BI TP LN MN

IN T CN BN
H v tn: Nguyn Vn Nam
MSSV: 14142199
Lp hc sng th 3 tit 1,2,3,4
I. bi
67. Cho mch nh hnh v,tm
A,Hy tra cu cc thng s , Cbc , Cbe hay fT ca transistor Q1 , Q2
B.im tnh Q1 , Q2
c.Vit phng trinhg v v ng ti DCLL v ACLL ca Q2 .Tm maxswing
ca Vo2
d.V s tng ng tn hiu nh ca mch.
E, AV , Zi , Zo , Ai
f.Hy v dng sng ra ti cc im A,B,C,D bit sng vo c dng
sin1000t(mV)
g.Tm bin tn hiu vo cc i tn hiu ra khng b mo
h, Hy m phng cu b,f,g .Nhn xt v kt qu tnh v m phng
Bit transistor Q1 , Q2 l loi 2SC2873

II.Bi gii
a, Ta c h s s khuych i ca transistor ph thuc rt ln vo nhit
mi trng v Ic n khng phi l mt hng s
-Da vo datasheet ca transistor 2SC2873 v mch thit k ta chn =
220 tng ng vi con 2SC2785 nn ta s m phng con ny thay cho con
2SC2873
-Da vo datasheet ta c fT = 120MHz ,
b, phn tch DCLL
-xt Q1 :
Vcc0.7 200.7
C Ib1 = 820+1. = 820+221 =
0.01854mA
=> Ic1
4,078 mA

Ie1 = Ib1 = 0.01854.220 =

VCE1 = VCC -4,078.2=11,844V

=> Q1 (4,078;11,844)
=> re1 =

26 mV
4,078

= 6,37 , hie1 =

6,37.220=1.4k
-xt Q2
Vcc0.7
200.7
C Ib2 = 10 00+ 2. = 1000+ 2.221 = 0,01338 mA

=> Ic2

Ie2 = Ib2 = 0,01338.220 = 2,9445 mA

VCE2 = VCC -2,9445.2=14,11V

=> Q2 (2,9445;14,11)
=> phng trnh ng ti DCLL: Ic2 =
=> re2 =

26 mV
2,9445

Vce 20
+
2
2

mA

= 8,83 , hie2 =

8,83.220 = 1.94k
C,phn tch ACLL ca Q2
Khi ta ngn mch ng vo Vi =0v,Ib
=0mA
1000.1
C RAC = R1M //R1k => RAC = 10 00+1

1k

C vce~ =

ic~ . RAC => ic~ =

v ce
R AC

mA

Nn ta c phng trnh ng ti ACLL ca Q 2 l

icT = ic~ + ICQ =
= 2,9445 +

v ce
+
R AC

14,11
1

IC +

V CEQ
R AC

17,05 mA

Ic
mA
17,0
5
1
4
1
10=Vcc\(Rc9+Re)
2

mA

7
5

Q2

2,944
5
1

Maxswing[
v ce ]=min[1

10

12 14.11

17,05

4,11 ;
2,9445 .1] =
2,9445v
D, s mch
tn hiu nh AC

tng ng

E,
Xt tng 1:
Zi1= R820K // hie1 => Zi1=

820.1,4
820+1,4

= 1,397k

Zo1 = RC1 = 1k
AV

AI

v o
vi
1

=
Zi1

= -AV1. R C1

RC 1 .h fe . I b 1
h ie 1 . I b 1

= -(-157).

RC 1
r e1

1,397
1

1000
6,37

= 219,3

= -157

20

VCE

(V)

Xt tng 2:
Zi2 = R1M //hie2
1
1
1
+
R1 M hie 2

=> Zi2 =

1
1
+
1000 1,94

=1,93k

Zo2 = RC2 = 1k
AV

v o
vi

R
( C 2/ R L ). h fe . I b 2
hie2 . I b 2

C
2/
R L)
(
re 2

1.1
.10 3
1+ 1
8,83

-56,62
AI

AV =

Io
= II

R
R1 M + ( C 2 / R L )
. R1 M

220.1000

= 1000+ 220.0,5

= 198,2

A V . A V =157.56,6=8886,2
1

AI = A I . A I
1

= 219,3.198,2 = 43,49k

F,
Ti

A:C VI = VS

ZI
ZI + RS
1

= VS .

1397
1397+ 500

4,77
8
V
s

Ti B:

15,92
t

= 0,74 mV

Ti

C:
17,0
5

ti D
V

Nhn hnh v ta c VCE1 = 15,97-4,049=11,921V; IC1 = 4,03mA => Q1 (11,921;4,03)

V CE2 = 17,07-2,934=14,136V; IC2 = 2,934mA => Q2
(14,136;2,934)

Sng ra ti A:

Sng ra ti B:

Sng ra ti C:

Sng ra ti D:
Sng ra ti 4 im A,B,C,D

C Maxswing[ v ce ]=min[14,11 ; 2,9445 .1] = 2,9445v

Nn tn hiu ng ra khng b mo th bin tn hiu ng ra

phi nh hn 2,9v
Ta c mc mo bin ca tn hiu ng ra ph thuc rt ln vo 2
t lc 4,7uF ti chn E ca 2 transistor khi ta cho tn s tn hiu
u vo thay i