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EE 305
Chapter 4
The Semiconductor in Equilibrium
Outline
The main topics of this chapter is to find (under equilibrium, applied voltage is zero):
1. The number of free electrons at any energy level, n(E), in the conduction band
2. The number of holes at any energy level, p(E), in the valence band
3. Total number of free electrons in the conduction band (n) and the total number of holes in the valence band (p)
a. Intrinsic semiconductor
b. Extrinsic semiconductor
Slide 1
To simplify and make it brief and easy for you:
1. Chapter 3:
𝐶𝑜𝑛𝑑𝑢𝑐𝑡𝑖𝑜𝑛 𝐵𝑎𝑛𝑑
𝐸𝐶
𝐸𝑔
𝐸𝐹𝑖
𝐸𝑉
𝑉𝑎𝑙𝑒𝑛𝑐𝑒 𝐵𝑎𝑛𝑑
Slide 2
Chapter 3
b. Density of states:
∗ × 2𝑚∗ (𝐸−𝐸 )
𝑚𝑛 1
𝑛 𝐶
Calculate 𝑔𝐶 𝐸 = unit:
2 ħ3 𝐽.𝑚3
∗ × 2𝑚∗ (𝐸 −𝐸)
𝑚𝑝 𝑝 𝑉 1
Calculate 𝑔𝑉 𝐸 = unit:
2 ħ3 𝐽.𝑚3
Slide 3
Chapter 3
c. Intrinsic and Extrinsic:
- If 𝑛 = 𝑝 ; it is intrinsic
- If 𝑛 ≠ 𝑝 ; it is Extrinsic
1
of occupied states; we should calculate 𝑓 𝐸 = 𝐸−𝐸𝑓
1+exp( )
𝑘𝑇
1
probability of having holes; we should calculate 1−𝑓 𝐸 =1− 𝐸−𝐸𝑓
1+exp( 𝑘𝑇 )
Slide 5
Chapter 4
a. Number of free electrons at Energy Level E in conduction band; n(E):
1
𝑛 𝐸 = 𝑔𝑐 (𝐸) × 𝑓 𝐸 unit:
𝐽.𝑚3
3
∗
𝑚𝑛 𝑘𝑇 2
Where: 𝑁𝐶 = 2 2𝜋ħ2
; effective density of states in Conduction band
Slide 6
Chapter 4
c. Number of Holes at Energy Level E in Valence band; p(E):
1
𝑝 𝐸 = 𝑔𝑣 (𝐸) × 1 − 𝑓 𝐸 unit:
𝐽.𝑚3
3
∗
𝑚𝑝 𝑘𝑇 2
Where: 𝑁𝑉 = 2 2𝜋ħ2
; effective density of states in Valence band
Slide 7
Chapter 4
e. Intrinsic Semiconductor:
𝑛0 = 𝑝0 = 𝑛𝑖
𝑛𝑖2 = 𝑛0 × 𝑝0
1 −6 1
𝑛𝑖 unit: × 10 =
𝑚3 𝑐𝑚3
Slide 8
Find ni using the graph
Chapter 4
Slide 9
Chapter 4
f. Extrinsic Semiconductor: If 𝑛 ≠ 𝑝
𝐶𝑜𝑛𝑑𝑢𝑐𝑡𝑖𝑜𝑛 𝐵𝑎𝑛𝑑
𝐸𝐶
𝐸𝑔
𝐸𝐹𝑖
𝐸𝑉
𝑉𝑎𝑙𝑒𝑛𝑐𝑒 𝐵𝑎𝑛𝑑
Slide
10
Chapter 4
f. Extrinsic Semiconductor: If 𝑛 ≠ 𝑝 𝑛𝑖2 𝑛𝑖2
𝑛𝑜 × 𝑝0 = 𝑛𝑖2 𝑛0 = 𝑝0 =
𝑝0 𝑛0
− 𝐸𝐹 −𝐸𝑣 − 𝐸𝐶 −𝐸𝐹
𝑝𝑜 = 𝑁𝑉 𝑒 𝐾𝑇 𝑛𝑜 = 𝑁𝐶 𝑒 𝐾𝑇
𝑝 𝑛
𝐸𝐹 = 𝐸𝑖 − 𝐾𝑇𝑙𝑛 𝐸𝐹 = 𝐸𝑖 + 𝐾𝑇𝑙𝑛
𝑛𝑖 𝑛𝑖
𝑝0 − 𝑛0 + 𝑁𝑑 − 𝑁𝑎 = 0
𝐼𝑓 𝑁𝐴 ≫ 𝑁𝐷 : 𝐼𝑓 𝑁𝐷 ≫ 𝑁𝐴 :
𝑝0 = 𝑁𝐴 𝑛0 = 𝑁𝐷
Slide
11
Example 1
Consider an intrinsic silicon semiconductor at room temperature with the energy band diagram shown below. The
energy level 𝐸1 is located at energy 𝑘𝑇 above the lowest energy in the conduction band.
EFi
Solution: a.
Slide
12
Example 1
Solution: b.
Probability that a state with energy, 𝐸 = 𝐸1 , is occupied 𝑓(𝐸)
1
𝐸 = 𝐸1 𝑓 𝐸1 = 𝐸1 −𝐸𝑓 EFi
1+exp( )
𝑘𝑇
For intrinsic semiconductor, the Fermi level is located in the middle of the gap.
𝐸𝑔
𝐸𝑓 is located below 𝐸𝑐 by 2 = 0.55 𝑒𝑉
Slide
13
𝑓 𝐸1 = 2 × 10−10
Example 1
1
𝑛 𝐸1 = 𝑔𝑐 𝐸1 × 𝑓 𝐸1 = 1.65 × 1036
𝐽. 𝑚3
1
If we need to convert the unit to
𝑒𝑉.𝑐𝑚3
1 1
𝑛 𝐸1 = 1.65 × 1036 × 1.6 × 10−19 × 10−6 = 2.65 × 1011
𝐽.𝑚3 𝑒𝑉.𝑐𝑚3
Slide
14
Example 2
So let's look at an example to calculate the concentration of intrinsic Silicon at room
Conduction band
𝐸𝐶
temperature (𝑇 = 300 𝐾).
𝐸𝑔
For Silicon, we can calculate 𝑁𝑐 (value of constant given in the formula sheet):
3 3
∗
𝑚𝑛 𝑘𝑇 2 1.18 × 9.1 × 10−311.38 × 10−23 × 300 2
𝑁𝑐 = 2 =2 = 3.24 × 1025 m−3 = 3.24 × 1019 cm−3
2𝜋ħ2 2𝜋 1.055 × 10−34 2
For Silicon, we can calculate 𝑁𝑣 (value of constant given in the formula sheet):
3/2 3/2
𝑚𝑝∗ 𝑘𝑇 (0.8 × 9.1 × 10−31 )(1.38 × 10−23 × 300)
𝑁𝑣 = 2 =2 = 1.81 × 1025 m−3 = 1.81 × 1019 cm−3
2𝜋ħ2 2𝜋 1.055 × 10−34 2
Slide
15
Example 2
Slide
16
Example 3
Let's say that the Fermi level is 0.2 eV below the bottom of the conduction band:
𝐸𝑐 − 𝐸𝐹 = 0.2 𝑒𝑉
If we put in numbers using the below expression, we can find the electron
concentration:
3
∗
𝑚𝑛 𝑘𝑇 2 −0.2 eV
𝑁𝐶 = 2 = 3.24 × 1019 cm−3 𝒏𝟎 = 3.24 × 1019 exp = 1.41 × 1016 cm−3
2𝜋ħ2 0.026 eV
Slide
17
Example 3
If we put in numbers using the below expression, we can find the hole concentration.
3
∗
𝑚𝑝 𝑘𝑇 2
𝑁𝑉 = 2 = 1.81 × 1019 cm−3
2𝜋ħ2
−𝟎. 𝟗 𝐞𝐕
Slide 𝒑𝟎 = 𝟏. 𝟖𝟏 × 𝟏𝟎𝟏𝟗 𝐞𝐱𝐩 = 𝟏. 𝟔𝟖 × 𝟏𝟎𝟒 𝐜𝐦−𝟑
18 𝟎. 𝟎𝟐𝟔 𝐞𝐕
Example 4
Solution:
a) NA=0, no acceptors added to the semiconductor, only donors.
o The semiconductor is n-type. So the number of electrons will be more than the number of holes. Both
electrons and holes exist in the semiconductor.
o In this case, Electrons are called majority carriers. Holes are called minority carriers.
Slide
19
Example 4
Solution:
b) Donors ND are more than acceptor NA.
• The semiconductor is also n-type.
• So the number of electrons will be more than the number of holes.
• Electrons are majority carriers
• 𝑛~𝑁𝐷 − 𝑁𝐴 = 5 × 1015 − 2 × 1015 = 3 × 1015 cm−3
Slide
20