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HMC712

v01.0709
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 5 - 30 GHz

1 Typical Applications Features


The HMC712 is ideal for: Wide Bandwidth: 5 - 30 GHz
Attenuators - analog - Chip

• Point-to-Point Radio Excellent Linearity: +28 dBm Input P1dB


• VSAT Radio Wide Attenuation Range: 30 dB
• Test Instrumentation Compact Die Size: 1.4 x 1.2 x 0.1 mm
• Microwave Sensors
• Military, ECM & Radar

Functional Diagram General Description


The HMC712 die is an absorptive Voltage Variable
Attenuator (VVA) which operates from 5 - 30 GHz and
is ideal in designs where an analog DC control signal
must be used to control RF signal levels over a 30 dB
amplitude range. It features two shunt-type attenuators
which are controlled by two analog voltages, Vctrl1
and Vctrl2. Optimum linearity performance of the
attenuator is achieved by first varying Vctrl1 of the 1st
attenuation stage from -3V to 0V with Vctrl2 fixed at
-3V. The control voltage of the 2nd attenuation stage,
Vctrl2, should then be varied from -3V to 0V, with Vctrl1
fixed at 0V.
However, if the Vctrl1 and Vctrl2 pins are connected
together it is possible to achieve the full analog
attenuation range with only a small degradation in
input IP3 performance. Applications include AGC
circuits and temperature compensation of multiple
gain stages in microwave point-to-point and VSAT
radios.

Electrical Specifications, TA = +25° C, 50 Ohm system


Parameter Min. Typ. Max. Units
5 - 16 GHz 2.5 dB
Insertion Loss 16 - 24 GHz 3.5 dB
24 - 30 GHz 4.5 dB
Attenuation Range 30 dB
Input Return Loss 12 dB
Output Return Loss 10 dB
Input Power for 1 dB Compression (any attenuation) 28 dBm
Input Third Order Intercept
(Two-tone Input Power = 10 dBm Each Tone) 32 dBm

Information furnished by Analog Devices is believed to be accurate and reliable. However, no


For price, delivery and to place For price, 20
delivery, andRoad,
to place orders: Analog Devices,
01824Inc.,
responsibility is assumed by Analog Devices for its use,orders:
nor for any Hittite Microwave
infringements Corporation,
of patents or other Alpha Chelmsford, MA
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
1-1 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Phone: 781-329-4700
Application
• Order online at www.analog.com
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are Application Support:
the property of their Phone: 978-250-3343
respective owners. or apps@hittite.com
HMC712
v01.0709
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 5 - 30 GHz
Attenuation vs. Frequency over Vctrl
Vctrl1 = Variable, Vctrl2 = -3V
Attenuation vs. Frequency over Vctrl
Vctrl1 = 0V, Vctrl2 = Variable 1
0 0

Attenuators - analog - Chip


-10
ATTENUATION (dB)

ATTENUATION (dB)
-5
-20

-30
-10
-3.0 V
-1.8 V -3.0 V
-1.4 V -1.8 V
-40 -1.4 V
-0.8 V -0.8 V
0.0 V 0.0 V

-15 -50
2 6 10 14 18 22 26 30 2 6 10 14 18 22 26 30
FREQUENCY (GHz) FREQUENCY (GHz)

Attenuation vs. Vctrl1 Attenuation vs. Vctrl2


Over Temperature @ 10 GHz, Vctrl2 = -3V Over Temperature @ 10 GHz, Vctrl1 = 0V
0 0

-5
-2
-10
ATTENUATION (dB)

ATTENUATION (dB)

-4
-15

-20
-6 +25 C
+85 C
-55 C
-25
+25 C
-8 +85 C
-55 C -30

-10 -35
-3 -2.5 -2 -1.5 -1 -0.5 0 -3 -2.5 -2 -1.5 -1 -0.5 0
Vctrl1 (V) Vctrl2 (V)

Attenuation vs. Pin @ 10 GHz


Vctrl1 = Variable, Vctrl2 = -3V
0

-2
ATTENUATION (dB)

-4

-6

-8 -3.0 V -0.6 V
-1.8 V 0.0 V
-1.2 V

-10
0 5 10 15 20
INPUT POWER (dBm)

Information furnished by Analog Devices is believed to be accurate and reliable. However, no


For price, delivery and to place orders: For price, 20
delivery, and to place orders: Analog
MADevices,
01824 Inc.,
responsibility is assumed by Analog Devices for its use, nor for anyHittite Microwave
infringements Corporation,
of patents or other Alpha Road, Chelmsford,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343 Fax: 978-250-3373
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Order
Phone: On-line at www.hittite.com
781-329-4700 • Order online at www.analog.com 1-2
Trademarks and registered trademarks are Application Support:
the property of their Phone: 978-250-3343
respective owners. Application Support: Phone: 1-800-ANALOG-D
or apps@hittite.com
HMC712
v01.0709
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 5 - 30 GHz

1 Insertion Phase vs. Vctrl1, Vctrl2 = -3V Insertion Phase vs. Vctrl2, Vctrl1 = 0V
180 180

135 2 GHz 20 GHz 135 2 GHz 20 GHz


Attenuators - analog - Chip

5 GHz 25 GHz
INSERTION PHASE (degrees)

INSERTION PHASE (degrees)


5 GHz 25 GHz
10 GHz 90 10 GHz
90
45
45
0
0
-45
-45
-90
-90
-135
-135 -180

-180 -225
-3 -2.5 -2 -1.5 -1 -0.5 0 -3 -2.5 -2 -1.5 -1 -0.5 0
VCTRL 1 VCTRL 2

Input Return Loss Input Return Loss


Vctrl1 = Variable, Vctrl2 = -3V Vctrl1 = 0V, Vctrl2 = Variable
0 0

-10
-10
RETURN LOSS (dB)
RETURN LOSS (dB)

-20
-20
-30

-3.0 V
-3.0 V
-30 -1.6 V
-40 -1.6 V 0.0 V
0.0 V

-50 -40
2 6 10 14 18 22 26 30 2 6 10 14 18 22 26 30
FREQUENCY (GHz) FREQUENCY (GHz)

Output Return Loss Output Return Loss


Vctrl1 = Variable, Vctrl2 = -3V Vctrl1 = 0V, Vctrl2 = Variable
0 0
RETURN LOSS (dB)

RETURN LOSS (dB)

-10 -10

-20 -20

-3.0 V -3.0 V
-1.6 V -1.6 V
0.0 V 0.0 V

-30 -30
2 6 10 14 18 22 26 30 2 6 10 14 18 22 26 30
FREQUENCY (GHz) FREQUENCY (GHz)

Information furnished by Analog Devices is believed to be accurate and reliable. However, no


For price, delivery and to place For price, 20
delivery, andRoad,
to place orders: Analog Devices,
01824Inc.,
responsibility is assumed by Analog Devices for its use,orders:
nor for any Hittite Microwave
infringements Corporation,
of patents or other Alpha Chelmsford, MA
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
1-3 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Phone: 781-329-4700
Application
• Order online at www.analog.com
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are Application Support:
the property of their Phone: 978-250-3343
respective owners. or apps@hittite.com
HMC712
v01.0709
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 5 - 30 GHz
Input IP3 vs Input Power @ 10 GHz
Vctrl1 = Variable, Vctrl2 = -3V
60
Input IP3 vs. Input Power Over Frequency
Vctrl1 = -2.2V, Vctrl2 = -3V (Worst Case IP3)
40
1

Attenuators - analog - Chip


50
35

40
IP3 (dBm)

IP3 (dBm)
30
30
10 GHz
-3.0 V 15 GHz
-2.4 V 25 20 GHz
20 -2.2 V 25 GHz
-1.8 V
0.0 V

10 20
0 5 10 15 20 0 5 10 15 20
SINGLE TONE INPUT POWER (dBm) SINGLE TONE INPUT POWER (dBm)

Input IP3 vs. Input Power Over Temperature Attenuation vs. Frequency over Vctrl
@ 10 GHz, Vctrl1 = -2.2V, Vctrl2 = -3V Vctrl1 = Vctrl2
40 0

-10
ATTENUATION (dB)

35
-20
IP3 (dBm)

-30
+25 C
30 +85 C -3 V
-55 C -1.8 V
-40 -1.4 V
-0.8 V
0V

25 -50
0 5 10 15 20 2 9 16 23 30
SINGLE TONE INPUT POWER (dBm) FREQUENCY (GHz)

Attenuation vs. Vctrl over Temperature Attenuation vs. Input Power over Vctrl
@ 10 GHz, Vctrl1 = Vctrl2 Vctrl1 = Vctrl2
0 0

-10
-10
ATTENUATION (dB)
ATTENUATION (dB)

-20
+25 C
-20 +85 C
-40 C
-30

-30
-40 -3 V -.8 V
-1.8 V 0V
-1.4 V

-40 -50
-3 -2.5 -2 -1.5 -1 -0.5 0 0 5 10 15 20
CONTROL VOLTAGE (V) INPUT POWER (dBm)

Information furnished by Analog Devices is believed to be accurate and reliable. However, no


For price, delivery and to place orders: For price, 20
delivery, and to place orders: Analog
MADevices,
01824 Inc.,
responsibility is assumed by Analog Devices for its use, nor for anyHittite Microwave
infringements Corporation,
of patents or other Alpha Road, Chelmsford,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343 Fax: 978-250-3373
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Order
Phone: On-line at www.hittite.com
781-329-4700 • Order online at www.analog.com 1-4
Trademarks and registered trademarks are Application Support:
the property of their Phone: 978-250-3343
respective owners. Application Support: Phone: 1-800-ANALOG-D
or apps@hittite.com
HMC712
v01.0709
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 5 - 30 GHz

1 Input Return Loss, Vctrl1 = Vctrl2 Output Return Loss, Vctrl1 = Vctrl2
0 0
Attenuators - analog - Chip

-10 -10
RETURN LOSS (dB)

RETURN LOSS (dB)


-20 -20

-3.0 V
-30 -1.8 V -30 -3.0 V
0.0 V -1.8 V
0.0 V

-40 -40
2 6 10 14 18 22 26 30 2 6 10 14 18 22 26 30
FREQUENCY (GHz) FREQUENCY (GHz)

Input IP3 vs. Input Power Over


Vctrl @ 10 GHz, Vctrl1 = Vctrl2
60

50

40
IP3 (dBm)

30

20
-2.6 V
-2.2 V
-1.8 V
10 -1.4 V
0V

0
0 5 10 15 20
SINGLE TONE INPUT POWER (dBm)

Absolute Maximum Ratings Control Voltages


RF Input Power +30 dBm Vctrl1 -3 to 0V @ 10 µA
Control Voltage Range +1 to -5V Vctrl2 -3 to 0V @ 10 µA
Channel Temperature 150 °C
Thermal Resistance
64 °C/W
(Channel to die bottom)
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C

ELECTROSTATIC SENSITIVE DEVICE


OBSERVE HANDLING PRECAUTIONS

Information furnished by Analog Devices is believed to be accurate and reliable. However, no


For price, delivery and to place For price, 20
delivery, andRoad,
to place orders: Analog Devices,
01824Inc.,
responsibility is assumed by Analog Devices for its use,orders:
nor for any Hittite Microwave
infringements Corporation,
of patents or other Alpha Chelmsford, MA
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
1-5 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Phone: 781-329-4700
Application
• Order online at www.analog.com
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are Application Support:
the property of their Phone: 978-250-3343
respective owners. or apps@hittite.com
HMC712
v01.0709
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 5 - 30 GHz

Outline Drawing 1

Attenuators - analog - Chip


Die Packaging Information [1]
1. ALL DIMENSIONS ARE IN INCHES (MILLIMETERS).
Standard Alternate 2. TYPICAL BOND PAD IS .004” SQUARE.
3. TYPICAL BOND PAD SPACING IS .006” CENTER TO
GP-2 (Gel Pack) [2]
CENTER EXCEPT AS NOTED.
[1] Refer to the “Packaging Information” section for die 4. BACKSIDE METALIZATION: GOLD
packaging dimensions. 5. BACKSIDE METAL IS GROUND
[2] For alternate packaging information contact Hittite 6. BOND PAD METALIZATION: GOLD
Microwave Corporation.

Information furnished by Analog Devices is believed to be accurate and reliable. However, no


For price, delivery and to place orders: For price, 20
delivery, and to place orders: Analog
MADevices,
01824 Inc.,
responsibility is assumed by Analog Devices for its use, nor for anyHittite Microwave
infringements Corporation,
of patents or other Alpha Road, Chelmsford,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343 Fax: 978-250-3373
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Order
Phone: On-line at www.hittite.com
781-329-4700 • Order online at www.analog.com 1-6
Trademarks and registered trademarks are Application Support:
the property of their Phone: 978-250-3343
respective owners. Application Support: Phone: 1-800-ANALOG-D
or apps@hittite.com
HMC712
v01.0709
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 5 - 30 GHz

1 Pad Descriptions
Pad Number Function Description Interface Schematic
Attenuators - analog - Chip

1 RFIN

This pad is DC coupled and matched to 50 Ohms.


A blocking capacitor is required if RF line potential
is not equal to 0V.

2 RFOUT

3 Vctrl2 Control Voltage 2

4 Vctrl1 Control Voltage 1

GND Die bottom must be connected to RF/DC ground.

Assembly Diagram

Information furnished by Analog Devices is believed to be accurate and reliable. However, no


For price, delivery and to place For price, 20
delivery, andRoad,
to place orders: Analog Devices,
01824Inc.,
responsibility is assumed by Analog Devices for its use,orders:
nor for any Hittite Microwave
infringements Corporation,
of patents or other Alpha Chelmsford, MA
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
1-7 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Phone: 781-329-4700
Application
• Order online at www.analog.com
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are Application Support:
the property of their Phone: 978-250-3343
respective owners. or apps@hittite.com
HMC712
v01.0709
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 5 - 30 GHz

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 1


The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 0.102mm (0.004”) Thick GaAs MMIC

Attenuators - analog - Chip


50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina Wire Bond
thin film substrates are recommended for bringing RF to and from the chip 0.076mm
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be (0.003”)

used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
RF Ground Plane
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is 0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm to 0.152 mm (3 to 6 mils).
Figure 1.

Handling Precautions
Follow these precautions to avoid permanent damage. 0.102mm (0.004”) Thick GaAs MMIC
Storage: All bare die are placed in either Waffle or Gel based ESD protec- Wire Bond
tive containers, and then sealed in an ESD protective bag for shipment. 0.076mm
Once the sealed ESD protective bag has been opened, all die should be (0.003”)

stored in a dry nitrogen environment.


Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems. RF Ground Plane

Static Sensitivity: Follow ESD precautions to protect against ESD


strikes. 0.150mm (0.005”) Thick
Moly Tab
Transients: Suppress instrument and bias supply transients while bias is 0.254mm (0.010”) Thick Alumina
applied. Use shielded signal and bias cables to minimize inductive pick- Thin Film Substrate

up. Figure 2.

General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom-
mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).

Information furnished by Analog Devices is believed to be accurate and reliable. However, no


For price, delivery and to place orders: For price, 20
delivery, and to place orders: Analog
MADevices,
01824 Inc.,
responsibility is assumed by Analog Devices for its use, nor for anyHittite Microwave
infringements Corporation,
of patents or other Alpha Road, Chelmsford,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343 Fax: 978-250-3373
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Order
Phone: On-line at www.hittite.com
781-329-4700 • Order online at www.analog.com 1-8
Trademarks and registered trademarks are Application Support:
the property of their Phone: 978-250-3343
respective owners. Application Support: Phone: 1-800-ANALOG-D
or apps@hittite.com

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