On Semiconductort NPN

ON Semiconductor
NPN
Complementary Silicon 2N3055A
High-Power Transistors MJ15015 *
. . . PowerBase complementary transistors designed for high
power audio, stepping motor and other linear applications. These
devices can also be used in power switching circuits such as relay or
MJ2955A
solenoid drivers, dc–to–dc converters, inverters, or for inductive loads PNP
requiring higher safe operating area than the 2N3055 and MJ2955. MJ15016 *
• Current–Gain — Bandwidth–Product @ IC = 1.0 Adc
fT = 0.8 MHz (Min) – NPN *ON Semiconductor Preferred Device
= 2.2 MHz (Min) – PNP

15 AMPERE
•
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Safe Operating Area — Rated to 60 V and 120 V, Respectively COMPLEMENTARY
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
SILICON
*MAXIMUM RATINGS POWER TRANSISTORS
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Rating Symbol
2N3055A
MJ2955A
MJ15015
MJ15016 Unit
60, 120 VOLTS
115, 180 WATTS
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎ
ÎÎÎ
Collector–Base Voltage
VCEO
VCBO
60
100
120
200
Vdc
Vdc
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Voltage Base
ÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Reversed Biased
VCEV 100 200 Vdc
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
Emitter–Base Voltage
ÎÎÎÎÎÎÎ
ÎÎÎ
Collector Current — Continuous
VEBO
IC
7.0
15
Vdc
Adc CASE 1–07
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
TO–204AA
Base Current IB 7.0 Adc (TO–3)
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Total Device Dissipation @ TC = 25C
Derate above 25C
PD 115
0.65
180
1.03
Watts
W/C
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Operating and Storage Junction
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Temperature Range
TJ, Tstg –65 to +200 C
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Characteristic Symbol Max Max Unit
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Thermal Resistance, Junction to Case RθJC 1.52 0.98 C/W
*Indicates JEDEC Registered Data. (2N3055A)
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
 Semiconductor Components Industries, LLC, 2001 1 Publication Order Number:

March, 2001 – Rev. 3 2N3055A/D
2N3055A MJ15015 MJ2955A MJ15016
200
PD(AV), AVERAGE POWER DISSIPATION (W)

150
MJ15015
MJ15016
100
50 2N3055A
MJ2955A
0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
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2
2N3055A MJ15015 MJ2955A MJ15016
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ Characteristic Symbol Min Max Unit
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ
OFF CHARACTERISTICS (1)
ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
*Collector–Emitter Sustaining Voltage 2N3055A, MJ2955A VCEO(sus) 60 — Vdc
(IC = 200 mAdc, IB = 0) MJ15015, MJ15016 120 —
ÎÎÎÎÎ
Collector Cutoff Current
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
(VCE = 30 Vdc, VBE(off) = 0 Vdc) 2N3055A, MJ2955A
ICEO
— 0.7
mAdc
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
(VCE = 60 Vdc, VBE(off) = 0 Vdc) MJ15015, MJ15016 — 0.1
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
*Collector Cutoff Current 2N3055A, MJ2955A ICEV — 5.0 mAdc
(VCEV = Rated Value, VBE(off) = 1.5 Vdc) MJ15015, MJ15016 — 1.0
ÎÎÎÎÎ
ÎÎÎÎÎ
Collector Cutoff Current
ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, 2N3055A, MJ2955A
ICEV
— 30
mAdc
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
TC = 150C) MJ15015, MJ15016 — 6.0
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Emitter Cutoff Current 2N3055A, MJ2955A IEBO — 5.0 mAdc
(VEB = 7.0 Vdc, IC = 0) MJ15015, MJ15016 — 0.2
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
*SECOND BREAKDOWN
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Second Breakdown Collector Current with Base Forward Biased IS/b Adc
(t = 0.5 s non–repetitive) 2N3055A, MJ2955A 1.95 —
ÎÎÎÎÎ
(VCE = 60 Vdc)
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
MJ15015, MJ15016 3.0 —
*ON CHARACTERISTICS (1)
DC Current Gain
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ hFE —
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
(IC = 4.0 Adc, VCE = 2.0 Vdc) 10 70
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
(IC = 4.0 Adc, VCE = 4.0 Vdc) 20 70
(IC = 10 Adc, VCE = 4.0 Vdc) 5.0 —
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
Collector–Emitter Saturation Voltage
ÎÎÎÎ
ÎÎÎÎ
(IC = 4.0 Adc, IB = 400 mAdc)
VCE(sat)
— 1.1
Vdc
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
(IC = 10 Adc, IB = 3.3 Adc) — 3.0
(IC = 15 Adc, IB = 7.0 Adc) — 5.0
ÎÎÎÎÎ
ÎÎÎÎ
Base–Emitter On Voltage
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
(IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on) 0.7 1.8 Vdc
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
*DYNAMIC CHARACTERISTICS
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
Current–Gain — Bandwidth Product
ÎÎÎÎ
ÎÎÎÎ
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
2N3055A, MJ15015
MJ2955A, MJ15016
fT 0.8
2.2
6.0
18
MHz
Output Capacitance
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob 60 600 pF
*SWITCHING CHARACTERISTICS (2N3055A only)
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
RESISTIVE LOAD
Delay Time
ÎÎÎÎÎÎÎÎÎ
Rise Time ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ (VCC = 30 Vdc, IC = 4.0 Adc,
td
tr
—
—
0.5
4.0
µs
µs
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
IB1 = IB2 = 0.4
0 4 Adc,
Adc
Storage Time tp = 25 µs
µ Duty y Cycle
y 2% ts — 3.0 µs
Fall Time
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%.
tf — 6.0 µs
*Indicates JEDEC Registered Data. (2N3055A)
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3
2N3055A MJ15015 MJ2955A MJ15016
200 2.8
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

TJ = 25°C
100 TJ = 150°C 2.4
70
hFE , DC CURRENT GAIN
50 2
-55°C
30 1.6 IC = 1 A 4A 8A
20
VCE = 4.0 V 25°C 1.2
10
7 0.8
5
0.4
3
2 0
0.2 0.3 0.5 0.7 1 2 3 5 7 10 15 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5
IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (AMP)
Figure 2. DC Current Gain Figure 3. Collector Saturation Region
T CURRENT-GAIN BANDWIDTH PRODUCT (MHz)

3.5 10
TC = 25°C
3
5.0 MJ2955A
2.5
V, VOLTAGE (VOLTS)
MJ15016
2
2.0
1.5 2N3055A
VBE(sat) @ IC/IB = 10 MJ15015
1
1.0
VBE(on) @ VCE = 4 V
0.5
VCE(sat) @ IC/IB = 10
0
0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 0.1 0.2 0.3 0.5 1.0 2.0
f,
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMPS)

Figure 4. “On” Voltages Figure 5. Current–Gain — Bandwidth Product
10
7 VCC = 30 V
5 IC/IB = 10
VCC TJ = 25°C
+30 V 3
2
t, TIME (s)
tr
µ
7.5 Ω
25 µs 1
+13 V SCOPE 0.7
30 Ω
0 0.5
1N6073 0.3
-11 V
0.2
tr, tf ≤ 10 ns td
-5 V
DUTY CYCLE = 1.0% 0.1
0.2 0.3 0.5 0.7 1 2 3 5 7 10 15
IC, COLLECTOR CURRENT (AMP)
Figure 6. Switching Times Test Circuit Figure 7. Turn–On Time

(Circuit shown is for NPN)
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2N3055A MJ15015 MJ2955A MJ15016
10 400
7 TJ = 25°C
5 2N3055A
3 200 Cib MJ15015
C, CAPACITANCE (pF)
2 ts MJ2955A
MJ15016
t, TIME (s)
µ
tf
0.1 100
0.7
0.5 VCC = 30 50 Cob
IC/IB = 10
0.3 IB1 = IB2
0.2 TJ = 25°C 30
0.1 20
0.2 0.3 0.5 0.7 1 2 3 5 7 10 15 1.0 2.0 5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (AMPS) VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Turn–Off Times Figure 9. Capacitances
COLLECTOR CUT–OFF REGION
NPN PNP
10,000 1000
VCE = 30 V VCE = 30 V
1000 100
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)

µ
100 10 TJ = 150°C
TJ = 150°C
10 1.0
100°C 100°C
1.0 0.1 IC = ICES
IC = ICES
REVERSE FORWARD
REVERSE FORWARD
0.1 0.01 25°C
25°C
0.01 0.001
+0.2 +0.1 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5
VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 10. 2N3055A, MJ15015 Figure 11. MJ2955A, MJ15016
20 20
30 µs 0.1ms
IC, COLLECTOR CURRENT (AMPS)
10
IC, COLLECTOR CURRENT (AMP)
10
100 µs 5.0
1 ms 1.0ms
5
2.0
100 ms 1.0 100ms

BONDING WIRE LIMIT BONDING WIRE LIMIT
2 THERMAL LIMIT @ TC = 25°C dc THERMAL LIMIT @ TC = 25°C
0.5
(SINGLE PULSE) (SINGLE PULSE)
SECOND BREAKDOWN LIMIT SECOND BREAKDOWN LIMIT dc
1 0.2
10 20 60 100 15 20 30 60 100 120
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 12. Forward Bias Safe Operating Area Figure 13. Forward Bias Safe Operating Area
2N3055A, MJ2955A MJ15015, MJ15016
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5
2N3055A MJ15015 MJ2955A MJ15016
7There are two limitations on the power handling ability The data of Figures 12 and 13 is based on TC = 25C;
of a transistor: average junction temperature and second TJ(pk) is variable depending on power level. Second
breakdown. Safe Operating area curves indicate IC – VCE breakdown pulse limits are valid for duty cycles to 10% but
limits of the transistor that must be observed for reliable must be derated for temperature according to Figure 1.
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
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6
2N3055A MJ15015 MJ2955A MJ15016
PACKAGE DIMENSIONS
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
A
N NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
–T– SEATING 2. CONTROLLING DIMENSION: INCH.
PLANE 3. ALL RULES AND NOTES ASSOCIATED WITH
E REFERENCED TO-204AA OUTLINE SHALL APPLY.
D 2 PL K
INCHES MILLIMETERS
0.13 (0.005) M T Q M Y M DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
U B --- 1.050 --- 26.67
L –Y–
V C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
2 E 0.055 0.070 1.40 1.77
G B G 0.430 BSC 10.92 BSC
H 1 H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
–Q– N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
0.13 (0.005) M T Y M U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
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2N3055A MJ15015 MJ2955A MJ15016
PowerBase is a trademark of Semiconductor Components Industries, LLC.
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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ON Semiconductor

= 2.2 MHz (Min) – PNP

Adc CASE 1–07

 Semiconductor Components Industries, LLC, 2001 1 Publication Order Number:

PD(AV), AVERAGE POWER DISSIPATION (W)

Figure 1. Power Derating

*Indicates JEDEC Registered Data. (2N3055A)

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 2. DC Current Gain Figure 3. Collector Saturation Region

T CURRENT-GAIN BANDWIDTH PRODUCT (MHz)

IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMPS)

Figure 6. Switching Times Test Circuit Figure 7. Turn–On Time

Figure 8. Turn–Off Times Figure 9. Capacitances

COLLECTOR CUT–OFF REGION

IC, COLLECTOR CURRENT (A)

Figure 10. 2N3055A, MJ15015 Figure 11. MJ2955A, MJ15016

100 ms 1.0 100ms

PowerBase is a trademark of Semiconductor Components Industries, LLC.

PUBLICATION ORDERING INFORMATION

Datasheets for electronics components.

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