Field Effects

Transistors (FETs)

Copyright  2004 by Oxford University Press, Inc. 1

 Que es un FET

Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 2
Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 3
Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 4
 JFET

Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 5
Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 6
Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 7
 Vpinch off

Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 8
Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 9
Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 10
Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 11
Resolución Grafica

Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 12
 Polarización Compuerta fija

Autopolarización

Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 13
Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 14
Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 15
Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 16
 Transistor MOS

Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 17
Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 18
 Figure 4.9 Cross-section of a CMOS integrated circuit. Note that the PMOS transistor is formed in a separate n-type
region, known as an n well. Another arrangement is also possible in which an n-type body is used and the n device is
formed in a p well. Not shown are the connections made to the p-type body and to the n well; the latter functions as the
body terminal for the p-channel device.

Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 19
 Figure 4.26 (a) Basic structure of the common-source amplifier. (b) Graphical construction to determine the transfer characteristic of
the amplifier in (a).

Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 20
 Figure 4.26 (Continued) (c) Transfer characteristic showing operation as an amplifier biased at point Q.

Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 21
 Figure 4.60 The current-voltage characteristics of a depletion-type n-channel MOSFET for which Vt = –4 V and k¢n(W/L)
= 2 mA/V2: (a) transistor with current and voltage polarities indicated; (b) the iD–vDS characteristics; (c) the iD–vGS
characteristic in saturation.

Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 22
 Caracteristicas de transferencias de los FETs

Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 23
Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 24
 Estabilización del punto

Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 25
 Figure 4.30 Biasing using a fixed voltage at the gate, VG, and a resistance in the source lead, RS: (a) basic arrangement;
(b) reduced variability in ID; (c) practical implementation using a single supply; (d) coupling of a signal source to the gate
using a capacitor CC1; (e) practical implementation using two supplies.

Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 26
 Figure 4.18 (a) Circuit symbol for the p-channel enhancement-type MOSFET. (b) Modified symbol with an arrowhead on the source
lead. (c) Simplified circuit symbol for the case where the source is connected to the body. (d) The MOSFET with voltages applied and
the directions of current flow indicated. Note that vGS and vDS are negative and iD flows out of the drain terminal.

Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 27
 Figure 4.17 Large-signal equivalent circuit model of the n-channel MOSFET in saturation, incorporating the output
resistance ro. The output resistance models the linear dependence of iD on vDS and is given by Eq. (4.22).

Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 28
 Table 4.1

Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 29
 Figure 4.20 Circuit for Example 4.2.

Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 30
 Figure 4.21 Circuit for Example 4.3.

Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 31
 Figure 4.31 Circuit for Example 4.9.

Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 32
 Figure 4.32 Biasing the MOSFET using a large drain-to-gate feedback resistance, RG.

Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 33
 Figure 4.37 Small-signal models for the MOSFET: (a) neglecting the dependence of iD on vDS in saturation (the channel-length
modulation effect); and (b) including the effect of channel-length modulation, modeled by output resistance ro = |VA| /ID.

Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 34
 Figure 4.38 Example 4.10: (a) amplifier circuit; (b) equivalent-circuit model.

Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 35
 Figure 4.43 (a) Common-source amplifier based on the circuit of Fig. 4.42. (b) Equivalent circuit of the amplifier for
small-signal analysis. (c) Small-signal analysis performed directly on the amplifier circuit with the MOSFET model
implicitly utilized.

Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 36
 Figure 4.44 (a) Common-source amplifier with a resistance RS in the source lead. (b) Small-signal equivalent circuit with
ro neglected.

Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 37
 En alta Frecuencia ?

Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 38
Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 39
Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright  2004 by Oxford University Press, Inc. 40