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ECE512

Analog Signal Processing

23

19

Equation Sheet

12

Constants: k = 1.38 10
JK ; q = 1.602 10
C ; 0 = 8.854 10
F/m ; V T = kT q 26mV at 300 K ;
General: h(t) is impulse response of LTI system;H(s) is the Laplace transform of h(t)
m
am s + + a0
d()
j()
2
H(j) = H(j) e
T; d() = -------------- ;H(j) dB = 20 log H(j) H
; (s) = ----------------------------------------------- ;H(j) = H(s)H( s) s=j = H(j)H( j) ;
N
d
s +b s++b
H(j)

General Lowpass:

n-1

= A 0 ( 1 + F( ) ) ;

1N

spaced
Poles lie on circle of radius p ( 1 )
apart by N with first angle being ( 2N )

2N
2
2 2N
Butterworth: F( ) = ------ ; A max = 20 log 1 + ; A min 10 log 1 + ------
;
p
p
2

Chebyshev: (for p = 1);F( ) = C N(); C N() = cos ( Ncos () ) 1; C N() = cosh ( Ncosh () ) 1 ;
2

C N+1() = 2C N() C N-1(); A max = 20 log 1 + ; A min 10 log [ 1 + cosh ( Ncosh ( s p) ) ] ;

Second-order polynomial: s 2 + ( 0 Q )s + 20 ;
for Q > 0.5 ; poles complex at radius 0 and real part is 0 ( 2Q ) ;
2
Lowpass and highpass: peaking occurs if Q > 1 2 and max = 0 1 1 2Q
Bandpass: for complex poles; peak occurs at 0 and has 3 dB bandwidth of 0 Q
LCR: 0 = 1 LC ; Q = 0 CR;
2 ( ( R 1 || R 2 ) ( ( R 1 || R 2 ) + R 3 ) ) = 1 Q
;
2 ( ( R 2 || R 3 ) ( ( R 2 || R 3 ) + R 1 ) ) = k
KHN Biquad: RC = 1 0 ;

1 1
2 C1
r - ---------------1 - ;
- --------Tow-Thomas Biquad: RC = 1 0 ; damping resistor is QR ; numerator is s ------ s ---- ---- C
C R RR
2
1
3
RR
2C
2
2
2
Noise: noise equivalent bandwidth = ( 2 )f 3dB ; V R(f) = 4kTR ; I d(f) = 2qI D ; r d = ( kT ) ( qI D ) ; V C = ( kT ) C ;
snT

Discrete-Time: X s(s) = x c(nT)e

; X(z) = x c(nT)z ; p = ( z 1 ) ( z + 1 ) ;
z = ( 1 + p ) ( 1 p ) ; = tan ( 2 ) ;
Switched-Cap: R eq = T C ; Q CH = WLC ox ( V GS V t ) ;
1
N
N
Data Converters: B in = b 1 2 + + b N 2 ; V LSB = V ref 2 ; V out = V ref B in ; V ref B out = V in + V Q ; V Q 0.5V LSB ;
V Q(rms) = V LSB 12 ; SNR = 6.02N + 1.76 ; E off(D/A) = V out V LSB
E gain(D/A) = ( V out V LSB

1...1

V out V LSB

0...0

) (2 1) ;

0...0

; E off(A/D) = V 0...01 V LSB 0.5LSB ; t < 1 ( 2 f in ) ;

N

E gain(A/D) = ( V 1...1 V LSB V 0...01 V LSB ) ( 2 2 ) ;

Oversampling: OSR = f s ( 2f 0 ) ; SNR 0 = 6.02N + 1.76 + 10 log ( OSR ) ; SNR 1 = 6.02N + 1.76 5.17 + 30 log ( OSR ) ;
SNR 2 = 6.02N + 1.76 12.9 + 50 log ( OSR ) ; S TF(z) = H(z) ( 1 + H(z) ) ; N TF(z) = 1 ( 1 + H(z) )
M-1
M
1 1 z
1
i
(( M ) 2)- ; N (e j) 1.5 for 1-bit quantizer stability ;
- ; T avg(e j) = sinc
T avg(z) = ----- z = ----- ------------------------------------------------TF
M 1 z 1
M
sinc( 2)
i=0

Bipolar transistors:

I C = I CS e

V BE V T

; gm = IC VT ; re = gm = VT I E ;
2

CMOS transistors: K n = 0.5 n C ox ( W L ) ; I D = 2K n ( ( V GS V tn )V DS ( V DS 2 ) ) ; r ds = ( 2K n ( V GS V tn ) )

2
I D = K n ( V GS V tn ) ; g m = 2K n ( V GS V tn ) = ( 2I D ) ( V GS V tn ) ; r s = 1 g m ;
Ideal Transcondcutor: i o = G m v i ; Bipolar Diff Pair: I C2 = I 1 ( 1 + e
CMOS Pair: K eq = ( K n K p ) ( K n + K p )

vi VT

) ;

; V t-eq = V tn V tp ;

Dynamic Range: (all in dB or dBm) ID 3 = I D3 I D1 ; OIP 3 = I D1 ID 3 2 ; SFDR = ( 2 3 ) ( OIP 3 N o ) ;

2

THD = 10 log ( ( V h2 + V h3 + ) V f ) ;

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