
79
IC
Vùng bão
hòa
Vùng
khuếch đại
A
AB
B iB=0
0 Vùng tắt UCE

80
Class A
– BJT works with full-wave input (2 cycles).
– Advantage: Nonlinear distortion ratio is small.
– Disadvantage: Low efficiency  < 50%

81
Class B
– BJT is unbiased, BJT only works with one half-cycle of input.
– Advantage: High efficiency ~78% .
– Disadvantage : Nonlinear distortion ratio is quite large

82
Class AB
▪ Class AB is somewhere between class A and class B: the
transistor spends more than 50% but less than 100% of the
time conducting current.
▪ The output waveform will be further “clipped” than it was with
class B biasing, resulting in an operation where the transistor
spends most of the time in cutoff mode.

Common Aplifier
Configuration
Firma convenzione
del Duomo di Milano
84
Common Aplifier Configuration
E-C B-C C-C
Emitter Common Base Common Collector Common
B: input E: input B: input
C:output C:output E:output
E: common B: common C: common
E C
C E
B ra B ra
vào B ra
vào E vào C

85
E-C Type Circuit
• RB1, RB2: for the BJT biasing. The most common amplifier configuration
for an NPN transistor
• RC: identify amplifier mode.
VCC
• RE: thermal stability.
• Rt: resistor of load. RB1 RC
• en, Rn: value and inside resistor
of supply power. C
Q 2
• C1, C2: input and output C1
capacitor → blocking DC and Rn
RB2 Rt
RE
allowing AC signal.
en CE
• CE: short-circuit capacitor for AC
signal, increase the current gain
of the system.
86
E-C Type Circuit
Equivalent Circuit
iv B iB C
Rn rBE=rp iB it
RC Rt
ur
O
uv
RB
en
rv iE Rr
Rv
RB = R1//R2 E

87
Small Signal Amplifier
• The most common configuration for an NPN
transistor
• Using of the DC load line of an amplifier allows
seeing all the possible operating points of the
transistor from fully “ON” to fully “OFF”
• The aim of this circuit is to amplify all of the
input signal with the minimum amount of
distortion possible to the output signal → the
output signal must be an exact reproduction of
the input signal but only bigger (amplified)
• The best possible position for this Q-point is as
close to the center position of the load line as
reasonably possible, thereby producing a Class
A type amplifier operation, ie. Vce = 1/2Vcc

88
Small Signal Amplifier

89

90
B-C Type Circuit
• RE: for the BJT biasing. +VE -VC
• RC: resistor of C terminal.
RE RC
• Rt: resistor of load.
• en, Rn: value and inside Q
resistor of supply power. C1 C2
Rn
• C1, C2: input and output Rt
capacitor → blocking DC en
and allowing AC signal.

91
B-C Type Circuit
Equivalent Circuit
iE
iv E re O C
iE
Rn it
iB
RC Rt
ur
uv
RE
en
rv Rr
Rv
B
92
C-C Type Circuit
• RB1, RB2: for the BJT biasing. VCC
• RC: resistor of C terminal.
RB1 RC
• RE: resistor of E terminal.
• Rt: resistor of load.
Q
• en, Rn: value and inside C1
Rn
resistor of supply power. RB2 RE
C2
Rt
• C1, C2: input and output en
capacitor → blocking DC and
allowing AC signal.

93
C-C Type Circuit
Equivalent Circuit
iv B iB C
Rn
rBE=rp iB
E
iE
uv
RB RC
en it
ur
rv R Rt
Rv E
Rr
RB = R1//R2
O
Applications
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del Duomo di Milano
95
Application: Amplifier

96

97

98
Application: TDA 7279
TDA7297 15W + 15W

99
Application: TDA 2030

100
Application: TPA3116D2
▪ Chip: TPA3116D2 +
NE5532
▪ Điện áp: 12 - 24VDC
▪ Ngõ vào: jack header 3
pin
▪ Ngõ ra: 2 kênh
▪ Công suất: 80W - 80W
▪ Hiệu suất: > 90%

101
Application: IC

102
Application: IC 741

103
Application: Switch

104
Darlington pair

105
Darlington pair
𝜷𝒕𝒐𝒕𝒂𝒍 = 𝜷𝟏 + 𝜷𝟐 +𝜷𝟏 𝜷𝟐
𝑰𝑪 = 𝜷𝑰𝑩

106
Darlington pair
NPN Pair PNP Pair

107
Application: ULN 2003A

108

109
Sziklai pair

110
Sziklai pair

111
Darlington & Sziklai
Advantages of Sziklai pair
▪ Sziklai pair have lower quiescent current for better linear
operations.
▪ Thermal stability of Sziklai pair is superior to the Darlington pair.
▪ It has faster response time than Darlington pair.
▪ The turn-on voltage of Sziklai pair is equal to a normal transistor,
while Darlington takes twice the input voltage.
Disadvantages of Sziklai pair:

▪ Gain of the Sziklai pair is lesser than the Darlington pair
Darlington Pair Gain: βQ1 × βQ2 + βQ1 + βQ2

Sziklai Pair Gain: βQ1 × βQ2 + βQ1

the END !
Firma convenzione
del Duomo di Milano
KHOA CƠ KHÍ
Firma convenzione
Năm học: 2022 - 2023
del Duomo di Milano
27 maggio 2015 Vinh
2
Content

Chapter 4
OPAMP
& Firma convenzione
del Duomo di Milano
Applications
4
Content
▪ What is an OPAMP?
▪ Applications:
1. Comparator
2. Inverting & Non- Inverting Amplifier
3. Voltage Follower
4. Inverting & Non- Inverting summing Amplifier
5. Differential Amplifier
6. Differentiator Amplifier
7. Integrator Amplifier
8. Instrumentation Amplifier
5
OPAMP
▪ OPAMP (Operational Amplifier)
▪ Amplifier: give an output which has the same features with

input but larger amplitude
▪ Operational Amplifier: perform mathematical operations in

linear, non-linear, and frequency-dependent circuits.
▪ It is a DC-coupled high-gain electronic voltage amplifier with

a differential input and, usually, a single-ended output
▪ OPAMPs are used widely in electronic devices today, including a

vast array of consumer, industrial, and scientific devices

6
OPAMP

7
OPAMP

8
OPAMP
Power supply +15V ▪ Rin : input resistance.
▪ Idea OPAMP: 𝑹𝒊𝒏 = ∞
▪ Vin : voltage of inverting and
i+
Non-inverting non-inverting input.
input
i-
Inverting input
▪ G : Gain of OPAMP.
i(+), i(-) : input ▪ Idea OPAMP: G = ∞
current of OP-AMP at
▪ 𝑅𝑜𝑢𝑡 : output resistance
inverting and non-
inverting input -15V ▪ Idea OPAMP: R out = 0.

9
OPAMP

10
OPAMP

11
OPAMP

12
OPAMP

13
IC 741

14
IC 741

15
LM324

16
Comparator
+𝐕𝐜𝐜
−𝐕𝐜𝐜
17
Inverting amplifier
𝐼𝑖 = 0 𝐼𝑓
𝑈𝑖 = 0
𝐼𝑖𝑛 𝐼𝑖
X
𝑈𝑖
Virtual
Earth

18
Non-inverting Amplifier
X
𝐼1 𝐼2

19
Voltage Follower
𝑅1 = ∞
𝑅2 = 0
𝑉𝑜𝑢𝑡 = 𝑉𝑖𝑛
20
Inverting Summing Amplifier
𝐼1
𝐼2
𝐼𝑓
𝐼𝑛

21
Non-inverting Summing Amplifier
𝐼𝐵
𝐼𝐴
𝐼1
𝐼2
𝐼𝑛

22
Differential Amplifier
𝐼𝑓
𝐼1
𝐼2
𝐼𝑔

23
Differentiator Amplifier
𝐼𝑅
𝐼𝐶
X

24
Integrator Amplifier
𝐼𝐶
𝐼𝑅
X

25
Instrumentation Amplifier
𝑉𝑜𝑢𝑡1 𝑉𝑋
𝑉1 𝑅4 𝑅5
𝐴1 𝑅3
𝐴3
𝑅1 X
𝑉2
𝐴2 𝑅2
𝑉𝑜𝑢𝑡2 𝑅 𝑉𝑋 𝑅
Dr. Dang Phuoc Vinh 6 of Mechanical Engineering
Faculty 7
the END !
Firma convenzione
del Duomo di Milano
KHOA CƠ KHÍ
Firma convenzione
Năm học: 2022 - 2023
del Duomo di Milano
27 maggio 2015 Vinh
2
Content

Chapter 5
Fundamental of
Firma convenzione
Digital Electronics
del Duomo di Milano
4
Content
1. Basic of Digital Electronic
2. Algebraic Logic
3. Basic Logic Functions

Basic of Digital
Electronic
Firma convenzione
del Duomo di Milano
6
Analog vs. Digital
▪ Analog: Điện tử tương tự
▪ Digital: Điện tử số
✓ 0V - 0.8V → “0” / LOW
✓ 2.7V - 5V → “1” / HIGH

7
Analog vs. Digital

8
Analog vs. Digital

9
Analog vs. Digital

10
Binary number
▪ Binary Numbers are the flow of information in the
form of zeros and ones used by digital computers and
systems
▪ Digital circuits process signals that contain just two

voltage levels or states: Logic “0” and Logic “1”.
▪ Logic “1”: a higher voltage, such as 5V, which is

commonly referred to as a HIGH value
▪ Logic “0”: a low voltage, such as 0V or ground, and is

commonly referred to as a LOW value
11
Binary number
▪ These two discrete voltage levels representing the digital
values of “1” and “0” are commonly called: BInary digiTS, and
in digital and computational circuits and applications they
are normally referred to as binary BITS.
▪ The binary number system is a Base-2 numbering system
which follows the same set of rules in mathematics as the
commonly used decimal or base-10 number system
▪ Binary numbers use powers of two, ( 2n ) effectively doubling

the value of each successive bit as it goes, for example: 1, 2, 4,
8, 16, 32 etc.

12
Binary number
Electronic circuits and systems can be divided into 2 main
categories.
▪ Analogue Circuits – Analogue or Linear circuits amplify or
respond to continuously varying voltage levels that can
alternate between a positive and negative value over a
period of time.
▪ Digital Circuits – Digital circuits produce or respond 2
distinct voltage levels representing either a logic level “1” or
a logic level “0”.

13
3 kinds of Number
▪ Binary number (base-2)
→ Only “0” and “1”
▪ Decimal number (base-10)
→ The decimal or “denary” counting system uses the Base-
of-10 numbering system where each digit in a number
takes on one of ten possible values, called “digits”,
from 0 to 9
▪ Hexadecimal number
→ Hexadecimal Numbers group binary numbers into sets of
four allowing for the conversion of 16 different binary
digits
14
Binary to Decimal
▪ Base-2 to Base-10
▪ Decimal, base-10 or denary numbering system
▪ Important concept to understand as the binary numbering

system forms the basis for all computer and digital systems
▪ The decimal or “denary” counting system uses the Base-of-

10 numbering system where each digit in a number takes
on one of ten possible values, called “digits”, from 0 to 9,
e.g. 21310

15
Binary to Decimal
Most Least
Significant Bit Significant Bit

16
Binary to Decimal
Binary number: 101100101 → Decimal number ?
(256) + (64) + (32) + (4) + (1) = 35710

17
Decimal to Binary
Decimal number: 29410 → Binary number ?
Repeated Division-by-2 Method
100100110

18
Binary Number Names & Prefixes

19
Binary to Hexadecimal
▪ Hexadecimal Numbers group
binary numbers into sets of 4-
bit allowing for the conversion
of 16 different binary digits
▪ The “Hexadecimal” or simply
“Hex” numbering system uses
the Base of 16 system
▪ There are 16 possible digit
symbols
▪ 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, A, B,
C, D, E, F
20
Binary number: 1101 0101 1100 11112
→ Hexadecimal number: D5CF
Binary number: 11 0010 1101 10012

→ Adding of Additional 0’s to a Binary Number

21
Binary Coded Decimal
▪ Binary Coded Decimal, or BCD, is another process for
converting decimal numbers into their binary equivalents
BCD 8421
22
1101 0101 1100 1111 → D5CF
0b1101 0101 1100 1111
0xD5CF
11 0010 1101 1001 → 32D9

23
7 segment LED
COM
G F A B
CA: Common Anode
Anode chung
A B C D E F G Dp
E D C Dp
COM

24
7 segment LED
0 V = Segment On: B, C, F, G CA: Common Anode
Anode chung
5 V = Segment Off: A, D, E
A
F G B
A B C D E F G Dp
E C
1 0 0 1 1 0 0
D
0b.0001.1001
25
7 segment LED

Mathematical
Logic
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27
Mathematical Logic
▪ Using for digital circuits
▪ Study the relationship between logic variables
▪ Logic values involve elements that take on one of two
values, 0 and 1. Therefore, a logic variable can only be
equal to “0” or “1”

28
Mathematical Logic
Logic Negation (Inverse)
x = 1, xഥ = 0 ; x = 0, xത = 1 ; (തx) = xത ; (ധx) = x
Logic Sum
0+0=0 0+1=1 1+0=1 1+1=1
x+0=x x+1=1 x+x=x x + xത = 1
Logic Product
0.0 = 0 0.1 = 0 1.0 = 0 1.1 = 1
x.0 = 0 x.1 = x x.x = x x.തx = 0
29
Laws of Boolean
Commutative (hoán vị) Absorptive (hấp thu)
x+y=y+x x + x.y = x
x.y = y.x x.(x+y) = x
Associative (kết hợp) Morgan’s Theorem

x+y+z = (x+y)+z = x+(y+z) x + y = xത. yത
x.y.z = (x.y).z = x.(y.z) x. y = xത + yത
Distributive (phân phối)
x.(y+z) = x.y+x.z
x+(y.z) = (x+y)(x+z)
30
Laws of Boolean

31
Laws of Boolean

Logic Gate
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del Duomo di Milano
33
Logic Gates
▪ If a Boolean function, f, takes n inputs and
produces m outputs, the gate must have n input pins,
and m output pins.

34
AND gate
✓ Giving a high output only when both input A
and input B are high.
✓ As an electric circuit involving 2 switches in
series: A and B

35
AND gate
▪ The relationship of inputs and outputs can be
expressed in an equation: Boolean equation.
A B Output
A.B = Y 0 0 0
0 1 0
Ex: Burglar alarm = AND
1 0 0
(alarm switch ; door).
1 1 1

36
Timing Diagram
X
Z
AND Gate
Y
A B Output
0 0 0
0 1 0
1 0 0
1 1 1

37
Working Principle
A
Z
AND Gate
B
A B Output
0 0 0
0 1 0
1 0 0
1 1 1

38
3-input AND gate

39
OR gate
▪ Giving a high output when input A OR input B
are high.
▪ As an electric circuit involving 2 switches in
parallel: A and B

40
OR gate
A B Output
A+B=Y 0 0 0
▪ OR gates can also have 0 1 1
more than two inputs
1 0 1
1 1 1
41
NOT gate
▪ Just one input and one output
▪ Giving an output which is the inversion of the
input → inverse gate
▪ Giving a “1” output when input is “0” and vice
versa.

42
NOT gate
▪ The relationship of input and output can be
A=Y
▪ A bar over a symbol indicate the inverse of
output.
Input Output
1 0
0 1
43
NAND gate
▪ Can be considered as a combination of an AND
gate followed by a NOT gate
▪ Output is “0” only when input A and B are “1”
▪ Symbol: the AND symbol followed by a circle

44
NAND gate
A B Output
0 0 1
A.B=Y 0 1 1
1 0 1
1 1 0

45
NOR gate
▪ Can be considered as a combination of an OR
gate followed by a NOT gate
▪ Output is “1” only when input A and B are “0”
▪ Symbol: the OR symbol followed by a circle

46
NOR gate
A B Output
0 0 1
A+B=Y
0 1 0
1 0 0
1 1 0
47
XOR gate
▪ XOR stands for exclusive OR
▪ Output will be “1” when the inputs are different
▪ XOR operation is represented by the symbol 

48
XOR gate
A B Output
0 0
ഥ 𝐁 + 𝐀𝐁
Y=A⊕B=𝐀 ഥ 0 1
1 0
1 1
49
XNOR gate
▪ XNOR stands for exclusive NOR
▪ It is an XOR gate with its output inverted.
▪ XNOR operation is represented by the symbol (.)

50
XNOR gate
A B Output
0 0
Y = A (·) B
= 𝐀+𝐁 ഥ . (𝐀
ഥ + 𝐁) 0 1
1 0
1 1

51
Logic gate symbols

52
IC 7400: 2-input NAND gate

53
IC 7402: 2-input NOR gate

54
Application: AND gate

55
Application: AND & OR gate
ഥ
𝐀
A ഥB
𝐀
B
𝐀 ഥ B+𝐀𝐁
ഥ
𝐀
ഥ
𝐁 ഥ
B 𝐀𝐁 A B Output
0 0
0 1
1 0
1 1

56
F ( x, y, z) = x. y.z + x. y.z + x. y.z + x. y.z + x. y.z + x. y.z
x.y.z
x.y.z
x.y.z
F
x.y.z
x.y.z
x.y.z

x y z x y z
57
Boolean Expression
Sum of Products (SOP) Form
F = x. y. zത + xത. y. z + x. yത . z
Product of Sums (POS) Form

F = x + y + z xത + y + zത x + yത + z
Note: The SOP is more popular.

58
Example
Design an logic circuit with following functions:
F ( x, y, z) = x. y.z + x. y.z + x. y.z + x. y.z + x. y.z + x. y.z
Logic circuit: Previous slide
Comment: Complicated circuit.
Solution: Simplifying the Boolean function

59
Simplifying the Boolean function
Using logic functions/laws to simplify Boolean function
Example: Simplifying using logic laws
F ( x, y, z ) = x. y.z + x. y.z + x. y.z + x. y.z + x. y.z + x. y.z
F ( x, y, z ) = y.z + y.z + x.z
F ( x, y, z ) = z + x.z
F ( x, y, z ) = z + x.z + x.z
F ( x, y, z ) = z + x.
Comment: Not easy or even cannot be successful
Simplifying using the Karnaugh-map

60
Karnaugh-map
xy
00 01 11 10
z
3-variable Karnaugh-map
0
1
xy
00 01 11 10
zt
00
4-variable Karnaugh-map 01
11
10
61
Truth Table Expression
A B C S
0 0 0 0
0 0 1 0
0 1 0 1
ഥ 𝐂ത + 𝐀𝐁
𝐀𝐁𝐂ത + 𝐀𝐁
S= ഥ ഥ 𝐂 + ABC
0 1 1 0
1 0 0 1
1 0 1 1
Non-inverting variation → 1
1 1 0 0
Inverting variation → 0 1 1 1 1
62
Karnaugh - map
– Value of variations are expressed in blocks.
– Consecutive blocks have only one different variation.
Example: S = ABC + 𝐀 ഥ 𝐁𝐂ത + 𝐀𝐁 ഥ 𝐂ത
ഥ 𝐂 + 𝐀𝐁
A B C S
ഥ𝐁
AB 𝐀 ഥ ഥB
𝐀 AB ഥ
A𝐁 0 0 0 0
C 00 01 11 10 0 0 1 0
0 1 0 1 0 1 0 1
0
0 1 1 0
1 0 0 1 1
1 0 0 1
1 0 1 1
Not Consecutive Consecutive
1 1 0 0
1 1 1 1
63
Rules
1. Groups may not include any cell containing a zero
2. Groups may be horizontal or vertical, but not diagonal

64
Rules
3. Groups must contain 1, 2, 4, 8, or in general 2n cells.
n≥0

65
Rules
4. Each group should be as large as possible.

66
Rules
5. Each cell containing a one must be in at least one group.

67
Rules
6. Groups may overlap.

68
Rules
7. Groups may wrap around the table. The leftmost cell in a
row may be grouped with the rightmost cell and the top
cell in a column may be grouped with the bottom cell.

69
Rules
7. Groups may wrap around the table. The leftmost cell in a
row may be grouped with the rightmost cell and the top
cell in a column may be grouped with the bottom cell.

70
Rules
8. There should be as few groups as possible, as long as
this does not contradict any of the previous rules.

71
Rules

72
Rules
ഥ 𝐂ത + 𝐀
𝐎𝐮𝐭 = 𝐀 ഥ 𝐃 + 𝐁𝐂ത + 𝐁𝐃

73
Performance Steps
▪ B1: Convert logic function to the sum of product.
▪ B2: Set-up the Karnaugh-map according to number of
variations.
▪ B3: Fill values of logic function to the Karnaugh-map.
▪ B4: Set-up groups which have “1” value in the
consecutive blocks.
▪ B5: Re-write simplified functions.

74
Example
Simplifying the Boolean function using Karnaugh-map:
𝐹(𝑥, 𝑦, 𝑧) = 𝑥. 𝑦. 𝑧 + 𝑥. 𝑦. 𝑧 + 𝑥. 𝑦. 𝑧 + 𝑥. 𝑦. 𝑧 + 𝑥. 𝑦. 𝑧 + 𝑥. 𝑦. 𝑧
Step 1: Convert logic function to the sum of product
Step 2: Set-up the Karnaugh-map according to number

of variations. xy
00 01 11 10
• 3 variations z
0
• Karnaugh-map will be
1

75
Example
Step 3: Fill values of logic function to the Karnaugh-map.
F ( x, y, z ) = x. y.z + x. y.z + x. y.z
X Y Z F
0 0 0 0 + x. y.z + x. y.z + x. y.z
0 0 1 1 6 blocks Non-inverting variation → 1
0 1 0 0 have “1” value Inverting variation → 0
0 1 1 1
1 0 0 1 xy
00 01 11 10
1 0 1 1 z
1 1 0 1 0 1 1
Dr. Dang Phuoc Vinh
1 1 1 1 1 1 1 1
1
76
Example
Step 4: Set-up groups which have “1” value in the consecutive
blocks. xy
00 01 11 10
z A
0 1 1
1 1 1 1 1 B
Step 5: Re-write simplified function.

• F=A+B
• Group A: x = 1 unchanged → keep; y, z change → remove.
So: A = x
• Group B: z = 1 unchanged → keep; x, y change → remove.
So: B = z
Dr. Dang Phuoc Vinh F = A +Faculty
B = xof Mechanical
+z Engineering
77
Example
Simplifying the Boolean function using Karnaugh-map
F ( x, y, z , t ) = x. y.z.t + x. y.z.t + x. y.z.t + x. y.z.t
+ x. y.z.t + x. y.z.t + x. y.z.t + x. y.z.t
A
xy
00 01 11 10
zt A = z.t B = x. y.t
00 1 1 1 1 C = x.z.t D = x. y.t
01 1 F = A+ B +C + D
11 1 1 = z.t + x. y.t + x.z.t + x. y.t
10 1
Dr. Dang Phuoc Vinh
B C DMechanical Engineering
Faculty of
the END !
Firma convenzione
del Duomo di Milano

Bai Giang Ky Thuat Dien Tu

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TRƯỜNG ĐẠI HỌC BÁCH KHOA

Chapter 2: Diode & Application

Chapter 3: BJT & Application

Chapter 4: OPAMP & Application

Chapter 5: Fundamental of Digital Electronics

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

2. Slide “Kỹ thuật điện tử”, Huỳnh Việt Thắng, DUT

3. Đỗ Xuân Thụ, “Kỹ thuật Điện Tử”, NXB Giáo dục

4. Trần Quang Vinh, “Nguyên lý kỹ thuật điện tử”,

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

▪ Edison patented 1,093 of

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

▪ A low resistivity indicates a material that readily

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Resistor Variable Resistor

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

– High frequency noise filter: capacitor can be consider as

– Amplifier stage: allowing AC and blocking DC → block DC

– Frequency filter: combine with other passive devices such

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering