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Cmos Complementary Metal-Oxide-Semiconductor: By: Sulaiman Rajab Shehu Peter Esene
Cmos Complementary Metal-Oxide-Semiconductor: By: Sulaiman Rajab Shehu Peter Esene
Complementary
Metal-Oxide-Semiconductor
By:
Sulaiman Rajab Shehu
Peter Esene
CONTENTS
• NMOS (n type metal oxide)
• PMOS (p type metal oxide)
• CMOS
• OPERATING CONDITIONS FOR CMOS
NMOS
• P-type substrate
• p-n junction of source and drain are
reverse-biased.
• At threshold voltage the electrons end
up filling all the holes and a thin region
under the gate called the channel gets
inverted to act as an n-type
semiconductor - creating a conducting
path from the source to the drain,
allowing current to flow.
PMOS
• N-type substrate.
• If a negative voltage (gate-source) , the induced
negative charge on the gate will drive away the
electrons and positive charges are attracted to
the underside of the Si-SiO2 interface
• If the bands under the gate are bent up
sufficiently it forms an inversion layer.
Output is low
OPERATING CONDITIONS CMOS
OPERATION CONDITIONS CMOS
A= Vin
CASE 2: When A is low or = 0
For PMOS terminal
V(source-gate ) = VDD-0 = VDD
It is given that VDD > VT therefore PMOS
conducts.
Output is High
CONCLUSION
• NMOS
• PMOS
• CMOS
• Operating Conditions of CMOS