FIR10N65AFG

650V N-Channel MOSFET-T

PIN Connection TO-220F
Features:
□ Low Intrinsic Capacitances
□ Excellent Switching Characteristics
□ Extended Safe Operating Area
□ Unrivalled Gate Charge :Qg= 44nC (Typ.)
□ BVDSS=650V,ID=10A
□ RDS(on) :0.80 Ω (Max) @VG=10V G
D
□ 100% Avalanche Tested S

Schematic diag ram

D

S
Marking Diagram
Y = Year

A = Assembly Location

YAWW WW = Work Week

FIR10N65AF
FIR10N65AF = Specific Device Code

Absolute Maximum Ratings (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit

VDSS Drain-Source Voltage 650 V

Tj=25℃ 10
ID Drain Current A
Tj=100℃ 6.6
VGS(TH) Gate Threshold Voltage ±30 V

EAS Single Pulse Avalanche Energy (note1) 580 mJ

IAR Avalanche Current (note2) 9.5 A

PD Power Dissipation (Tj=25℃) 60 W
Tj Junction Temperature(Max) 150 ℃
Tstg Storage Temperature -55~+150 ℃
Maximum lead temperature for soldering purpose,1/8” from
TL 300 ℃
case for 5 seconds

Thermal Characteristics
Symbol Parameter Typ. Max. Unit

RθJC Thermal Resistance,Junction to Case - 2.08 ℃/W

RθJA Thermal Resistance,Junction to Ambient - 120 ℃/W

@ 2018 Copyright By American First Semiconductor REV:1.0 Page 1/8

 FIR10N65AFG
Electrical Characteristics (Ta=25℃ unless otherwise noted)

Symbol Parameter Test Condition Min. Typ. Max. Unit

Off Characteristics

BVDSS Drain-Source Breakdown Voltage ID=250μA，VGS=0 650 - - V

Breakdown Voltage Temperature ID=250μA ,Reference
△BVDSS/△TJ - 0.7 - V/℃
Coefficient to 25℃
VDS=650V, VGS=0V - - 1
IDSS Zero Gate Voltage Drain Current μA
VDS=520V, Tj=125℃ 10
Gate-body leakage Current,
IGSSF VGS=+30V, VDS=0V - - 100
Forward
nA
Gate-body leakage Current,
IGSSR VGS=-30V, VDS=0V - - -100
Reverse
On Characteristics

VGS(TH) Date Threshold Voltage ID=250μA,VDS=VGS 2 - 4 V

Static Drain-Source
RDS(ON) ID=5.0A,VGS=10V - - 0.80 Ω
On-Resistance
Dynamic Characteristics
Ciss Input Capacitance - 1890 -
VDS=25V，VGS=0，
Coss Output Capacitance - 166 - pF
f=1.0MHz
Crss Reverse Transfer Capacitance - 18 -
Switching Characteristics
Td(on) Turn-On Delay Time - 23 55
Tr Turn-On Rise Time VDD=300V，ID=10A - 66 150
ns
Td(off) Turn-Off Delay Time RG=25Ω (Note 3,4) - 144 300
Tf Turn-Off Rise Time - 77 165
Qg Total Gate Charge - 44 57
Qgs Gate-Source Charge VDS=480V,VGS=10V， - 6.7 - nC
ID=10A (Note 3,4)
Qgd Gate-Drain Charge - 18.5 -
Drain-Source Diode Characteristics and Maximum Ratings
Is Max. Diode Forward Current - - - 9.5
A
ISM Max. Pulsed Forward Current - - - 38
VSD Diode Forward Voltage ID=10A - - 1.4 V
Trr Reverse Recovery Time IS=10A,VGS =0V diF/ - 340 - nS
dt=100A/μs (Note3)
Qrr Reverse Recovery Charge - 3.2 - μC

Notes : 1, L=10.6mH, IAS=10A, VDD=50V, RG=25 Ω, Starting TJ =25°C

2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
4, Essentially Independent of Operating Temperature

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 FIR10N65AFG
Typical Characteristics

VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V 1
10
1
6.5 V 10
6.0 V o
150 C
5.5 V
5.0 V

ID, Drain Current [A]

ID, Drain Current [A]

Bottom : 4.5 V
o
o
25 C -55 C

0
10
0 10

※ Notes :
※ Notes :
1. VDS = 40V
1. 250μ s Pulse Test
2. 250μ s Pulse Test
2. TC = 25℃
-1
10
-1 10
0 1 2 4 6 8 10
10 10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

2.0

1
1.5 10
Drain-Source On-Resistance

IDR, Reverse Drain Current [A]

VGS = 10V
RDS(ON) [Ω ],

1.0

0
10

150℃
0.5 VGS = 20V
※ Notes :
25℃ 1. VGS = 0V
2. 250μ s Pulse Test
※ Note : TJ = 25℃
0.0 10
-1

0 5 10 15 20 25 30 35 0.2 0.4 0.6 0.8 1.0 1.2 1.4

ID, Drain Current [A] VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation with Source Current
and Temperature

3000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd VDS = 120V
2500 10
VDS = 300V
Ciss
VGS, Gate-Source Voltage [V]

VDS = 480V
2000 8
Capacitance [pF]

Coss
1500 6

1000 ※ Notes ; 4
1. VGS = 0 V
2. f = 1 MHz
Crss
500 2
※ Note : ID = 9.5A

0 0
-1 0 1 0 10 20 30 40 50
10 10 10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

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 FIR10N65AFG
Typical Characteristics (Continued)

1.2 3.0

2.5
Drain-Source Breakdown Voltage

1.1

Drain-Source On-Resistance
RDS(ON) , (Normalized)
BV DSS , (Normalized)

2.0

1.0 1.5

1.0

0.9 ※ Notes :
1. VGS = 0 V ※ Notes :
2. ID = 250 μ A 0.5 1. VGS = 10 V
2. ID = 4.75 A

0.8 0.0
-100 -50 0 50 100 150 200
-100 -50 0 50 100 150 200
o
TJ, Junction Temperature [ C]
o TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs Temperature vs Temperature

10
2 Operation in This Area
10 is Limited by R DS(on)

10 µs 8
100 µs
1
10 1 ms
ID, Drain Current [A]
ID, Drain Current [A]

10 ms 6
100 ms
0 DC
10
4

10
-1 ※ Notes : 2
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0
10
-2 25 50 75 100 125 150
0 1 2 3
10 10 10 10 TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]

Figure 9-2. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs Case Temperature
(t), T h e r m a l R e s p o n s e

D = 0 .5
0
10

0 .2 ※ N o te s :
1 . Z θ J C (t) = 2 .5 ℃ /W M a x .
0 .1 2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)

0 .0 5
-1
10
0 .0 2
θ JC

0 .0 1 PDM
Z

s in g le p u ls e t1
t2
-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ]

Figure 11-2. Transient Thermal Response Curve

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 FIR10N65AFG

Gate Charge Test Circuit & Waveform

VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
10V DUT
td(on) tr td(off)
tf
t on t off

Unclamped Inductive Switching Test Circuit & Waveforms

L BVDSS
1
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

10V DUT VDD VDS (t)

tp
tp Time

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 FIR10N65AFG

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

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 FIR10N65AFG

Package Dimension

TO-220F
Unit: mm

Size Size Size Size

Symbol Symbol Symbol Symbol
Min Max Min Max Min Max Min Max
W 9.96 10.36 W4 0.25 0.45 L3 12.78 13.18 T3 0.45 0.60
W1 2.54 (TYP) L 15.67 16.07 T 4.50 4.90 G(Φ) 3.08 3.28
W2 0.70 0.90 L1 6.48 6.88 T1 2.34 2.74
W3 1.24 1.47 L2 3.20 3.40 T2 2.56 2.96

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 FIR10N65AFG
Declaration
z FIRST reserves the right to change the specifications, the same specifications of products due to different
packaging line mold, the size of the appearance will be slightly different, shipped in kind, without notice!
Customers should obtain the latest version information before ordering, and verify whether the relevant
information is complete and up-to-date.
z Any semiconductor product under certain conditions has the possibility of failure or failure,The buyer has the
responsibility to comply with safety
standards and take safety measures when using FIRST products for system design and manufacturing,To
avoid To avoid potential failure risks, which may cause personal injury or property damage!
z Product promotion endless, our company will wholeheartedly provide customers with better products!

ATTACHMENT

Revision History

Date REV Description Page

2018.01.01 1.0 Initial release

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