Sheet 7 NANENG 305

Part I Carrier diffusion

Q1)

Answer:
𝑑𝑛 5 × 1014 − 𝑛(0)
𝐽𝑛 = 𝑒𝐷𝑛 = 𝑒𝐷𝑛 ( )
𝑑𝑥 0.01 − 0

5 × 1014 − 𝑛(0)
0.19 = (1.6 × 10−19 )(25) ( )
0.010
(0.19)(0.010)
= 5 × 1014 − 𝑛(0)
(1.6 × 10−19 )(25)
𝑛(0) = 0.25 × 1014cm−3

Q2)
Answer
For electrons:
𝑑𝑛 𝑑
𝐽𝑛 = 𝑒𝐷𝑛 𝑑𝑥 = 𝑒𝐷𝑛 𝑑𝑥 [1015 𝑒 −𝑥/𝐿𝑛 ]

−𝑒𝐷𝑛 (1015 )𝑒 −𝑥/𝐿𝑛

= 𝐿𝑛

At 𝑥 = 0,
−(1.6×10−19 )(25)(1015 )
𝐽𝑛 = 2×10−3
= −2A/cm2

For holes:
𝑑𝑝 𝑑
𝐽𝑝 = −𝑒𝐷𝑝 𝑑𝑥 = −𝑒𝐷𝑝 𝑑𝑥 [5 × 1015 𝑒 +𝑥/𝐿𝑝 ]

−𝑒𝐷𝑝 (5×1015 )𝑒 +𝑥/𝐿𝑝

= 𝐿𝑝

For 𝑥 = 0,
−(1.6×10−19 )(10)(5×1015 )
𝐽𝑝 = 5×10−4
= −16A/cm2

𝐽𝑇𝑜𝑡𝑎𝑙 = 𝐽𝑛 (𝑥 = 0) + 𝐽𝑝 (𝑥 = 0)

= −2 + (−16) = −18A/cm2

Q3)

Answer
𝑑𝑛(𝑥)
(a) 𝐽 = 𝑒𝜇𝑛 𝑛(𝑥)𝛦 + 𝑒𝐷𝑛 𝑑𝑥
We have 𝜇𝑛 = 8000cm2/V-s, so that

𝐷𝑛 = (0.0259)(8000) = 207cm2/s
𝑑𝑛(𝑥)
100 = (1.6 × 10−19 )(8000)(12)𝑛(𝑥) + (1.6 × 10−19 )(207)
𝑑𝑥

𝑑𝑛(𝑥)
100 = (1.536 × 10−14 )𝑛(𝑥) + (3.312 × 10−17 ) 𝑑𝑥

−𝑥
𝑛(𝑥) = 𝐴 + 𝐵 𝑒𝑥𝑝 ( 𝑑 )

𝑑𝑛(𝑥) −𝐵 −𝑥
𝑑𝑥
= 𝑑
𝑒𝑥𝑝 ( 𝑑 )
 −𝑥 (3.312×10−17 ) −𝑥
100 = (1.536 × 10−14 ) [𝐴 + 𝐵 𝑒𝑥𝑝 ( 𝑑 )] − 𝑑
𝐵 𝑒𝑥𝑝 ( 𝑑 )

This equation is valid for all x, so

100 = (1.536 × 10−14 )𝐴

𝐴 = 6.51 × 1015
Also
−𝑥 (3.312×10−17 ) −𝑥
1.536 × 10−14 𝐵 𝑒𝑥𝑝 ( 𝑑 ) − 𝑑
𝐵 𝑒𝑥𝑝 ( 𝑑 ) = 0

𝑑 = 2.156 × 10−3 cm

At 𝑥 = 0, 𝑒𝜇𝑛 𝑛(0)𝛦 = 50

50 = (1.6 × 10−19 )(8000)(12)(𝐴 + 𝐵)

𝐵 = −3.255 × 1015
−𝑥
𝑛(𝑥) = 6.51 × 1015 − 3.255 × 1015 𝑒𝑥𝑝 ( 𝑑 )cm−3

(b)

At 𝑥 = 0, 𝑛(0) = 6.51 × 1015 − 3.255 × 1015 𝑛(0) = 3.26 × 1015cm−3

At 𝑥 = 50𝜇m,
−50
𝑛(50) = 6.51 × 1015 − 3.255 × 1015 𝑒𝑥𝑝 (21.56) 𝑛(50) = 6.19 × 1015cm−3

(c)

At 𝑥 = 50𝜇m,

𝐽𝑑𝑟𝑓 = 𝑒𝜇𝑛 𝑛(50)𝛦 = (1.6 × 10−19 )(8000)(6.19 × 1015 )(12)

𝐽𝑑𝑟𝑓 (𝑥 = 50) = 95.08A/cm2

𝐽𝑑𝑖𝑓𝑓 (𝑥 = 50) = 100 − 95.08

𝐽𝑑𝑖𝑓𝑓 (𝑥 = 50) = 4.92A/cm2

Q4)

𝑑𝑛 𝑥
(a) 𝐽𝑛 = 𝑒𝜇𝑛 𝑛𝛦 + 𝑒𝐷𝑛 𝑑𝑥 −80 = (1.6 × 10−19 )(1000)(1016 ) (1 − 𝐿 ) 𝛦 +
−1016
(1.6 × 10−19 )(25.9) ( )
𝐿
where 𝐿 = 10 × 10−4 = 10 cm −3
 𝑥
80 = (1.6) (𝐿 − 1) 𝛦 + 41.44
24.1
𝛦= 𝑥 V/cm
( −1)
𝐿

(b) For 𝐽𝑛 = −20A/cm2

𝑥
20 = (1.6) (𝐿 − 1) 𝛦 + 41.44
13.3
𝛦= 𝑥 V/cm
(1− )
𝐿

Part II carrier Generation and Recombination

Q5)

2
𝑛2 (1.5×1010 )
𝑛𝑜 = 𝑁𝑑 = 5 × 1015cm−3 𝑝𝑜 = 𝑁𝑖 = 5×1015
= 4.5 × 104cm−3
𝑑

(a) Minority carrier whole lifetime is a constant.

𝜏𝑝𝑡 = 𝜏𝑝0 = 2 × 10−7 s
𝑝 4.5×104
𝑅𝑝𝑜 = 𝜏 𝑜 = 2×10−7
= 2.25 × 1011cm−3s−1
𝑝0

𝑝𝑜 +𝛿𝑝 4.5×104 +1014

′
(b) 𝑅𝑝𝑜 = = = 5 × 1020cm−3s−1
𝜏𝑝0 2×10−7

Q6)

(a) Recombination rates are equal

𝑛𝑜 𝑝
𝜏
=𝜏𝑜
𝑛𝑂 𝑝𝑂

𝑛𝑜 = 𝑁𝑑 = 1016 cm−3
2
𝑛2 (1.5×1010 )
𝑝𝑜 = 𝑛𝑖 = 1016
= 2.25 × 104 cm−3
𝑜

1016 2.25×104
𝜏𝑛𝑂
= 20×10−6
, 𝜏𝑛𝑂 = 8.89 × 10+6s
 (b)
2.25×104
𝐺= 20×10−6
= 1.125 × 109 cm−3s−1
(c)

𝑅 = 𝐺 = 1.125 × 109 cm−3s−1

Part III Ambipolar Transport

Q7)

p-type material;

minority carriers are electrons

(a) 𝜇′ = 𝜇𝑛
From Figure 5.3, 𝜇𝑛 ≅ 1300cm2/V-s

𝑘𝑇
(b) 𝐷 ′ = 𝐷𝑛 = ( 𝑒 ) ⋅ 𝜇𝑛 = (0.0259)(1300)
= 33.67cm2/s

(c) 𝜏𝑛𝑡 = 𝜏𝑛0 = 10−7s

𝑝𝑜 = 𝑁𝑎 = 7 × 1015cm−3
2
𝑛2 (1.5×1010 )
𝑛𝑜 = 𝑁𝑖 = 7×1015
𝑎

= 3.21 × 104 cm−3

𝑛𝑜 𝑝
𝜏𝑛𝑡
= 𝜏𝑜
𝑝𝑡

3.214×104 7×1015
10−7
= 𝜏𝑝𝑡

so 𝜏𝑝𝑡 = 2.18 × 104 s

Q8)

(a) For 0 ≤ 𝑡 ≤ 10−6 s,

𝛿𝑛 = 𝛿𝑝 = 𝑔′ 𝜏𝑝0 (1 − 𝑒 −𝑡/𝜏𝑝0 )

= (4 × 1021 )(5 × 10−8 )(1 − 𝑒 −𝑡/𝜏𝑝0 )

= (2 × 1014 )(1 − 𝑒 −𝑡/𝜏𝑝0 ) cm−3

At 𝑡 = 10−6 s,
−6 /5×10−8
𝛿𝑝(10−6 ) = (2 × 1014 )(1 − 𝑒 −10 )

= 2 × 1014cm−3

Then for 𝑡 ≥ 10−6s,

−6 )/𝜏
𝛿𝑝 = (2 × 1014 )𝑒 −(𝑡−10 𝑝0 cm−3

(b) 𝑛𝑜 = 5 × 1015cm−3
𝜎 = 𝑒𝜇𝑛 𝑛𝑜 + 𝑒(𝜇𝑛 + 𝜇𝑝 )𝛿𝑝

For 0 ≤ 𝑡 ≤ 10−6s,

𝜎 = (1.6 × 10−19 )(7500)(5 × 1015 ) + (1.6 × 10−19 )(7500 + 310) ×

(2 × 1014 )(1 − 𝑒 −𝑡/𝜏𝑝0 ) = 6.0 + 0.250(1 − 𝑒 −𝑡/𝜏𝑝0 ) (𝛺 -cm)−1

For 𝑡 ≥ 10−6s,
−6 )/𝜏
𝜎 = 6.0 + 0.250𝑒 −(𝑡−10 𝑝0 (𝛺 -cm)−1
Q9)

𝑛𝑜 = 𝑁𝑑 − 𝑁𝑎 = 8 × 1015 − 2 × 1015 = 6 × 1015 cm−3

2
𝑛2 (1.8×106 )
𝑝𝑜 = 𝑛𝑖 = 6×1015
= 5.4 × 10−4cm−3
𝑜

𝑝 5.4×10−4
(a) 𝑅𝑜 = 𝜏 𝑜 ⇒ 4 × 104 = 𝜏𝑝0
𝑝0
so 𝜏𝑝0 = 1.35 × 10−8s

(b) 𝛿𝑝 = 𝑔′ 𝜏𝑝0 = (2 × 1021 )(1.35 × 10−8 )

= 2.7 × 1013 cm−3

(c) 𝜏 = 𝜏𝑝0 = 1.35 × 10−8 s

Q10)

(a) p-type; 𝑝𝑝𝑂 = 1014cm−3

and
2
𝑛2 (1.5×1010 )
𝑛𝑝𝑂 = 𝑝 𝑖 = 1014
= 2.25 × 106 cm−3
𝑝𝑂

(b) Excess minority carrier concentration

𝛿𝑛 = 𝑛𝑝 − 𝑛𝑝𝑂

At 𝑥 = 0, 𝑛𝑝 = 0 so that

𝛿𝑛(0) = 0 − 𝑛𝑝𝑂 = −2.25 × 106 cm−3

(c) For the one-dimensional case,

𝑑 2 (𝛿𝑛) 𝛿𝑛
𝐷𝑛 𝑑𝑥 2
−𝜏 =0
𝑛𝑂

or
𝑑 2 (𝛿𝑛) 𝛿𝑛
𝑑𝑥 2
− 𝐿2 = 0 where 𝐿2𝑛 = 𝐷𝑛 𝜏𝑛𝑂
𝑛
 −𝑥 +𝑥
𝛿𝑛 = 𝐴 𝑒𝑥𝑝 ( 𝐿 ) + 𝐵 𝑒𝑥𝑝 ( 𝐿 )
𝑛 𝑛

For 𝑥 → ∞, n remains finite, so B = 0 .

−𝑥
𝛿𝑛 = −𝑛𝑝𝑂 𝑒𝑥𝑝 ( 𝐿 )
𝑛

Q11)

p-type so the minority carriers are electrons

𝛿𝑛 𝜕(𝛿𝑛)
𝐷𝑛 𝛻 2 (𝛿𝑛) + 𝜇𝑛 𝛦 • 𝛻(𝛿𝑛) + 𝑔′ − 𝜏 = 𝜕𝑡
𝑛𝑂

Uniform illumination means that

𝛻(𝛿𝑛) = 𝛻 2 (𝛿𝑛) = 0. For 𝜏𝑛𝑂 = ∞, we are

left with
𝑑(𝛿𝑛)
= 𝑔′ which gives 𝛿𝑛 = 𝑔′ 𝑡 + 𝐶1
𝑑𝑡

For 𝑡 ≤ 0, 𝛿𝑛 = 0 ⇒ 𝐶1 = 0

Then

𝛿𝑛 = 𝐺𝑜′ 𝑡 for 0 ≤ 𝑡 ≤ 𝑇
𝑑(𝛿𝑛)
For 𝑡 > 𝑇, 𝑔′ = 0 so that 𝑑𝑡
=0

And

𝛿𝑛 = 𝐺𝑜′ 𝑇 (no recombination)

Q12)

𝑉 8
𝛦0 = = = 20V/cm
𝐿 0.4

𝑑 0.25
𝜇𝑝 = = (20)(32×10−6 )
𝛦0 𝑡0

= 390.6cm2/V-s
2
(𝜇𝑝 𝛦0 ) (𝛥𝑡)2
𝐷𝑝 =
16𝑡0

2
[(390.6)(20)]2 (9.35×10−6 )
=
16(32×10−6 )

𝐷𝑝 = 10.42cm2/s

We find
𝐷𝑝 10.42
𝜇𝑝
= 390.6 = 0.02668V

This value is very close to 0.0259 for

𝑇 = 300K.