BUZ 384

SIPMOS ® Power Transistor

• N channel
• Enhancement mode
• FREDFET

Pin 1 Pin 2 Pin 3

G D S

Type VDS ID RDS(on) Package Ordering Code

BUZ 384 500 V 10.5 A 0.6 Ω TO-218 AA C67078-A3209-A2

Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage VDS 500 V
Drain-gate voltage VDGR
RGS = 20 kΩ 500
Continuous drain current ID A
TC = 25 °C 10.5
Pulsed drain current IDpuls
TC = 25 °C 42
Gate source voltage VGS ± 20 V
Power dissipation Ptot W
TC = 25 °C 125
Operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC ≤1 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Semiconductor Group 1 07/96

 BUZ 384

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C 500 - -
Gate threshold voltage VGS(th)
VGS=VDS, ID = 1 mA 2.1 3.5 4
Zero gate voltage drain current IDSS µA
VDS = 500 V, VGS = 0 V, Tj = 25 °C - 20 250
VDS = 500 V, VGS = 0 V, Tj = 125 °C - 100 1000
Gate-source leakage current IGSS nA
VGS = 20 V, VDS = 0 V - 10 100
Drain-Source on-resistance RDS(on) Ω
VGS = 10 V, ID = 6.5 A - 0.55 0.6

Semiconductor Group 2 07/96

 BUZ 384

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics
Transconductance gfs S
VDS≥ 2 * ID * RDS(on)max, ID = 6.5 A 2.7 6.7 -
Input capacitance Ciss pF
VGS = 0 V, VDS = 25 V, f = 1 MHz - 3800 4900
Output capacitance Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 250 400
Reverse transfer capacitance Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 100 170
Turn-on delay time td(on) ns
VDD = 30 V, VGS = 10 V, ID = 2.8 A
RGS = 50 Ω - 50 75
Rise time tr
VDD = 30 V, VGS = 10 V, ID = 2.8 A
RGS = 50 Ω - 80 120
Turn-off delay time td(off)
VDD = 30 V, VGS = 10 V, ID = 2.8 A
RGS = 50 Ω - 330 430
Fall time tf
VDD = 30 V, VGS = 10 V, ID = 2.8 A
RGS = 50 Ω - 110 140

Semiconductor Group 3 07/96

 BUZ 384

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Reverse Diode
Inverse diode continuous forward current IS A
TC = 25 °C - - 10.5
Inverse diode direct current,pulsed ISM
TC = 25 °C - - 42
Inverse diode forward voltage VSD V
VGS = 0 V, IF = 21 A - 1.3 1.7
Reverse recovery time trr ns
VR = 100 V, IF=lS, diF/dt = 100 A/µs - 180 250
Reverse recovery charge Qrr µC
VR = 100 V, IF=lS, diF/dt = 100 A/µs - 0.65 1.2

Semiconductor Group 4 07/96

 BUZ 384

Power dissipation Drain current

Ptot = ƒ(TC) ID = ƒ(TC)
parameter: VGS ≥ 10 V

130 11

W A

110
9
Ptot ID
100
8
90
7
80

70 6

60 5

50 4
40
3
30
2
20
1
10
0 0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC TC

Safe operating area Transient thermal impedance

ID = ƒ(VDS) Zth JC = ƒ(tp)
parameter: D = 0.01, TC = 25°C parameter: D = tp / T

10 2 10 1

t = 20.0µs
p
K/W
A
ID ZthJC
100 µs 10 0
D
/I

10 1
DS
=V
n)
(o
DS

1 ms
10 -1
R

D = 0.50
0.20
10 0 10 ms 0.10
0.05
10 -2
0.02
0.01
DC
single pulse
10 -1 10 -3
0 1 2 3 -7 -6 -5 -4 -3 -2 -1 0
10 10 10 V 10 10 10 10 10 10 10 10 s 10
VDS tp

Semiconductor Group 5 07/96

 BUZ 384

Typ. output characteristics Typ. drain-source on-resistance

ID = ƒ(VDS) RDS (on) = ƒ(ID)
parameter: tp = 80 µs parameter: VGS

24 l 1.8
Ptot = 125W a b c d e f
k i h
A j g
Ω
20 f VGS [V]
ID a 4.0 RDS (on)
1.4
18 b 4.5

e c 5.0
16 d 5.5 1.2
e 6.0
14
f 6.5 1.0
12 d g 7.0
h 7.5 g
0.8
10 i 8.0 h
i
c j 9.0 j
8 0.6 k
k 10.0 l

6 l 20.0
0.4
b
4
VGS [V] =
0.2 a b c d e f g h i j k l
2 a
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
0 0.0
0 4 8 12 16 20 24 V 30 0 4 8 12 16 A 22
VDS ID

Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 µs parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max VDS≥2 x ID x RDS(on)max

18 10

A S

ID gfs 8
14

7
12
6
10
5
8
4
6
3

4
2

2 1

0 0
0 1 2 3 4 5 6 7 8 V 10 0 2 4 6 8 10 12 A 16
VGS ID

Semiconductor Group 6 07/96

 BUZ 384

Drain-source on-resistance Gate threshold voltage

RDS (on) = ƒ(Tj ) VGS (th) = ƒ(Tj)
parameter: ID = 6.5 A, VGS = 10 V parameter: VGS = VDS, ID = 1 mA

1.8 4.6
V 98%
Ω 4.0
VGS(th) typ
RDS (on) 3.6
1.4

3.2
1.2
2.8
1.0
2.4 2%

0.8 98% 2.0

typ
1.6
0.6
1.2
0.4
0.8

0.2 0.4

0.0 0.0
-60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C 160
Tj Tj

Typ. capacitances Forward characteristics of reverse diode

C = f (VDS) IF = ƒ(VSD)
parameter:VGS = 0V, f = 1MHz parameter: Tj , tp = 80 µs

10 1 10 2

nF Ciss A
C IF

10 0 10 1

Coss

10 -1 10 0
Crss
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)

10 -2 10 -1
0 5 10 15 20 25 30 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VDS VSD

Semiconductor Group 7 07/96

 BUZ 384

Drain-source breakdown voltage Typ. gate charge

V(BR)DSS = ƒ(Tj ) VGS = ƒ(QGate)
parameter: ID puls = 14 A

16
600
V
V
580
V(BR)DSS570 VGS
12
560 0,2 VDS max 0,8 VDS max
550
10
540
530 8
520
510 6
500
490 4
480
470 2

460
450 0
-60 -20 20 60 100 °C 160 0 40 80 120 160 nC 220
Tj Q Gate

Semiconductor Group 8 07/96

 BUZ 384

Package Outlines
TO-218 AA
Dimension in mm

Semiconductor Group 9 07/96