University of Engineering and Technology - VNU

Semiconductor devices and Integrated Circuit

Dr. Tran Cuong Hung

Email: tchung@vnu.edu.vn

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Chapter 3
Transistor BJT

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Content

• BJT Structure
• BJT Operation
• BJT Configuration

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Transistor BJT

BJT Switches
BJT Amplifiers

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BJT Structure

(BJT=Bipolar Junction Transistor)

First transistor Transistor

December 23, 1947
The term bipolar refers to the use of both holes and electrons as current carriers in
the transistor structure.
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BJT Structure

• The BJT has three regions called the

emitter, base, and collector. Between
the regions are junctions as indicated
n-p-n

Emitter= lớp n Base= lớp p Collector= lớp n

• The terminals are labeled:

p-n-p
▫ E – Emitter
▫ B – Base
▫ C – Collector
Emitter= lớp p Base= lớp n Collector= lớp p

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BJT Structure

Emitter: The most heavily doped of the three semiconductor regions of a BJT
Base: The base is thin and lightly doped compared to the other regions
Collector: The largest of the three semiconductor regions of a BJT
E>C>B

• E-B junction: JE
• C-B junction: JC

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BJT Structure

• There are two type of transistors:

▫ pnp
▫ npn

n-p-n p-n-p

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BJT Structure

Emitter: The most heavily doped of the three semiconductor regions of a BJT
Base: The base is thin and lightly doped compared to the other regions
Collector: The largest of the three semiconductor regions of a BJT

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BJT Structure

JE JB

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BJT Structure

• Bias

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BJT Operation

• In order to operate transistor in one of these regions, we have to supply dc

voltage to the npn or pnp transistor. Based on the polarity of the applied
dc voltage, the transistor operates in any one of these regions.

Operation Modes E-B junction (JE) C-B junction (JC)

Cutoff Reverse-biased Reverse-biased
Active Forward-biased Reverse-biased
Saturation Forward-biased Forward-biased
Reverse active Reverse-biased Forward-biased

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Active

• In the active mode:

▫ The emitter-base junction is forward biased
▫ The base-collector junction is reverse biased

n p

p n

n p
n-p-n p-n-p

Transistor npn Transistor pnp

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Active

• In the active mode:

▫ The emitter-base junction is forward biased
▫ The base-collector junction is reverse biased

n p

p n

n p
n-p-n p-n-p

Transistor npn Transistor pnp

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Active

• In the active mode:

▫ The emitter-base junction is forward biased
▫ The base-collector junction is reverse biased

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Active

IE=IC+IB

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Active

JE JC

- + - +

IE=IC+IB
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BJT Parameters

α: Alpha-dc
β: Beta-dc

Relationship between α and β, IE and IB ???

I E = I B (1 + ) = 
(1 + )

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BJT Circuit Analysis

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BJT Circuit Analysis

Example: Determine IB, IC, IE, VBE, VCE, and VCB in

the circuit. The transistor has a βDC=150.

VBE=0.7 (V)

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BJT Operation

Collector Characteristic Curves

Active: Opetationg range of the amplifier.

Cutoff: The amplifier is basically off. There is voltage, but little current.
Saturation: The amplifier is full on. There is current, but little voltage.
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Cutoff

• In a BJT, cutoff is the condition in which there is no base current (IB=0), which
results in only an extremely small leakage current (ICEO) in the collector circuit.
For pratical work, this current is assumed to be zero.

In cutoff, neither the base-emitter junction, nor

the base-collector junction are forward-biased.

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Saturation

• In a BJT, saturationis the condition in which there is maximum collector

current. The saturation current is determined by the external circuit (VCC and
RC in this case) because the collector-emitter voltage is minimum (≈ 0.2 V)

In saturation, an increase of base current

has no effect on the collector circuit and
the relation IC= βDCIB is no longer valid.

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The BJT as a Switch

Switching Operation

A transistor used
to switch an LED
on and off.

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BJT Configuration

NPN
E C

UIn UOut
B

BC

E UOut
B

UIn C

CC

UOut

C
B

UIn E

EC

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BJT Configuration

Common-Collector Common-Emitter Common-Collector

Configuration Configuration Configuration
Common to both
the input and
B E C
output sides of the
configuration

Iin IE IB IB

Iout IC IC IE

Vin VEB VBE VBC

Vout
VCB VCE VEC

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SEE YOU NEXT TIME

9/25/2022