LESHAN RADIO COMPANY, LTD.

20V P-Channel Enhancement-Mode MOSFET

VDS= -20V LP3443LT1G

RDS(ON), Vgs@-4.5V, Ids@-4.7A = 60 mΩ
RDS(ON), Vgs@-2.5V, Ids@-1.0A = 100 mΩ 3
Features
Advanced trench process technology 1

High Density Cell Design For Ultra Low On-Resistance 2

we declare that the material of product SOT– 23 (TO–236AB)

compliance with RoHS requirements.

3 D
▼ Simple Drive Requirement
▼ Small Package Outline
G
▼ Surface Mount Device 1
S
2

ORDERING INFORMATION
Device Marking Shipping
LP3443LT1G P34 3000/Tape&Reel

LP3443LT3G P34 10000/Tape&Reel

Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS -20
V
Gate-Source Voltage VGS ±12
Continuous Drain Current ID -4.7
A
Pulsed Drain Current 1) IDM -20
o
TA = 25 C 1.1
Maximum Power Dissipation PD W
o
TA = 75 C 0.7
o
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C
Junction-to-Case Thermal Resistance RqJC o
2)
C/W
Junction-to-Ambient Thermal Resistance (PCB mounted) RqJA 110
Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation
2. 1-in2 2oz Cu PCB board
3. Guaranteed by design; not subject to production testing

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 LESHAN RADIO COMPANY, LTD.

LP3443LT1G

ELECTRICAL CHARACTERISTICS

Parameter Symbol Test Condition Min Typ Max Unit

Static
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250uA -20 V
Drain-Source On-State Resistance RDS(on) VGS = -4.5V, ID = -4.7A 48.0 60.0
Drain-Source On-State Resistance RDS(on) VGS = -2.7V, ID = -3.8A 63.0 90.0 mΩ
Drain-Source On-State Resistance RDS(on) VGS = -2.5V, ID = -1.0A 65.0 100.0
Gate Threshold Voltage VGS(th) VDS =VGS, ID = -250uA -0.6 -0.85 -1.4 V
Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0V -1 uA
Gate Body Leakage IGSS VGS = ± 12V, VDS = 0V ±100 nA
Forward Transconductance gfs VDS = -10V, ID = -4.7A 8 S
3)
Dynamic
Total Gate Charge Qg 24 36
VDS = -10V, ID = -4.7A
Gate-Source Charge Qgs 18 nC
VGS = -4.5V
Gate-Drain Charge Qgd 2.7
Turn-On Delay Time td(on) 22 35
tr VDD = -10V, RD=10Ω
Turn-On Rise Time 35 55
ID = -1A, VGS = -4.5V ns
Turn-Off Delay Time td(off) RG = 6Ω 45 70
Turn-Off Fall Time tf 25 40
Source-Drain Diode
Max. Diode Forward Current IS -1.7 A
Diode Forward Voltage VSD IS = -1.7A, VGS = 0V -1.2 V
Note : Pulse test: pulse width <= 300us, duty cycle<= 2%

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 LESHAN RADIO COMPANY, LTD.

LP3443LT1G

SOT-23

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A Y14.5M,1982
L 2. CONTROLLING DIMENSION: INCH.

3
DIM INCHES MILLIMETERS
B S
1 2 MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
V G B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
C
K 0.0140 0.0285 0.35 0.69
D H J L 0.0350 0.0401 0.89 1.02
K
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60

0.037
0.037 0.95
0.95

0.079
2.0

0.035
0.9

0.031 inches
0.8 mm

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