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GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 5 - 30 GHz
ATTENUATION (dB)
-5
-20
-30
-10
-3.0 V
-1.8 V -3.0 V
-1.4 V -1.8 V
-40 -1.4 V
-0.8 V -0.8 V
0.0 V 0.0 V
-15 -50
2 6 10 14 18 22 26 30 2 6 10 14 18 22 26 30
FREQUENCY (GHz) FREQUENCY (GHz)
-5
-2
-10
ATTENUATION (dB)
ATTENUATION (dB)
-4
-15
-20
-6 +25 C
+85 C
-55 C
-25
+25 C
-8 +85 C
-55 C -30
-10 -35
-3 -2.5 -2 -1.5 -1 -0.5 0 -3 -2.5 -2 -1.5 -1 -0.5 0
Vctrl1 (V) Vctrl2 (V)
-2
ATTENUATION (dB)
-4
-6
-8 -3.0 V -0.6 V
-1.8 V 0.0 V
-1.2 V
-10
0 5 10 15 20
INPUT POWER (dBm)
1 Insertion Phase vs. Vctrl1, Vctrl2 = -3V Insertion Phase vs. Vctrl2, Vctrl1 = 0V
180 180
5 GHz 25 GHz
INSERTION PHASE (degrees)
-180 -225
-3 -2.5 -2 -1.5 -1 -0.5 0 -3 -2.5 -2 -1.5 -1 -0.5 0
VCTRL 1 VCTRL 2
-10
-10
RETURN LOSS (dB)
RETURN LOSS (dB)
-20
-20
-30
-3.0 V
-3.0 V
-30 -1.6 V
-40 -1.6 V 0.0 V
0.0 V
-50 -40
2 6 10 14 18 22 26 30 2 6 10 14 18 22 26 30
FREQUENCY (GHz) FREQUENCY (GHz)
-10 -10
-20 -20
-3.0 V -3.0 V
-1.6 V -1.6 V
0.0 V 0.0 V
-30 -30
2 6 10 14 18 22 26 30 2 6 10 14 18 22 26 30
FREQUENCY (GHz) FREQUENCY (GHz)
40
IP3 (dBm)
IP3 (dBm)
30
30
10 GHz
-3.0 V 15 GHz
-2.4 V 25 20 GHz
20 -2.2 V 25 GHz
-1.8 V
0.0 V
10 20
0 5 10 15 20 0 5 10 15 20
SINGLE TONE INPUT POWER (dBm) SINGLE TONE INPUT POWER (dBm)
Input IP3 vs. Input Power Over Temperature Attenuation vs. Frequency over Vctrl
@ 10 GHz, Vctrl1 = -2.2V, Vctrl2 = -3V Vctrl1 = Vctrl2
40 0
-10
ATTENUATION (dB)
35
-20
IP3 (dBm)
-30
+25 C
30 +85 C -3 V
-55 C -1.8 V
-40 -1.4 V
-0.8 V
0V
25 -50
0 5 10 15 20 2 9 16 23 30
SINGLE TONE INPUT POWER (dBm) FREQUENCY (GHz)
Attenuation vs. Vctrl over Temperature Attenuation vs. Input Power over Vctrl
@ 10 GHz, Vctrl1 = Vctrl2 Vctrl1 = Vctrl2
0 0
-10
-10
ATTENUATION (dB)
ATTENUATION (dB)
-20
+25 C
-20 +85 C
-40 C
-30
-30
-40 -3 V -.8 V
-1.8 V 0V
-1.4 V
-40 -50
-3 -2.5 -2 -1.5 -1 -0.5 0 0 5 10 15 20
CONTROL VOLTAGE (V) INPUT POWER (dBm)
1 Input Return Loss, Vctrl1 = Vctrl2 Output Return Loss, Vctrl1 = Vctrl2
0 0
Attenuators - analog - Chip
-10 -10
RETURN LOSS (dB)
-3.0 V
-30 -1.8 V -30 -3.0 V
0.0 V -1.8 V
0.0 V
-40 -40
2 6 10 14 18 22 26 30 2 6 10 14 18 22 26 30
FREQUENCY (GHz) FREQUENCY (GHz)
50
40
IP3 (dBm)
30
20
-2.6 V
-2.2 V
-1.8 V
10 -1.4 V
0V
0
0 5 10 15 20
SINGLE TONE INPUT POWER (dBm)
Outline Drawing 1
1 Pad Descriptions
Pad Number Function Description Interface Schematic
Attenuators - analog - Chip
1 RFIN
2 RFOUT
Assembly Diagram
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
RF Ground Plane
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is 0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm to 0.152 mm (3 to 6 mils).
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage. 0.102mm (0.004”) Thick GaAs MMIC
Storage: All bare die are placed in either Waffle or Gel based ESD protec- Wire Bond
tive containers, and then sealed in an ESD protective bag for shipment. 0.076mm
Once the sealed ESD protective bag has been opened, all die should be (0.003”)
up. Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom-
mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).