Professional Documents
Culture Documents
Memristors
Memristors
Introduction
Theoretically, Memristors, a concatenation of “memory resistors”, are a
type of passive circuit elements that maintain a relationship between
the time integrals of current and voltage across a two terminal
element.
Electronic symbol
Simplified Definition
• It is the consolidation of two words namely, MEMORY and RESISTOR.
• As the name suggests its resistance (dV/dI) depends on the charge
that HAD flowed through the circuit.
• When current flows in one direction the resistance increases, in
contrast when the current flows in opposite direction the resistance
decreases.
• However resistance cannot go below zero.
• When the current is stopped the resistance remains in the value that
it had earlier.
• It means MEMRISTOR “REMEMBERS” the current that had last flowed
through it.
History
Professor Leon Chua
If the current is turned OFF, the pipes diameter stays same until it is switched ON again
It Remembers what current has flowed through it
Fundamental Passive Linear Elements
Background
2 nm PT TiO(2-x) PT
(-)ve TiO2 (+)ve
3
nm
Reduced
Oxidized
• TiO2-x region doped with oxygen vacancies
• In the TiO2-x region, the ratio between titanium atoms and oxygen atoms has been
altered such that there is less oxygen than in a regular TiO2 sample
• The resistance of the device when w = D will be designated RON and when w = 0 the
resistance will be designated as ROFF .
Resistance Naming Convention Effective Electrical Structure of the HP Memristor
M(q(t)) = ROFF . 1- (
μv RON
D 2 q(t) )
• where ROFF represents the high resistance state
• RON represents the low resistance state
• μv represents the mobility of dopants in the thin film
• D represents the film thickness.
An array of 17 purpose-built
oxygen-depleted titanium
dioxide memristors built at HP
Labs, imaged by an atomic
force microscope.