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Lecture 2 PDF
Lecture 2 PDF
types
Intrinsic Extrinsic
pure Doped
semiconductor semiconductor
N-type P-type
𝑛=𝑝
We doped the
semiconductor material
with atoms of group 5
(donor atoms) as phosphors
atoms
𝑛 = 𝑝 + 𝑁𝐷+
We doped the
semiconductor material
with atoms of group 3
(acceptor atoms) as
aluminum atoms
𝑝 = 𝑛 + 𝑁𝐴−
𝐸𝑔 : energy gap
𝐸𝑐 :conduction band edge
𝐸𝑣 : valence band edge
Dr. Shery Asaad EPM 105 Lecture 2 8
Energy Band Diagram of intrinsic semiconductor
𝐸𝐹 : Fermi- level
𝐸𝐶 −𝐸𝐹
−
𝑛 = 𝑁𝑐 𝑒 𝐾𝑇
𝑁𝑐
𝑜𝑟 𝐸𝐶 − 𝐸𝐹 = 𝐾𝑇 ln
𝑛
𝐸𝐹 −𝐸𝑉
−
𝑝 = 𝑁𝑉 𝑒 𝐾𝑇
𝑁𝑉
𝑜𝑟 𝐸𝐹 − 𝐸𝑉 = 𝐾𝑇 ln
𝑝
Dr. Shery Asaad EPM 105 Lecture 2 13
General relations of semiconductor at thermal
equilibrium
Where:
n: electron density (concentration)
No. of free electrons per unit volume [/𝑐𝑚3 ]
p: hole density (concentration)
No. of holes per unit volume [/𝑐𝑚3 ]
T: Temperature in Kelvin
𝑛 = 𝑁𝐷+
𝑛𝑖2
𝑝=
𝑛
𝑁𝑐
𝐸𝐶 − 𝐸𝐹 = 𝐾𝑇 ln
𝑛
𝑁𝑉
𝐸𝐹 − 𝐸𝑉 = 𝐾𝑇 ln
𝑝
𝑝 = 𝑁𝐴−
𝑛𝑖2
𝑛=
𝑝
𝑁𝑐
𝐸𝐶 − 𝐸𝐹 = 𝐾𝑇 ln
𝑛
𝑁𝑉
𝐸𝐹 − 𝐸𝑉 = 𝐾𝑇 ln
𝑝
Dr. Shery Asaad EPM 105 Lecture 2 17
Example 1
For an N-type semiconductor having 𝑁𝐷 = 1016 /𝑐𝑚3
𝑛𝑖 = 1.5 × 1010 /𝑐𝑚3 , 𝑁𝑐 = 2.8 × 1019 /𝑐𝑚3
Sol.
It is an N- type
𝑛 = 𝑁𝐷 = 1016 /𝑐𝑚3
2.8 × 1019
𝐸𝐶 − 𝐸𝐹 = 1.38 × 10−23 × 300 ln
1016
𝐸𝐶 − 𝐸𝐹 = 3.28 × 10−20 𝐽
1 𝑒𝑉 = 1.6 × 10−19 𝐽
𝐸𝐶 − 𝐸𝐹 𝑖𝑛 𝑒𝑉
𝐾𝑇 𝑁𝑐
𝐸𝐶 − 𝐸𝐹 = ln 𝑒𝑉
𝑞 𝑛
2.8 × 1019
𝐸𝐶 − 𝐸𝐹 = 0.025 ln = 0.2 eV
1016
Sol.
It is an P- type
𝑝 = 𝑁𝐴 = 1016 /𝑐𝑚3
2.8 × 1019
𝐸𝐶 − 𝐸𝐹 = 0.025 ln 𝑒𝑉
22500
𝐸𝐶 − 𝐸𝐹 = 0.8 𝑒𝑉