Birla Institute of Technology & Science, Pilani

Work-Integrated Learning Programmes Division

Second Semester 2023-2024
End-Semester Test (EC-3 Regular)

Course No. : MEL ZG512

Course Title : OPTOELECTRONIC DEVICES, CIRCUIT & SYSTEMS
Pattern of Exam : Scan and Upload
Nature of Exam : Open Book
Weightage : 40% No. of Pages =5
Duration : 2 Hours No. of Questions = 7
Date of Exam : Saturday, 25/11/2023 (EN)
Note:
1. Please follow all the Instructions to Candidates given on the cover page of the answer book.
2. All parts of a question should be answered consecutively. Each answer should start from a fresh page.
3. Assumptions made if any, should be stated clearly at the beginning of your answer.

Q.1 Set. (A) If the average operating wavelength of a laser is 0.5 µm with 1000 K temperature.
The refractive index of laser is 1.38 with 1.3 × 104 longitudinal modes. Determine the optical
spacing between mirrors. [3M]
Q.1 Set. (B) An LED emits light having a peak wavelength of 890 nm and has a radiative
recombination time of 100 ns. If the bulk recombination life time is 130 ns and drive current
is 14 mA, determine the non-radiative recombination time. [3M]

Q.1 Set. (C) An LED has quantum efficiency of 3%. Find the power radiated by it at the
operating wavelength of 670 nm. Assume typical current as 50 mA. [3M]

Q.2 Set. (A) A typical optical fiber cable has specification of refractive index of 1.6 and 1.4 for
the core and the cladding, respectively. Determine the following: [5M]
(a) the critical angle of incidence (b) θ2 for θ1 = 300

(c) θ2 for θ1 = 750

Q.2 Set. (B) A typical optical fiber cable has specification of refractive index of 1.9 and 1.6 for
the core and the cladding, respectively. Determine the following: [5M]
(a) the critical angle of incidence (b) θ2 for θ1 = 400

(c) θ2 for θ1 = 750

Q.2 Set. (C) A typical optical fiber cable has specification of refractive index of 1.8 and 1.6 for
the core and the cladding, respectively. Determine the following: [5M]
(a) the critical angle of incidence (b) θ2 for θ1 = 450
(c) θ2 for θ1 = 750

Q.3 Set. (A) A p–i–n photodetector produces one electron–hole pair for every two photons
incident on it on an average at l = 850 nm. Assume that all the photo-generated electrons are
collected. Determine the following: [5M]
(a) The quantum efficiency of the photodiode
(b) The maximum band gap energy of the semiconductor in eV (assuming the incident
wavelength to be a long-wavelength cut-off)
(c) The average photocurrent when the incident optical power is 10 µW.

Q.3 Set. (B) A p–i–n photodetector produces one electron–hole pair for every two photons
incident on it on an average at l = 650 nm. Assume that all the photo-generated electrons are
collected. Determine the following: [5M]
(a) The quantum efficiency of the photodiode
 (b) The maximum band gap energy of the semiconductor in eV (assuming the incident
wavelength to be a long-wavelength cut-off)
(c) The average photocurrent when the incident optical power is 8 µW.

Q.3 Set. (C) A p–i–n photodetector produces one electron–hole pair for every two photons
incident on it on an average at l = 750 nm. Assume that all the photo-generated electrons are
collected. Determine the following: [5M]
(a) The quantum efficiency of the photodiode
(b) The maximum band gap energy of the semiconductor in eV (assuming the incident
wavelength to be a long-wavelength cut-off)
(c) The average photocurrent when the incident optical power is 9 µW.

Q.4 Set. (A) A 100% quantum efficiency photo-diode has an area of 4 cm2 and it is
illuminated by monochromatic light with the wavelength of 680 nm and with a power density
of 1500 W/m2, at 300K, the open circuit voltage is 683V. calculate the reverse saturation
current. [5M]

Q.4 Set. (B) A 80% quantum efficiency photo-diode has an area of 6 cm2 and it is illuminated
by monochromatic light with the wavelength of 680 nm and with a power density of 1500
W/m2, at 300K, the open circuit voltage is 683V. calculate the reverse saturation current.
[5M]

Q.4 Set. (C) A 90% quantum efficiency photo-diode has an area of 5 cm2 and it is illuminated
by monochromatic light with the wavelength of 680 nm and with a power density of 1500
W/m2, at 300K, the open circuit voltage is 683V. calculate the reverse saturation current.
[5M]

Q.5 Set. (A) Below graph shows the variation of absorption coefficient when the voltage is
applied. Use the graph to determine below parameters for the modulator which is of length =
4 µm. absorption coefficient at no applied voltage is 0.5x103 and at applied voltage is 4x103
respectively. [5M]

a. Extinction ratio
b. Insertion Loss
c. Modulation efficiency

Q.5 Set. (B) Below graph shows the variation of absorption coefficient when the voltage is
applied. Use the graph to determine below parameters for the modulator which is of length =
 6 µm. absorption coefficient at no applied voltage is 103 and at applied voltage is 4x103
respectively. [5M]

a. Extinction ratio
b. Insertion Loss
c. Modulation efficiency

Q.5 Set. (C) Below graph shows the variation of absorption coefficient when the voltage is
applied. Use the graph to determine below parameters for the modulator which is of length =
5 µm. absorption coefficient at no applied voltage is 103 and at applied voltage is 3x103
respectively. [5M]

a. Extinction ratio
b. Insertion Loss
c. Modulation efficiency

Q.6 Set. (A) A silicon sample is illuminated by a 20mW, photon source. The source has a
single frequency and emitting photons with energy 2 eV. The absorption coefficient of si at
hv = 2 eV is 4000 cm-1. Find the distance at which the power observed will be half of the
incident power. Determine the reflecting coating thickness that is required to increase the
absorption. The refractive index of the reflective coating material is [5M]

Q.6 Set. (B) A silicon sample is illuminated by a 15mW, photon source. The source has a
single frequency and emitting photons with energy 2 eV. The absorption coefficient of si at
hv = 1.8 eV is 3000 cm-1. Find the distance at which the power observed will be ¼ of the
incident power. Determine the reflecting coating thickness that is required to increase the
absorption. The refractive index of the reflective coating material is [5M]
Q.6 Set. (C) A silicon sample is illuminated by a 18mW, photon source. The source has a
single frequency and emitting photons with energy 2 eV. The absorption coefficient of si at
hv = 1.9 eV is 3500 cm-1. Find the distance at which the power observed will be 1/3 of the
incident power. Determine the reflecting coating thickness that is required to increase the
absorption. The refractive index of the reflective coating material is [5M]

Q.7 Set. (A) A solar cell under AM1 illumination produces a short circuit current of 15 mA.
Under the above conditions determine the Voc. What is the maximum power absorbed by the
solar cell. Calculate the Fill Factor of the solar cell.
Given: ni (at 300k) = 1.5 x 1010 cm-3. Acceptor and donor doping concertation are 3 x 1016 cm-
3
and 1020 cm-3 respectively. Diffusion length of hole and electrons are 10-3.5 cm and 2 x10-2
cm respectively. Mean carrier life time are τe = 2 x 10-5 sec and τh = 10-6 sec are respectively.
Junction area A = 1 cm-2.

[4M + 5M + 3M = 12M]

Q.7 Set. (B) A solar cell under AM1 illumination produces a short circuit current of 15 mA.
Under the above conditions determine the Voc. What is the maximum power absorbed by the
solar cell. Calculate the Fill Factor of the solar cell.
Given: ni (at 300k) = 1.5 x 1010 cm-3. Acceptor and donor doping concertation are 2 x 1016 cm-
3
and 2 x 1020 cm-3 respectively. Diffusion length of hole and electrons are 10-2.5 cm and 2 x10-
2
cm respectively. Mean carrier life time are τe = 10-5 sec and τh = 10-6 sec are respectively.
Junction area A = 1 cm-2.

[4M + 5M + 3M = 12M]
Q.7 Set. (C) A solar cell under AM1 illumination produces a short circuit current of 15 mA.
Under the above conditions determine the Voc. What is the maximum power absorbed by the
solar cell. Calculate the Fill Factor of the solar cell.
Given: ni (at 300k) = 1.5 x 1010 cm-3. Acceptor and donor doping concertation are 2 x 1016 cm-
3
and 1020 cm-3 respectively. Diffusion length of hole and electrons are 10-3.5 cm and 2.5 x10-2
cm respectively. Mean carrier life time are τe = 10-5 sec and τh = 10-6 sec are respectively.
Junction area A = 1 cm-2.

[4M + 5M + 3M = 12M]