U20EC090 EC: 304 DIC 2023

EXPERIMENT: 2

AIM: To plot the forward and reverse characteristics of PN junction

diode and extract the PN junction diode following parameters
for the given diode specifications:

η ideality factor (for silicon diode) N=2,

IS (saturation current) =1E-12A,
parasitic resistance RS=10Ω,
zero bias junction capacitance (CJO)=5pf,
transit time (TT)=10ns,
junction potential (VJ)=1V,
reverse break down voltage (BV)=10V.

a) Forward resistance cut in voltage from forward

characteristic.
b) Reverse saturation current after break down and reverse
resistance from reverse characteristics.
c) Reverse recovery time of a diode (trr) by applying pulse
input
SOFTWARE: Ng spice
THEORY:
PN – Junction Diode
A P-N junction is an interface or a boundary between two semiconductor material types,
namely the p-type and the n-type, inside a semiconductor.

As we know, if we use different semiconductor materials to make a P-N junction, there

will be a grain boundary that would inhibit the movement of electrons from one side to the
other by scattering the electrons and holes and thus, we use the process of doping. We will
understand the process of doping with the help of this example. Let us consider a thin p-
type silicon semiconductor sheet. If we add a small amount of pentavalent impurity to this,
a part of the p-type Si will get converted to n-type silicon. This sheet will now contain
both the p-type region and the n-type region and a junction between these two regions.
The processes that follow after forming a P-N junction are of two types – diffusion and
drift. There is a difference in the concentration of holes and electrons at the two sides of a
junction. The holes from the p-side diffuse to the n-side, and the electrons from the n-side
diffuse to the p-side. These give rise to a diffusion current across the junction.

There are two operating regions in the P-N junction diode: P region and N region There
are three biasing conditions for the P-N junction diode, and this is based on the voltage
applied:

Digital Integrated Circuit Rahul Jadav

 U20EC090 EC: 304 DIC 2023
Zero bias: No external voltage is applied to the P-N junction diode.

V-I Characteristics of P-N Junction Diode:

CODE: Circuit Diagram :

Forward bias Characteristics

PN Junction Forward Charecterist

.model diode D(N=2 IS=1E-12A RS=10 CJO=5p TT=10ns VJ=1V BV=10v)

Vin 1 0 5
r1 1 2 1k
d1 2 0 diode

.dc Vin 0 5 0.01

.control
run
*plotting input and output voltages
plot -I(Vin)
set hcopydevtype=postscript
hardcopy pn_fwd.ps -I(Vin)
.endc
Digital Integrated Circuit Rahul Jadav
U20EC090 EC: 304 DIC 2023
.end

Reverse bias Characteristics

PN Junction Forward Charecterist

.model diode D(N=2 IS=1E-12A RS=10 CJO=5p TT=10ns VJ=1V BV=10v)

Vin 1 0 5
r1 1 2 1k
d1 2 0 diode

.dc Vin -15 0 0.01

.control
run
*plotting input and output voltages
plot -I(Vin)
set hcopydevtype=postscript
hardcopy pn_rev.ps -I(Vin)
.endc
.end

Reverse Recovery time

PN Junction Forward Charecterist

.model diode D(N=2 IS=1E-12A RS=10 CJO=5p TT=10ns VJ=1V BV=10v)

Vin 1 0 PULSE(5 -5 0ns 0.001ns 0.001ns 15ns 30ns)

r1 1 2 1k
d1 2 0 diode
.tran 1ns 80ns
.control
run
*plotting input and output voltages
plot -I(Vin)
plot V(1)

set hcopydevtype=postscript
hardcopy rev_rec.ps -I(Vin)
.endc
.end

Digital Integrated Circuit Rahul Jadav

 U20EC090 EC: 304 DIC 2023
OUTPUT :
Forward bias Characteristics

Reverse bias Characteristics

Digital Integrated Circuit Rahul Jadav

 U20EC090 EC: 304 DIC 2023

Reverse Recovery time

CALCULATION : a) Forward resistance cut in voltage from forward

𝛥𝑣
characteristic = 𝑅𝑓𝑤𝑑 = =
𝛥𝐼

b) Reverse saturation current after break down and reverse

𝛥𝑣
resistance from reverse characteristics = 𝑅𝑟𝑒𝑣 = 𝛥𝐼 =

c) Reverse recovery time of a diode (trr) by applying pulse

input =

Digital Integrated Circuit Rahul Jadav

 U20EC090 EC: 304 DIC 2023

CONCLUSION : After Performing this experiment, we observed that by increasing value of R cut-off voltage
of diode increases, here the forward resistance of diodes is less then reverse resistance. And
measured reverse recovery time is obtained 15nS for given specification diode.

Here I also observed that on increasing value of resistor R the reverse resistance increases.

SIGNATURE

Digital Integrated Circuit Rahul Jadav