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EF
= 2k 2
conduction band ε = EG +
2me
= 2k 2
valence band ε = −
2mh
Optical absorption
Excitation promotes an
electron from the valence
band to conduction band.
An empty state left in valence
band is known as a hole.
= 2k 2 ⎛ = 2k 2 ⎞
Δε = EG + − ⎜⎜ − ⎟⎟
2me ⎝ 2mh ⎠
Absorption above
⎛ = 2k 2 ⎞ = 2k 2
Δε = ⎜⎜ EG + ⎟⎟ + the band gap is
⎝ 2me ⎠ 2mh
strong ~ 106 m-1
Hole picture
Remove one electron from a filled band and electricity can be
conducted by the movement of all of the electrons present.
The sum of this motion is equivalent to one positively
charged particle: a hole
Effective masses
Force accelerates the electron or hole:
∂v g 1 ∂ 2ε 1 ∂ 2ε ∂k ∂k
= = but F = =
∂t = ∂k ∂t = ∂k 2 ∂t ∂t
∂v g 1 ∂ 2ε F
= 2 2 F =
∂t = ∂k m*
Effective mass:
1 1 ∂ 2ε
Negative for holes unless = 2
we say charge is positive
m* = ∂k 2
0
x1/ 2 e − x dx , with x =
k BT
3/ 2 ⎛ μ − EG ⎞ ⎛ μ − EG ⎞
⎛m k T ⎞ ⎜⎜ ⎟⎟ ⎜⎜ ⎟⎟
n = 2 ⎜⎜ e B 2 ⎟⎟ e ⎝ k BT ⎠
= NC e ⎝ k BT ⎠
⎝ 2π = ⎠
Effective number of conduction band states at ε = Eg
3/ 2 ⎛ −μ ⎞ 0 ε
⎜⎜ ⎟⎟
1 ⎛ 2mh ⎞
p = ⎜ ⎟ ⎝ k BT ⎠
∫ (−ε ) dε
1/ 2 k BT
e e
2π 2 ⎝ = 2 ⎠ −∞
⎛ −μ ⎞ ∞
− εe ε
3/ 2 ⎜⎜ ⎟⎟
1 ⎛ 2mh k BT ⎞
p = ⎜
2π 2 ⎝ = 2 ⎠
⎟ e ⎝ k BT
∫
⎠
0
x1/ 2 e − x dx , with x =
k BT
= h
k BT
3/ 2 ⎛ −μ ⎞ ⎛ −μ ⎞
⎛m k T ⎞ ⎜⎜ ⎟⎟ ⎜⎜ ⎟⎟
p = 2 ⎜⎜ h B 2 ⎟⎟ e ⎝ k BT ⎠
= NV e ⎝ k BT ⎠
⎝ 2π = ⎠
⎝ 2π = ⎠
Intrinsic Semiconductors
A semiconductor is said to be intrinsic if it is undoped, and
the only source of electrons and holes is by thermal
excitation from the valence band to the conduction band.
In this case:
⎛ − EG ⎞ 3/ 2 ⎛ − EG ⎞
⎜⎜ ⎟⎟
⎛ k T ⎞ ⎜⎜ ⎟⎟
n = p = ni = N C NV e ⎝ 2 k BT ⎠
= 2 ⎜⎜ B 2 ⎟⎟ (me mh )
3/ 4
e ⎝ 2 k BT ⎠
⎝ 2π = ⎠
Shallow Donors
Impurity binding looks like a hydrogen atom
Binding energy e 4 me* me* / me
R =
*
= R0
2(4πε r ε 0= ) 2 εr2
Temperature
dependent density and
chemical potential
Density is constant in
region around room
temperature
p-n junction
• Unbiased junction • Forward bias of V
n ∼ Nc n ∼ Nc
eV
p ∼ Nv
(i) p → n j p→n = e
e
NC e k T B
τ
EG
D −
(ii) n → p j e
n→ p = e NC e k BT
τ
EG
D −
(iii) Total je
= e NC e k BT
(1 − 1) = 0
τ
Total
τ
− EG + eV
D
(ii) n → p j e
n→ p = e NC e k BT
τ
EG eV eV
D −
(iii) Total je
= e NC e k BT
(e k BT
− 1) = I 0 (e k BT
− 1)
τ
Total
• Anisotropic Materials
• Artificial layered structures -
Quantum Wells and
Superlattices
Heterojunctions
Energy levels for 2 different Energy line up at junction of
semiconductors two (undoped) materials
E = En + =2k⊥2/2m*
↑ ↑
1-D 2-D
2
= 2 ⎛ nπ ⎞ = 2 k ⊥2 n=1
En = ⎜ ⎟ +
2m *⎝ L ⎠ 2m *
∴ α ~ ε1/2
Semiconductor
lasers
Forward biased p-n
junction
• Epitaxy - maintaining
crystal structure of the
‘substrate’ - which is a
single crystal