2SC5200 Datasheet, Equivalent, Cross

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Type Designator: 2SC5200

Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 17 A
Forward Current Transfer Ratio (hFE), MIN: 55
Noise Figure, dB: -
Package: TO264

2SC5200 Transistor Equivalent Substitute - Cross-Reference Search

2SC5200 Datasheet (PDF)

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2sc5200.pdf
2SC5200High power NPN epitaxial planar bipolar transistorPreliminary
dataFeatures High breakdown voltage VCEO = 230 V Typical fT = 30
MHzApplication Audio power amplifier321DescriptionTO-264This
device is a NPN transistor manufactured using new BiT-LA (bipolar
transistor for linear amplifier) technology. The resulting transistor
shows good gain linearity