|7.

26| Antennas and

Microwave
There is an infinite number of choices of line lengths that
(i.e., the value of /2 is a degree of freedom), but it
gives the
can be
Ednegsiirneed r, Ay
bandwidth is optimized if the reflection coefficients for the two
conjugates.
shown phastga,
states are
Agood input match for the reflection-type phase shifter requires
be well matched. The insertion loss is limited bythe loss ofthe that the iod,
as by the forward and reverse resistances of the diodes. hybrid, ,as we
transformation sections can be used to improve the performance. Impedarca
7.6 MICROWAVE TUBES

Microwave tubes are constructed to overcome the limitations of conyentie!

electronic vacuum tubes such as triodes, tetrodes and pentodes. The
conventional electronic vacuum tubes fails to operate above the 1GHZ
In microwave tubes the electron transit time is utilized for microwzre
oscillation or amplification.
a Transit Time:
The transit time is the time taken for an electron to travel from cathode w
anode.
The principle used in the microwave tubes are an electron beam on wict
space - charge Waves interact with an electromagnetic fields in the microwat
cavities to transfer energy to an output circuit of the cavity (klystrons D
magnetrons) or interact with the electromagnetic fields in a slow - wk
(travelinz
structure to give an amplification through the transfer of energy
wave tubes).

Microwave Tubes

O-Type microwave tube Mi -Type microwave tube

Fig 7.27 Types of microwave tubes

Jficrowave Semiconductor
Devices and Tubes 7.27|
-Type Microwave Tube
MagnetrONS are erossed field devices (M - type) where the static
field is perpendicular to an electric field. In this tube. magnete
the electrons can traver
in a curved path.

i) 0-Type Microwave Tube

. The most important microwave tubes are linear beam or 0' - type tubes in
recognition of the straight path taken by an electron beam.
Klystrons and TWTs are linear beam tubes in which an accelerating electric
field is in the sane direction as the static magnetic field used to foCus an
electron beam.

Linear -beam tubes (0-type)

Slow - wave structure

Cavity

Forward- wave Backward- wave

Resonant

Helix TWT BWA, BWO

Klystron

Coupled - cavity
Twystron TWT
Reflex Klystron

ofinear-beam tubes
Fig 7.28 Types
andBW0 Baackward-Wave Oscillator.
Backward-Wave Amplifier,
BWA -
7.28 Antennas and
Microwave
7.7 KLYSTRONS Engine ring
7.7.1 Introduction
a Definition

"A klystron is a vacuum tube that can be used either as a

generator or as qn
amplifier of power at the microwave frequencies operated by the
velocity and current modulation. principles of
There are two basic configurations of klystron tubes,
(1) Reflex Klystron -Itis used as low power microwave oscillator, and
(i) Two cavity (or) Multicavity Klystron - It is used as low power microuns.
amplifier.
7.7.2 Two Cavity Klystron Amplifier
L

RF input Buncher cavity Catcher cavity RF output

Anode Drift space Collector

Cathode
V(t4) i(t;)

Bunched
electron
Vg beam
o d L+d L+ 2d
Distance scale
Vo Time scale
to ty t tg
Fig 7.29 Two - cavity klystron amplifier
(1) Introduction
whichthe
in
o Atwo-cavity klystron amplifier is a velocity modulated tube felectrons
velocity modulation process produces a density modulated stream foutputl
It consists of two cavities namely, buncher (input) cavity and catcher
cavity.
Merowave,Semiconduetor
Devices und Tubes |1.29|
prift Space:
The separation beetween the buncher and catcher grids is called as drif space.
(2)Operation
o Cathode emits an clectrons beam, This
The accclerating anode clcctrons beam first reaches the anodc.
producesa highvelocity clecirons beam.
o The input RF signal to bc
amplified excitcs the buncher cavity with a
coupling loop.
a Bunching:
The electrons beam passing the buncher cavity gap at zeros of the
gp
voltage g (voltage between buncher grids) passes through an unchanged
velocity.
The electrons beam passing through the positive half cycles of the gup
voltage undergoes am increase in velocity, those passing through the negative
Swings of the gap voltage undergoes a decrease in velocity. As a result of these
actions, the electrons gradually bunch together as they travel down the drift
space. This is called bunching.
oThe first cavity acts as the buncher and velocity - modulates the beam. Thus
the electron beamn is velocity modulated to form bunches or under goes
density modulation in accordance with the input RF signal cycle.
A Velocity - Modulation:
known as the velocity
The variation in electron velocity in the drift space is
modulation
beam passing through the catcher cavity
oWhen this density modulated electron thereby excite the RF field in an
RF current (ac current) and
grid, it induces
cycle.
output cavity at an input signal such that the level of excitation of the second
0 The ac current on
the beam is
in the buncher cavity and hence the
cavity is much greater than that
amplification takes place.
can be fed back to the buncher
portion of an amplified output
o If desired, a manner to obtain aself-sustained oscillations.
a regenerative
cavity in
|7.30 Antennas and
Microwave
o The maximum bunching should occur approximately at a
second cavity grids during its retarding phase, thus themidway
transferred from the electrons to thefield of the second cavity.
Bngine r
kineticbetwe n h,
ing
o The electrons then emerge from the second cavity with
energy
terminates at the collector. reduced velocity
a Catcher Cavity:
The output cavity catches energy from the bunched
Therefore, it is also called as catcher cavity. electron beam
(3) Characteristics and Applications.
a Characteristics:

(i) Efficiency: s 40%.

(ii) Power output:
(a) Continuous wave average power
500 kW
(b) Pulsed power 30 MWat 10 GHz.
(iii) Power gain: s 30dB.
a Applications:
() Used in Troposphere scatter transmitters.
(ii) Satellite
communication ground stations.
(iii)) Used in UHF TV
transmitters.
(iv) Radar transmitters.
7.7.3 Reflex Klystron
(1) Introduction
0scillator: Single Cavity Klystron
o The reflex
klystron is an oscillator with a built in
the same cavity for both the feedback mechanism.
o The repeller bunching and the output.
electrode is a negative
potential
beam back to the resonator cavity. This providesand the bunched
electn
sends a positive Seedhad
mechanism which supports oscillations.
Mierowave Semiconductor
DDevices and Tubes |7.31
o Due dc
to

This
voltage(V)in the cavity circuit, RF noise is generated in the cavity.
electromagnetic
frequency.
noise field in the cavity acts as a
cavity reso
o When the oscillation frequency is varied, the resonant freequency of cavity and
the feedback path phase shift must be
readiusted for apositive feedback.
Repeller R

t=

d RF output

t=0

Cavity anode A
V
+
Accelerating grid G

V
Cathode K

Electron gun

ofa reflex klystron

Fig 7.30 Schematic diagram
2) Mechanism of Oscillation
beam injected from the cathode is first velocity - mnodulated by
o The electron
cavity -gapvoltage.
which encountered the positive half cycle of the RF field, where
o The electrons
gap velocity will be accelerated.
In the cavity
 Antennas and
7.32 Microwave
o The clectrons which encountered zero RF
field will páss with Engine ring
original velocity, and the electrons which encountered the negative unchange
half cycle
velocity willbe decelerated.
o All these velocity modulated electrons will be repelled back to the
the repeller due to its negative potential.
cavity by
o The repeller distance L' and the voltages (beam & repeller voltage) can be
adjusted to receive all the velocity modulated electrons at a same time on the
positive peak of the cavity RF field.
The velocity modulated electrons are bunched together and lose their kinak.
energy when they encounter the positive cycle of the RF field. This loe at
energy is transferred to the cavity in order to conserve the total power.
o If the power delivered by the bunched electrons to the cavity is greater tho
the power loss in the cavity, an electromagnetic field amplitude at the resonant
frequency of the cavity will increases to produce the microwave oscillations.
o The electrons are finally collected by the walls of the cavity or other grounded
metal parts of the tube.
(3) Applegate Diagram
Distance
from
gap

B A' B' C!
3
mode
Cavity
gap
velocity Returned electron beam
-Transit time for 1- mode is retarded during
this half cycle

Electron beam V=V sinot

is accelerated Electron beam
is decelerated
during this half cycle
during this half cycle

Fig 7.31Applegate diagram with gap voltage for a reflex klystron.

MierowaveSemiconductor
Devices and Tubes 7.33|
o
The
electrons passing through the
passed through which an buncher grids are accelerated / retarded /
whether they encounter the REFunchanged initial dc velocity depending upon
positive negative / zero Signal field at the buncher cavity gap a
distance - time plot. This iscrossing phase of the cycle, respectively as shown by
called the applegate diagram.
a Explanation:
, When the gap voltage is at a positive peak, an electron passing at
is called eariy electron. This this moment
electron is accelerated towards the repeller and
travels at adistance, which is longer comparatively.
The electron at a neutral zero of gap voltage is called the
reference electron.
When the gap voltage is at a negative peak the corresponding electron is called
the late electron. This electron decelerated and travels at a less
distance.
These electrons have different velocities cover a different distances and forms
a bunch at the cavity gap.

(4) Modes of Oscillation

The condition for oscillation of reflex klystron is,

to -n+T=NT 4

where N=n +
4

Mode of oscillation = n = 0,1, 2, 3,...

frequency.
Tis the time period at the resonant
electron to travel in the repeller space.
to is the time taken by the reference

S) Applications and Drawbacks of Reflex Klystron

Characteristics,
A Characteristics :
Frequency range : 1to 25 GHz.
500 mW
It is a low- power generator of 10 to
Power output
About 20 to 30%.
Eficiency
7.34 Antennas and
Microwave
a Applications:
The main applications of reflex klystrons are,
() This type is widely used in the laboratory for microwave
Engine rny
(i) In microwave receivers, as local oscillators in
applications. commercialmeasuandre menta.
(iii) Also plays arole in airbone Doppler radars as well as miltary
missiles.
Drawbacks of Klystrons
The klystrons are having the following drawbacks:
() Klystrons are essentially narrow band devices as they utilize
narrow gap.Cavity
resonators to velocity modulate the electron beam over a
(i) In klystrons and maziielrons. the microwave circuit
resonant structure which linits the bandwidth (or consists of a

frequency range) of thetube.

the operating
7.8 HELIX TRAVELING-WAVE TUBE (0R) TR¤VELLING
WAVE TUBE AMPLIFIER (TWTA)
7.8.1 Introduction
a Definition

ATraveling Wave Tube Amplifier (TWTA) circuit uses a

helix slow wa
non resonant microwave guiding structure and thus a broad band
microwart
amplifier.
Twomain constituents of a TWT are,
() An electron beam, and
(i) A structure supporting a slow electromagnetic Wave (slow-wa:
structure).
In the case of the TWT, the microwave circuit is non resonant and the wasi
propagate with the same speed as the electrons in the
beamn. modulationcaust
The initial effect on the beam is asmall amount of velocity
by the weak electric fields associated with the
traveling wave.
 Merowave Semiconductor Devices and
Tubes 7.35
This velocity
inducesan RF modulation later translates to modulation, which then
current in the circuit, an current
causes amplification.
Amplified RF
output
Bunching
RF input Efect of

Control anode

Cathode Electron beam

focusing magnet Attenuator
Filament Tube body
Collector

Electron
beam
Helix
RF input RF output
Gain or modulation
+
control votage

Beam supply
voltage

Collector supply
voltage
circuit
Fig 7.32 TWT amplifier tube and
1.8.2 Operation
static magnetic field and collected in
The electron beam is focused axially by a
a collector circuit.
input signal is injected on the helix slow-wave circuit
4 The mierowave
electron beam,, which produces an axial electric field of the
Surrounding an caninteracts with the electron beam.
ofthe helix and it
signal at the center
|7.36| Antennas and M
Micisrowave
shghtBtnyg e rimg
The de beam voltage is adjusted so that the beam velocity
than the axial component of a field on the
slow-wave structure.
During transit along the axis, an electron beam transfers
energy to the traveling signal wave and thus signal field great
amplitude amount
Anode
Cathode
RF input Slow-wave structure
|(helix) RF output increases.
Gun
assembly
Magnetic focusing structure
Heater Collector
Fig 7.33 Simplified TWTA circuit
Attenuator:
An
attenuator is placed over a part of the helix near an
attenuate any reflected waves due to impedance mismatch th¡t output pnd
toan input to cause the oscillations. can be fed bd
a Magnet:
The magnet prouces an axial
magnetic field to prevent spreading of a
electron beam as ittravels down the tube.
a Need of Slow - Wave Structures (Helix
Tube):
Slow Wave structures are special
circuits that are used in microwave lube
to reduce the wave velocity in a
certain direction so that an electron beam a
the signal wave can interact.

7.8.3 Characteristics and Applications ofTWTA

Characteristics of TWTA:
Frequency range : 3 GHz and higher
Bandwidth : about 0.8 GHz
Efficiency : 20 to 40%
Power output : upto 10 kW average
Power gain : upto 60 dB
irowave
Semiconductor
Devices and Tubes
Applications of TWTA: 7.37
The main

()
applications of
Used in medium TWTA are,
(ii) Used in power satellite,
high power satellite
transmit ers, andtransponder output,
(ii) Ued in radar
(iv) Used in
broadband microwave amplifier.
7.9
MICROWAVE CROSSED-FIELD TUBES (M-TYPE)
191 Introduction
4ACroSsed-field microwave tube is a
energy using an electronic device that converts de into
microwave
4 M-type devices or crossedenergy-conversion process.
field tubes in which the dc nagnetic field and dc
electric field are perpendicular to each other. The
called magnetron. principal tube in this type is
# In all crossed - field tubes, the dc magnetic field plays a direct role in the RF
interaction process. A magnetron oscillator is used to generate high mcrowave
power.

Magnetron provides microwave oscillations of very high peak power. The

magnetron was invented by Hull in 1921 and an improved high power
magnetron was developed by Randall and Boot around 1939,.
4)Power Output and Efficiency
o A magnetron can deliver a peak power output of up to 40 MW with the dc
voltage of 50 kV at 10 GHz. The average power output is 800 kW.
0 The magnetron possesses a very high efiCiency ranging from 40 to 709%
Magnetrons are commercially available for peak power output from 3kW and
higher.
2) Applications
used on,
The magnetrons are widely
 Antennas and
Microwave
7.38|
()
(i)
Radar transmitters with high output power,
Satcllite and missiles for telemetry,
Engi e r
(ii) Industrial heating, and
(iv) Microwave ovens.

7.9.2 Cylindrical Magnetron: Magnetron

B
Anode

Vo

E,

RF
End hat Cathode
output
Fig 7.34 Schematic diagram of n cylindrical magnetron
A schematic diagram of a cylindrical magnetron
oscillator is shown i
Fig.7.34. high power microwave oscillatur uses traveling- wave cylindriga
A
magnetron tubes.
This tvpe of magnetron is also called as a
conventional nagnetron. It consist
of a cylindrical cathode of finite length and
radius 'a' at the centre surroundead
by a cylindrical anode of radius b.
The anode is a slow wave structure
consisting of
several reentrant cavila
equi-spaced around the circumstance and coupled together
cathode space by means of slots. through an
the
d The dc voltage Vo is
applied between the cathode and the anode anda d
magnetic flux density Bo is maintained in the positive z direction by meansof:
permanent magnet or an
When the de voltage andelectromagnet.
emitted from the cathodethetriesmagnetic flux are adjusted properly, the
electroS
o
Crossed fields Eand Hinthe to travel to anode, but with the influence
takes a curved path. space between anode and cathode, theele.r
Microwave,Semiconductor
Devices and Tubes 7.39
The accelerated
electrons in the curved when retarded by the RF
field, the transter
0scillations till the
energy from an trajectory,
electron to the cavities to grow RF
system RF losses balances the RF oscillations for stability.

Electron path

Cathode

Fig 735 Electron path in acylindrical magnetron

7.10 SOLVED PROBLEMS

PROBLEM-1
An IMPATT diode has the followingparameters:
cm/s
Carrier drift velocity, Vå=2 x10
Drift -regionlength, L= 8 um
= 100O V
Maximum operating voltage, Vomax
200 mA
Maximumoperating currentImar =
Efficiency, F=25%
maximum CW outputpower inWatts and
Compute (a) The resonant frequency in Gigaherta.
(6) The
OSolution:
Pout = nPde =n
, Vo
(a) Cw output power, 25 x 0.2 =5W
= 0.25 x 100 x 200 x 10
Vd 2x 10
frequency, j = L 2x 8x 10-6
(b) The resonant
= 0.125 x 10" GHz =12,5 GHZ
 Antennas and
7.40 Microwave
7.11 TWOMARKS QUESTIONS
AND ANSWERS Eng e riNg
What is Gunn diode
1. What is transferred electroneffect? (0r)
Some materials like gallium arsenide (GaAs) exhibits: a negative
mobility (i.e., a decrease in the carrier velocity with an increase in
field) when biased above a threshold value of an electric field, The
thdeif ereealtueatik,
the lower - energy band will be transferred into the higher - energy eleband.ctons Th
behaviour is called transferred electron effect or Gunn effect and the
also called as Transferred Electron Device (TED) or transferred device is
oscillator or Gunn diode or Gunn oscillator. electen
2 Write the applications of Gunn diode.
The various applications of Gunn diodes are:
() Gunn diodes are negative resistance devices which are normally
used as a
low power oscillator at the microwave frequencies in transmitter and alo
as local oscillator in receiver front ends.
(ü) Used in parametric amplifiers as pump source.
(iii) Used in radar transmitters (Police radar, CW Doppler radar).
(iv) In broadband microwave amplifiers.
(v) Pulsed Gunn diode oscillators used in transponders for air traffic
conto
(ATC) and in industry telemetry systems.
(vi) Fast combinational and sequential logic
circuits.
(vii) Low and medium power oscillator in
microwave receivers.
3. Mention the important features of TEDs.
The important features of TEDs are,
() TEDs are bulk
devices without junctions,
(1) TEDs are
operate with hot electrons having more thermal energy
(i1) TEDs are tunable over a wide
characteristics. frequency range witn 0
 irowane
Semiconductor DDevices
and Tubes
When willthe
The carriernegative resistance occur in
7.11|

drift velocity is Gunn diode?

when an
electric
field is beyond the
field is varied linearly
from zero toincreascd Irom zer to a naxUm
a
and the diode threshold value of threshold valuc. When the clectric
exhibits negative 3000V/em, the drift velocity is decrcascd
Draw an equivalent circuit resistance.
of Gunn diode.
Rs
Gp

where C; - Diode capacitance,

-R - Diode resistance,
Rs -Total resistance of leads, ohmic contact, bulk resislance of
diode,
Package inductance, and
Cp Package capacitance.
operationof Gunn diode?
6. List the various modes of operating conditions, Gunn diode
material parameters and
Depending on the
modes,
can be used in four basic
Gunn oscillatiòn mode,
()
Stable amplification mode,
(ii)
LSA oscillation mode, and
(1i1)
circuit oscillation mode.
(iv) Bias devices.
avalanche transittime diode with the lughly
Define devices are p-n junction
time negative resistance at micrOwave
Avalanche transit - produce a
They could breakdown and
and nregions. carrier impact ionization avalanche
doped p by using a region under the reverse biascd condition.
frequencies
the high field intensity
carriers driftin
 Antennas and
Microwave
|7.42

8. Name
the modes available in
avalanche device.
avalanche device
Engine ring
modes of
There are three
IMPATT-Impact Jonization Avalanche Transit Timed Device,
Avalanche
Trapped Plasma Avalanche Triggefed
()
(ii) TRAPATT Transit Device
and
Barrier Injected Transit Time Device.
(ii) BARITT -
is IMPATT diode?
9. VhatThe word IMPATT is an acronym for Impact Ionization Avalanche Transi
Time. These diodes employ impact ionization and transit time properties of
produce negative resistance at
semiconductor structure to
microwave
frequencies.
in IMPATT?
10. What are the factorsexhibit differential negative resistance
The IMPATT diodes exhibit a differential negative resistance mainly by tun
effects:
The impact ionization avalanche effect, which causes the carier
current Io(t) and the ac voltage to be out of phase by 90°.
(ii) The transit - time effect, which further delays the external current l0
relative to the ac voltage by 90°.
11. Draw the equivalent circuit of IMPATT diode.
Lp

Rd
Cp Load

Chip Package Quarter

wave
transformer
Here, Ra is the diode
inductance and negative resistance and Lp, Cp are the package
capacitance,
 frowave

List the
Semiconductor D
Devices and Tubes
The major
(i)
disa dvantages
IMPATTdisadvantages
of the
IMPATT
of the didoes.
7.43

(i) It
tends diodes
to be have low
IMPATT diodes are,
noisy due to efanficiency.
of operating current.
(ii) A
typical noise figure is 30 dB avalanche process
and requires the high level
diodes.
13 Write the which is worse than that of the Gunn

The applications
applications
of
of IMPATT IMPATT diodes.
() Used in diodes are,
(i) Used in microwave generators.
modulated output
(iiil) Used in receiver oscillators.
local oscillators.
(iv) Used in
parametric
(v) IMPATT diodes areamplifier
as pumps.
also suitable for negative resistance
14. Give the conparison between amplification.
GUNN and IMPATT diodes.
Parameters Gunn IMPATT
Operating frequency 1-100 GHz 0.5-100 GHz
One tenth of center
Bandwidth 2% of center frequency.
frequency.
A few watts (CW), 1W (CW, 400W
Power output 100-200 W(pulsed) pulsed
Oscillator Oscillator, amplifier
|Application n' pip reverse bias
n'nn" GaAs single crystal p-n junction
Construction
GaAs, InP Si,Ge, GaAs or InP
Basic semiconductors

Is, What is SBD?

Diode is a simple metal semiconductor barrier diode that
Barrier
Schottky impedance andit is basically an extension of the point
non-linear
exhibiting a
contact diode.
 Antennas and
Microwave
|7.44

16. Drawv the symbol of

SBD and its equivalent circuit. Engne riny
Symbol ofSBD
Ls Rs

Cp R(V)

Equivalentcircuit
where RË - Junction resistance of the diode.
C; - Junction capacitance
Rs Series resistor.
Ls Series inductance.
Cp Shunt capacitance.
17. Mention the applications of SBD.
SBD'sare used as,
(i) Lownoise mixer.
(ii) Balanced mixer ina CW Radar.
(iii) Microwavedetectors.
18. Draw the equivalent circuits of aPIN diode.
LË LË

Z, C Z
R,
Rr
(a) Reverse bias state (b) Forward bias state
 Jicrowave,
Semiconductor Devices and Tubes
Mention the 7.45
(i) applicationsPINof PIN diodes.
(i) Single-pole diode switches.
Gi) Mul
PIN tDiode
iple-polPhase
e and/or multiple-throw switches.
20. Givethe
Shifters.
classification
They are classified in
of
microwave tubes.
into two types as,
) O-type
(ii)
microwave tube or linear beam.
M-type microwave tube.
1. Define
thefollowing: () 0-type tubes, and (i) M-type tubes.
(i) O-ype tubes:
Klystrons and TWTs are linear beam tubes in which the accelerating electric
field is in the same direction as the static magnetic field used to focus an
electron
beam. Here the electron beam travel in a straight line.
(ii) M-type tubes:
Magnetrons are crossed field devices (M- type) where the static magnetic
field is perpendicular to the electric field. In this tube, the electrons beam travel
in a curved path.
22. Write about klystron and its configurations.
used either as a generator or as an
A klystron is a vacuum tube that can be
of power at the microwave frequencies operated by the principles of
amplifier
two basic configurations of klystron
velocity and current modulation. There are
tubes, microwave oscillator. and
Itis used as loW power
(i) Reflex Klystron - It is used as low power
Multi cavity Klystron
(ii) Two cavity (or)
microwave amplifier.
bunching?
mean b
23. What do you
passing the buncher cavity gap at zeros of the gap
beam
The electrons between buncher grids) passes through an unchanged
Vg (voltage
voltage V,
velocity.
 Antennas and.
7.46 Mi crowave
The electrons beam passing through the positive
Engine ring
half cycles of
voltage undergoes an increase in velocity, those passing through th &a
swings of the gap voltage undergoes a decrease in velocity. As a result
of
actions, the electrons gradually bunch together as they travel down
space. This is called bunching. the these
drt
24. Define velocity modulation.
The variation in electron velocityin the drift space is known as
modulation.
the velocity
25. What is drift space?
The separation between buncher and catcher grids in a two
amplifier iscalled as drift space.
cavity klystron
26. State the power gain, power output and etficieney of two - cavity klystron.
amplifier.
() Efficiency: About 40%.
(i) Power output: Average power (CW power) is up to 500kW and
pulsed power is upto 30MW at 10GHz.
(iii) Power gain: About 30dB.
27. Mention the applications of two- cavity klystron.
() Used in Troposphere scatter transmitters.
(ii) Satellite communication ground stations.
(iii) Used in UHF TVtransmitters.
(iv) Radar transmitters.
28. Definereflex klystron.
The reflex klystron is an oscillator with a built in feedback
mechanis.
uses the same cavity for both the bunching and
the output.
29. What is an applegate
diagram?
The electrons passing through the buncher grids are accelerated / retarded/
passed through which an unchanged initial de velocity depending upon whether
they encounter the RF signal field at the
zero crossing phase of the cycle, buncher cavity gap at positive/ nes
timeplo.
This is called the respectively as shown by distane
applegatediagram.
Lherowave Semiconductor
Writethe
Devices and Tubes
The conditionexprforessions jor node of oscil ations of 7.47

oscil ation of reflex klystron is, reflex klystron.

-NT
where N= n+ 3
4
Mode of oscillation = n = 0,
Tis the time period at
the
resonant 1,2,3,...
I,isthe time taken by the frequency.
reference electron to travel in the repeller space.
31. Listthe applications of reflex
The main applications of klystrons.
reflex
() This type 1s widely used in klystrons
the
are,
(ii)) In microwave
laboratorv for microwave measurements.
receivers, as local oscillators in commercial and
applications. military
(Gii) Also plays a role in airborne Doppler
radars as well as missiles.
32, Write the drawbacks of klystron.
The klystrons are having the following drawbacks:
() Klystrons are essentially narow band devices as they utilize cavity
tesonators tovelocity modulate the electron beam over a narrow gap.
(i) In klystrons and magnetrons, the microwave circuit consists of aresonant
structure which limits the bandwidth (or the operating frequency range) of
the tube.
33. What is TWTA?
helix slow wave
A Traveling Wave Tube Amplifier (TWTA) circuit uses a microwave
non resonant microwave guiding structure and thus a broad band
amplifier.
structures?
34, What is the need of slow- wave
circuits that are used in microwave tubes
wave structures are special beas3
Slow - certain direction so that an electron
velocity in a
to reduce the wave
the signal wave can interact.
 7.48 Antennas and
Microwave
35. Give the comparison between 1WTA and klystron amplifer.
SI.No. Klystron amplifier
TWTA
Engine ru;
1. licar beam or '0' type device. Linear beam or 'o'
2. Uses cavities for input and type
output Uses non -resonant device.
circuits. wave circuit
3. Narrow band device due to use of Wide band
resonant cavities.
device because use of
.non resonant wave circuit
4. In
klystron wave is . not The wave in
propagating. propagating wave.
is a TWTA
5. In klystron each cavity operates In
coupling cavity TWTA there is
independently. a coupling effect between the
cavities.
6. Low power output. High power output.
36. State the characteristicsof TWTA.
Frequency range 3GHz and higher
Bandwidth about 0.8GHz
Efficiency 20 to 40%
Power output upto 10kW average
Power gain upto 60dB
37. Name the applications of TWTA.
The main applications of TWTA are,
(i) Used in medium power satellite,
(i) Used in high power
satellite transponder output,
(iii) Used in radar
transmitters,
(iv) Used in broadband
and
38. What is microwave amplifier.
crossed field tubes?
A crossed-field microwaye tube is a device that converts de into microwz:
energy using an electronic
energy-conversion process.
JfcrowaveSemiconductor
Devices and Tubes 7.49
M-type
devices or crossed field tubes in
dc electric field are which the dc magnetic field and
iscalled magnetron, perpendicular to each other. The principal tube in this type
Mention the applications of
J9
The magnetrons are
magnetron.
widely used on,
(i1)
) Radar transmitters with high
G output power,
(i) Satellite and missiles for telemetry,
(iii) Industrial heating, and
(iv) Microwave ovens.

7.12 REVIEW QUESTIONS

of Gunn diode oscillator with a neat diagram.

1. Illustratethe working principle IMPATT diode with neat
construction and the working of
2 Demonstrate the
diagrams.
working of Schottky barrier diode, with neat
detail about the
3. Describe in
sketches.
and also mention its applications.
Explain the working of PINdiode
4
about the applications of PINdiode.
detail
J Discuss in operation of klystronoscillator.
the sketches.
Draw andexplain klystron amplifter
with neat
about two-cavity Wave Tube. Amplifier (TWTA).
Explain of Traveling
working principle feylindrical magnetron.
& Explain the working of
and
construction
9. Demonstrate the