African Centre for National Advanced School of

Advanced Studies Engineering of Yaounde, UYI

ELECTRIC AND ELECTRONIC CIRCUITS

STI 2054
DIODES,BJTs, FETs: SMALL-
TIME VARYING SIGNALS
Dr. DIDIER BELOBO BELOBO
Electric and electronic circuits – STI 2054 – National Advanced School of Engineering of Yde – UYI – 2022 D. B B
SMALL TIME-VARYING FUNCTIONS
(STVFs)
GOALS
Understand the functioning of diodes, BJT, JFET, and
MOESFET when the source voltages are small time-
varying sinusoidal functions

Draw equivalent circuits and determine their

characteristics
Electric and electronic circuits – STI 2054 – National Advanced School of Engineering of Yde – UYI – 2022 D. B B
 STVFs: DIODES
Case 1: forward biased diode
The diode is forward bias, a current flows through the
diode; consider an operating point Q , ,
superimposing a small amplitude time-varying voltage v
to this means we are in dynamic regime
(1), small voltage variation
induces small current variation , hence
Electric and electronic circuits – STI 2054 – National Advanced School of Engineering of Yde – UYI – 2022 D. B B
 STVFs: DIODES
Case 1: forward biased diode
if . , thus ≫ , (2)

is the dynamical resistance

Electric and electronic circuits – STI 2054 – National Advanced School of Engineering of Yde – UYI – 2022 D. B B
 STVFs: DIODES
Case 1: forward biased diode
General case
(5) (6)

: !"# !" #$%$# ! : &' !" #$%$# tor

In general, ≪

Electric and electronic circuits – STI 2054 – National Advanced School of Engineering of Yde – UYI – 2022 D. B B
 STVFs: DIODES
Case 1: forward biased diode
Equivalent circuit

Fig. 1
Electric and electronic circuits – STI 2054 – National Advanced School of Engineering of Yde – UYI – 2022 D. B B
 STVFs: DIODES
Case 2: reverse biased diode
The diode is equivalent to a capacitor, ≫
For a silicon diode, inverse current negligible

(7)

Electric and electronic circuits – STI 2054 – National Advanced School of Engineering of Yde – UYI – 2022 D. B B
 STVFs: DIODES
Case 2: reverse biased diode
/*
Junction of width
(8) :diode voltage barrier height
/*
:external voltage applied to diode

(9) Linear junction doping

/

Electric and electronic circuits – STI 2054 – National Advanced School of Engineering of Yde – UYI – 2022 D. B B
 STVFs: BJTs

Variable physical quantity = static physical quantity +

alternative physical quantity
+, +, - , (10),
(11)circuits – STI 2054 – National Advanced School of Engineering of Yde – UYI – 2022 D. B B
Electric and electronic
 STVFs: BJTs

In Eqs. (10)-(11), and +, are coordinates of the

static operating point Q, and - are corresponding
small amplitude time-varying quantities arround the
operating point coordinates

Electric and electronic circuits – STI 2054 – National Advanced School of Engineering of Yde – UYI – 2022 D. B B
 STVFs: BJTs
Equivalent electrical circuit
′# / # *
′# 0- (13)

Electric and electronic circuits – STI 2054 – National Advanced School of Engineering of Yde – UYI – 2022 D. B B
 STVFs: DIODES

- 1 -1 * #
- -
1 when # ,1 * when -
- #

# 1* -1** #
# #
1* when # , 1** when -
- #

Electric and electronic circuits – STI 2054 – National Advanced School of Engineering of Yde – UYI – 2022 D. B B
 STVFs: BJTs
Equivalent electrical circuit
∆ -
1 : input resistance
∆-
∆ -
3 1 * (15): inverse voltage amplification
∆ #
∆#
0 1* (17): current amplification
∆-
∆ #
4 1** (18): output resistance
∆#

Electric and electronic circuits – STI 2054 – National Advanced School of Engineering of Yde – UYI – 2022 D. B B
 STVFs: FETs
, , hence 5, 6 7, ' 58

5 5 , 7 , 7 5 , 7 (19)
differentiating (19) and using 7 9
: ' ' :; :' , 6 (20)
<5
: ' at 78 #!"' $" ,
< 58
<5
:; at 5 #!"' $"
< 7
Electric and electronic circuits – STI 2054 – National Advanced School of Engineering of Yde – UYI – 2022 D. B B
 STVFs: FETs
Equivalent electrical circuit

Electric and electronic circuits – STI 2054 – National Advanced School of Engineering of Yde – UYI – 2022 D. B B