BUZ 20

SIPMOS ® Power Transistor

• N channel
• Enhancement mode
• Avalanche-rated

Pin 1 Pin 2 Pin 3

G D S

Type VDS ID RDS(on) Package Ordering Code

BUZ 20 100 V 13.5 A 0.2 Ω TO-220 AB C67078-S1302-A2

Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
TC = 28 °C 13.5
Pulsed drain current IDpuls
TC = 25 °C 54
Avalanche current,limited by Tjmax IAR 13.5
Avalanche energy,periodic limited by Tjmax EAR 7.9 mJ
Avalanche energy, single pulse EAS
ID = 13.5 A, VDD = 25 V, RGS = 25 Ω
L = 486 µH, Tj = 25 °C 59
Gate source voltage VGS ± 20 V
Power dissipation Ptot W
TC = 25 °C 75
Operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC ≤ 1.67 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Semiconductor Group 1 07/96

 BUZ 20

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C 100 - -
Gate threshold voltage VGS(th)
VGS=VDS, ID = 1 mA 2.1 3 4
Zero gate voltage drain current IDSS µA
VDS = 100 V, VGS = 0 V, Tj = 25 °C - 0.1 1
VDS = 100 V, VGS = 0 V, Tj = 125 °C - 10 100
Gate-source leakage current IGSS nA
VGS = 20 V, VDS = 0 V - 10 100
Drain-Source on-resistance RDS(on) Ω
VGS = 10 V, ID = 8.5 A - 0.17 0.2

Semiconductor Group 2 07/96

 BUZ 20

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics
Transconductance gfs S
VDS≥ 2 * ID * RDS(on)max, ID = 8.5 A 3 4.7 -
Input capacitance Ciss pF
VGS = 0 V, VDS = 25 V, f = 1 MHz - 400 530
Output capacitance Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 120 180
Reverse transfer capacitance Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 70 105
Turn-on delay time td(on) ns
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 10 15
Rise time tr
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 45 70
Turn-off delay time td(off)
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 55 75
Fall time tf
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 40 55

Semiconductor Group 3 07/96

 BUZ 20

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Reverse Diode
Inverse diode continuous forward current IS A
TC = 25 °C - - 13.5
Inverse diode direct current,pulsed ISM
TC = 25 °C - - 54
Inverse diode forward voltage VSD V
VGS = 0 V, IF = 27 A - 1.4 1.6
Reverse recovery time trr ns
VR = 30 V, IF=lS, diF/dt = 100 A/µs - 170 -
Reverse recovery charge Qrr µC
VR = 30 V, IF=lS, diF/dt = 100 A/µs - 0.3 -

Semiconductor Group 4 07/96

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Power dissipation Drain current

Ptot = ƒ(TC) ID = ƒ(TC)
parameter: VGS ≥ 10 V

80 14

A
W 12

Ptot ID 11
60
10

9
50
8

40 7

6
30 5

4
20
3

2
10
1
0 0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC TC

Safe operating area Transient thermal impedance

ID = ƒ(VDS) Zth JC = ƒ(tp)
parameter: D = 0.01, TC = 25°C parameter: D = tp / T

10 2 10 1
t = 16.0µs
p
K/W
A I
D
/
DS

ID 100 µs ZthJC
V
10 0
=
n)
(o
DS

10 1 R
1 ms

10 -1
10 ms D = 0.50
0.20
10 0 0.10

DC 0.05
10 -2
0.02
0.01
single pulse

10 -1 10 -3
0 1 2 -7 -6 -5 -4 -3 -2 -1 0
10 10 V 10 10 10 10 10 10 10 10 s 10
VDS tp

Semiconductor Group 5 07/96

 BUZ 20

Typ. output characteristics Typ. drain-source on-resistance

ID = ƒ(VDS) RDS (on) = ƒ(ID)
parameter: tp = 80 µs parameter: VGS

30 0.65
Ptot = 75W
A l Ω a b c d e f g h i j
k
26 0.55
VGS [V]
ID 24 a 4.0 RDS (on)
0.50
j b 4.5
22
c 5.0 0.45
20
d 5.5
0.40
18 i e 6.0

16 h
f 6.5 0.35
g 7.0
14 g h 7.5
0.30
12 i 8.0 0.25
f
j 9.0
10
e k 10.0 0.20
8 l 20.0 k
d 0.15
6
c 0.10
4 VGS [V] =
b a b c d e f g h i j k
2 0.05 4.0
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
a
0 0.00
0 4 8 12 16 20 V 26 0 4 8 12 16 20 24 A 30
VDS ID

Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 µs parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max VDS≥2 x ID x RDS(on)max

24 6.0

A S

20 5.0
ID gfs
18 4.5

16 4.0

14 3.5

12 3.0

10 2.5

8 2.0

6 1.5

4 1.0

2 0.5
0 0.0
0 1 2 3 4 5 6 7 8 V 10 0 4 8 12 16 A 22
VGS ID

Semiconductor Group 6 07/96

 BUZ 20

Drain-source on-resistance Gate threshold voltage

RDS (on) = ƒ(Tj ) VGS (th) = ƒ(Tj)
parameter: ID = 8.5 A, VGS = 10 V parameter: VGS = VDS, ID = 1 mA

0.65 4.6
Ω V 98%
4.0
0.55
RDS (on) VGS(th)
0.50 3.6

0.45 3.2 typ

0.40 2.8

0.35 2.4 2%
0.30
98% 2.0
0.25 typ
1.6
0.20
1.2
0.15
0.8
0.10
0.4
0.05
0.00 0.0
-60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C 160
Tj Tj

Typ. capacitances Forward characteristics of reverse diode

C = f (VDS) IF = ƒ(VSD)
parameter:VGS = 0V, f = 1MHz parameter: Tj , tp = 80 µs

10 1 10 2

nF A
C IF

10 0 10 1

Ciss

10 -1 Coss 10 0
Tj = 25 °C typ
Crss
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)

10 -2 10 -1
0 5 10 15 20 25 30 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VDS VSD

Semiconductor Group 7 07/96

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Avalanche energy EAS = ƒ(Tj ) Typ. gate charge

parameter: ID = 13.5 A, VDD = 25 V VGS = ƒ(QGate)
RGS = 25 Ω, L = 486 µH parameter: ID puls = 15 A

60 16

mJ
V
50
EAS VGS
45 12
0,2 VDS max 0,8 VDS max
40
10
35

30 8

25
6
20

15 4

10
2
5
0 0
20 40 60 80 100 120 °C 160 0 10 20 30 40 50 nC 70
Tj Q Gate

Drain-source breakdown voltage

V(BR)DSS = ƒ(Tj )

120
V
116
V(BR)DSS114
112
110
108
106
104
102
100
98
96
94
92
90
-60 -20 20 60 100 °C 160
Tj

Semiconductor Group 8 07/96

 BUZ 20

Package Outlines
TO-220 AB
Dimension in mm

Semiconductor Group 9 07/96