Collector Base Emitter

Collector Base Emitter

NPN-BJT 𝐼𝐶
𝑛 𝑝 𝑛+
𝐼𝐸

𝑛 p 𝑛+
𝑉𝐶𝐶 Out 𝐼𝐵
𝑉𝐶𝐵 𝑉𝐵𝐸

C-B space B-E space

𝑁𝐷+ − 𝑁𝐴− 𝑅𝐿 C E
charge region charge region
𝐺𝑁𝐷 𝑁𝐷+ − 𝑁𝐴−
𝑊𝐶 𝑊𝐵 𝑊𝐸 B Collector Base Emitter
𝑊𝐶 𝑊𝐵 𝑊𝐸 𝑛 𝑝 𝑛+

𝑥 𝑅𝐵1 𝑅𝐵2 E-field E-field

0 𝑊
𝑁𝐵 −𝑋𝐶 𝑋𝐸
𝑥 𝑛𝑝 𝑥
𝑁𝐵 𝑝𝑛 𝑥
𝑉𝐶𝐶 𝐼𝐶 𝑝𝑛0
𝐸 𝑥 𝐼𝐸
𝐸 𝑥 𝑛𝑝0
𝒆− 𝑝𝑛0
𝑅𝐿 𝑝𝑛 𝑥
𝑛 𝑝 𝑛+
𝐺𝑁𝐷 𝑥
𝑥 C B E 2) electrons get swept
by the large E-field 3) Concentration 1) forward biased pn-junction:
holes get concentrations by
⇒ 𝑛𝑝 0 ≈ 0 gradient
𝐼𝐵 𝒆− 𝒆− 𝑉𝐸𝐵 ⇒ diffusion current
Shockley boundary conditions

𝐸𝐹0 𝐸𝐶 𝑅𝐵1 𝑅𝐵2 𝐸𝐹0 𝐸𝐹𝐸

𝐸𝐹𝑖 𝐸𝐹𝑖 simple circuit
𝐸𝑉
𝑉𝐵𝐶 minority carrier
𝐸𝑉
𝐸𝐹𝐶
space charge concentrations
Common-Emitter 𝐸𝐶 distribution (This graph explains the
thermal equilibrium circuit basics of the forward active
𝐼𝐸
Emitter Base Collector electric fields mode.
(calculation: see slides 20+ in EC) 𝐼𝐶
Emitter Base Collector due to biasing To determine the current
𝑉𝐶𝐶 𝐺𝑁𝐷 𝑝+ 𝑛 𝑝 amplification 𝛽, set 𝑉𝐵𝐶 = 0.
𝑝+ 𝑛 𝑝 Out This is just a convention
𝑉𝐸𝐵 𝐼𝐵 𝑉𝐵𝐶 band diagram everyone follows!)
E C 𝑅𝐿
B
𝑁𝐷+ − 𝑁𝐴− 𝑁𝐷+ − 𝑁𝐴− E-B space B-C space
charge region charge region
𝑊𝐸 𝑊𝐵 𝑊𝐶 𝑊𝐸 𝑊𝐵 𝑊𝐶
𝑁𝐵 𝑅𝐵1 𝑅𝐵2 Emitter Base Collector
𝑁𝐵
𝑝+ 𝑛 p
−𝑋𝐸 𝑋𝐶
𝑥 𝑥
0 𝑊 E-field E-field
𝑉𝐶𝐶 𝐼𝐶 𝐺𝑁𝐷
𝐼𝐸
𝑝𝑛 𝑥
holes
𝑛𝑝 𝑥
𝐸 𝑥 𝑝+ 𝑛 𝑝 𝑅𝐿 𝐸 𝑥 𝑛𝑝0
𝑝𝑛0
E B C 𝑛𝑝0
𝒆− 𝑛𝑝 𝑥
𝑥 𝐼𝐵 𝑥
𝒆− 𝐸𝐶
𝑅𝐵1 𝑅𝐵2
𝐸𝐹𝐶
𝐸𝐶 𝐸𝑉 based on the slides of the lecture
𝒆− 𝒆− 𝑉𝐵𝐶 „semiconductor devices“ by C. Bolognesi
𝐸𝐹𝑖 𝐸𝐹𝑖
𝐸𝐹0 𝐸𝐹0 compilation by Stefan Rickli
𝐸𝑉 𝐸𝐹𝐸
http://blogs.ethz.ch/ricklis
PNP-BJT 𝑉𝐸𝐵 Last major update: 20.09.2015
As always: If you have corrections or feedback/suggestions:
write me an email to ricklis@student.ethz.ch
I then try to incorporate your input and will re-upload the files.