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Unit I Power Semiconductor Devices
Unit I Power Semiconductor Devices
Power Semiconductor
Devices
Introduction
Classification
Important Parameters
Breakdown voltage.
On-resistance.
Trade-off between breakdown voltage and
on-resistance.
Rise and fall times for switching between on
and off states.
Safe-operating area.
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L
W n Cox (VGS VT )
Thyristor: Structure
Applications
Power semiconductor devices have widespread
applications:
Automotive
Alternator, Regulator, Ignition, stereo tape
Entertainment
Power supplies, stereo, radio and television
Appliance
Drill motors, Blenders, Mixers, Air conditioners
and Heaters
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Thyristors
Most important type of power
semiconductor device.
Have the highest power handling
capability.they have a rating of 1200V /
1500A with switching frequencies ranging
from 1KHz to 20KHz.
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SCR
Symbol of
Silicon Controlled
Rectifier
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Structure
C a th o d e
G a te
n
J3
10
19
cm
-3
n
-
10
17
cm
10
-3
J2
n
J1
p
p
10
10
10
13
17
19
-5 x 1 0
cm
cm
14
cm
-3
19
cm
-3
-3
-3
Anode
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1 0 m
3 0 -1 00 m
5 0 -1 0 0 0 m
3 0 -5 0 m
Device Operation
Simplified model of a
thyristor
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V-I
Characteristics
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I B1 I A 1 1 I CBO1 1
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2 I g I CBO1 I CBO 2
IA
1 1 2
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Case 1: When I g 0
IA
I CBO1 I CBO2
1 1 2
Case 2: When I G 0
2 I g I CBO1 I CBO 2
IA
1 1 2
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Turn-on
Characteristics
ton td tr
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A K
tC
tq
t
IA
A n o d e c u rre n t
b e g in s t o
d e cre a se
di
dt
C o m m u t a t io n
R ecovery
t1
t2
R e c o m b in a tio n
t3
t4
t5
t
tq=
d e v ic e o f f t im e
tc=
c ir c u it o f f t im e
tgr
trr
tq
tc
Turn-off
Characteristi
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Thermal Turn-on.
Light.
High Voltage.
Gate Current.
dv/dt.
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Thyristor Types
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Fast Switching
Thyristors
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Bidirectional Triode
Thyristors (TRIAC)
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Mode-I
Operation
M T (+ )
2
Ig
M T 1 ()
(+ )
MT2 Positive,
Gate Positive
Ig
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Mode-II
Operation
M T (+ )
2
P
In itia l
c o n d u c tio n
N
G
F in a l
c o n d u c tio n
N
M T 1 ()
MT2 Positive,
Gate Negative
Ig
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Mode-III Operation
M T 2 ()
N
P
N
P
1
2
M T 1 (+ )
G
(+ )
MT2 Negative,
Gate Positive
Ig
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Mode-IV Operation
M T 2 ()
M T 1 (+ )
G
(-)
MT2 Negative,
Gate Negative
Ig
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Triac Characteristics
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BJT structure
heavily doped ~ 10^15
provides the carriers
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BJT characteristics
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BJT characteristics
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Mode
EBJ
CBJ
Cutoff
Forward
active
Reverse
Forward
Reverse
Reverse
Reverse
active
Reverse
Forward
Saturation
Forward
Forward
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IE
IC
VCE +
+
VBE
IB
+
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B
VCB
-
MOSFET
NMOS: N-channel Metal
Oxide Semiconductor
L = channel length
W = channel width
GATE
L
Metal (heavily
doped poly-Si)
s ula
n
i
e
d
i
x
o
n
tor
ilicon
p-type s
DRAIN
SOURCE
A GATE electrode is placed above (electrically insulated
from) the silicon surface, and is used to control the
resistance between the SOURCE and DRAIN regions
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N-channel MOSFET
Gate
Source
IS
n
IG
gate
oxide insulator
Drain
ID
n
PMOS
n+ poly-Si
p+ poly-Si
n+
n+
p+
p-type Si
p+
n-type Si
(n+ denotes very heavily doped n-type material; p+ denotes very heavily doped p-type material)
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NMOS
n+ poly-Si
n+
n+
p-type Si
PMOS
Body
p+ poly-Si
p+
p+
n-type Si
Body
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MOSFET Terminals
The voltage applied to the GATE terminal determines whether
current can flow between the SOURCE & DRAIN terminals.
For an n-channel MOSFET, the SOURCE is biased at a lower
potential (often 0 V) than the DRAIN
(Electrons flow from SOURCE to DRAIN when VG > VT)
oxide
semiconductor
VGS +
IG
VDS
+
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S
VGS +
oxide
semiconductor
ID
VGS > VT
zero if VGS < VT
VDS
ID
VDS
+
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NMOSFET Example:
ID
VGS = 2 V
VGS = 1 V > VT
VDS
IDS = 0 if VGS < VT
VDS
VGS VT 2
n Cox
VDS
2) Saturation Region:
VDS > VGS VT
k n W
VGS VT 2
I DSAT
2 L
where k n nCox
CUTOFF
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region: VG < VT
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Device Operation
Interface between control (low power electronics) and (high power) switch.
Functions:
amplifies control signal to a level required to drive power switch
provides electrical isolation between power switch and logic level
Complexity of driver varies markedly among switches. MOSFET/IGBT drivers
are simple but GTO drivers are very complicated and expensive.
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