EXPERIMENT NO.

1
JUNCTION DIODE CHARACTERISTICS

I. OBJECTIVE:

To test a junction diode and measure the effects when it is on forward or reverse bias
condition.

II. DISCUSSION:

The standard symbol for a semiconductor diode is an arrow and bar showing the direction
of current. The arrow is the P-side and the bar is the N-side. The arrow and bar are generally
marked on the diode. To determine the state of the diode, simply think of it initially as a resistor,
and find the polarity of the voltage across it and the direction of conventional current through it. If
the voltage across it has forward-bias polarity and the current has a direction has matches the
arrow in the symbol, the diode is conducting.

For the most applications, simply the threshold voltage in the forward-bias region and an
open-circuit for applied voltages can define the characteristics of a diode less than the threshold
value.

III. MATERIALS:

1- Variable power supply

1- Digital Tester
1- 2Watt, 200 ohms resistor
1- 1N4001 silicon diode
IV. PROCEDURE:
R
A

Fig. 1.1 Measuring the effect of forward bias on current flow in diode

1. Construct the circuit shown. Set the supply letting the voltage V to be. Volt. Increase the
voltage from 0.1 Volt steps to maximum of 0.8 Volts. Measure and record the current, if
any, in Table 1.2. Also compute for the forward resistance of the diode.
2. Reverse the diode. Like on forward biased circuit, measure the current and record, if any
with the power supply varying in steps from 0 to 40 Volts. Again for each conditions,
compute for the reverse resistance of the diode.

0 0 0 0Ω

189 nA 529100.52 Ω 37.037 nA 5000000000 Ω

1.487 uA 134498.99 Ω 42.1 nA 237529691.21 Ω

10.122 uA 29638.41 Ω 46.896 nA 319856704.19 Ω

58.23 uA 6869.31 Ω 52.225 nA 382958353.27 Ω

217.48 uA 2,299.06 Ω 56.843 nA 439807891.91 Ω

501.402 uA 1196.64 Ω 62.172 nA 482532329.67 Ω

861.375 uA 812.65 Ω 66.791 nA 524022697.66 Ω

1.262 mA 633.91 Ω 72.475 nA 551914453.26 Ω

 3. Remove the diode from the circuit. Measure the forward and reverse resistance of this
diode. Record the result in Table 1.3. Compute the resistance ratio, r, of his diode.

V. QUESTIONS

1. Plot a graph of V versus I for both bias conditions of Table 1.2

FORWARD BIAS
 REVERSE BIAS

2. Under what condition will a junction diode turn on? Refer to

yourmeasurement in Table 1.2

Ans:

Since the diode we will use in this experiment is a

silicon junction diode. The diode will turn on when we meet the
condition of having a 0.7 voltage with a current flowing at
861.37 microamperes, based on the measured value on the table.
If the voltage is negative, it is in reversed bias; hence, it will not
turn on.
3. Explain how (a) forward-bias, (b) reverse-bias conditions may be
established.Referring to your experiment, explain also how the resulting
current is affected.
Ans:
Based on the experiment diagram, we can say that the diode is in
Forward Bias if the source's positive terminal (Cathode) is connected to the
p side of the diode and the negative (Anode) to the N side. In contrast, we
can say that a diode is reverse biased if the positive side of the source is
connected to the n side of the diode and the negative terminal to the p-side
of a diode.

4. What portion, at the volt-ampere characteristics curve of the

forward-biasdiode is linear.
Ans:
We know that a resistor is a linear element; therefore, the
relationship between voltage and current is also linear. However, the
relationship between current and voltage to the diode is non-linear.
However, by using ohms law and calculating the current and
resistance, we can create a graph of forward biased wherein the value
of voltage-ampere is aligned with each other. Hence, this will create a
linear graph of the forward-biased diode.

5. What is the effect of the DC resistance of the diode over this linear
portion?

Ans:
As observed from the graph, we can say that the current and voltage
are directly proportional to each other. However, since we are using silicon,
we can analyze that the voltage is stuck between 0.7 to 08 volts for it to
operate additionally, as the resistance reduces before the diode turns on. It is
because the resistance is inversely proportional to the current.
6. Compare the characteristics of silicon and a germanium diode and
determinewhich is preferred to use for practical application.

Ans:

A silicon diode is a semiconductor diode with positive and

negative charge polarity that only enables current to flow in one waIn
terms of reviving. Germanium diodes function similarly to Si diodes,
except that Germanium has a low forward voltage, resulting in a low
power loss and an efficient diode. The voltage level of a silicon diode is
0.7V, while that of a germanium diode is 0.3V. Furthermore, the leakage
current of a silicon diode is measured in nano amperes (nA), whereas the
leakage current of a germanium diode is measured in milliamperes (mA).

Moreover, both diode types are suitable depending on where we

will use them. However, silicon is much cheaper and can withstand
higher temperatures than Germanium. That is why silicon is preferred
over Germanium.

7. What is the significance, if any, of the resistance ration of a diode?

VI. SIMULATED DIAGRAMS

FOR TABLE 1.2 (FORWARD BIAS)

0 VOLTS

0.1 VOLTS
0.2 VOLTS

0.3 VOLTS
0.4 VOLTS

0.5 VOLTS
0.6 VOLTS

0.7 VOLTS
 0.8 VOLTS

TABLE 1.2 (REVERSE BIAS)

0 VOLTS 5 VOLTS
10 VOLTS 15 VOLTS

20 VOLTS 25 VOLTS
30 VOLTS 35 VOLTS

40 VOLTS