MICROWAVE

ENGINEERING
BY
S.PRABHU DAS
Associate professor
ECE Department
 UNIT - 3
3.0 Introduction to Microwave ,
3.1.Microwave Spectrum and Bands,
3.2.Advantages,Disadvantages and Applications of Microwaves.
3.3.Waveguides
3.4.Propagation of Waves in Waveguides
3.5.Modes of Operation in Waveguides
3.6.TE and TM
3.7.Different Microwave Active and Passive Devices
3.8.Definitions
3.9.Waveguide Junctions
3.10.Microwave Bends
3.11.Microwave Tapers
3.12.Microwave Solid State Devices
 UNIT - 3
3.13.Applications of IMPATT,TRAPATT and BARITT Diodes
3.14.Gunn Diode
3.15.IMPATT Diode
3.16.TRAPATT Diode
3.17.Working Principle of Reflex Klystron
3.18.Working Principle of Magnetron
3.19.Working Principle of Travelling Wave Tube(TWT)
 Introduction
• Micro refers to microns with respect to wavelength.
So, Microwaves are Short wave Signals.
• Microwaves ranges from 300 MHz to 300 GHz.
• Microwaves have frequencies > 1 GHz approx.
• Most of the applications are during 1-40 GHz.
• Stray reactances are more important as frequency
increases
• Transmission line techniques must be applied to
short conductors like circuit board traces
• Device capacitance and transit time are important
• Cable losses increase: waveguides often used instead
MICROWAVE BANDS
IEEE/INDUSTRY STANDARDS
Electromagnetic spectrum
Infra Red Ultra Gamma-
Radio & TV Violet Rays

Microwaves
Microwaves
0.8 GHz X-Rays
to
1000 GHz

Non-ionising Radiation Ionising

(generally not so bad) Radiation
(generally bad)

1 101 102 103 104 105 106 107 108 109 1010 1011 1012 1013 1014 1015 1016 1017 1018 1019 1020 1021 1022

Frequency (Hertz)
 Advantages of Microwaves
• No cable needed
• Multiple Channels available
• Wide Bandwidth
 Disadvantages of Microwaves
• Line of Sight –not possible if obstacles like
buildings, hills etc. present between antennas.
• Signal Absorption by Atmosphere - Cause
Attenuation
• Towers are expensive to build
 APPLICATIONS OF MICROWAVES
• Communications: GSM(1.8-1.9GHz),Satellite
and Milliatary
• Remote Sensing: RADAR,SONAR,Telemetry
• Heating: Microwave Oven,Industrial Heating
• Medical Science: Drying, Moistoring, Diagnosis
 APPLICATIONS OF MICROWAVE ENGINEERING
• Antenna gain is proportional to the electrical size of the
antenna. At higher frequencies, more antenna gain is therefore
possible for a given physical antenna size, which has important
consequences for implementing miniaturized microwave
systems.
• More bandwidth can be realized at higher frequencies.
Bandwidth is critically important because available frequency
bands in the electromagnetic spectrum are being rapidly
depleted.
• Microwave signals travel by line of sight are not bent by the
ionosphere as are lower frequency signals and thus satellite
and terrestrial communication links with very high
capacities are possible.
• Various molecular, atomic, and nuclear resonances occur at
microwave frequencies, creating a variety of unique
applications in the areas of basic science, remote sensing,
medical diagnostics and treatment, and heating methods.
• Today, the majority of applications of microwaves are related to
radar and communication systems.
• Radar systems are used for detecting and locating targets and
for air traffic control systems, missile tracking radars,
automobile collision avoidance systems, weather prediction,
motion detectors, and a wide variety of remote sensing
systems.
• Satellite Dish
• Microwave communication systems handle a large fraction of
the world’s international and other long haul telephone, data
and television transmissions.
Microwave Antenna-Shrouded Dish Antenna
Microwave Antenna-Parabolic Satellite Antenna
Microwave Antenna-Sector Antennas
Microwave Ovens-Example
Magnetron
 Microwave Generation
Cavity Magnetron Valve
Waveguides
 Waveguides
• Hallow Pipe through which waves propagate
• Can be rigid or flexible
• High power handling capability
• Waveguides have very low loss
• Less attenuation
 Advantages of Waveguides
• Easy to Manufacture compared to Co-axial
Cables.
• Power Handling Capability 10 times greater than
Coaxial Cables powers.
• Propagation is by reflection of walls.
• Less Power loss compared to remaining
Transmission lines such as two wire,twisted pair
and coaxial lines.
PROPAGATION OF WAVES IN WAVEGUIDES
 PROPAGATION OF WAVES IN WAVEGUIDES
• The wave travels in zigzag path within the
waveguide and wave do not interfere with walls.
• Two consequences of Wave Propagation are
 Velocity of wave propagation through
waveguide always less than the velocity wave
propagation through free space.
 Wave can no longer be TEM
• The field is always maximum at the center of
waveguide.
 Waveguides - Types
• Waveguides have various cross sections
– Rectangular
– Circular
– Elliptical
 Waveguide to coax adapter
Rectangular waveguide

Waveguide bends E-tee

 Rectangular WaveGuide

Direction of Wave Propagation

 Rectangular WaveGuide-
Cutoff Frequency, fc
• Minimum Frequency of the wave to pass
through wavegude.
• It depends on waveguide dimensions a and b.
• It is given by fc = C/λc
where C=3x108 m/s
λc is cutoff wavelength given by
 Rectangular WaveGuide-
Cutoff Frequency, fc

• The dominant mode is the mode with lowest

cutoff frequency.
• It’s always TE10 for TE (m=1,n=0)
• For dominant mode TE10

then
Rectangular Waveguide-
Field Distribution
Circular Waveguide
Circular Waveguide-
Cutoff Frequency
 Circular Waveguide-
Cutoff Frequency
fc = C/λc

= C/1.7 d
• Circular waveguides are easier to manufacture
and easy to join
• But they occupies more space
 Modes in Waveguides
• TE (Ez=0) transverse electric, Hz exists
 In TE mode, the electric lines of flux are perpendicular to the
axis of the waveguide

• TM (Hz=0) transverse magnetic, Ez exists

 In TM mode, the magnetic lines of flux are perpendicular to
the axis of the waveguide.

• TEM (Ez=Hz=0) can’t propagate through Waveguide.

 TE and TM Modes
TE Mode

TM Mode
Field Patterns of TE and TM Modes
Field Patterns of TE and TM Modes
Sketches of Fields in modes
 Different Microwave Active and
Passive Devices
• Microwave Passive Devices are
1.Terminator 2.Attenuator 3.Filter
4.Coupler 5.Ferrite Devices
• Microwave Active Devices are
1.Detector 2.Multiplier 3.Mixer
4.Amplifier 5.Oscillator
 Definitions
• Dominant Mode
• Cutoff Frequency
• Guided Wavelength- Distance travelled by the
wave to undergo a phase shift of 2π radians.
λg = 2 π/β
 Definitions
• Phase Velocity: The velocity with which a
wave change its phase in a direction parallel to
walls of the waveguide. (Or) The rate at which
the wave changes its phase in terms of guide
wavelength. Vp= ω/β
 Definitions
• Group Velocity: The rate at which the wave
propagates through the waveguide. (or) The
velocity of group of waves in the direction
parallel to the conducting surface.
Vg= dω/dβ
 Waveguide Junctions
• Used to combine or to split two or more signals
• Generally T-shaped junctions are used.
• A T-Junction is interconnection of three
waveguides in the shape of ‘T’ letter.
• Types
1. H Plane Tee
2. E Plane Tee
3. E-H Plane Tee
MICROWAVE JUNCTIONS
SCATTERING MATRIX
H PLANE TEE
E- PLANE TEE
HYBRID OR MAGIC TEE
 APPLICATIONS OF MAGIC TEE

1.Measurement of Impedance

2.Magic Tee as a Mixer

3.Magic Tee as Duplexer

Microwave Bends
Microwave Tapers
Microwave Solid State Devices
 Introduction
• Semiconductor devices used for the detection, generation,
amplification, and control of electromagnetic radiation with
wavelengths from 30 cm to 1 mm (frequencies from 1 to 300
GHz). 
• Since 1985, the number and variety of microwave semiconductor
devices, used for wireless and satellite communication and
optoelectronics, have increased as new techniques, materials, and
concepts have been developed and applied.
• Passive microwave devices, such as pn and PIN junctions,
Schottky barrier diodes, and varactors, are primarily used for
detecting, mixing, modulating, or controlling microwave signals.
• Step-recovery diodes, transistors, tunnel diodes, and transferred
electron devices (TEDs) are active microwave devices that
generate power or amplify microwave signals
 Classification of Solid state Devices
• The classification of solid state Microwave devices can be done −
• Depending upon their electrical behavior
– Non-linear resistance type.
Example − Varistors (variable resistances)
– Non-Linear reactance type.
Example − Varactors (variable reactors)
– Negative resistance type.
Example − Tunnel diode, Impatt diode, Gunn diode
– Controllable impedance type.
Example − PIN diode
• Depending upon their construction
– Point contact diodes
– Schottky barrier diodes
– Metal Oxide Semiconductor devices MOSMOS
– Metal insulation devices
Applications
 TEDs
• The differences between microwave transistors and transferred
electron devices (TEDs) are fundamental.
• Transistors operate with either junctions or gates, but TEDs are
bulk devices having no junctions or gates.
• The majority of transistors are fabricated from elemental
semiconductors, such as silicon or germanium, whereas TEDs are
fabricated from compound semiconductors, such as gallium
arsenide (GaAs), indium phosphide (InP), or cadmium telluride
(CdTe).
• Transistors operate with "warm" electrons whose energy is not
much greater than the thermal energy (0.026 eV at room
temperature) of electrons in the semiconductor, whereas TEDs
operate with "hot" electrons whose energy is very much greater
than the thermal energy
 Gunn Diode
• Principle
• RWH Theory
• Characteristics
• Basic Modes of Operation
• Oscillation Modes.
Gunn Diode(GaAs Diode)- Principle
• The principle involved is to heat the carriers in
light mass , high mobility sub band with an
Electric Field ,so that the carriers can transfer
to a heavy mass low mobility higher energy
sub band when they have a higher enough
temperature.
 RWH (Two Valley) Theory
• Riddley-Watkins-Hilsium Theory

• This theory is for achieving negative differential

mobility in bulk semiconductors (GaAs) by
transferring electrons from high mobility energy
bands to low mobility energy bands.

• The carriers at this bands are called Hot Electrons.

RWH (Two Valley) Theory
RWH (Two Valley) Theory
RWH (Two Valley) Theory
Drift Velocity Vs Electric Field
RWH (Two Valley) Theory
 High Field Domain Formation
• A domain will start to form whenever the electric field in
a region of sample increases above the threshold
Electric field and will drift with the carrier stream
through the device.
• If the additional voltage is applied to a device containing
a domain, the domain will increase in size and absorb
more voltage than was added and the current will
decrease.
• Thus the negative differential mobility obtained.

and
Charge Accumulation
 Modes of Operation
Criterion for Classification
 Classification

• Gunn Oscillation Mode (1012 /cm2<noL<1014

/cm2)
• Stable Amplification Mode (noL<1012 /cm2)
• LSA Oscillation Mode (fL > 1014 cm/s)
• Bias circuit Oscillation Mode (Gunn/LSA with LF)
Gunn Diode Characteristics
 Gunn Oscillation Modes

• 1. Transit time domain Mode (fL = 107 cm/s)

 vd=vs, τo=τt and η=10%
• 2. Delayed Mode/Inhibited Mode (106 cm/s <
fL <107 cm/s)
 vd=vs, τo>τt ,E<Eth ,High Q and η=20%
• 3. Quenched Mode (fL > 2x107 cm/s)
 vd=vs, τo< τt ,E<Es ,produce oscillations and
η=13%
 LSA Mode(fL > 2x107 cm/s and High f)
• No sufficient time to form domain if E>Eth
• Most of the domains are with Negative
Conductance
• Any accumulation of charges collapses if E<E th
and conductor is uniformly doped
• Efficiency is about 20%
• vL = 5x106 cm/s, no/f=2x105
• P= ηVoIo
• Very sensitive to load conditions and fluctuations
 Stable Amplification Mode(noL<1012)

• Here the diode exhibits Amplification rather

than oscillations
• Negative conductance is utilized without
domain formation because of few carriers
• Depends on fL value different types of
amplification based various times.
Summary
 AVALANCHE TRANSIT TIME DEVICES

• Introduction,
• IMPATT and
• TRAPATT
• BARRITT Diodes – Principle of Operation and
Characteristics.
IMPATT DIODE
IMPATT DIODE
 IMPATT DIODE-OPERATION
• A voltage gradient when applied to the IMPATT diode,
results in a high current. A normal diode will eventually
breakdown by this. However, IMPATT diode is developed
to withstand all this.
• A high potential gradient is applied to back bias the
diode and hence minority carriers flow across the
junction.
 IMPATT DIODE-OPERATION
• Application of a RF AC voltage if superimposed on a high
DC voltage, the increased velocity of holes and electrons
results in additional holes and electrons by thrashing
them out of the crystal structure by Impact ionization.
• If the original DC field applied was at the threshold of
developing this situation, then it leads to the avalanche
current multiplication and this process continues. 
 IMPATT DIODE-OPERATION
• Due to this effect, the current pulse takes a phase shift
of 90°.
• However, instead of being there, it moves towards
cathode due to the reverse bias applied.
• The time taken for the pulse to reach cathode depends
upon the thickness of n+ layer, which is adjusted to
make it 90° phase shift. Now, a dynamic RF negative
resistance is proved to exist.
• Hence, IMPATT diode acts both as an oscillator and an
amplifier.
 IMPATT DIODE-
Output power &efficiency
 DISADVANTAGES
• It is noisy as avalanche is a noisy process
• Tuning range is not as good as in Gunn diodes
 APPLICATIONS
• Microwave oscillator
• Microwave generators
• Modulated output oscillator
• Receiver local oscillator
• Negative resistance amplifications
• Intrusion alarm networks 
• Police radar 
• Low power microwave transmitter 
• FM telecom transmitter 
• CW Doppler radar transmitter 
 TRAPATT DIODE
• The full form of TRAPATT diode is TRApped Plasma
Avalanche Triggered Transit diode.
• A microwave generator which operates between
hundreds of MHz to GHz. These are high peak power
diodes usually n+- p-p+ or p+-n-n+ structures with n-
type depletion region, width varying from 2.5 to 1.25
µm.
• The electrons and holes trapped in low field region
behind the zone, are made to fill the depletion region
in the diode. This is done by a high field avalanche
region which propagates through the diode.
TRAPATT DIODE
TRAPATT DIODE-OPERATION
 TRAPATT DIODE-OPERATION
• The figure shows above is a graph in which
 AB shows charging,
 BC shows plasma formation,
 DE shows plasma extraction,
 EF shows residual extraction, and
 FG shows charging.
 TRAPATT DIODE-OPERATION
• A: The voltage at point A is not sufficient for the avalanche
breakdown to occur. At A, charge carriers due to thermal generation
results in charging of the diode like a linear capacitance.
• A-B: At this point, the magnitude of the electric field increases.
When a sufficient number of carriers are generated, the electric
field is depressed throughout the depletion region causing the
voltage to decrease from B to C.
• C: This charge helps the avalanche to continue and a dense plasma
of electrons and holes is created. The field is further depressed so
as not to let the electrons or holes out of the depletion layer, and
traps the remaining plasma.
• D: The voltage decreases at point D. A long time is required to clear
the plasma as the total plasma charge is large compared to the
charge per unit time in the external current.
 TRAPATT DIODE-OPERATION
• E: At point E, the plasma is removed. Residual charges of
holes and electrons remain each at one end of the
deflection layer.
• E to F: The voltage increases as the residual charge is
removed.
• F: At point F, all the charge generated internally is
removed.
• F to G: The diode charges like a capacitor.
• G: At point G, the diode current comes to zero for half a
period. The voltage remains constant as shown in the
graph above.
• This state continues until the current comes back on and
the cycle repeats.
 APPLICATIONS
There are many applications of this diode.
Low power Doppler radars
Local oscillator for radars
Microwave beacon landing system
Radio altimeter
Phased array radar, etc.
 Limitations and Losses of conventional Tubes
at microwave frequencies
• Lead Inductance effect
• Inter-electrode Capacitance effect
• Transit Time Effect
• Gain-Bandwidth product Limitation
LOSSES :
• Effect due to RF Losses(skin depth,dielectric)
• Effect due to Radiation Losses
O-Type Tubes Classification
Two Cavity Klystron
 Klystron

Microwave Microwave
input Electron output
beam

Beam
Electron collector
Gun

Intermediate cavity
In a klystron:
1. The electron gun produces a flow of electrons .
2. The bunching cavities regulate the speed of the
electrons so that they arrive in bunches at the output
cavity.
3. The bunches of electrons excite microwaves in the
output cavity of the klystron.
4. The microwaves flow into the waveguide , which
transports them to the accelerator .
5. The electrons are absorbed in the beam stop.
VELOCITY MODULATED WAVE

OR

CURRENT MODULATED WAVE

OR
 BUNCHING PROCESS

BUNCHING PARAMETER
OUTPUT POWER & EFFICIENCY OF KLYSTRON
Reentrant Cavities
MULTI CAVITY KLYSTRON
 KLYSTRON OSCILLATOR
• OSCILLATOR= AMPLIFIER + ------------------
 KLYSTRON OSCILLATOR
• OSCILLATOR= AMPLIFIER + POSITIVE FEED BACK

• Connecting the output of catcher cavity to the input of

buncher cavity with positive feedback gives the
Klystron Oscillator
Reflex Klystron
 HELIX TWT
• A TWT consist of an electron beam and a sloe wave structure
• The electron beam is focused by a constant magnetic field along the
electron beam and slow wave structure.
• The Slow wave structure is either helical type or folded back line.
• The applied signal propagates around the turns of helix an produces
an electric field at the centre of helix.
• The electrons entering the helix at zero field are not affected by the
signal ,the electrons at accelerating field are accelerated and at
retarded field , are retarded.
• As the electrons travels along the helix further ,they bunch at the
collector end and electron energy transfer to helix .Thus
amplification is accomplished .
Characteristics of TWT
Slow Wave Structures
Travelling Wave Tube
 Slow Wave Structures

• They are non resonant periodic circuits

designed for producing large gain over wide
bandwidth.
• They are used in microwave tubes to reduce
the wave velocity.
• Commonly used structure is Helix
Helix structure

For small pitch angles

ω-β or Brillouin Diagram
Group velocity of the wave is
Amplification Process
 Amplification Process
• Simplified Diagram
• The dc velocity of electrons is slightly greater than the
axial wave velocity so that more electrons in retarding
field.
• Then the maximum energy transferred from beam to
electromagnetic field.
• The bunch become more compact and the large
amplification voltage occur at the end of helix.
• The magnet produces the axial magnetic field to
prevent spreading.
Four propagation constants

Phase constant
 Four propagation constants
• These four propagation constants represents four modes of wave
propagation in TWT.
• The wave corresponding to is a forward wave and its amplitude
grows exponentially with distance.
• The wave corresponding to is a forward wave and its amplitude
decays exponentially with distance
• The wave corresponding to is a forward wave and its amplitude
remains constant.
• The wave corresponding to is a backward wave and its amplitude
remains constant
 Gain consideration
• The total circuit voltage is the sum of three forward voltages
corresponding to three forward waves. It is given by

The output voltage is

 MAGNETRON
• The cavity magnetron is a high-powered vacuum tube that generates
microwaves using the interaction of a stream of electrons with a
magnetic field.
• All cavity magnetrons consist of a hot cathode with a high (continuous
or pulsed) negative potential by a high-voltage, direct-current power
supply.
• The magnetron is a self-oscillating device requiring no external elements
other than a power supply
• Cathode in center, anode around outside
• Strong dc magnetic field around tube causes electrons from cathode to
spiral as they move toward anode
• Current of electrons generates microwaves in cavities around outside
• Magnetron has cavities all around the outside
• Wave circulates from one cavity to the next around the outside
MAGNETRON
 Coupling Mechanisms
1.Probes
2. Loops
3. Aperture types
 • 3. Aperture types
(a) Aperture in Transverse Wall
(b) Aperture in Broad Wall

(a) Aperture in Transverse Wall (b) Aperture in Broad Wall

Waveguide Irises-Matched Loads
Waveguide Irises-Matched Loads
Posts-Matched Loads
Tuning Screws-Matched Loads
 Waveguide Attenuators

• Two Types
1.Fixed Attenuators
2.Variable attenuators
a. Resistive card/Flap Type Attenuators
b. Vane Type Attenuator
c. Rotary Vane Type Attenuator
Fixed Attenuator
a. Resistive card/Flap Type Attenuators
Vane Type Attenuator
Rotary Vane Type Attenuator
 Waveguide Phase Shifters
• Phase shift constant βg = 2π/λg
• λg proportional to square root of relative dielectric
constant.
• Phase shifts can be obtained by using Inductive /
Capacitive Irises or by inserting dielectric rods
across the diameter of circular waveguide or along
the wider dimension of a rectangular waveguide.
• Types 1. Dielectric Phase Shifter
2. Rotary Vane Phase Shifter
1. Dielectric Phase Shifter
2. Rotary Vane Phase Shifter
 FERRITE COMPONENTS
• Mixture of Ferric Oxides and Di-valent Metal
Oxides.(MeO.Fe2O3)
• Have high resistivity
• Obeys Faradays rotation law.
• Ferrite Components are 1.Gyrator
2.Isolator
3.Circulator
 Characteristics of Ferrites
• High Resistivity nearly 1014 times greater than
metals
• Useful up to 100 GHz
• Dielectric Constant is around 10-15.
• Relative permiabilities are in the order of 1000.
• Have large number of spinning electrons
resulting strong magnetic properties.
• Have non reciprocal property.
• Working on Faraday Rotation
Faraday Rotation
GYRATOR
ISOLATOR
CIRCULATOR
CIRCULATOR-APPLICATIONS
RAT RACE JUNCTION
DIRECTIONAL COUPLER
DIRECTIONAL COUPLER-TYPES
2 HOLE DIRECTIONAL COUPLER
 SINGLE HOLE DIRECTIONAL COUPLER

S-MATRIX 0F DIRECTIONAL COUPLER

• MICROWAVE MEASUREMENTS: Description of
Microwave Bench – Different Blocks and their
Features, Precautions; Microwave Power
Measurement – Bolometer Method.
Measurement of Attenuation, Frequency,
VSWR, Cavity Q. Impedance Measurements.
 Microwave Test bench Setup
Tunable Indicating
Detector Meter

Signal Isolator Precision Variable Flap Frequency Slotted line

Generator Attenuator Attenuator Meter Section

Waveguide
Terminator
 SIGNAL GENERATORS

GUNN DIODE
REFLEX KLYSTRON
CIRULATOR <> ISOLATOR
VARIABLE ATTENUATOR
FREQUENCY METER
SLOTTED LINE SECTION
TUNABLE PROBE
 A)TUNABLE PROBE B)FIXED BROADBAND TUNED PROBE
C)TUNABLE WAVEGUIDE DETECTOR D)WAVEGUIDE DETECTOR MOUNT
WAVEGUIDE TERMINATOR
MICROWAVE BENCH SETUP
MICROWAVE BENCH SETUP
 MW POWER MEASUREMENT
• LOW POWER(0.01 mW to 10 mW)-Bolometer
• MEDIUM POWER-(10mW-1W)-Calorimetric
• HIGH POWER-(>1W)- Calorimetric Watt meter
LOW POWER MEASUREMENT-BOLOMETER
MEDIUM POWER MEASUREMENT-CALORIMETRIC
TECHNIQUE
 High Power Measurement-Calorimetric
Wattmeter
• Here we use fluid as load , the temperature
difference in load gives the output power by
the formula
ATTENUATION MEASUREMENT-POWER RATIO METHOD
ATTENUATION MEASUREMENT-RF SUBSTITUTION
METHOD
 FREQUENCY MEASUREMENT

• Electronic Technique
• Slotted Line Technique
• Wave Meter Method
FREQUENCY MEASUREMENT-Electronic
Method
Slotted Line Technique

Where is broader dimension

of waveguide
d2 is Minima position
d1 next minima position

c is velocity of microwave
= 3x108 m/s
 Wave Meter Method

2 2 2
vo  m   n   p 
fo       
2  a  b  c 
 MEASUREMENT OF IMPEDANCE
• Using Magic Tee
• Using Slotted Line
• Using Reflectometer
MEASUREMENT OF IMPEDANCE USING
MAGIC TEE
MEASUREMENT OF IMPEDANCE USING
SLOTTED LINE
MEASUREMENT OF IMPEDANCE USING
REFLECTOMETER
 MEASUREMENT OF VSWR
• LOW VSWR(S<10)
• HIGH VSWR(S>10)
LOW VSWR(S<10) MEASUREMENT
HIGH VSWR(S>10) MEASUREMENT
MEASUREMENT OF Q OF CAVITY RESONATOR-
TRANSMISSION METHOD
MEASUREMENT OF DIELECTRIC CONSTANT
PHASESHIFT MEASUREMENT
THANK YOU