Sheet 6 NANENG 305

Q1)
𝜎 = 𝑒𝜇𝑝 𝑁𝑎
𝜎 1.80
or 𝑁𝑎 = 𝑒𝜇 = (1.6×10−19 )(380) = 2.96 × 1016 cm−3
𝑝

Q2)
(a) 𝜎 = 𝑒𝜇𝑛 𝑁𝑑
10 = (1.6 × 10−19 )𝜇𝑛 𝑁𝑑
From Figure 5.3, for 𝑁𝑑 = 6 × 1016 cm−3 we find 𝜇𝑛 ≅ 1050cm2/V-s which
gives
𝜎 = (1.6 × 10−19 )(1050)(6 × 1016 )
= 10.08 (𝛺 -cm)−1
1
(b) 𝜌 = 𝑒𝜇
𝑝 𝑁𝑎
1
0.20 = (1.6×10−19 )𝜇
𝑝 𝑁𝑎

From Figure 5.3, for 𝑁𝑎 = 1017 cm−3 we find 𝜇𝑝 ≅ 320cm2/V-s which gives
1
𝜌 = (1.6×10−19 )(320)(1017) = 0.195𝛺 -cm
Q3)
𝜌𝐿 𝐿 𝐿
𝑅= = 𝜎𝐴 = (𝑒𝜇
𝐴 𝑛 𝑁𝑑 )𝐴

𝐿
or 𝜇𝑛 = (𝑒𝑁
𝑑 )𝑅𝐴

2.5
= (1.6×10−19 )(2×1015 )(70)(0.1) = 1116cm2/V-s

Q4)
(a) 𝑛𝑜 = 𝑁𝑑 = 1016 cm−3
and
2
𝑛2 (1.8×106 )
𝑝𝑜 = 𝑛𝑖 = = 3.24 × 10−4 cm−3
𝑜 1016

(b)
𝐽 = 𝑒𝜇𝑛 𝑛𝑜 𝛦

For GaAs doped at ,

N d = 1016 cm−3

 n  7500 cm2/V-s
 Then
𝐽 = (1.6 × 10−19 )(7500)(1016 )(10)
or
𝐽 = 120A/cm2
c) (i) 𝑝𝑜 = 𝑁𝑎 = 1016 cm−3
𝑛2
𝑛𝑜 = 𝑝𝑖 = 3.24 × 10−4 cm−3
𝑜

(ii) For GaAs doped at 𝑁𝑎 = 1016 cm−3,

𝜇𝑝 ≅ 310cm2/V-s

𝐽 = 𝑒𝜇𝑝 𝑝𝑜 𝛦 = (1.6 × 10−19 )(310)(1016 )(10)

𝐽 = 4.96A/cm2
Q5)
(a) 𝑉 = 𝐼𝑅 ⇒ 10 = (0.1)𝑅
𝑅 = 100𝛺
(b)
𝐿 𝐿
𝑅= ⇒𝜎=
𝜎𝐴 𝑅𝐴

or
10−3
𝜎 = (100)(10−3 ) = 0.01 (𝛺 -cm)−1

c) 𝜎 ≅ 𝑒𝜇𝑛 𝑁𝑑
0.01 = (1.6 × 10−19 )(1350)𝑁𝑑
𝑁𝑑 = 4.63 × 1013 cm−3
d) 𝜎 ≅ 𝑒𝜇𝑝 𝑝𝑜
0.01 = (1.6 × 10−19 )(480)𝑝𝑜
𝑝𝑜 = 1.30 × 1014 cm−3 = 𝑁𝑎 − 𝑁𝑑
𝑁𝑎 = 1.30 × 1014 + 1015 = 1.13 × 1015 cm−3
Note: For the doping concentrations obtained, the assumed mobility values are
valid.
Q6)
(a) For 𝑁𝑑 = 2 × 1015 cm−3, then
𝜇𝑛 ≅ 8000cm 2 /V-s
 𝑉 5
𝑅= = 25×10−3 = 200𝛺
𝐼
𝐿
𝑅 = (𝑒𝜇
𝑛 𝑁𝑑 )𝐴

or 𝐿 = (𝑒𝜇𝑛 𝑁𝑑 )𝑅𝐴
= (1.6 × 10−19 )(8000)(2 × 1015 )(200)(5 × 10−5 )
= 0.0256cm
𝐼
(b) 𝐽 = 𝐴 = 𝑒𝑛𝑜 𝜐𝑑
𝐼
or 𝜐𝑑 = 𝐴(𝑒𝑛
𝑜)

25×10−3
= (5×10−5 )(1.6×10−19)(2×1015)

= 1.56 × 106 cm/s

(c) 𝐼 = (𝑒𝑛𝑜 𝜐𝑑 )𝐴 = (1.6 × 10−19 )(2 × 1015 )(5 × 106 )(5 × 10−5 ) = 0.080A
𝐼 = 80mA

Q7)
1 1
𝜌= =
𝑒𝜇𝑛 𝑛𝑜 + 𝑒𝜇𝑝 𝑝𝑜 𝑒(𝜇𝑛 + 𝜇𝑝 )𝑛𝑖

(a) 𝑁𝑎 = 𝑁𝑑 = 1014 cm−3

⇒ 𝜇𝑛 ≅ 1350cm2/V-s
𝜇𝑝 ≅ 480cm2/V-s
1
𝜌 = (1.6×10−19 )(1350+480)(1.5×1010 )

= 2.28 × 105 𝛺 -cm

(b) 𝑁𝑎 = 𝑁𝑑 = 1016 cm−3
⇒ 𝜇𝑛 ≅ 1250cm2/V-s
𝜇𝑝 ≅ 410cm2/V-s
1
𝜌 = (1.6×10−19 )(1250+410)(1.5×1010 )

= 2.51 × 105 𝛺 -cm

(c) 𝑁𝑎 = 𝑁𝑑 = 1018 cm−3
⇒ 𝜇𝑛 ≅ 290cm2/V-s
𝜇𝑝 ≅ 130cm2/V-s
1
𝜌 = (1.6×10−19 )(290+130)(1.5×1010 ) = 9.92 × 105 𝛺 -cm
Q8)
𝑉 2
(a) 𝛦 = 𝐿 = 150×10−4 = 133.3V/cm
(b) 𝜎(𝑥) = 𝑒𝜇𝑛 𝑁𝑑 (𝑥)
1 𝑇 𝑥
𝜎𝑎𝑣𝑔 = 𝑒𝜇𝑛 ⋅ 𝑇 ∫0 (2 × 1016 ) (1 − 1.111𝑇) 𝑑𝑥

𝑒𝜇𝑛 (2×1016 ) 𝑥2 𝑇
= [𝑥 − 2(1.111𝑇)] |0
𝑇

𝑒𝜇𝑛 (2×1016 ) 𝑇2
= [𝑇 − 2(1.111𝑇)]
𝑇

= 𝑒𝜇𝑛 (2 × 1016 )(0.55)

= (1.6 × 10−19 )(750)(2 × 1016 )(0.55)
𝜎𝑎𝑣𝑔 = 1.32 (𝛺 -cm)−1
𝜎𝑎𝑣𝑔 𝐴 (1.32)(7.5×10−4 )(10−4 )
(c) 𝐼 = 𝐿 ⋅ 𝑉 = ⋅ 2 = 1.32 × 10−5 A
150×10−4
or 𝐼 = 13.2𝜇A
(d) Top surface;
𝜎 = (1.6 × 10−19 )(750)(2 × 1016 )
= 2.4 (𝛺 -cm)−1
𝐽 = 𝜎𝛦 = (2.4)(133.3) = 320A/cm2
Bottom surface:
𝜎 = (1.6 × 10−19 )(750)(2 × 1015 )
= 0.24 (𝛺 -cm)−1
𝐽 = 𝜎𝛦 = (0.24)(133.3 = 32)A/cm2
Q9)
(a) n-type: 𝑛𝑜 = 𝑁𝑑 = 5 × 1016 cm−3
2
𝑛2 (1.5×1010 )
𝑝𝑜 = 𝑛𝑖 =
𝑜 5×1016

= 4.5 × 103 cm−3

p-type: 𝑝𝑜 = 𝑁𝑎 = 2 × 1016 cm−3
2
(1.5×1010 )
𝑛𝑜 = = 1.125 × 104 cm−3
2×1016

compensated: 𝑛𝑜 = 𝑁𝑑 − 𝑁𝑎
= 5 × 1016 − 2 × 1016
= 3 × 1016 cm−3
 2
(1.5×1010 )
𝑝𝑜 = = 7.5 × 103 cm−3
3×1016

(b) From Figure 5.3,

n-type: 𝜇𝑛 ≅ 1100cm2/V-s
p-type: 𝜇𝑝 ≅ 400cm2/V-s

compensated: 𝜇𝑛 ≅ 1000cm2/V-s
(c) n-type: 𝜎 = 𝑒𝜇𝑛 𝑛𝑜
= (1.6 × 10−19 )(1100)(5 × 1016 )
= 8.8 (𝛺 -cm)−1
p-type: 𝜎 = 𝑒𝜇𝑝 𝑝𝑜

= (1.6 × 10−19 )(400)(2 × 1016 )

= 1.28 (𝛺 -cm)−1
compensated: 𝜎 = 𝑒𝜇𝑛 𝑛𝑜
= (1.6 × 10−19 )(1000)(3 × 1016 )
= 4.8 (𝛺 -cm)−1
𝐽
(d) 𝐽 = 𝜎𝛦 ⇒ 𝛦 =
𝜎
120
n-type: 𝛦 = = 13.6V/cm
8.8
120
p-type: 𝛦 = 1.28 = 93.75V/cm
120
compensated: 𝛦 = = 25V/cm
4.8

Q10)
1 1 1 1 1
= + = + = 0.006
𝜇 𝜇1 𝜇2 250 500
Then
𝜇 = 167cm2/V-s