IGBT - Field Stop, Trench

1200 V, 40 A

FGH40T120SMD,
FGH40T120SMD-F155
Description
Using innovative field stop trench IGBT technology, www.onsemi.com
ON Semiconductor’s new series of field stop trench IGBTs offer
the optimum performance for hard switching application such as solar C
inverter, UPS, welder and PFC applications.

Features
• FS Trench Technology, Positive Temperature Coefficient G
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A E
• 100% of the Parts tested for ILM(1)
• High Input Impedance E
C
G
• These Devices are Pb−Free and are RoHS Compliant

Applications
• Solar Inverter, Welder, UPS & PFC applications
TO−247−3LD TO−247−3LD
CASE 340CK CASE 340CH

MARKING DIAGRAM

$Y&Z&3&K
FGH40T120
SMD

$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FGH40T120SMD = Specific Device Code

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

© Semiconductor Components Industries, LLC, 2017 1 Publication Order Number:

July, 2021 − Rev. 5 FGH40T120SMD/D
 FGH40T120SMD, FGH40T120SMD−F155

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Description Symbol Ratings Unit
Collector to Emitter Voltage VCES 1200 V
Gate to Emitter Voltage VGES ±25 V
Transient Gate to Emitter Voltage ±30 V
Collector Current TC = 25°C IC 80 A
Collector Current TC = 100°C 40 A
Clamped Inductive Load Current TC = 25°C ILM (Note 1) 160 A
Pulsed Collector Current ICM (Note 2) 160 A
Diode Continuous Forward Current TC = 25°C IF 80 A
Diode Continuous Forward Current TC = 100°C 40 A
Diode Maximum Forward Current IFM 240 A
Maximum Power Dissipation TC = 25°C PD 555 W
Maximum Power Dissipation TC = 100°C 277 W
Operating Junction Temperature TJ −55 to +175 °C
Storage Temperature Range Tstg −55 to +175 °C
Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds TL 300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Vcc = 600 V,VGE = 15 V, IC = 160 A, RG = 10 W , Inductive Load
2. Limited by Tjmax

THERMAL CHARACTERISTICS
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction to Case RJC(IGBT) − 0.27 °C/W
Thermal Resistance, Junction to Case RJC(Diode) − 0.89 °C/W
Thermal Resistance, Junction to Ambient RJA − 40 °C/W

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking Device Package Reel Size Tape Width Quantity
FGH40T120SMD FGH40T120SMD TO−247−3 − − 30
(PB−Free)

FGH40T120SMD FGH40T120SMD−F155 TO−247−3 − − 30

(Pb−Free)

ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)

Parameter Symbol Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 250 A 1200 − − V
Collector Cut−Off Current ICES VCE = VCES, VGE = 0 V − − 250 A
G−E Leakage Current IGES VGE = VGES, VCE = 0 V − − ±400 nA
ON CHARACTERISTICs
G−E Threshold Voltage VGE(th) IC = 40 mA, VCE = VGE 4.9 6.2 7.5 V
Collector to Emitter Saturation Voltage VCE(sat) IC = 40 A, VGE = 15 V, TC = 25°C − 1.8 2.4 V
IC = 40 A, VGE = 15 V, TC = 175°C − 2.0 − V

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 FGH40T120SMD, FGH40T120SMD−F155

ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued)
Parameter Symbol Test Conditions Min Typ Max Unit

DYNAMIC CHARACTERISTICS
Input Capacitance Cies VCE = 30 V, VGE = 0 V, f = 1 MHz − 4300 − pF
Output Capacitance Coes − 180 − pF
Reverse Transfer Capacitance Cres − 100 − pF
SWITCHING CHARACTERISTICS
Turn−On Delay Time td(on) VCC = 600 V, IC = 40 A, − 40 − ns
RG = 10  VGE = 15 V,
Rise Time tr Inductive Load, TC = 25°C − 47 − ns
Turn−Off Delay Time td(off) − 475 − ns
Fall Time tf − 10 − ns
Turn−On Switching Loss Eon − 2.7 − mJ
Turn−Off Switching Loss Eoff − 1.1 − mJ
Total Switching Loss Ets − 3.8 − mJ
Turn−On Delay Time td(on) VCC = 600 V, IC = 40 A, − 40 − ns
RG = 10  VGE = 15 V,
Rise Time tr Inductive Load, TC = 175°C − 55 − ns
Turn−Off Delay Time td(off) − 520 − ns
Fall Time tf − 50 − ns
Turn−On Switching Loss Eon − 3.4 − mJ
Turn−Off Switching Loss Eoff − 2.5 − mJ
Total Switching Loss Ets − 5.9 − mJ
Total Gate Charge Qg VCE = 600 V, IC = 40 A, VGE = 15 V − 370 − nC
Gate to Emitter Charge Qge − 23 − nC
Gate to Collector Charge Qgc − 210 − nC

ELECTRICAL CHARACTERISTICS OF THE DIODE (TJ = 25°C unless otherwise noted)

Parametr Symbol Test Conditions Min Typ Max Unit
Diode Forward Voltage VFM IF = 40 A, TC = 25°C − 3.8 4.8 V
IF = 40 A, TC = 175°C − 2.7 − V
Diode Reverse Recovery Time trr VR = 600 V, IF = 40 A, − 65 − ns
diF/dt = 200 A/s, TC = 25°C
Diode Peak Reverse Recovery Current Irr − 7.2 − A
Diode Reverse Recovery Charge Qrr − 234 − nC
Diode Reverse Recovery Time trr VR = 600 V, IF = 40 A, − 200 − ns
diF/dt = 200 A/s, TC = 175°C
Diode Peak Reverse Recovery Current Irr − 18.0 − A
Diode Reverse Recovery Charge Qrr − 1800 − nC

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 FGH40T120SMD, FGH40T120SMD−F155

TYPICAL PERFORMANCE CHARACTERISTICS

300 300
o o
TC = 25 C 20V 17V 15V TC = 175 C 20V 17V

250 250 15V

Collector Current, IC [A]

Collector Current, IC [A]

200 200

12V
150 150
12V

100 100
VGE =10V VGE=10V
50 50

0 0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10
Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage, VCE [V]

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

4
160 Common Emitter
Common Emitter
VGE = 15V
VG E = 15V

Collector Emitter Voltage, VCE [V]

o
TC = 25 C
120 o
Collector Current, IC [A]

TC = 175 C −−−
3
80A

80

40A
2

40 IC=20A

1
0 25 50 75 100 125 150 175
012345
Collector−Emitter Voltage, VCE [V] Case Temperature TC [ oC]

Figure 3. Typical Saturation Voltage Figure 4. Saturation Voltage vs. Case

Characteristics Temperature at Variant Current Level

20 20
Common Emitter Common Emitter
TC = 25 oC TC = 175 oC
16 16
Collector Emitter Voltage, V CE [V]
Collector Emitter Voltage, VCE [V]

80A

80A
12 12
40A
40A
8 8

IC=20A
IC=20A
4 4

0 0
0 4 8 12 16 20 0 4 8 12 16 20
Gate−Emitter Voltage, VGE[V] Gate−Emitter Voltage, VGE [V]

Figure 5. Saturation Voltage vs VGE Figure 6. Saturation Voltage vs VGE

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 FGH40T120SMD, FGH40T120SMD−F155

TYPICAL PERFORMANCE CHARACTERISTICS

6000 200
Common Emitter VCC = 600V
VGE = 0V , f = 1MHz load Current : peak of square wave
5000 Ciss TC = 25 C
o
160

Collector Current, I C [A]

4000
Cappacitance [pF]

120 o
TC = 100 C
3000
80
2000
Coss
40 Duty cycle : 50%
1000 Crss T = 100 C
o
C
Powe Dissipation = 277 W
0
1 10 1k 10k 100k 1M
Collector−Emitter Voltage, VCE [V] Switching Frequency, f [Hz]
Figure 7. Capacitance Characteristics Figure 8. Load Current vs. Frequency

1000

1000
tr
100 td(off)
Switching Time [ns]

Switching Time [ns]

100
td(on)

Common Emitter tf
10
VCC = 600V, VGE = 15V
IC = 40A 10
o Common Emitter
TC = 25 C
VCC = 600V, VGE = 15V, IC = 40A
o
TC = 175 C
TC = 25o C , TC = 175o C
1 1
0 10 20 30 40 50 0 10 20 30 40 50 60 70
Gate Resistance, RG [ W] Gate Resistance, RG [W]
Figure 9. Turn−On Characteristics vs. Gate Figure 10. Turn−Off Characteristics vs.
Resistance Collector Current

tr
10
Eon
100
Switching Time [ns]
Switching Loss [mJ]

Eoff
t d(on)
1
Common Emitter
VCC = 600V, VGE = 15V
Common Emitter
IC = 40A VGE = 15V, RG = 10W
o o
TC = 25 C TC = 25 C
0.1 10
o o
TC = 175 C TC = 175 C

0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80
Gate Resistance , RG [ W] Collector Current, I C [A]

Figure 11. Switching Loss vs. Gate Resistance Figure 12. Turn−On Characteristics vs.
Collector Current

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 FGH40T120SMD, FGH40T120SMD−F155

TYPICAL PERFORMANCE CHARACTERISTICS

1000 30

td(off) 10 Eon

100
Switching Time [ns]

Switching Loss [mJ]

Eoff

1
tf
10 Common Emitter
VGE = 15V, RG = 10 W
Common Emitter o
TC = 25 C
VGE = 15V, RG = 10 W
o
o o TC = 175 C
TC = 25 C , TC = 175 C
1 0.1
20 40 60 80 10 20 30 40 50 60 70 80
Collector Current, I C [ A] Collector Current, I C [A]

Figure 13. Turn−Off Characteristics vs. Figure 14. Switching Loss vs. Collector
Collector Current Current
15
IcMAX (Pulsed)
100
12 10s
200V 400V
IcMAX (Continuous) 100 s
Gate Emitter Voltage, V GE [V]

VCC = 600V Collector Current, Ic [A]

1ms
10 10 ms
9
DC Operation

6 1

Single Nonrepetitive
0.1 Pulse Tc = 25 oC
3
Common Emitter Curves must be derated
o linearly with increase
TC = 25 C in temperature
0 0.01
0 50 100 150 200 250 300 350 400 0.1 1 10 100 1000
Gate Charge, Q g [nC] Collector−Emitter Voltage, VCE [V]

Figure 15. Gate Charge Characteristics Figure 16. SOA Characteristics

10

diF/dt = 200 A/ s
Reverse Recovery Currnet, I rr [A]

100
Forward Current, I F [A]

diF /dt = 100 A/ s

10

o
TC = 25 C VR = 600 V, IF = 40 A
o
TC = 175 C −−− TC = 25o C
1
0 1 2 3 4 5
Forward Voltage, VF [V] Foward Current, IF [A]

Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current

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 FGH40T120SMD, FGH40T120SMD−F155

TYPICAL PERFORMANCE CHARACTERISTICS

100 400
VR = 600 V, IF = 40 A
TC = 25oC
Reverse Recovery Time, t rr [ns]

90

Stored Recovery Charge, Qrr [nC]

300
di F /dt = 200 A/ s
80

200
diF/dt = 100 A/ s diF /dt = 100 A/ s
70

di F/dt = 200 A/ s 100

60
VR = 600 V, IF = 40 A
TC = 25oC
50 0
0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80
Forward Current, I F [A ] Forwad Current, I F [A]
Figure 19. Reverse Recovery Time Figure 20. Stored Charge

1
Thermal Response [Zthjc]

0.5
0.1
0.3

0.1
PDM
0.01 0.05
t1
t2
0.02
Duty Factor, D = t1/t2
0.01 single pulse Peak Tj = Pdm x Zthjc + TC
1E−3
1E−6 1E−5 1E−4 1E−3 0.01 0.1 1
Rectangular Pulse Duration [sec]

Figure 21. Transient Thermal Impedance of IGBT

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−247−3LD
CASE 340CH
ISSUE A
DATE 09 OCT 2019

GENERIC
MARKING DIAGRAM*

XXXXXXXXX
AYWWG XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

*This information is generic. Please refer to

device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON13853G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−247−3LD PAGE 1 OF 1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.

© Semiconductor Components Industries, LLC, 2018 www.onsemi.com

MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−247−3LD SHORT LEAD

CASE 340CK
ISSUE A
DATE 31 JAN 2019
A P1
A E
A2
P D2

Q
E2
S
D1
D B E1

2
1 2 3

L1
A1

b4 L

c
(3X) b
(2X) b2 0.25 M B A M
MILLIMETERS
(2X) e DIM
MIN NOM MAX
A 4.58 4.70 4.82
A1 2.20 2.40 2.60
A2 1.40 1.50 1.60
b 1.17 1.26 1.35
b2 1.53 1.65 1.77
b4 2.42 2.54 2.66
c 0.51 0.61 0.71
GENERIC D 20.32 20.57 20.82
MARKING DIAGRAM*
D1 13.08 ~ ~
AYWWZZ D2 0.51 0.93 1.35
XXXXXXX E 15.37 15.62 15.87
XXXXXXX E1 12.81 ~ ~
E2 4.96 5.08 5.20
XXXX = Specific Device Code e ~ 5.56 ~
A = Assembly Location
Y = Year L 15.75 16.00 16.25
WW = Work Week L1 3.69 3.81 3.93
ZZ = Assembly Lot Code
P 3.51 3.58 3.65
*This information is generic. Please refer to
device data sheet for actual part marking. P1 6.60 6.80 7.00
Pb−Free indicator, “G” or microdot “G”, may Q 5.34 5.46 5.58
or may not be present. Some products may
not follow the Generic Marking. S 5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON13851G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−247−3LD SHORT LEAD PAGE 1 OF 1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.

© Semiconductor Components Industries, LLC, 2018 www.onsemi.com

 onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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