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Sheet 4 Solutions NANENG 305

Q1)
(a) Silicon, 𝑚𝑛∗ = 1.08𝑚𝑜
∗ )3/2
4𝜋(2𝑚𝑛
𝑔𝑐 (𝐸) = √𝐸 − 𝐸𝑐
ℎ3
∗ )3/2
4𝜋(2𝑚𝑛 𝐸𝑐 +2𝑘𝑇
𝑔𝑐 = ∫𝐸𝑐 √𝐸 − 𝐸𝑐 ⋅ 𝑑𝐸
ℎ3

∗ )3/2 𝐸𝑐
4𝜋(2𝑚𝑛 2
= ⋅ 3 ⋅ (𝐸 − 𝐸𝑐 )3/2 |𝐸𝑐 + 2𝑘𝑇
ℎ3

∗ )3/2
4𝜋(2𝑚𝑛 2
= ⋅ 3 ⋅ (2𝑘𝑇)3/2
ℎ3
3/2
4𝜋[2(1.08)(9.11×10−31 )] 2
= (6.625×10−34 )3
⋅ 3 ⋅ (2𝑘𝑇)3/2

= (7.953 × 1055 )(2𝑘𝑇)3/2


(i) At 𝑇 = 300K, 𝑘𝑇 = 0.0259eV
= (0.0259)(1.6 × 10−19 )
= 4.144 × 10−21 J

Then 𝑔𝑐 = (7.953 × 1055 )[2(4.144 × 10−21 )]3/2


= 6.0 × 1025 m−3
or 𝑔𝑐 = 6.0 × 1019 cm−3
400
(ii) At 𝑇 = 400K, 𝑘𝑇 = (0.0259) (300)

= 0.034533eV
= (0.034533)(1.6 × 10−19 )
= 5.5253 × 10−21 J
Then
𝑔𝑐 = (7.953 × 1055 )[2(5.5253 × 10−21 )]3/2
= 9.239 × 1025 m−3
or 𝑔𝑐 = 9.24 × 1019 cm−3
Q2)

𝑔𝑐 (𝑚𝑛∗ )3/2 1.08 3/2


= = ( ) = 2.68
𝑔𝜐 (𝑚∗ )3/2 0.56
𝑝

Q3)
A)
1
𝑓(𝐸) = 𝐸−𝐸𝐹
1+𝑒𝑥𝑝( )
𝑘𝑇

1
(a) 𝐸 − 𝐸𝐹 = 𝑘𝑇, 𝑓(𝐸) = 1+𝑒 1 ⇒
𝑓(𝐸) = 0.269
1
(b) 𝐸 − 𝐸𝐹 = 5𝑘𝑇, 𝑓(𝐸) = 1+𝑒 5 ⇒
𝑓(𝐸) = 6.69 × 10−3
1
(c) 𝐸 − 𝐸𝐹 = 10𝑘𝑇, 𝑓(𝐸) = 1+𝑒 10 ⇒
𝑓(𝐸) = 4.54 × 10−5
B)
1
1 − 𝑓(𝐸) = 1 − 𝐸−𝐸𝐹
1+𝑒𝑥𝑝( )
𝑘𝑇

or
1
1 − 𝑓(𝐸) = 𝐸 −𝐸
1+𝑒𝑥𝑝( 𝐹 )
𝑘𝑇

(a) 𝐸𝐹 − 𝐸 = 𝑘𝑇, 1 − 𝑓(𝐸) = 0.269


(b) E F − E = 5kT , 1 − f (E ) = 6.69  10 −3
(c) 𝐸𝐹 − 𝐸 = 10𝑘𝑇, 1 − 𝑓(𝐸) = 4.54 × 10−5

Q4)
(a) For 𝐸 = 𝐸1
1 −(𝐸1 −𝐸𝐹 )
𝑓 (𝐸 ) = 𝐸1 −𝐸𝐹 ≅ 𝑒𝑥𝑝 [ ]Then
1+𝑒𝑥𝑝( ) 𝑘𝑇
𝑘𝑇

−0.30
𝑓(𝐸1 ) = 𝑒𝑥𝑝 (0.0259) = 9.32 × 10−6

For 𝐸 = 𝐸2 , 𝐸𝐹 − 𝐸2 = 1.12 − 0.30 = 0.82eV


1
1 − 𝑓(𝐸) = 1 − −0.82
1+𝑒𝑥𝑝( )
0.0259

−0.82 −0.82
1 − 𝑓(𝐸) ≅ 1 − [1 − 𝑒𝑥𝑝 (0.0259)] = 𝑒𝑥𝑝 (0.0259) = 1.78 × 10−14
Q5)
(a)
−(𝐸−𝐸𝐹 ) −(5.80−5.50)
𝑓𝐹 = 𝑒𝑥𝑝 [ ] = 𝑒𝑥𝑝 [ ]
𝑘𝑇 0.0259

= 9.32 × 10−6
700
(b) 𝑘𝑇 = (0.0259) (300) = 0.060433eV
−0.30
𝑓𝐹 = 𝑒𝑥𝑝 [0.060433] = 6.98 × 10−3

c)
−(𝐸𝐹 − 𝐸)
1 − 𝑓𝐹 ≅ 𝑒𝑥𝑝 [ ]
𝑘𝑇
−0.25
0.02 = 𝑒𝑥𝑝 [ ]
𝑘𝑇

+0.25 1
or 𝑒𝑥𝑝 [ ] = 0.02 = 50
𝑘𝑇
0.25
= 𝑙𝑛(50)
𝑘𝑇

0.25 𝑇
𝑘𝑇 = 𝑙𝑛(50) = 0.063906 = (0.0259) (300)

which yields 𝑇 = 740K


Q6)
−(𝐸−𝐸𝐹 )
(a) 𝑓𝐹 = 𝑒𝑥𝑝 [ ]
𝑘𝑇
−0.60
10−8 = 𝑒𝑥𝑝 [ ]
𝑘𝑇

or
0.60
kT
(
= ln 10 +8 )
0.60
𝑘𝑇 = 𝑙𝑛(108) = 0.032572eV

𝑇
0.032572 = (0.0259) (300)

so 𝑇 = 377K
−0.60
(b) 10−6 = 𝑒𝑥𝑝 [ ]
𝑘𝑇
0.60 +6 )
= 𝑙𝑛(10
𝑘𝑇
0.60
𝑘𝑇 = 𝑙𝑛(106) = 0.043429

𝑇
0.043429 = (0.0259) (300)

or 𝑇 = 503K
Q7)
(a) At 𝑇 = 200K,
200
𝑘𝑇 = (0.0259) ( ) = 0.017267eV 300
1
𝑓𝐹 = 0.05 = 𝐸−𝐸𝐹
1+𝑒𝑥𝑝( )
𝑘𝑇

𝐸−𝐸𝐹 1
𝑒𝑥𝑝 ( ) = 0.05 − 1 = 19
𝑘𝑇

𝐸 − 𝐸𝐹 = 𝑘𝑇 𝑙𝑛(19) = (0.017267) 𝑙𝑛(19) = 0.05084eV


By symmetry, for 𝑓𝐹 = 0.95,
𝐸 − 𝐸𝐹 = −0.05084eV
Then 𝛥𝐸 = 2(0.05084) = 0.1017eV
(b) 𝑇 = 400K, 𝑘𝑇 = 0.034533eV
For 𝑓𝐹 = 0.05, from part (a),
𝐸 − 𝐸𝐹 = 𝑘𝑇 𝑙𝑛(19) = (0.034533) 𝑙𝑛(19)
= 0.10168eV
Then 𝛥𝐸 = 2(0.10168) = 0.2034eV

Q8)
−𝐸𝑔
(a) 𝑛𝑖2 = 𝑁𝑐 𝑁𝜐 𝑒𝑥𝑝 ( 𝑘𝑇 )
𝑇 3 −1.12
(5 × 1011 )2 = (2.8 × 1019 )(1.04 × 1019 ) ( ) × 𝑒𝑥𝑝 [(0.0259)(𝑇 ]
300 ⁄300)

𝑇 3 −(1.12)(300)
2.5 × 1023 = (2.912 × 1038 ) (300) × 𝑒𝑥𝑝 [ (0.0259)(𝑇) ]

By trial and error, 𝑇 ≅ 367.5K


Q9)
200
At 𝑇 = 200K, 𝑘𝑇 = (0.0259) (300)

= 0.017267eV
400
At 𝑇 = 400K, 𝑘𝑇 = (0.0259) (300)

= 0.034533eV
2 400 3 −𝐸𝑔
𝑛𝑖2 (400) (7.70×1010 ) 17
(
300
) 𝑒𝑥𝑝[
0.034533
]
= = 3.025 × 10 = 200 3
× −𝐸𝑔
𝑛𝑖2 (200) (1.40×102 )2 ( ) 𝑒𝑥𝑝[ ]
300 0.017267
𝐸𝑔 𝐸𝑔
= 8 𝑒𝑥𝑝 [0.017267 − 0.034533]

3.025 × 1017 = 8 𝑒𝑥𝑝[𝐸𝑔 (57.9139 − 28.9578)]


3.025×1017
𝐸𝑔 (28.9561) = 𝑙𝑛 ( ) = 38.1714
8

𝐸𝑔 = 1.318eV
400 3 −1.318
(7.70 × 1010 )2 = 𝑁𝑐𝑜 𝑁𝜐𝑜 ( ) × 𝑒𝑥𝑝 ( )
300 0.034533

5.929 × 1021 = 𝑁𝑐𝑜 𝑁𝜐𝑜 (2.370)(2.658 × 10−17 )


𝑁𝑐𝑜 𝑁𝜐𝑜 = 9.41 × 1037 cm−6
Q10)

𝑚𝑝
3
(a) 𝐸𝐹𝑖 − 𝐸𝑚𝑖𝑑𝑔𝑎𝑝 = 4 𝑘𝑇 𝑙𝑛 (𝑚∗ )
𝑛
3 0.70
= 4 (0.0259) 𝑙𝑛 (1.21)

 −10.63 meV
3 0.75
(b) 𝐸𝐹𝑖 − 𝐸𝑚𝑖𝑑𝑔𝑎𝑝 = 4 (0.0259) 𝑙𝑛 (0.080)
⇒ +43.47meV

Q11)
𝑁
(a) 𝐸𝑐 − 𝐸𝐹 = 𝑘𝑇 𝑙𝑛 (𝑛 𝑐 )
𝑜
2.8×1019
= (0.0259) 𝑙𝑛 ( ) = 0.8436eV
2×105

𝐸𝐹 − 𝐸𝜐 = 𝐸𝑔 − (𝐸𝑐 − 𝐸𝐹 ) = 1.12 − 0.8436

𝐸𝐹 − 𝐸𝜐 = 0.2764eV
−0.27637
(b) 𝑝𝑜 = (1.04 × 1019 ) 𝑒𝑥𝑝 ( ) = 2.414 × 1014 cm−3
0.0259
(c) p-type
Q12)
(a) p-type
𝐸𝑔 1.12
(b) 𝐸𝐹 − 𝐸𝜐 = 4 = 4 = 0.28eV
−(𝐸𝐹 −𝐸𝜐 )
𝑝𝑜 = 𝑁𝜐 𝑒𝑥𝑝 [ ]
𝑘𝑇

−0.28
= (1.04 × 1019 ) 𝑒𝑥𝑝 [0.0259]

= 2.10 × 1014 cm−3


𝐸𝑐 − 𝐸𝐹 = 𝐸𝑔 − (𝐸𝐹 − 𝐸𝜐 )

= 1.12 − 0.28 = 0.84eV


−(𝐸𝑐 −𝐸𝐹 )
𝑛𝑜 = 𝑁𝑐 𝑒𝑥𝑝 [ ]
𝑘𝑇

−0.84
= (2.8 × 1019 ) 𝑒𝑥𝑝 [0.0259]

= 2.30 × 105 cm−3


Q13)
𝑁
(a) 𝐸𝐹 − 𝐸𝜐 = 𝑘𝑇 𝑙𝑛 ( 𝑝𝜐)
𝑜
1.04×1019
= (0.0259) 𝑙𝑛 ( )
5×1015

= 0.1979eV
(b) 𝐸𝑐 − 𝐸𝐹 = 𝐸𝑔 − (𝐸𝐹 − 𝐸𝜐 )
= 1.12 − 0.19788 = 0.92212eV
−0.92212
(c) 𝑛𝑜 = (2.8 × 1019 ) 𝑒𝑥𝑝 [ ]
0.0259
= 9.66 × 103 cm−3
(d) Holes
𝑝
(e) 𝐸𝐹𝑖 − 𝐸𝐹 = 𝑘𝑇 𝑙𝑛 ( 𝑛𝑜 )
𝑖
5×1015
= (0.0259) 𝑙𝑛 (1.5×1010)

= 0.3294eV

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