UNI

TII
CaseI
I:VGS<0andVDS>0

I
tisobser
vedt
hatast
henegat
ivegat
ebi
asv
olt
agei
sincr
eased

 Themax i
mum sat
urat
iondr
aincur
rentbecomessmal
l
erbecauset
heconduct
ing
channel
nowbecomesnarr
ower.

 Pi
nch-
offv
olt
agei
sreachedatal
owerv
alueofdr
aincur
rentI
DthanwhenVGS=0.

 Theohmi
cregi
onpor
ti
ondecr
eases.

 The val
ueofdrai
n-sour
cev
olt
ageVDSf
ort
heav
alanchebr
eakdownoft
hegat
e
j
unct
ionisr
educed.

Out
putChar
act
eri
sti
csorDr
ainChar
act
eri
sti
cs
Pinchoffvol
tage(
Vp)andcutof
fvol
tage(
VGS(
off
))ar
ebot
hthesamev
aluebut
opposi
teinsi
gn.

Vp=-VGS(
off
)

Ty
pesofJFET:
NchannelJFET

I
tismadewi
thanN-
typesi
l
iconchannel
thatcont
ains2P-
typesi
l
icont
ermi
nal
spl
acedonei
thersi
de.

Thecur
rentconduct
iont
akespl
aceduet
oel
ect
rons.

Mobi
l
ityofel
ect
ronsl
arge.

P-channelJFET

I
tismadewi
thanp-
typesi
l
iconchannel
thatcont
ains2n-
typesi
l
icont
ermi
nal
spl
acedonei
thersi
de.

Thecur
rentconduct
iont
akespl
aceduet
ohol
es.
Dy
nami
cOut
putResi
stance
Iti
sdynami cdrainresi
stancewhenJFETISoper
ati
ngi
nsaturat
ionregi
on.I
tisr
ati
oof
smallchangei ndr ai
nt osourcevolt
age(∆VDS)tocor
respondingchangeindrai
n
curr
entforconstantgatetosour
cevol
tage(VGS)

Ampl
if
icat
ionFact
or
Iti
s given by t
he rat
io ofsmallchange i
n drai
nto sour
ce v
olt
age (
∆VDS)t
o
cor
respondi
ngchangein∆VGSforconst
antdrai
ncurr
ent
.

Ther
ei sarel
ati
onbet
weentransconduct
ance(
gm)anddy
nami
cout
putr
esi
stance(
rd)
andthatcanbeest
abl
ishedi
nthefoll
owingway
.
Smal
lSi
gnalModel
:

I
nthi
smodel
,thegat
etosour
cej
unct
ioni
srepr
esent
edbyanopenci
rcui
tandnocur
renti
sdr
awnby
theinputt erminaloft heJFET.Iti
sbecauseoft hefact,theinputresistanceisv er
ylarge.Itwil
lbe
i
nterest
ingt oknow thatal t
hought
hegate-sourcejunct
ionappear sasanopenci r
cuityetthegatet o
sourcev oltageaffectst heval
ueofdrai
ncur r
ent.Iti
sindicat
edbyav oltagecontroll
edcurrentsource
whosev al ueisproportiontothegate-
sour
cev olt
age.TheFETdr ainresistance(Outputresist
ance)is
repr
esent edbyr d.
CommonSour
ceAmpl
if
ier

Theci
rcuitbel
owshowsatypi
calcommonsour ceampli
fi
erwi
tht
hev
olt
agedi
vi
derbi
as
aswel
l asthecoupl
i
ngandbypasscapaci
tor
sincl
uded

Thecommonsour cecir
cui
tprovi
desamedi
um i
nputandout
puti
mpedancelevel
s.Both
curr
entandv olt
agegaincanbedescri
bedasmedium,butt
heoutputi
stheinverseof
thei
nput,i
.e.180°phasechange.
CommonDr
ain/Sour
ceFol
lowerJFETAmpl
if
ier

Thel
i
ket
het
ransi
storemi
tt
erf
oll
ower
,theFETsour
cef
oll
owerconf
igur
ati
oni
tsel
fpr
ovi
desahi
gh
l
evelofbuff
eri
ngandahighinputi
mpedance.Theact
ualinputresi
stanceoft
heFETit
sel
fisveryhigh
asitisafiel
deff
ectdevi
ce.Thismeansthatthesourcefoll
owercircui
tisabl
etoprov
ideexcel
lent
per
formanceasabuff
er.

Thev
olt
agegai
nisuni
ty,
alt
houghcur
rentgai
nishi
gh.Thei
nputandout
putsi
gnal
sar
einphase.
CommonGat
eJFETAmpl
i
fier
Common gate FET conf
igur
ation provi
des a low i
nputi mpedance whil
e of
fer
ing a hi
gh out
put
i
mpedance.Ast hegatei
sgrounded,t hi
sactsasabar r
ierbetweeninputandoutputpr
ovidi
nghigh
l
evel
sofisol
ati
on,pr
event
ingfeedback,especi
all
yatver
yhighfrequenci
es.

Alt
houghthevol
tagegaini
shigh,t
hecurrentgainislowandt
heov
eral
lpowergai
nisal
sol
owwhen
comparedtot
heotherFETci
rcui
tconf
igur
ationsavai
labl
e.
FETasaVol
tageVar
iabl
eResi
stor
sade
FETi vi
cet
hati
susual
l
yoper
atedi
ntheconst
ant
-cur
rentpor
ti
onofi
tsout
putchar
act
eri
sti
cs.

Buti
fiti
soperatedont
heohmicregi
onpri
ortopi
nch-
off(
thati
swher
eVDSi
ssmal
l
,saybel
ow100
mV),
itwi
llbehav
easavolt
age-
var
iabl
eresi
stor
.

Iti
sduetothef
actt
hati
nthi
sregi
ondr
ain-
to-
sour
cer
esi
stanceRDScanbecont
rol
ledbyv
ary
ingt
he
bi
asvol
tageVGS.

I
nsuchappl
i
cat
ionst
heFETi
sal
sor
efer
redt
oasav
olt
age-
var
iabl
eresi
stororv
olat
il
edependent
r
esi
stor
.

I
tfi
ndsappl
i
cat
ionsi
nmanyar
easwher
ethi
spr
oper
tyi
susef
ul.

ThismeansthataJFETcanbeempl
oyedasav
olt
age-
var
iabl
eresi
storf
orsmal
lacsi
gnal
s,t
ypi
cal
l
y
thosel
esst
han100mV.

Wheniti
semployedinthisway
,itdoesnotr
equi
readcdr
ainv
olt
agef
rom t
hesuppl
y.Al
lthati
s
r
equi
redi
sanacinputsi
gnal
.
 MOSFET
TheMOSt ransi
stori
sal
socall
edasurf
acefi
eldef
fecttr
ansi
stor,si
nceitdependsoncontrolofcur
rentthr
oughat hinchannelatt
hesur
faceoft
he
semi
conductor
.Whenani
nver
sionr
egi
onisf
ormedundert
hegate,curr
entcanf
lowfrom dr
aint
osource(
forann-Channel
devi
ce).
Inasili
conMOSFET,t hegatecontactissepar at
edf r
om t hechannelbyani nsul
ati
ngsili
condioxide(SiO2)layer.Thechar gecarr
ier
soft heconducti
ng
channelconst
it
uteani nver
sioncharge,thatis,el
ect
ronsi nthecaseofap- t
ypesubstrat
e( n-
channeldevice)orholesinthecaseofann- ty
pesubstrat
e( p-
channeldevi
ce),i
nducedinthesemi conductoratthesil
icon-i
nsul
atori
nter
facebythev ol
tageappli
edt othegateel ect
rode.Theelect
ronsenterandexi
tthe
channelatn+sourceanddraincontactsinthecaseofann- channelMOSFET,andatp+cont act
sinthecaseofap- channelMOSFET.
MOSFETsar
eusedbot
hasdi
scr
etedev
icesandasact
iveel
ement
sindi
git
alandanal
ogmonol
i
thi
cint
egr
atedci
rcui
ts(
ICs)
.
MOSFETsalsohavethreet
erminals,namelyDrai
n(D)
,Source(S)andGat e(
G)andonemore(opti
onal)t
ermi
nalcal
ledsubst
rat
eorBody(B).MOSFETsare
al
soavail
abl
einbothty
pes,N-channel(NMOS)andP-channel(
PMOS) .MOSFETsarebasi
cal
l
yclassi
fi
edintot
wof or
ms.Itisamajor
it
ychar
gecarr
ierdev
ice.
I
tprov
ideshi
ghinputi
mpedance.I tactsasavolt
agecontr
oll
edcurrentsour
ce.

Sour
ce:I
tisat
ermi
nal
thr
oughwhi
chchar
gecar
ri
esent
erSemi
conduct
orbar
.
Dr
ain:I
tisat
ermi
nal
thr
oughwhi
chchar
gecar
ri
esl
eav
etheSemi
conduct
orbar
.
Channel
:Itisthepathbetweensourceanddr
aint
hroughwhi
chmaj
ori
tychar
ge
car
ri
estravel
sfrom Sour
cetodrai
n.
Gate:I
tisat
ermi
nalusedt
ocont
rolt
hef
low ofchar
gecar
ri
ersf
rom sour
cet
o
dr
ain.

Ty
pesofMOSFET
NChannel
Depl
eti
onTy
peMOSFET
NChannel
EnhancementTy
peMOSFET
PChannel
Depl
eti
onTy
peMOSFET
PChannel
EnhancementTy
peMOSFET
NChannel
Depl
eti
onTy
peMOSFET

Inann- channelMOSFET,t hesubst r

ateisp-t
ypesi l
i
con,andtheinversi
on
chargeconsistsofelectr
onst hatform aconductingchannelbetweenthe
n+sour ceandt hedraincontacts.AtDCcondi ti
ons,thedepl
etionregi
ons
andt heneutralsubstr
ateprovideisolat
ionbetweendev i
cesfabri
catedon
thesamesubst r
ate.

Wor
king:
CaseI
:VGS=0,
VDS>0(
VDSi
svar
iabl
e)
CaseI
I:VGS<0,
VDS>0(
VDSi
svar
iabl
e)
Wor
king:
CaseI
II
:VGS>0,
VDS>0
CaseI
:VGS=0andVDSi
svar
iabl
e(VDS>0)
Atanyappl i
edVDS,channelpot
enti
aldecreasesf
rom drai
ntosource,hence,dr
ainendsidePNj unctionbet
weenchannel&bodyi satmor eReversebi
ased
comparet osour ceendsidePNjunct
ionbetweenchannelandbody.Hencepenet rat
ionofdepleti
onl ay
eri
nchannelismor eatdrai
nendsi decompareto
sourceendsi de.
Themi ni
mum gatetosourcevol
tage(VGS)requi
redtoturnont heMOSt ransi
storisknownasVT (Threshol
dVoltage)
.Itisnegati
vef
orN
channeldepleti
ontypeMOSFET.
DuetoVDS>0, electr
onsaredr
if
tsbyl at
eral
elect
ri
cfiel
dsfrom sour
cet odrai
nthr
oughthechannel
.Whentheelectr
onsreachedtothet
erminat
ionofthe
channel
,thedepleti
onregi
onadjoini
ngthedrai
ngetsaccelerat
edinthedir
ecti
onofit
.Theinj
ectedel
ect
ronsacceler
atet
hisprocessanddrai
ncurrent
becomesat ur
atedduetosatur
ationindri
ftvel
oci
tyandK.E.ofelect
rons.
VDS(sat.
)=VGS–VT( over
dri
vevolt
age):i
sthev al
ueofVDSatwhi chchanneli
sdeplet
edcompl etel
ydepletedatdr
ainsideanddr aincurr
entbecomesat urat
ed.
Increasingt hedrai
nbiasbeyondthispoi
nt(VD( sat.
))causesthepointatwhichthechannelgetspinchedofftomov emor eandmor ei
ntothechannel,cl
oser
tothesour ceend.Electr
onsinthechannelarepulledintothepinch-
of
​ fregi
onandtravelatthesaturati
ondri
ftveloci
tybecauseoft hever
yhi ghlongi
tudi
nal
electri
cf i
eldalongthechannel
.Now, t
hedraincurrentissai
dt obeinthesaturat
ionr
egionbecauseitdoesnotincreasewithdrainbiassi
gnifi
cantl
y.

Out
putChar
act
eri
sti
cs
CaseI
I:VGS<0andVDSi
svar
iabl
e(VDS>0)

Whenagat e-sourcebi
asVGS i
sappl
ied
Out
putChar
act
eri
sti
cs to ann-channelMOSFET int heless
than zer
ov olt
,holes mov eint he
channelf
rom source.
Theconcent r
ati
onofdepl et
ioncharge
i
ncreases ( + ions) and a smal l
er
number of el ectrons avai
labl
e for
conduction. So, dr ai
n cur r
ent
decreases.

CaseI
II
:VGS>0andVDSi
svar
iabl
e(VDS>0)
Whenadrai
n-sour
cebi
asVDSi
sappl
ied
Out
putChar
act
eri
sti
cs t
oann-channelMOSFETintheabove
thresholdconducti
ngst ate(VGS >Vt h),
electronsmov einthechanneli nversi
on
l
ay erf r
om sourcetodrain.Itdecreases
the concentrat
ion ofDepl et
ion charge
and i tenhances the channelsi nce a
greater number of el ectrons ar e
availablei
nthechannelforconduct i
on.
Achangei nthegate-sour
cevol
tageVGS
al
terstheelectr
onsheetdensityinthe
channel
, modul at
ing t he channel
conductanceandthedev i
cecur
rent
.

Out
putChar
act
eri
sti
cs
Fornegat
iveval
ueofVGS>Vt h,
NChannelDepleti
onTy pe
MOSFETwor ksinDepleti
on
modeandf orposi
ti
vev al
ueof
VGS,NChannelDeplet
ionType
MOSFEToper at
esin
Enhancementmode.
NChannel
EnhancementTy
peMOSFET
Then+sour
ceanddr ai
nregionsaredif
fusedorimplant
edintoar el
ati
vel
yli
ghtl
ydopedp-t
ypesubstr
ate,
andat hi
noxi
delayerseparat
estheconducti
nggate
fr
om t
heSisurf
ace.Nocurrentfl
owsfrom drai
ntosourcewithoutaconducti
ngnchannelbet
weenthem (Ther
eisnophysi
calchannel)
.Thethr
esholdvol
tage
VTist
heminimum gatevol
tagerequi
redtoinducethechannel(Vi
rtual
Channel)
.Thethr
eshol
dvolt
ageisposit
ivef
ornchannelEnhancementty
peMOSFET.

Wor
king:
Whenapositiv
ev olt
ageisappli
edtothegaterel
ati
vet
othesubstrat
e(whi
chisconnect
edtothesourceinthiscase),posi
ti
vechargesareineff
ectdeposit
ed
onthegatemet al
.Inresponse,
negat
ivechargesarei
nducedintheunder
lyi
ngSi
,bythefor
mationofadepl eti
onr egi
onandat hi
nsurfaceregi
oncontaini
ng
mobil
eelect
rons.Theseinducedel
ect
ronsformthechanneloft
heFETandal l
owcurr
enttof
lowfrom drai
ntosour ce.
Ast hegat ev olt
agei ncreases,moreelectronchar geisinducedi nt hechanneland,theref
ore,thechannelbecomesmor econducting.Thedr ai
ncurrent
i
niti
all
yincreaseslinearl
ywi ththedrai
nbi as(t
hel i
nearregime).Increasingthedrai
nbiasbey ondthi
spoint(VD(sat
.))causesthepointatwhi chthechannel
getspinchedof ftomov emor eandmor eintothechannel,closertot hesourceend.El
ectronsinthechannelarepul
ledintothepinch-
of
​ fregi
onandt r
avelat
thesaturat
iondr i
ftvelocitybecauseofthev eryhighlongi
tudinalelectri
cfiel
dalongthechannel.Now, t
hedr ai
ncurr
entissaidtobei nt hesatur
ati
onregion
becauseitdoesnoti ncreasewi thdr
ainbiassignif
icantl
y.
ModesofOper
ati
on(
NMOS):
w Cut
-Of
fRegi
on:
VGS<VT &I
D=0

I
nCutof
fregi
on,
MOSFETcanbeusedasanOFFSWI
TCH.

VGS>VT:ON
VGS>VT&VDS<(
VGS–VT)
:Li
nearRegi
on(
Tri
odeRegi
on)
LinearRegioni
salsoknownasohmicregi
onorTrioderegion.I
nli
near
regionitcanactasavolt
agevar
iabl
eresi
stor
.(dependingonVGS)
Li
near-ONSWI
TCH

VGS>VT&VDS>=(
VGS–VT)
:Sat
urat
ion
I
nsat
urat
ionr
egi
on,
itcanactasanampl
i
fier
.

Q+
Oxi
deCapaci
tance
PChannelDepl
eti
onTy
peMOSFET
Inanp- channelMOSFET,t hesubstr
ateisn- t
ypesili
con,andtheinversi
on
chargeconsistsofhol esthatform aconduct ingchannelbetweenthep+
sourceandthedr ai
ncontacts.Athi
noxidel
ayerseparatest
heconducti
nggate
from t
heSisur f
ace.Thereisaconducti
ngPt ypepathbetweenthesourceand
thedrai
nisreferr
edasachannel .
Duetothi
schannel
,PchannelDepl
eti
onTy
peMOSFEToper
atesi
ndepl
eti
on
modeaswell
asenhancementmode.
Wor
king:
CaseI
:VGS=0,
VDS<0(
VDSi
svar
iabl
e)
CaseI
I:VGS>0,
VDS<0(
VDSi
svar
iabl
e)
CaseI
II
:VGS<0,
VDS<0(
VDSi
svar
iabl
e)

Wor
king:
CaseI
:VGS=0,
VDS<0(
VDSi
svar
iabl
e)
Atanyappl
iedVDS<0,channel
potent
ial
decr
easesf
rom dr
aint
osource,
hence,
drai
nendsi
dePNj unct
ionbetweenchannel
&bodyisatmoreRev
ersebi
ased
comparetosourceendsidePNjunct
ionbet
weenchannelandbody
.Hencepenetr
ati
onofdepl
etionl
ayerinchanneli
smor eatdr
ainendsi
decompareto
sour
ceendside.
CaseI
I:VGS>0,
VDS<0(
VDSi
svar
iabl
e)
Whenagat
e-sour
cebi
asVGSi
sappl
i
edt
oanp-
channel
MOSFETi
nthegr
eat
ert
hanzer
ovol
t,hol
esmov
eint
hechannel
from sour
ce.
Theconcent
rat
ionofdepl
eti
onchar
gei
ncr
eases(
-ions)andasmal
l
ernumberofhol
esav
ail
abl
eforconduct
ion.So,
drai
ncur
rentdecr
eases.

CaseI
II
:VGS<0,
VDS<0(
VDSi
svar
iabl
e)

Whenadr
ain-
sourcebi
asVDSi
sappl
ied
t
oanp-channelMOSFETintheabove
threshol
dconduct i
ngstate( VGS<Vt h)
,
holes movei nt he channeli nv
ersion
l
ay erfr
om sourcetodrain.Itdecreases
theconcentrati
onofDepl eti
onchar ge
and itenhancest hechannelsi ncea
greaternumberofholesar eavail
ablein
thechannelforconducti
on.
Achangei nthegat e-
sour
cevolt
age
VGSalt
erstheholessheetdensit
yinthe
channel
, modulat
ingthechannel
conductanceandt hedevi
cecurr
ent
PChannelEnhancementTy
peMOSFET
Thep+sour
ceanddr ai
nregionsaredif
fusedorimpl
ant
edintoar el
ati
vel
yli
ghtl
ydopedn-t
ypesubstr
ate,
andat hi
noxi
delayersepar
atestheconducti
nggate
fr
om t
heSisurf
ace.Nocurrentfl
owsfrom drai
ntosour
cewithoutaconducti
ngpchannelbet
weenthem (Ther
eisnophysi
calchannel)
.Thethr
esholdvol
tage
VTist
heminimum gatevol
tagerequi
redtoinducet
hechannel(Vi
rtual
Channel)
.Thethr
eshol
dvolt
ageisposit
ivef
orpchannelEnhancementtypeMOSFET.

Holes
Wor
king:
Whenanegat ivevolt
ageisappli
edt othegaterelati
vet othesubst
rat
e( whi
chisconnectedtothesour
cei nthi
scase),negati
vechar
gesareineffect
deposit
edont hegatemetal.I
nresponse,holesar
ei nducedintheunder
lyi
ngSi,byt
hef or
mat i
onofadepl
eti
onregionandat hi
nsurf
aceregi
oncont
aining
mobileelect
rons.Thesei
nducedholesfor
mt hechannel oft
heFETandall
owcur r
entt
oflowf r
om sour
cet
odrain.
Ast hegatev ol
tagedecr eases,morehol esar einducedi nthechanneland,therefor
e,thechannelbecomesmor econducti
ng.Thedrai
ncurrentinit
iall
y
i
ncreaseslinearl
ywitht hedr ai
nbias(thel i
nearregime) .Increasingthedrai
nbiasbeyondthispoint(
VD( sat
.)
)causesthepoi
ntatwhichthechannelget s
pi
nchedof ftomov emor eandmor eintot hechannel ,closertot hesourceend.Holesinthechannelarepull
edintothepi
nch-of
​fregi
onandtravelatt he
satur
ati
ondr iftvel
ocitybecauseoft hev eryhighl ongit
udi nalelectr
icfi
eldal
ongt hechannel
.Now,thedr ai
ncurr
entissai
dt obeinthesat
urati
onr egion
becauseitdoesnoti ncreasewithdrai
nbiassi gnif
icantl
y.
ModeofOper
ati
on(
PMOS)
:
ChannelResi
stance:
I
tist
her
esi
stanceof
fer
edbyMOSFETi
nli
nearr
egi
on.(
i.
e.,
ther
eci
procal
oft
hesl
opeoft
heout
putchar
act
eri
sti
csi
nli
nearr
egi
on.
)

Ver
ySmal
l

Tr
ansconduct
ance:

I
nSat
urat
ion:
Thet
ransconductancecanbei ncr easedbyincreasi
ngt heW/Lr ati
o,and
al
soi
ncreasi
ngt heoverdr
ivevoltage( VOV=VGS- VT).Butincr
easingVOV
i
mpli
esthattheoper at
ingpointf orVDShast oincreaseinorderforthe
MOSFETtobei nthesatur
ationregion.

gm i
spr
opor
ti
onal
tot
hesquar
eroot
soft
hedr
aincur
rentI
DandW/
L.

Att
hispoi
nt,
not
ethat

I
nter
msofDr
ainCur
rent
: 1.The t
ransconductance gm ofa MOSFET i
s geomet
ry dependent
wher
east
hatoft heBJTi snot
.

2.Thet
ransconduct
anceofaBJTi
smuchl
argert
hant
hatofaMOSFET.
ChannelLengt
hModul
ati
on:
AsVDSbecomelargerthan(VGS-
VT),t
hedepl
eti
onregionsurroundingthedr
ainjunct
ionincr
easesit
swidth.Thi
sincr
easei
nthewidt
hofthedepl
eti
onregi
on
sur
roundi
ngthedrai
njuncti
ondecreasest
heeffect
ivechannellength.I
ntur
n,thi
sdecreaseineff
ecti
vechannell
engt
hincr
easest
hedrai
ncurr
ent,r
esul
ti
ngin
whatiscommonlyref
erredtoaschannell
engt
hmodul ati
on.
Channel
-l
engthmodulationisi
mpor
tantbecausei
tdeci
dest
he
MOSFETout putr
esi
stance.

Resistance is proport
ionalt o channellength,shor
tening the
channeldecr easesitsresist
ance,causingani ncr
easeincur r
ent
wit
hi ncreaseindrai
nbiasf ora 
MOSFET  operat
ingi
nsaturati
on.

Wit
hout channel-
lengt
h modul
ati
on (
for λ = 0)
,the out
put
r
esist
anceisi
nfini
te.
MOSCapaci
tance

Mostoft
hecapaci
tor
sint
hesmal
lsi
gnal
model
arer
elat
edt
othephy
sical
transi
stor
.
Ov
erl
apCapaci
tances:
Ov
erl
apCapaci
tancesar
eduet
oboundar
yef
fect
sbet
weent
hegat
eandsour
ceandbet
weent
hegat
eandt
hedr
ain.

Cgsi
spr
imar
il
yduet
othechangei
nchannel
char
geasr
esul
tofachangei
nVGS.

Thecapaci
tanceCgdsomet
imescal
l
edt
heMi
l
lerCapaci
tance.
Junct
ionCapaci
tance

Wher
e,Cj
0isaj
unct
ioncapaci
tanceat0Vbi
asandAs=Ar
eaofSour
ceJunct
ion

i
sapot
ent
ial
bar
ri
er.
Smal
lSi
gnalModel

AMOSFETbehavesasacur
rentsour
cewheni
tisoper
ati
ngi
nthe
sat
urat
ionr
egi
on.

MOSTr ansi
storasanampli
fi
ershouldbeoperatedinthesatur
ati
on
regi
on.Inthisregi
on,thetr
ansist
oractsasav ol
tage-
contr
oll
ed
curr
entsource,and t
hedraincurrenti
saf uncti
onofVgs.The
rel
ati
onshi
pbetweentheVGSanddr ai
ncurr
entisnon-li
near
.

Drai
ncur
rentdependsont
hreshol
dvol
tagewhi
chi
ntur
ndepends
onVSB.

Back-
gat
eTr
ansconduct
ance:
Wher
e,Cgd=Ov
erl
apCapaci
tancebet
weenGat
eandDr
ain

Cgs=Ov
erl
apCapaci
tancebet
weenGat
eandSour
ce

Csb=Rev
erseBi
asJunct
ionCapaci
tance

Cdb=Rev
erseBi
asJunct
ionCapaci
tance
Si
ncegateisi
nsul
atedfrom channelbygat
e-oxi
de,
inputr
esi
stance
gds=1/
ro=Out
putConduct
ancebet
weendr
ainandsour
ce oft
ransi
stori
sinf
ini
te.
(
reci
procal of out
put r
esi
stance) (
Fini
te f
or Channel l
engt
h
Modul
ati
on)

gmbVbs=Vol
tageDependentCur
rentSour
ceduet
oBodyEf
fect
MOSFETBi
asi
ng

Zer
oBi
as
Dr
ainFeedbackBi
as
Vol
tageDi
vi
derBi
as
CommonSour
ceAmpl
if
ier
:

Fi
gurebel
owshowst hecommonsour ceampli
fi
ercir
cuit
.Int
hisci
rcui
ttheMOSFETconvert
svari
ati
onsi
nthegate-sourcev
olt
agei
ntoasmal
l
si
gnaldr
aincur
rentwhichpassest
hrougharesi
sti
veloadandgenerat
estheampl
if
iedvol
tageacr
ossthel
oadresistor
.
CommonSour
ceAmpl
if
ierwi
thVol
tageDi
vi
derBi
as
Thus,t
hevoltagegai
nofCSampl i
fi
eri
sdependsuponthetr
ansconduct
ancegm,t
hel
inearr
esi
storr
oandl
oad.I
nor
dert
oincr
easet
hegai
n
wehavetoincreaset
hegm.I
ntur
nwehav et
oincr
easether
ati
o.
Hencethegainofampl i
fi
erisincr
easeswithincreasi
ng'W'anddecreasi
ng'
L'
.Theror
esi
stanceisappear
sinshuntwit
hRDbecauseofthi
sthe
ef
fectofro(i
.e.channel
lengt
hmodul at
ion)decreasesthevol
tagegai
nofampli
fi
eront
heotherhandtheeff
ectofpar
all
elcombi
nat
ionofroand
RDdecreasestheoutputimpedance(Rout)whichisthebenefi
cial
eff
ect.
I
nor dert
oincreaset
hegainoftheampli
fi
eral
ongwi
thgm anot
heri
mpor
tantf
act
ori
sthel
oadi
mpedanceconnect
edatt
heout
put
.Tohav
e
l
argergai
nloadimpedanceshoul
dbel
arger
.
CommonDr
ain/Sour
ceFol
lower
Thesour
cef
oll
ower(
alsocal
l
edt
he“
common-
drai
n”st
age)canoper
ateasav
olt
agebuf
fer
.
Thesourcefol
l
owerf eat
uresaver
yhi
ghi nputresi
stance(i
deal
ly,i
nfi
nit
e),ar
elat
ivel
ylowoutputresi
stance,andanopen-
cir
cui
tvol
tagegai
n
thati
snearuni
ty.Thus,t
hesour
cefol
lowerisideal
lysuit
edfori
mplement i
ngt
heuni t
y-gai
nvol
tagebuffer
.
Thesour
cefol
l
oweri sal
sousedast
heoutput(i
.e.
,l
ast)stagei
namulti
stageampli
fi
er,
wherei
tsfunct
ioni
stoequi
ptheov
eral
lampl
i
fierwi
tha
l
owoutputr
esi
stance,t
husenabl
i
ngi
ttosupplyr
elati
vel
ylargel
oadcur
rentswi
thoutl
ossofgai
n.
Further
,thesour
cef ol
lowerexhi
bitahi
ghinputi
mpedanceandamoder ateoutputi
mpedance.Thedr
awbackofsour
ce
fol
lowerarenonl
ineari
tyduetobodyeff
ectandpoordr
ivi
ngcapabi
li
tyoft
heinputsi
gnal
.
CommonGat
eAmpl
if
ier
Acommon-
gate(CG)stagesensesthei
nputatt
hesour
ceandpr
oducest
heout
putatt
hedr
ain.Thegat
eisconnect
edt
oadcv
olt
aget
o
est
abl
i
shpr
operoper
ati
ngcondit
ions.
Theimport
antpoi
ntisthegai
nisposit
ive,furt
hertheinputi
mpedancei
sgiv
enbywhi
chshowst hatt
hei
nputi
mpedanceofcommongate
ampli
fi
eri
srel
ati
vel
ylow.Fur
ther
more,t
hei nputimpedanceofofcommongat
est
agei
srel
ati
vel
ylowonlyi
fthel
oadr
esist
anceconnect
edt
o
thedr
aini
ssmall
.

Common-
sour
ceampl
if
ier
:goodv
olt
ageampl
if
ier
,bet
tert
ransconduct
anceampl
if
ier
–Lar
gev
olt
agegai
n(Negat
ive)
–Hi
ghi
nputr
esi
stance
–Medi
um /hi
ghout
putr
esi
stance
•Common-
drai
nampl
if
ier
:goodv
olt
agebuf
fer
–Vol
tagegai
n≈1
–Hi
ghi
nputr
esi
stance
–Lowout
putr
esi
stance
•Common-
gat
eampl
if
ier
:goodcur
rentbuf
fer
–Cur
rentgai
n≈1
–Lowi
nputr
esi
stance
–Hi
ghout
putr
esi
stance
MOSFETasaSwi
tch
CMOS
CMOSorCompl ement
aryMet
alOxi
deSemiconduct
orisacombinat
ionofNMOSandPMOStransi
stor
sthatoper
atesundert
heappl
i
edel
ect
ri
cal
fi
eld.Thest
ruct
ureofCMOSwasini
ti
all
ydevel
opedforhi
ghdensit
yandlowpowerl
ogi
cgat
es.
TheNMOSandPMOSar ethet y
pesofMetalOxi
deSemi conduct
orFiel
dEff
ectTr
ansi
stor
s( MOSFET).TheCMOSt
ransi
stor
sar
eusedi
nvar
ious
appl
i
cat
ions,
suchasampl
i
f i
ers,swi
tchi
ngci
rcui
ts,
logi
ccircui
ts,
Int
egrat
edcir
cui
tchi
ps,micropr
ocessor
s,et
c.
Thei
mportanceofCMOSi
nsemiconduct
ortechnologyisi
tsl
owpowerdi
ssi
pat
ionandl
owoper
ati
ngcur
rent
s.I
tsmanuf
act
uri
ngr
equi
resf
ewer
st
epsascomparedtot
heBi
pol
arJuncti
ontr
ansistors.
Connect
ionset
upofCMOS
Thepr
act
ical
const
ruct
ionoft
heCMOSt
ransi
stori
sshowni
nthebel
owi
mage:
I
tcompr
isestheNMOStransi
stort
hathasN+r
egi
onsatt
hesour
ceanddr
aint
ermi
nalandp-
typesubst
rat
e.Si
mil
arl
y,t
hePMOSt
ransi
storhas
t
woP+regionsandann-
typesubst
rat
e.
Wor
kingofCMOS
Thestruct
ureasshownconsi stsoftheNMOSt ransi
stori
nv ertedont hetopoft
hePMOSt ransist
or.Thesubstr
ateisoft
heP-t
y pe,andthreeN+
regi
ons.ThetwoN+r egionsar esmallandthethir
dN+r egioni slarge.Thetwosmall
err
egionsareapar toftheNMOSt r
ansi
stor,whil
ethethir
d
N+r egi
onisapartoft hePMOSt r
ansist
or.Thet woP+r egi onsar ediff
usedi
ntothel
argerN+r egi
ontoformt hePMOSt r
ansistor.Thetop
surf
aceisprot
ect
edandcov eredusingtheSil
icondioxi
delay er(SiO2)withal
uminum'
smetall
izati
on.
CMOShast hel
eastamountofpowerdi
ssipati
onintheswi
tchi
ngappl
i
cat
ions.I
tisbecausewhenonet
ransi
stori
sOFF,
theot
herbecomesON.
Forexampl
e,i
fPMOSisON, t
heNMOSt ransist
orwil
lbeOFF.
CMOSI
nver
ter
WhenVINi slow,t
heNMOSi s" off
",whi
let
hePMOSstay
s"on"
:inst
ant
lychargi
ng
VOUTtologichi
gh.WhenVinishigh,t
heNMOSis"
onandthePMOSis"on:dr
aini
ng
thev
olt
ageatVOUTt ol
ogi
clow.
JFETHi
ghFr
equencySmal
lSi
gnalModel