Scribd Logo
Upload

Welcome to Scribd!

  • Exercise 13

    Uploaded by

    Archita V
    8 views2 pages
    1) The document discusses doping a semiconductor with a high density of donor or acceptor atoms, causing it to transition from a semiconductor to a "bad metal". 2) Regular doping involves increasing conductivity with increasing carrier concentration as more carriers are excited. 3) In degenerate doping, the number of charge carriers remains constant despite increasing dopant concentration, as all available states within the impurity band are filled.

    Original Description:

    Original Title

    Exercise13

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    Report this Document
    1) The document discusses doping a semiconductor with a high density of donor or acceptor atoms, causing it to transition from a semiconductor to a "bad metal". 2) Regular doping involves increasing conductivity with increasing carrier concentration as more carriers are excited. 3) In degenerate doping, the number of charge carriers remains constant despite increasing dopant concentration, as all available states within the impurity band are filled.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    8 views2 pages

    Exercise 13

    Uploaded by

    Archita V
    1) The document discusses doping a semiconductor with a high density of donor or acceptor atoms, causing it to transition from a semiconductor to a "bad metal". 2) Regular doping involves increasing conductivity with increasing carrier concentration as more carriers are excited. 3) In degenerate doping, the number of charge carriers remains constant despite increasing dopant concentration, as all available states within the impurity band are filled.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    of 2

    Preclass

    Activity:
    -
    13

    (14 group elements)

    2r (Si) 11.7 Met Me


    1) 1.1
    = =

    Er(G2) 16.2
    = Me* 0.55 Me
    =

    Donor
    and semiconductor
    impunity
    e
    =->
    and ao:
    t(t
    I
    = as=()3r]
    and

    dope inGe

    ,
    Now,

    I "(**)
    Relatin radii (vann)

    C I
    -

    of
    extra e

    17) 10.63 2
    #
    = 29.45

    101 0.Fr

    evening)
    was 4Er (ie4
    dielectic a met
    expected, and would mean
    -

    the radius
    of
    the entaclection would be
    greater in one
    mystal
    crystal.
    than Si
    2) It the
    describes ease
    of a
    degamate doping' where a
    high densityof donor/acceptor
    added to semiconductor such thatit
    atoms one a ->

    goes from a semiconductor

    to bad metal

    regular doping:
    absence
    sypically, increasing
    ->
    under we carer concentration with I

    as additional
    change carries are excited

    degenuate regime, of charge


    -> Butin the number carriers are countantwort -

    since within
    impunityland
    lies
    of

    You might also like