RECALL P-N JUNCTION

P N N P

W W + -
+ -
Vappl > 0 Vappl < 0

Forward bias, + on P, - on N Reverse bias, + on N, - on P

(Shrink W, Vbi) (Expand W, Vbi)

Allow holes to jump over barrier Remove holes and electrons away
into N region as minority carriers from depletion region

I I

V V
SO IF WE COMBINE THESE BY FUSING THEIR
TERMINALS…

P N N P

W W +
+ - -
Vappl > 0 Vappl < 0

Holes from P region (“Emitter”) of 1st PN junction

driven by FB of 1st PN junction into central N region (“Base”)

Driven by RB of 2nd PN junction from Base into P region of

2nd junction (“Collector”)

• 1st region FB, 2nd RB

• If we want to worry about holes alone, need P+ on 1st region

• For holes to be removed by collector, base region must be thin

 BIPOLAR JUNCTION TRANSISTORS:
BASICS
+ -

IE IC
- + IB

IE = I B + I C ………(KCL)

VEC = VEB + VBC ……… (KVL)

BJT CONFIGURATIONS

ECE 663
GAIN
CONFIG
 BIPOLAR JUNCTION TRANSISTORS:
BASICS

+ -

IE IC
- + IB
BIPOLAR JUNCTION TRANSISTORS:
BASICS

Bias Mode E-B Junction C-B Junction

Saturation Forward Forward

Active Forward Reverse

Inverted Reverse Forward
Cutoff Reverse Reverse
 PNP TRANSISTOR
AMPLIFIER ACTION
INPUT VOLTAGE SMALL,
IN (small)
AND OUTPUT VERY LARGE

OUT (large)
 BASE TRANSPORT FACTOR
IE IC
IEp ICp
C
E

IB

IC
 
IE
Can all injected holes
make it to the collector?
 COMMON BASE DC CURRENT GAIN -
PNP
Common Base – Active Bias mode:

IC = IE + ICB0

IC = Cmajority+ ICBO
 ECE 663
PNP BJT COMMON BASE
CHARACTERISTIC CURVES

1.input curve
2.output curve