1.

Tranzistoare MOS
Circuitele logice MOS sunt construite folosind tranzistoare MOS att ca elemente active
WUDQ]LVWRDUHFkWLFDHOHPHQWHSDVLYHSHSRVWGHUH]LVWRDUH
7UDQ]LVWRDUHOH026SRWILFXFDQDOLQGXVWLS(
WLS'

'HSOHWLRQ

(QKDQFHPHQW

FXvPERJ

LUHVDXFDQDO LQL LDO

FXV U FLUHLODULQGXOORUSRWILGHWLSQVDXS

Cu canal tip n
Cu canal indus
Cu canal tip p
Tranzistor MOS
Cu canal tip n
&XFDQDOLQL LDO

Cu canal tip p
1.1.Tranzistor MOS cu canal indus de tip n:

)LJ7UDQ]LVWRU026FXFDQDOLQGXVGHWLSQ6HF LXQHSULQWUDQ]LVWRUVLPEROL]DUH
LYHGHUHVSD LDO

&RQVWUXF LH

Cei patru electrozi specifici unui tranzistor MOS sunt :

*

 JULO  JDWH 6

 VXUV  VRXUFH '

 GUHQ  GUDLQ %

 VXEVWUDW EXON 'H UHJXO  VXUVD HVWH

VFXUWFLUFXLWDW FXVXEVWUDWXOYH]LL VLPEROXO IRORVLW SHQWUXWUDQ]LVWRU L DD YRP FRQVLGHUD L QRL
vQFHOHFHXUPHD] 

Q VHPLFRQGXFWRUXO GH WLS S VXQW FUHVFXWH SULQ GLIX]LH GRX  UHJLXQL VHSDUDWH GH WLS Q GHQXPLWH
VXUVD L GUHQD *ULOD GLQ PDWHULDO FRQGXFWRU PHWDO $OXPLQLX VDX 6LOLFLX SROLFULVWDOLQ
SRO\VLOLFRQHVWHL]RODW ID

GHVHPLFRQGXWRUFXXQVWUDWIRDUWHVXE LUHGHGLR[LGGH6LOLFLX6L22

  XQ L]RODWRU GH IRDUWH EXQ  FDOLWDWH *ULOD DFRSHU  VXEVWUDWXO SH WRDW  VXSUDID D GLQWUH VXUV  L
GUHQ SX LQFKLDULSHVWHVXUV LGUHQ 
'LPHQVLXQLOH /

 OXQJLPH L :

 O

LPH FDUDFWHUL]HD]  WHKQRORJLD L LPSOLFLW GHQVLWDWHD GH

LQWHJUDUH $FWXDOPHQWH VD DMXQV OD R WHKQRORJLH GH RUGLQXO 

 

XWLOL]DWH vQWUR VWUXFWXU  LQWHJUDW  GH UHJXO  OXQJLPHD HVWH IL[  /

YDULDELO LPXOWPDLPDUHvQIXQF LHGHSURSULHW

Anul
Dimensiune


1980
5.0

1983
3.5

1985
2.5

1987
1.75

1989
1.25

P 3HQWUX WUDQ]LVWRDUHOH

 

 LDU O

LPHD : HVWH

LOHSHFDUHWUHEXLHV OHDLE WUDQ]LVWRUXO

1991
1.0

1993
0.8

1995
0.6

1998
0.4

2000
0.2

P

(unde 1 = 1 angstrom = 0,1 nm).

*URVLPHDWLSLF SHQWUXVWUDWXOGHGLR[LGHVWH

)XQF LRQDUH
,QWHUHVHD]  FDUDFWHULVWLFD ,D

=f (UDS) pentru diverse valori ale parametrului UGS. Deosebim

XUP WRDUHDFRPSRUWDUHILJLILJ

Fig. 2. Inducerea canalului ntr-un tranzistor MOS

a.
pentru 0 UGS < UP nu este indus canalul vQWUHGUHQ LVXUV 'DF VH DSOLF  WHQVLXQH
UDS > 0, curentul este foarte mic (IDSSaQ$GHWHUPLQDWGHFXUHQWXO LQYHUVDO MRQF LXQLLSQGLQWUH
GUHQ LVXEVWUDWSRODUL]DW LQYHUV3UDFWLFFDUDFWHULVWLFD,D=f(UDSVHFRQIXQG FXDEVFLVD
b.
pentru UGSUp JULOD SR]LWLY  DWUDJH HOHFWURQLL L OD VXSUDID D VHPLFRQGXFWRUXOXL VH
IRUPHD] XQVWUDWGHLQYHUVLHFDUHVFKLPE WLSXOVHPLFRQGXFWRUXOXLGLQWLSSvQWLSQLFDUH
SRDWHDVLJXUDFRQGXF LHvQWUHGUHQ LVXUV VHVSXQHF 

se induce canal. Tensiunea UGS la care

VHLQGXFHFDQDOVHQXPHWH

tensiune de prag (threshold) sau de W

LHUHLVHQRWHD] FX8P

( UTH

vQ XQHOH UHIHULQ H 9DORDUHD DFHVWHL WHQVLXQL GHSLQGH GH WHKQRORJLH GRSDUH JURVLPH VWUDW R[LG
HWFLX]XDOSHQWUXFLUFXLWHOHLQWHJUDWHORJLFHHVWHGH9SkQ OD9'DF VHFRQVLGHU R
DOW  WHQVLXQH

U GS 2 astfel ca U GS 2 > U GS1 U p  JURVLPHD FDQDOXOXL

FUHWH L GHFL FUHWH L

).

FRQGXFWLELOLWDWHDVDRGLPHQVLXQHWLSLF SHQWUXJURVLPHDFDQDOXOXLHVWHGHFFD

)LJ&XUHQWXOGHGUHQ ,DIXQF LHGHWHQVLXQHD8DS

6 FRQVLGHU PDFXPF vQFRQGL LLOHvQFDUHHVWHLQGXVFDQDOVHDSOLF RWHQVLXQH8DSSR]LWLY 

'H GDWD DFHDVWD GHRDUHFH H[LVW  FDQDO LQGXV H[LVW  FLUFXOD LH GH FXUHQW vQWUH GUHQ  L VXUV 
FXUHQWDF UXLH[SUHVLHHVWHGDW GH

U DS
I D = (U GS U p )U DS

W OX
cu = n
L TOX
unde: nPRELOLWDWHDHOHFWURQLORURYDORDUHWLSLF
:O

(1)

HVWHFP

/Vs );

LPHDFDQDOXOXL

OXSHUPLWLYLWDWHDGLHOHFWULF DGLR[LGXOXLGHVLOLFLX
TOX grosimea stratului de oxid.
7UDQ]LVWRUXO VH FRPSRUW  FD R UH]LVWHQ

. Deoarece
VXUV  8GS,

 D F UHL YDORDUH HVWH FRPDQGDW  GH 8GS

tensiunea ntre JULO  L GUHQ  QRWDW  8GD HVWH PDL PLF  GHFkW WHQVLXQHD JULO
(UGD=UGS-UDSL8DS!JURVLPHDFDQDOXOXLHVWHPDL PLF  vQ]RQDGUHQHLGHFkWvQ]RQD VXUVHL
YH]LILJFQJXVWDUHDFDQDOXOXLLPSOLF FUHWHUHDUH]LVWHQ HL VDOHFDUDFWHULVWLFD,D=f(UDS) nu
HVWHGUHDSW FDvQFD]XOXQHLUH]LVWHQ HIL[HFLVHURWXQMHWH7RWXLDWkWWLPSFkW8GD>Up, stratul
GH LQYHUVLH H[LVW  L vQ YHFLQ WDWHD GUHQHL $FHDVW  ]RQ  VH QXPHWH UHJLXQHD OLQLDU  D

caracteristicii YH]L ILJ  XQGH WUDQ]LVWRUXO HVWH FDUDFWHUL]DW GH HFXD LD   &UHVFkQG 8DS ,
tensiunea UGD VFDGH L DWXQFL FkQG 8GD=Up, canalul n apropierea drenei se nchide - fig.2.d.
1RW PWHQVLXQHD8DSSHQWUXDFHDVW VLWXD LHFDQDOXOODOLPLWD vQFKLGHULL vQDSURSLHUHDGUHQHLFX
WHQVLXQHGHVDWXUD LH

UDSsat. Deoarece UGD=UGS-UDSLLPSXQ

QG8GD

= UGS-UDS = UpUH]XOW

YDORDUHDWHQVLXQLLGHVDWXUD LH

UDSsat=UGS-Up

(2)

$FHDVW  WHQVLXQH GH VDWXUD LH SHQWUX GLYHUVH YDORUL DOH WHQVLXQLL GH JULO  D IRVW ILJXUDW  SXQFWDW

pe caracteristica ID=f(UDS) n fig.3.

Pentru tensiuni UDS>UDssat FDQDOXO HVWH vQFKLV vQDLQWH GH D DMXQJH OD GUHQ

  ILJH &RQGXF LD

DUH ORF SULQWUXQ PHFDQLVP GH VWU SXQJHUH VLPLODU FX FHO FDUH DUH ORF OD WUDQ]LVWRUXO ELSRODU
RELQXLW vQ UHJLXQHD ED]HL &XUHQWXO GH GUHQ  U PkQH FRQVWDQW FX FUHWHUHD WHQVLXQLL 8DS L
UHOD LDGHFDOFXOSHQWUXHOHVWH

ID =

(U

U p )

GS

(3)

&XUHQWXO ILLQG FRQVWDQW WUDQ]LVWRUXO OXFUHD]  FD R VXUV  GH FXUHQW FRQVWDQW D F UXL YDORDUH HVWH
FRPDQGDW  SULQ 8GS $FHDVW  ]RQ  GH IXQF LRQDUH VH QXPHWH UHJLXQH GH VDWXUD LH L HVWH
FDUDFWHUL]DW GHHFXD LD

:
1. Pentru UGS < Up tranzistorul MOS este blocat iar pentru UGS > Up acesta conduce (curentul

2EVHUYD LH

ILLQGFDUDFWHUL]DWILHGHHFXD LDILHGH

2. 5HOD LLOH L  VXQW DSR[LPDWLYH UHSUH]HQWkQG PRGHOH VLPSOLILFDWH SHQWUXWUDQ]LVWRUXO

026 2GDW  FX PLFRUDUHD GLPHQVLXQLORU DFHVWH UHOD LL VXIHU  VHULRDVH PRGLILF UL
LQIOXHQ D HIHFWHORU GH FDS W SHQWUX FDQDOXO LQGXV Q FD]XO FLUFXLWHORU ORJLFH vQV
HVHQ LDO U PvQHREVHUYD LDGHODSXQFWXO

7UDQ]LVWRU026FXFDQDOLQL LDOGHWLSQ

n cazul tranzistoarelor MOS cu canal

LQL LDO vQWUH GUHQ  L VXUV  HVWH GLIX]DW FDQDOXO vQF  GLQ

ID]DGHFRQVWUXF LHvQVLPEROL]DUHILJGUHQDLVXUVDVXQWXQLWHSULQOLQLHFRQWLQX 

)LJ7UDQ]LVWRU026FXFDQDOLQL LDOGHWLSQVHF LXQHSULQWUDQ]LVWRULUHSUH]HQWDUH

)XQF LRQDUHDHVWHIRDUWHDVHP Q WRDUHFXFHDDWUQ]LVWXUXOXLFXFDQDOLQGXVYH]LILJ'HGDWD

DFHDVWD FKLDU L SHQWUX 8GS

  WUDQ]LVWRUXO FRQGXFH H[LVW  FDQDO FRQVWUXLW L QX LQGXV 3HQWUX

UGS!JURVLPHDFDQDOXOXL FUHWH L vQ FRQVHFLQ

 L FRQGXF LD WUDQ]LVWRUXOXL FUHWH 3HQWUX 8GS

  FRQGXF LD VFDGH L OD R DQXPLW  YDORDUH QHJDWLY  D WHQVLXQLL GH JULO  FDQDOXO FKLDU GLVSDUH
VDUFLQDQHJDWLY DJULOHLUHVSLQJHHOHFWRQLLGLQFDQDOXOGHWLSQ$FHDVW WHQVLXQHHVWHWHQVLXQHD

de prag UPLHVWHQHJDWLY

vQFD]XOWUDQ]LVWRUXOXLFXFDQDOLQL LDO

Fig.5. Caracteristica de curent ID = f ( UDSSHQWUXXQWUDQ]LVWRU026FXFDQDOLQL

LDO

&RPSRUWDUHDWUDQ]LVWRUXOXLHVWHGHVFULV GHDFHOHDLHFXD LLLFXREVHUYD LDF DFXP

tensiunea UPHVWHQHJDWLY

1.3. Tranzistor MOS cu canal de tip p

,QL LDO DX IRVW FRQVWUXWH FLUFXLWH ORJLFH S026 $FXP VH IRORVHVF WUDQ]LVWRDUH 026 FX FDQDO S

numai n cadrul circuitelor CMOS - n acest caz sunt folosite numai tranzistoarele cu canal
indus.
&RQVWUXF LDL IXQF LRQDUHDXQXLWUDQ]LVWRU026FXFDQDO LQGXVGH WLS S HVWH VWULFW DVHP Q WRDUH

cu cea a unui tranzistor MOS cu canal n. Deosebirea

HVHQ LDO  FRQVW  vQ IDSWXO F  GH GDWD DFHDVWD JULOD
WUHEXLH V  ILH OD SRWHQ LDO QHJDWLY ID

 GH VXEVWUDW

pentru a induce un canal de tip p. De asemenea,

WHQVLXQHD GH SUDJ QRWDW  WRW 8p  HVWH QHJDWLY  L VH

induce canal pentru tensiuni UGS < Up  L WHQVLXQHD

UDSFDUHWUHEXLHDSOLFDW GLQH[WHULRUHVWHWRW QHJDWLY
FHHD FH GHWHUPLQ  XQ FXUHQW GH GUHQ  GH VHQV LQYHUV

comparativ cu cel de la tranzistorul tip n - vezi fig.6. n

fapt, un tranzistor MOS cu canal p poate fi gndit
identicFXXQXOFXFDQDOQGDF WHQVLXQLOHLFXUHQ LLVH
iau n modulL VH LQHFRQWF DFHVWHDVXQWGHIDSWGH
semn opus !
Fig.6. Tanzistor MOS cu canal indus tip p
(FXD LLOHFDUHGHVFULXIXQF LRQDUHDWUDQ]LVWRUXOXL026FXFDQDOSVXQWLGHQWLFHFXFHOHDOH

tranzistorului cu canal n :
SHQWUXUHJLXQHDOLQLDU

U2
I D = (U GS U p )U DS DS
2

(4)

cu = p

W OX
iar ID UH]XOW
L TOX

 SR]LWLY L 8DS

, UGS  L 8p (cu valori negative) au sensul din

ILJ &HOHODOWH P ULPL DX DFHOHDL VHPQLILFD LL FD SHQWUX WUDQ]LVWRDUHOH FX FDQDO Q 0RELOLWDWHD

p , are R YDORDUH WLSLF

dect mobilitatea electronilor.
JROXULORU QRWDW 

ID =

(U

 GH    FP 9V  ILLQG  GH   RUL PDL PLF

SHQWUXUHJLXQHDGHVDWXUD LH

U p )

GS

(5)

2EVHUYD LH
3HQWUXWUDQ]LVWRDUHOH026VHIRORVHVFGHPXOWHRULUHSUH]HQW ULVLPSOLILFDWHILJ

)LJ5HSUH]HQW ULVLPSOLILFDWHDOHWUDQ]LVWRDUHORU026

,Q FRQFOX]LH FRPSRUWDUHD WUDQ]LVWRUXOXL 026 HVWH GHVFULV  GH HFXD LLOH FDUH GDX GHSHQGHQ
FXUHQWXOXL GH GUHQ  GH WHQVLXQHD GUHQ VXUV  ,D

= f (UGS , UDS , UP). In fig.8 s-au reprezentat

WHQVLXQLOHGHHOHFWURGLFXUHQWXOSHQWUXWUDQ]LVWRDUHOHS026L Q026'HUH LQXWHVWHIDSWXOF 

DD FXP DX IRVW UHSUH]HQWDWH WHQVLXQLOH 8GS

, UDS L 8P pentru tranzistorul pMOS sunt de

YDORDUHQHJDWLY 

)LJ7HQVLXQLOHGHHOHFWURGLFXUHQWXOGHGUHQ SHQWUXWUDQ]LVWRDUH026

Caracteristica curent-tensiune pentru un tranzistor nMOS

ID = 0
(6)

U GS < U P

pentru

U2
I D (lin) = (U GS U p )U DS DS
2

I D ( sat ) =

(U

U p )

si U DS < U GS U P

(7)

GS

unde = n

pentru U GS > U P

pentru U GS > U P

si U DS > U GS U P

(8)

W OX
L TOX

Caracteristica curent-tensiune pentru un tranzistor pMOS

ID = 0

U GS > U P

pentru

U2
I D (lin) = (U GS U p )U DS DS
2

I D ( sat ) =

(U

unde = P

U p )

(9)

pentru U GS < U P

si U DS > U GS U P

(10)

GS

pentru U GS < U P

si U DS < U GS U P

W OX
L TOX

(11)

8WLOL]DUHDWUDQ]LVWRUXOXLQ026FDUH]LVWHQ

GHVDUFLQ

,Q FD]XO FLUFXLWHORU ORJLFH Q026 vQ PXOWH FD]XUL UH]LVWHQ D GH VDUFLQ  GLQ FDGUXO LQYHUVRDUHORU
HVWH vQORFXLW  WRW FX XQ WUDQ]LVWRU 026
VXSUDID D DFHVWXLD ILLQG PXOW PDL PLF  L GH
DVHPHQHDWHKQRORJLDGHUHDOL]DUHILLQGVLPSO


VH

UHDOL]HD] 

VLPXOWDQ

FX

FHOHODOWH

tranzistoare MOS nefiind necesare etape

VXSOLPHQWDUH

3HQWUX

FRPSDUD LD

FX

XQ

UH]LVWRUvQILJVHSUH]LQW FDUDFWHULVWLFD,

f(U) a acestuia.

Fig.9. Caracteristica I = f(U) pentru un rezistor

2.1.8WLOL]DUHDFDVDUFLQ

DWUDQ]LVWRUXOXLQ026IXQF LRQkQGvQUHJLXQHDGHVDWXUD LH

canal indus avnd JULOD OHJDW  OD GUHQ 

Caracteristica de curent se deduce din caracteristica ID = f(UDS) pentru tranzistor.
3HQWUXDFHDV DFRQH[LXQHVHREVHUY F 8GD L8DS = UGS . De la bun nceput se poate spune
F  QX H[LVW  FDQDO vQ DSURSLHUHD GUHQHL GHRDUHFH 8GD = 0 < UP ) indiferent de tensiunea UDS
QDFHDVW VLWXD LHVH IRORVHWHXQWUDQ]LVWRUQ026FX

DSOLFDW WUDQ]LVWRUXOXL

)LJ7UDQ]LVWRUQ026IXQF LRQkQGFDVDUFLQ vQUHJLXQHDVDWXUDW 

6HGHRVHEHVFXUP WRDUHOHGRX VLWXD LL

pentru UDS < UP

1XH[LVW FDQDOQLFLvQDSURSLHUDVXUVHLvQFRQVHFLQ

ID = 0

pentru

FXUHQWXOHVWHQXODGLF

U DS < U P

(12)

pentru UGS = UDS > UP

,Q DSURSLHUHD VXUVHL H[LVW  FDQDO GDU vQ DSURSLHUHD GUHQHL QX H[LVW  WUDQ]LVWRUXO VH DIO  vQ
UHJLXQHDGHVDWXUD LHLGHFLFDUDFWHULVWLFDGHFXUHQWVHFDOFXOHD] FX

ID =

(U

U p )

DS

pentru U DS > U P

(13)

&XUHQWXO GH GUHQ  GDW GH HFXD LD  DUH DOXUD XQHL SDUDEROH WDQJHQW  OD DEVFLV  vQ SXQFWXO GH
FRRUGRQDW 8P

2.2.8WLOL]DUHDFDVDUFLQ

DWUDQ]LVWRUXOXLQ026IXQF LRQkQGvQUHJLXQHDOLQLDU

LvQDFHDVW VLWXD LHVHIRORVHWHWRWXQWUDQ]LVWRUQ026FX

canal indus. Grila tranzistorului este

OHJDW  OD R VXUV  VXSOLPHQWDU  QRWDW  8GG vQ WLPS FH GUHQD HVWH OHJDW  OD VXUVD SULQFLSDO  GH

alimentare UDD ILJ&HOHGRX

VXUVHGHDOLPHQWDUHVHDOHJDVWIHO vQFkWGLIHUHQ DGLQWUHHOHV

ILH PDL PDUH GHFkW WHQVLXQHD GH SUDJ D WUDQ]LVWRUXOXL 026 QRWDW   8P  Q FRQVHFLQ

 vQ

DSURSLHUHDGUHQHLH[LVW WRWGHDXQDFDQDOLQGLIHUHQWGHWHQVLXQHD8DSDSOLFDW WUDQ]LVWRUXOXL

)LJ7UDQ]LVWRUQ026IXQF LRQkQGFDVDUFLQ vQUHJLXQHDOLQLDU 

,PHGLDWFH VH DSOLF  WHQVLXQH 8DS !  DSDUH FDQDO L vQ DSURSLHUHD VXUVHL L WUDQ]LVWRUXO FRQGXFH
vQUHJLXQHDOLQLDU FXUHQWXODYkQGH[SUHVLDGDW GHUHOD LD

U2
I D = (U GS U p )U DS DS
2

QORFXLQGvQDFHDVW UHOD LHHJDOLWDWHDHYLGHQW 8GS

= UDS(VHRE

LQH

2
U DS

ID =
+ ( E U p )U DS
2

(14)

8OWLPDH[SUHVLHUHSUH]LQW RSDUDERO FHWUHFSULQRULJLQHILJE

2.3.8WLOL]DUHDFDVDUFLQ
'UHSW UH]LVWHQ

DWUDQ]LVWRUXOXLQ026FXFDQDOLQL LDO

 GH VDUFLQ  SRDWH IL IRORVLW XQ WUDQ]LVWRU Q026 FX FDQDO LQL LDO

avnd grila

VFXUWFLUFXLWDW  OD VXUV  ILJ Q DFHVW FD] LPHGLDW FH VH DSOLF  WHQVLXQH GH GUHQ  SR]LWLY
WUDQ]LVWRUXO FRQGXFH GHRVHELQGXVH GRX  VLWXD LL vQ FDUH WUDQ]LVWRUXO 026 HVWH vQ UHJLXQHD
OLQLDU LUHVSHFWLYvQUHJLXQHDGHVDWXUD LH

)LJ7UDQ]LVWRUQ026FXFDQDOLQL LDOIXQF LRQkQGFDVDUFLQ

(FXD LLOHFHFDUDFWHUL]HD] IXQF LRQDUHDWUDQ]LVWRUXOXLFRLQFLGFXUHOD LLOHLSDUWLFXODUL]DWH

SHQWUXFRQGL LDHYLGHQW 8GS

U DS
I D = ( U p )U DS

( U )

=0:
pentru U DS < U P = U P

(15)

ID =

pentru U DS > U P = U P

(16)

&DUDFWHULVWLFDGHFXUHQWHVWHUHSUH]HQWDW vQILJE
2EVHUYD LH7UDQ]LVWRUXO026ILLQGGHWLSGHSOHWLRQFDQDOLQL LDOYRPDYHD8P

< 0.

3. Circuite logice nMOS

QWHKQRORJLHQ026FLUFXLWHS026VXQWH[WUHPGHSX LQIRORVLWHDFXPVXQWUHDOL]DWHGHUHJXO
FLUFXLWH 9/6, $FHVWHD VXQW LPSOHPHQWDWH FX SRU L ORJLFH L S VWUHD]  SURSULHW
IDPLOLHLSURSULHW

LFDUHSRWILSXVH vQHYLGHQ

LOH VSHFLILFH

DQDOL]kQG IXQF LRQDUHDXQXL LQYHUVRUFRQVLGHUDW

circuit fundamental).
3.1. Inversoare nMOS
Schema de principiu a unui inversor cuprinde un
HOHPHQWDFWLYDPSOLILFDWRULXQFLUFXLWVDUFLQ 

n cazul circuitelor nMOS drept element activ

VH IRORVHWHXQ tranzistor MOS cu canal indus
iar drept VDUFLQ fie o UH]LVWHQ fie un alt
tranzistor MOS n una din cele trei variante
prezentate anterior.

10

$,QYHUVRUQ026IXQF LRQkQGFXVDUFLQDvQUHJLXQHDGHVDWXUD LH

)LJ,QYHUVRU((FXVDUFLQDvQUHJLXQHDGHVDWXUD LH

&RQVWUXF LH

Inversorul este construit din tranzistorul T1 LQYHUVRU L 72 SH SRVW GH VDUFLQ

 $PEHOH WUDQ]LVWRDUH

VXQW FX FDQDO LQGXV LQYHUVRUXO VH YD QXPL GH WLS (( L VXQW UHDOL]DWH VLPXOWDQ SH VWUXFWXUD GH

siliciu motiv pentru care au DFHHDL WHQVLXQH GH SUDJ QRWDW  8p. &HOH GRX  WUDQ]LVWRDUH VXQW
nseriate; intrarea n inversor se face pe grila lui T1LDULHLUHDVHIDFHvQSXQFWXOGH vQVHULHUHGLQWUH
FHOHGRXDWUDQ]LVWRDUH6HREVHUY FD72OXFUHD]  QXPDL vQUHJLXQHDGHVDWXUD LHDYkQGJULOD OHJDW
OD GUHQ  YRP QXPL LQYHUVRUXO GH WLS ((1 9RP LGHQWLILFD WHQVLXQLOH GH HOHFWURG DOH FHORU GRX
WUDQ]LVWRDUHFXWHQVLXQLOHGHILQLWHSHQWUXLQYHUVRULDQXPH8GS1

= UIN, UDS1 = UO, UGS2 = UDS2

= UDD UO.
&HOHGRX WUDQ]LVWRDUHVXQWSDUFXUVHGHDFHODLFXUHQWDGLF ,D1

= ID2 = IDD .

)XF LRQDUH
9RPFRQVLGHUDSODQXOGH DEVFLV  8O L RUGRQDW  ,D SH FDUH YRP SODVD FDUDFWHULVLFLOH FHORU GRX

caracteristicile coincid cu caracteristicile ID = f(UDS)

din fig.3., n timp ce pentru T2 caracteristica ID = f(UDSGLQILJEHVWHWUDQVODW FX8DDLGH
VHQVRSXVDODEVFLVHLYH]LVHPQXOPLQXVvQUHOD LDGLQWUH8DS2L8O ).
WUDQ]LVWRDUHILJ6HREVHUY F SHQWUX71

)LJ&RPSXQHUHJUDILF DFDUDFWHULVWLFLORUWUDQ]LVWRDUHORU71L72

11

3XQFWHOHGHIXQF LRQDUHDOHFLUFXLWXOXL VHYRUDIOD OD LQWHUVHF LDFHORUGRX FDUDFWHULVWLFLDGLF  vQ

punctele notate A, B, C,
Vom trasa caracteristica de transfer UO = f(UIN L FXUHQWXO GH DOLPHQWDUH ,DD = f(UIN) utiliznd
FRPSXQHUHD JUDILF  L WLLQG F  FHOH GRX  WUDQ]LVWRDUH vQVHULDWH VXQW SDUFXUVH GH DFHODL FXUHQW

care coincide cu curentul absorbit de la sursa de alimentare.

Fig.
&DUDFWHULVWLFDGHWUDQVIHULFXUHQWXOGHDOLPHQWDUHSHQWUXXQLQYHUVRU((1

9RPGHRVHELXUP WRDUHOHSXQFWHGHIXQF LRQDUH

Punctul A : 6H FRQVLGHU  R WHQVLXQH GH LQWUDUH PDL PLF  GHFkW WUHQVLXQHD GH SUDJ D
tranzistoarelor MOS, UIN < UP . Caracteristica pentru T1VHFRQIXQG SUDFWLFFXDEVFLVDILJ
LDU SXQFWXO $ VH FDUDFWHUL]HD]  SULQ WHQVLXQHD GH LHLUH 8OH = UDD UP L FXUHQWXO  ,DDH = 0. n
fig.16 punctul A coincide practic cu ntregul palier caracterizat de intervalul UIN < UP .
2EVHUYD LHTensiunea UOH RE LQXW  OD LHLUHD DFHVWHL SRU L WUHEXLH V  ILH PDL PDUH FD 8P de la
SRDUWDXUP WRDUHSHQWUXDDVLJXUDRFRPDQG FRUHFW 5H]XOW F 8OH = UDD UP > UP , de unde
UDD > 2Up  3UDFWLF VH UHFRPDQG  FD vQ FD]XO LQYHUVRUXOXL ((1 WHQVLXQHD GH DOLPHQWDUH  V  ILH
DOHDV DVWIHOFD8DD (3. 4)Up.
QFRQFOX]LHGLQSXQFWXOGHIXQF LRQDUH$VHGHWHUPLQ XUP WRULLSDUDPHWULL

UOH = UDD UP
IDDH = 0
UIL = 0 UP

Punctul B VH FDUDFWHUL]HD]

 SULQ 8IN

> Up ; tranzistorul T1 VH GHVFKLGH 6HRE LQH SXQFWXO

T1 este saturat SRU LXQHD RUL]RQWDO  D

GH IXQF LRQDUH % FDUH GHVFULH R VLWXD LH vQ FDUH

caracteristicii de curent) iar T2WRWVDWXUDWDUHJULODOHJDW

GRX WUDQ]LVWRDUHUHVSHFW UHOD LD

I D1 = 1

(U GS 1 U P1 )2

(U

U P

= 1
2
2
2
(U GS 2 U P 2 )
(U DD U O U P )2
I D2 = 2
= 2
2
2
Facnd ID1 = ID2VHFDOFXOHD] 8O :
IN

12

ODGUHQ QFRQVHFLQ

FXUHQ LLSULQFHOH

UO =

1
1
U IN + U DD
1

2
2

(17)

(FXD LDUHSUH]LQW RGUHDSW GHSDQW 

1
2

vQFDUDFWHULVWLFDGHWUDQVIHUYH]LSRU LXQHD $

B-C in fig. 16.

Punctul D: Crescind n continuare UINSXQFWXOGHIXQF LRQDUHVHGHSODVHD] GLQ&VSUH'
n care tranzistorul T1 HVWH vQ UHJLXQHD OLQLDU  LDU WUDQ]LVWRUXO 72 HVWH vQ UHJLXQHD GH VDWXUD LH 6H
SRWVFULHFXUHQ LL,D1L,D2FXUHOD LLOHLUHVSHFWLYLDSRLGLQHJDOLWDWHD

ID1 = ID2 SURFHGkQGFDPDLVXVVHGHWHUPLQ DQDOLWLF8O = f(UIN6HRE LQHRHFXD LHGHRUGLQ

att n UO FkW L vQ 8IN  FDUDFWHULVWLFD GH WUDQVIHU ILLQG R SDUDERO  SRU LXQHD &'( vQ ILJ  
(YLGHQWSXQFWXO&HVWHXQSXQFWGHIURQWLHU WUHFHUHDOXL71GLQUHJLXQHDVDWXUDW vQFHDOLQLDU 

Punctul E  3UHVXSXQkQG SRDUWD FDPDQGDW  GH XQD VLPLODU  WHQVLXQHD GH LQWUDUH PD[LP
este UOH calculat mai sus. Pentru UIN = UDD Up VH RE LQH SXQFWXO (  FDUH DUH DEVFLVD 8OL L
ordonata IDDL.
6HREVHUY F 

- UOL nu este 0 ci corespunde punctului E depinznd de parametrii L8P ai tranzistoarelor.

3HQWUXQLYHO/ODLHLUHVHDEVRDUEHFXUHQWXO,DDL care nu este nul .
3HQWUXRFRPDQG FRUHFW SHQWUXSRDUWDXUP WRDUHHVWHQHFHVDUFD8OL < UP .
&DUDFWHULVWLFD GH WUDQVIHU  GLQ ILJ VH DSURSLH PDL ELQH GH R FDUDFWHULVWLFD LGHDO  FX FkW SDQWD

este mai mare.

 vQ ORFXO WUDQ]LVWRUXOXL 72 VH IRORVHWH XQ DOW WUDQ]LVWRU 72 , avind 2 < 2 , inversorul va

SRU LXQLLOLQLDUH$%&HVWHPDLPDUHDOWIHOVSXVFXFkWUDSRUWXO
'DF

1 2

DYHD FDUDFWHULVWLFD GH WUDQVIHU PDL DEUXSW  vQ UHJLXQHD $%&' ILJXUDW FX OLQLH vQWUHUXSW  vQ
ILJ L ILJ 3HQWUX R FDUDFWHULVWLF  GH WUDQVIHU FkW PDL DSURSLDW  GH LGHDO VH UHFRPDQG  FD
UDSRUWXO

1 

2 V

 ILH PDUH FHO SX LQ 

1  2

   $FHDVWD vQVHDPQ

 FD GDF  XQXO GLQ

WUDQ]LVWRDUHHVWHFRQVWUXLWODGLPHQVLXQHPLQLP SRVLELOFHOGHDOGRLOHDWUHEXLHV ILHGHGHRUL

PDLPDUHFHHDFHGXFHODULVLS vQGHQVLWDWHGHLQWHJUDUH

n concluzie inversorul E/E1SUH]LQW

Avantaje:
-

XUP WRDUHOH

VLPSOLWDWHvQFRQVWUXF LH
RVLQJXU VXUV GHDOLPHQWDUH
vQVLWXD LD+ODLHLUHFXUHQWXODEVRUELWGHODVXUV HVWH,DDH

= 0;

Dezavantaje
- QLYHO+ODLHLUHGHYDORDUH8OH = UDD UP ;
- GHQVLWDWH GH LQWHJUDUH DIHFWDW  GH IDSWXO F  SHQWUX R EXQ  FDUDFWHULVWLF
DGRSW XQUDSRUW 1 2 15.20;
- vQVLWXD LD/ODLHLUHFXUHQWXODEVRUELWGHODVXUV HVWH,DDL 0 ;

13

 GH WUDQVIHU VH

%,QYHUVRUQ026IXQF LRQkQGFXVDUFLQDvQUHJLXQHDOLQLDU

Analiza acestui inversor se face exact la fel cu precedentul.

)LJ,QYHUVRU((FXVDUFLQDvQUHJLXQHDOLQLDU GHWLS((2

&RQVWUXF LH

Ambele tranzistoare, T1 LQYHUVRU L 72 VDUFLQ  VXQW FX FDQDO LQGXV LQYHUVRUXO VH YD QXPL GH WLS
E/E2  L VXQW UHDOL]DWH VLPXOWDQ SH VWUXFWXUD GH VLOLFLX  DX DFHHDL WHQVLXQH GH SUDJ QRWDW  8p.
&HOH GRX WUDQ]LVWRDUH VXQW vQVHULDWH,QWUDUHD vQ LQYHUVRU VH IDFH SH JULOD OXL 71 LDU LHLUHD VH IDFH
vQ SXQFWXO GH vQVHULHUH GLQWUH FHOH GRX WUDQ]LVWRDUH 6HREVHUY  FD 72 OXFUHD]  QXPDL vQ UHJLXQHD
OLQLDU  DYkQG JULOD OHJDW  OD R VXUV  GH DOLPHQWDUH VXSOLPHQWDU  QRWDW  8GG

. Vom identifica

WHQVLXQLOHGHHOHFWURGDOHFHORUGRX WUDQ]LVWRDUHFXWHQVLXQLOHGHILQLWHSHQWUXLQYHUVRULDQXPH

UGS1 = UIN, UDS1 = UO, UGS2 = UGG UOL8DS2 = UDD UO .

LvQDFHVWFD]FHOHGRX WUDQ]LVWRDUHVXQWSDUFXUVHGHDFHODLFXUHQWFDUHFRLQFLGHFXFHODEVRUELW
GHODVXUV DGLF ,D1

= ID2 = IDD .

)XF LRQDUH
9RPFRQVLGHUDSODQXOGH DEVFLV  8O L RUGRQDW  ,D SH FDUH YRP SODVD FDUDFWHULVLFLOH FHORU GRX

caracteristicile coincid cu caracteristicile ID = f(UDS)

din fig.3., n timp ce pentru T2 caracteristica ID = f(UDSGLQILJEHVWHWUDQVODW FX8DDLGH
VHQVRSXVDODEVFLVHLYH]LVHPQXOPLQXVvQUHOD LDGLQWUH8DS2L8O ).
WUDQ]LVWRDUHILJ6HREVHUY F SHQWUX71

)LJ&RPSXQHUHJUDILF DFDUDFWHULVWLFLORUSHQWUXWUDQ]LVWRDUHOH71L72

14

3XQFWHOHGHIXQF LRQDUHDOHFLUFXLWXOXL VHYRUDIOD OD LQWHUVHF LDFHORUGRX FDUDFWHULVWLFLDGLF  vQ

punctele notate A, B, C,
Vom trasa caracteristica de transfer UO = f(UIN L FXUHQWXO GH DOLPHQWDUH ,DD = f(UIN) utiliznd
FRPSXQHUHDJUDILF LWLLQGF FHOHGRX WUDQ]LVWRDUHvQVHULDWHVXQWSDUFXUVHGHDFHODLFXUHQW

)LJ&DUDFWHULVWLFDGHWUDQVIHULFXUHQWXOGHDOLPHQWDUHSHQWUXXQLQYHUVRU((2

9RPGHRVHELXUP WRDUHOHSXQFWHGHIXQF LRQDUH

Punctul A : fie tensiunea de intrare UIN < UP . Caracteristica pentru T1VHFRQIXQG SUDFWLF
= UDD L
curentul IDDH = 0. n fig.20 punctul A coincide practic cu ntregul palier caracterizat de intervalul
UIN < UP pentru ambele grafice.
QFRQFOX]LHGLQSXQFWXOGHIXQF LRQDUH$VHGHWHUPLQ XUP WRULLSDUDPHWULLDLLQYHUVRUXOXL((2 :
- UOH = UDD
- IDDH = 0
- UIL = 0 UP
FX DEVFLVD  ILJ   LDU SXQFWXO $ VH FDUDFWHUL]HD]  SULQ WHQVLXQHD GH LHLUH 8OH

Punctul B VH FDUDFWHUL]HD]

 SULQ 8IN

> Up ; tranzistorul T1 VH GHVFKLGH 6HRE LQH SXQFWXO

T1 este saturat SRU LXQHD RUL]RQWDO  D

GH IXQF LRQDUH % FDUH GHVFULH R VLWXD LH LQ FDUH

caracteristicii de curent) iar T2vQUHJLXQHDOLQLDU

DUHJULODOHJDW ODVXUVDVXSOLPHQWDU &XUHQ LL

SULQFHOHGRX WUDQ]LVWRDUHVXQWFDOFXO LFXLUHVSHFWLY

I D1 = 1

(U GS 1 U P1 )2
2

= 1

I D 2 = 2 (U GS 2 U p )U DS 2

(U

IN

U P

U
(U DD U O ) 2

= 2 (U GG U O U p ) (U DD U O )

2
2

2
DS 2

Facnd ID1 = ID2 se poate determina UO =f (UIN)6HRE LQHRHFXD LHGHRUGLQDWkWvQ8OFkWLvQ

UINFDUDFWHULVWLFDGHWUDQVIHUDYkQGDOXUDGHSDUDERO ILJSRU LXQHD$%&
Punctul D: Crescnd n continuare UIN  SXQFWXO GH IXQF LRQDUH VH GHSODVHD]  GLQ & VSUH
D n care ambele tranzistoare, T1L72VXQWvQUHJLXQHDOLQLDU 6HSRWVFULHFXUHQ LL,D1L,D2 cu
UHOD LLOHLDSRLGLQHJDOLWDWHD,D1 = ID2  VH GHWHUPLQ  DQDOLWLF 8O = f(UIN 'LQ QRX VHRE LQH R

15

HFXD LHGHRUGLQ vQ8OL vQ8INFDUDFWHULVWLFD GH WUDQVIHU DYkQG  DOXUD GH SDUDERO  FX YkUIXO vQ
MRVILJSRU LXQHD&'(

Punctul E  3UHVXSXQkQG SRDUWD FDPDQGDW  GH XQD VLPLODU  WHQVLXQHD GH LQWUDUH PD[LP
este tocmai UOHFDOFXODWPDLVXVDGLF 8OH = UDD) FkQG8IN = UOH = UDDVHRE LQHSXQFWXO(
care are abscisa UOLLRUGRQDWD,DDL.
6HREVHUY F 

- UOL nu este 0 ci corespunde punctului E, depinznd de parametrii L8P ai tranzistoarelor.

care nu este nul .
3HQWUXRFRPDQG FRUHFW SHQWUXSRDUWDXUP WRDUHHVWHQHFHVDUFD8OL < UP .
3HQWUXQLYHO/ODLHLUHVHDEVRDUEHFXUHQWXO,DDL

&DUDFWHULVWLFD GH WUDQVIHU  GLQ ILJ VH DSURSLH PDL ELQH GH R FDUDFWHULVWLFD LGHDO  FX FkW SDQWD

este mai mare.

 vQ ORFXOWUDQ]LVWRUXOXL72VH IRORVHWHXQDOWWUDQ]LVWRUQRWDW72 , avind 2 < 2 , graficele

SRU LXQLLOLQLDUH$%&'HVWHPDLPDUHDOWIHOVSXVFXFkWUDSRUWXO
'DF

1 2

YRU DU WD FRQIRUP OLQLHL vQWUHUXSWH DWkW vQ ILJ  FkW L vQ ILJ L vQ FD]XO DFHVWXL LQYHUVRU
SHQWUXDUH]XOWDRFDUDFWHULVWLF GHWUDQVIHUPDLDSURSLDW GHLGHDOVHUHFRPDQG FDUDSRUWXO


1  2 V

 ILH PDUH GH H[HPSOX

1  2

  L vQ DFHVW FD] DFHDVW

 FHULQ

 GXFH OD ULVLS  vQ

densitate de integrare.
n concluzie inversorul E/E2SUH]LQW XUP WRDUHOH
Avantaje:
- VLPSOLWDWHvQFRQVWUXF LH
- QLYHO+ODLHLUHGHYDORDUHPD[LPSRVLELO DGLF 8OH = UDD;
- vQVLWXD LD+ODLHLUHFXUHQWXODEVRUELWGHODVXUV HVWH,DDH = 0;
Dezavantaje
- XWLOL]DUHDDGRX VXUVHGHDOLPHQWDUH
- GHQVLWDWHGHLQWHJUDUHDIHFWDW GHIDSWXOF VHDGRSW XQUDSRUW 1
- vQVLWXD LD/ODLHLUHFXUHQWXODEVRUELWGHODVXUV HVWH,DDL 0 ;

&,QYHUVRUQ026DYkQGVDUFLQDXQWUDQ]LVWR026FXFDQDOLQL LDO

Vom denumi acest inversor cu numele inversor tip E/D.

Fig.21. Inversor de tip E/D

16

mare;

&RQVWUXF LH

Tranzistorul inversor T1 HVWH GHWLS FX FDQDO LQGXV LDU WUDQ]LVWRUXO  VDUFLQ
LQL LDOQFRQVHFLQ

 72

este de tip cu canal

WHQVLXQLOHGHSUDJDOHWUDQ]LVWRDUHORUVXQWGLIHULWH&HOHGRX WUDQ]LVWRDUHVXQW

nseriate. Tranzistorul T2DUHJULODVFXUWFLUFXLWDW ODVXUVDVD,QWUDUHDvQLQYHUVRUVHIDFHSHJULODOXL

T1LDULHLUHDVHIDFHvQSXQFWXOGHvQVHULHUHGLQWUHFHOHGRX WUDQ]LVWRDUH9RPLGHQWLILFDWHQVLXQLOH
GHHOHFWURGDOHFHORUGRX WUDQ]LVWRDUHFXWHQVLXQLOHGHILQLWHSHQWUXLQYHUVRULDQXPH

UGS1 = UIN, UDS1 = UO, UGS2

L8DS2

= UDD UO .

&HOHGRX WUDQ]LVWRDUHVXQWSDUFXUVHGHDFHODLFXUHQW,D1

= ID2 = IDD .

)XF LRQDUH
9RPFRQVLGHUDSODQXOGHDEVFLV 8OLRUGRQDW ,DDSHFDUHYRPSODVDFDUDFWHULVLFLOHFHORUGRX

tranzistoare, fig.22. n timp ce pentru T1 caracteristicile coincid cu ID = f(UDS) din fig.3 pentru
T2 caracteristica ID = f(UDS GLQ ILJE HVWHWUDQVODW  FX 8DD L GH VHQV RSXV DO DEVFLVHL YH]L
VHPQXOPLQXVvQUHOD LDGLQWUH8DS2L8O ).

)LJ&RPSXQHUHJUDILF DFDUDFWHULVWLFLORUSHQWUXWUDQ]LVWRDUHOH71L72

3XQFWHOHGHIXQF LRQDUHDOHFLUFXLWXOXL VHYRUDIOD OD LQWHUVHF LDFHORUGRX FDUDFWHULVWLFLDGLF  vQ

SXQFWHOHQRWDWH$%&'L(

)LJ&DUDFWHULVWLFDGHWUDQVIHULFXUHQWXOGHDOLPHQWDUHSHQWUXXQLQYHUVRU('

17

9RP XWLOL]D FRPSXQHUHD JUDILF  SHQWUX DWUDVD FDUDFWHULVWLFD GH WUDQVIHU 8O

= f(UIN L FXUHQWXO

de alimentare IDD = f(UIN).

'HRVHELPXUP WRDUHOHSXQFWHGHIXQF LRQDUH

Punctul A : fie tensiunea de intrare UIN < UP1 . Caracteristica pentru T1VHFRQIXQG SUDFWLF
FX DEVFLVD  ILJ   LDU SXQFWXO $ VH FDUDFWHUL]HD]  SULQ WHQVLXQHD GH LHLUH 8OH = UDD L
curentul IDDH = 0. n fig.23 punctul A coincide practic cu ntregul palier caracterizat de intervalul
UIN < UP1 pentru ambele grafice.
QFRQFOX]LHGLQSXQFWXOGHIXQF LRQDUH$VHGHWHUPLQ XUP WRULLSDUDPHWULLDLLQYHUVRUXOXL('

UOH = UDD
IDDH = 0
UIL = 0 UP1

Punctul B VH FDUDFWHUL]HD]

 SULQ 8IN

> Up1 . Tranzistorul T1 VH GHVFKLGH L OXFUHD]

 vQ

UHJLXQHD VDWXUDW SRU LXQHD RUL]RQWDO  D FDUDFWHULVWLFLL VDOH GH FXUHQW LDU 72 OXFUHD]  vQ UHJLXQHD
OLQLDU SRU LXQHDURWXQMLW DFDUDFWHULVWLFLLVDOH &XUHQ LL SULQ FHOH GRX WUDQ]LVWRDUH VXQW FDOFXO L
FXLUHVSHFWLY

I D1 = 1

I D2

(U GS 1 U P1 )2
2

= 1

(U

IN

U P1

U DS
(U DD U O ) 2
2
= 2 (U GS 2 U p 2 )U DS 2
= 2 ( U p 2 ) (U DD U O )

2
2

Egalnd ID1 = ID2VHGHWHUPLQ

8O

=f (UIN)6HRE LQHRHFXD LHGHRUGLQDWkWvQ8OFkWLvQ8IN

FDUDFWHULVWLFD GH WUDQVIHU DYkQG  DOXUD GH SDUDERO  FX YkUIXO vQ VXV  ILJ  SRU LXQHD $%&

Punctul C este punctul terminal al acestei regiuni, n care T2 WUHFH GLQ UHJLXQHD OLQLDU  vQ FHD GH
= - UP2  DGLF
pentru UO = UDD + UP2 .

VDWXUD LH &RQIRUP JUDILFXOXL GLQ ILJ E DFHDVW  VLWXD LH VH SHWUHFH SHQWUX 8DS2

Punctele de la C la D: Crescnd n continuare UINSXQFWXOGH IXQF LRQDUHVHGHSODVHD]

din C spre D n care ambele tranzistoare, T1 L 72  VXQW vQ UHJLXQHD VDWXUDW  3UDFWLF vQ DFHDVW
SRU LXQH FHOH GRX  FDUDFWHULVWLFL VH VXSUDSXQ DPEHOH VXQW RUL]RQWDOH  L SXQFWXO GH IXQF LRQDUH
PLJUHD]  GLQ & vQ ' I U  D PRGLILFD WHQVLXQHD GH LQWUDUH $FHDVW  VLWXD LH VH WUDGXFH vQ
FDUDFWHULVWLFD GH WUDQVIHU SULQ SRU LXQHD YHUWLFDO  GLQWUH & L ' vQ FDUH 8O VH PRGRILF  I U

modificarea lui UIN . Se poate calcula tensiunea de intrare pentru aceste puncte scriind ambii
FXUHQ L,D1L,D2FXUHOD LLOHVSHFLILF UHJLXQLLGHVDWXUD LHLI FkQGDSRL,D1 = ID2.
2
U IN U P1
(U GS 1 U P1 )2
I D1 = 1
= 1
2
2
2
(U U P 2 )
( U P 2 )2
I D 2 = 2 GS 2
= 2
2
2
Notnd cu UPRAGWHQVLXQHDGHLQWUDUHSHQWUXFDUHDUHORFHJDOLWDWHDFXUHQ LORUVHFDOFXOHD]

18

U PRAG = U P1 + U P 2

2
1

(18)

Tensiunea de intrare UPRAG  SHQWUX FDUH FDUDFWHULVWLFD GH WUDQVIHU HVWH YHUWLFDO  VH SRDWH DOHJH
DSURDSH GH YDORDUHD LGHDO  8 PRAG = UOH  DOHJkQG FRQYHQDELO FHOH GRX  WHQVLXQL GH SUDJ DOH
tranzistoarelor UP1 L 8P2 I U  D LPSXQH XQ UDSRUW 1 2 mare, deci cu o densitate de integrare
PDLEXQ 

Punctul E  3UHVXSXQkQG SRDUWD FDPDQGDW  GH XQD VLPLODU  WHQVLXQHD GH LQWUDUH PD[LP
este UOH = UDD) FkQG8IN = UOH = UDDVHRE LQHSXQFWXO(GHDEVFLV 8OLLRUGRQDW ,DDL.
6HREVHUY F SHQWUXDFHVWSXQFW

- UOL nu este 0 ci corespunde punctului E, depinznd de parametrii tranzistoarelor.

care nu este nul .
3HQWUXRFRPDQG FRUHFW SHQWUXSRDUWDXUP WRDUHHVWHQHFHVDUFD8OL < UP .
3HQWUXQLYHO/ODLHLUHVHDEVRDUEHFXUHQWXO,DDL

Caracteristica de transfer din fig.23. se apropie cel mai bine (comparativ cu inversoarele E/E1 L
E/E2GHRFDUDFWHULVWLFDLGHDO DYkQGSRU LXQHD&'YHUWLFDO 
QFRQFOX]LHLQYHUVRUXO('SUH]LQW XUP WRDUHOH

Avantaje:
- &DUDFWHULVWLF GHWUDQVIHUDSURDSHLGHDO FXSRU LXQHD&'YHUWLFDO 
- QLYHO+ODLHLUHGHYDORDUHPD[LPSRVLELO DGLF 8OH = UDD;
- vQVLWXD LD+ODLHLUHFXUHQWXODEVRUELWGHODVXUV HVWH,DDH = 0;
- XQUDSRUW 1 2 mai convenbil ceea ce permite o densitate de integrare mai mare ;
Dezavantaje
- RWHKQRORJLH QHW PDL FRPSOLFDW  FDUH SUHVXSXQH UHDOL]DUHD SH DFHHDL SDVWLO  GH VLOLFLX
GHWUDQ]LVWRDUH026GHWLS(LGHWLS'

vQVLWXD LD/ODLHLUHFXUHQWXODEVRUELWGHODVXUV HVWH,DDL

0;

2EVHUYD LH
QXOWLPXOWLPSVH IRORVHVFLFLUFXLWH Q026DYkQGGUHSW VDUFLQ  R UH]LVWHQ

 UHDOL]DW  GH UHJXO

GLQSROLVLOLFLXFRQYHQDELOGRSDWVLPXOWDQFXUHDOL]DUHDJULOHLSHQWUXWUDQ]LVWRDUH$FHDVW VROX LH
SHUPLWH R GHQVLWDWH GH LQWHJUDUH DFFHSWDELO  UH]LVWHQ D LPSOHPHQWDW  vQ FKLSXO GH VLOLFLX RFXS
WRWXLXQVSD LXIRDUWHPDUH

Problema 13HQWUXLQYHUVRDUHOHDQDOL]DWHV VHFDOFXOH]HFXUHQWXO,DDL.

,QGLFD LH : se presupune UIN = UOHLGLQ,D1 = ID2 VHFDOFXOHD] PDLvQWkL8OLLDELDDSRL,DDL .
Problema 2. 6

VHDQDOL]H]HIXQF LRQDUHDXQXLLQYHUVRUQ026DYkQGGUHSWVDUFLQ RUH]LVWHQ

Problema 3.3HQWUXLQYHUVRDUHOHDQDOL]DWHV

VHFDOFXOH]HSHFDUDFWHULVWLFDGHWUDQVIHU8O

= f(UIN)

FRRUGRQDWHOHSXQFWHORUGHFkWLJXQLWDU

: din ID1 = ID2 VHFDOFXOHD] H[SUHVLD vQ8OL 8INDSRLVH GLIHUHQ LD]  DFHDVW  H[SUHVLH
n raport cu UOL8INL VHVHSDU UDSRUWXOG8O / d UINFDUHVHvQORFXLHWHFXYDORDUHDQXPHULF

,QGLFD LH

SDUWLFXODU SRDUWDILLQGLQYHUVRDUHFkWLJXQLWDUvQVHDPQ SDQW 

19

3.2. Circuite logice SI-NU , SAU-NU statice

3RUQLQGXVHGHODLQYHUVRUXOQ026SUH]HQWDWVHSRDWHJHQHUDRvQWUHDJ IDPLOLHGHFLUFXLWHORJLFH
,QILJVHSUH]LQW PRGXOGHUHDOL]DUHSHQWUXSRDUWD,18UHVSHFWLYSRDUWD6$818

)LJ3RU LQ026

&RQVWUXF LH
Q DPEHOH FD]XUL VDUFLQD D IRVW UHSUH]HQWDW  QXPDL SULQFLSLDO DFHDVWD SXWkQG V  ILH UHDOL]DW  vQ

oricare din modurile analizate n paragraful anterior : de tip E1, E2'VDXFKLDUUH]LVWHQ 

Poarta SI-NU are tranzistoarele inversoare de tip cu canal indus legate n serie, cte un tranzistor
SHQWUX ILHFDUH LQWUDUH D SRU LL 7UDQ]LVWRDUHOH VDX QRWDW WRW FX 71 FXP VD QRWDW L vQ FD]XO
LQYHUVRDUHORULvQSOXVOLWHUDFDUHVHPQLILF LQWUDUHDFRUHVSXQ] WRDUH

Poarta SAU-NU are tranzistoarele inversoare de tip cu canal indus legate n paralel Fiind folosit
FkWHXQWUDQ]LVWRUSHQWUXILHFDUHLQWUDUHDSRU LL

)XQF LRQDUH

Poarta SI-NU'DF

WRDWHWUDQ]LVWRDUHOH LQYHUVRDUH DX QLYHO + OD LQWUDUH DWXQFL HOH VXQW GHVFKLVH

LILLQGOHJDWHvQVHULHODLHLUHVHRE LQHQLYHO/(VWHVXILFLHQWFDXQDGLQSRU LV DLE / OD LQWUDUH

L WUDQ]LVWRUXO UHVSHFWLY HVWH EORFDW LDU OD LHLUH VH RE LQH QLYHO + )XQF LRQDUHD DVWIHO GHVFULV
FRUHVSXQGHIXQF LHLORJLFH6,18

Poarta SAU-NU 'DF

ODFHOSX LQR LQWUDUHVHDSOLF  QLYHO+ WUDQ]LVWRUXO UHVSHFWLY HVWH GHVFKLV

LODLHLUHVHRE LQHQLYHO/'DF WRDWHLQWU ULOHDXQLYHO/DWXQFLWRDWHWUDQ]LVWRDUHOHVXQWEORFDWH

LODLHLUHVHRE LQHQLYHO+)XQF LRQDUHDFRUHVSXQGHIXQF LHLORJLFH6$818

, UIH, UOL, UOH FXUHQ L GH LQWUDUH L LHLUH FXUHQW L

trensiune de alimentare, densitate de integrare, timp de propagare decurg imediat din
3ULQFLSDOHOHSURSULHW

SURSULHW

LDOH SRU LL  QLYHOH 8IL

LOHSRU LLIXQGDPHQWDOH

'HH[HPSOXvQFD]XOFLUFXLWXOXL,18VHREVHUY F WHQVLXQHDGHLHLUHHVWHVXPDWHQVLXQLORUSH

, atunci cnd tranzistoarele

FHOHWUHLWUDQ]LVWRDUHGHFRPDQG 3HQWUXFDWHQVLXQHD8OLV ILHVXE8P

mare).

FRQGXFDFHVWHDVXQWGLPHQVLRQDWHFRUHVSXQ] WRU

20

Q JHQHUDO SRU LOH Q026 VXQW IRORVLWH FD HOHPHQWH FRQVWUXFWLYH SHQWUX RE LQHUHD GH FLUFXLWH
EDVFXODQWH ELVWDELOH L DSRL vPSUHXQ  FX DFHVWHD VXQW IRORVLWH SHQWUX UHDOL]DUHD GH FLUFXLWH  06,
/6, L 9/6,  GHFL QX VXQW IRORVLWH SRU L VLPSOH ELVWDELOH  HWF DD FXP VH vQWkOQHVF vQ FD]XO

circuitelor TTL, ECL sau CMOS ).

3.3. Poarta de tranzmisie nMOS

3RDUWDGHWUDQVPLVLHQ026SUHVFXUWDW37FRQVW GHIDSWvQWUXQWUDQ]LVWRUQ026FXFDQDO LQGXV
FXFRQVWUXF LHVLPHWULF VXUVDLGUHQDVXQWLQWHUVFKLPEDELOHFDUHDUH IXQF LRQDUHDGH SULQFLSLX D
XQXL FRPXWDWRU . FRQHFWDW vQWUH LQWUDUHD L LHLUHD XQRU SRU L Q026 RELQXLWH  vQ ILJ 

inversoare de tip E/D).

Fig.25. Poarta de transmisie nMOS

,PSHGDQ DGHLQWUDUHvQSRDUWDFRPDQGDW VDILJXUDWVXEIRUPDXQHLFDSDFLW

LGHLQWUDUH&IN

)XQF LRQDUH
3RDUWDGHWUDQVPLVLHHVWHFRPDQGDW vQJULO GHXQVHPQDOGHWDFWFORFNQRWDW&/LFRPXW vQ
IXQF LHGHVHPQDOXODFHVWXLD
$VWIHO SHQWUX &/

 + VH SUHVXSXQH FRPDQG  WRW GH OD XQ FLUFXLW ORJLF GHFL QLYHO 8DD

WUDQ]LVWRUXO 37 HVWH GHVFKLV DUH vQ JULO  WHQVLXQH PDL PDUH GHFkW WHQVLXQHD GH SUDJ 8P QHFHVDU

pentru deschiderea unui tranzistor nMOS). Nivelul logic fie UOH , fie UOL  GH OD LHLUHD SRU LL
GHFRPDQG  se transmiteF WUHLQWUDUHDSRU LLFRPDQGDWH$FHDVWDvQVHDPQ F GH IDSWFDSDFLWDWHD
CIN ILHVHvQFDUF la nivel UOH ILH VH GHVFDUF la nivel UOL&RQVWUXF LD VLPHWULF  D WUDQ]LVWRUXOXL
37 DVLJXU  FRQGXF LD ELGLUHF LRQDO  SHQWUX DFHVWD Q FRQFOX]LH SHQWUX &/
OHJ WXUDvQWUHLHLUHDSRU LLGHFRPDQG LLQWUDUHDSRU LLFRPDQGDWH

)LJ&RPDQGDLIXQF LRQDUHDXQHLSRU LGHWUDQVPLVLH

21

 + VH DVLJXU

3HQWUX &/

 / GH IDSW  LQkQG FRQW GH QLYHOHOH ORJLFH IRORVLWH WUDQ]LVWRUXO 37 HVWH EORFDW

WHQVLXQH vQ JULO  PDL PLF  GHFkW WHQVLXQH GH SUDJ 8P D WUDQ]LVWRUXOXL Q026 /HJ WXUD vQWUH
SRDUWDGHFRPDQG LFHDFRPDQGDW HVWHvQWUHUXSW &KLDUGDF QLYHOXOORJLFGHODLHLUHDSRU LLGH
FRPDQG  VH PRGLILF  DFHVWD QX VH WUDQVPLWH PDL GHSDUWH 3H GH DOW  SDUWH FDSDFLWDWHD &IN
PHPRUHD]  QLYHOXO ORJLF OD FDUH D IRVW vQF UFDW  DWXQFL FkQG 37 HUD GHVFKLV  $FHDVW  PHPRUDUH
SRDWH GXUD GHVWXO GH PXOW GHRDUHFH UH]LVWHQ D SULQ FDUH DU IL SRVLELO  GHVF UFDUHD HVWH IRDUWH PDUH

ILH UH]LVWHQ D WUDQ]LVWRUXOXL 37 EORFDW  GH RUGLQXO   RKPL ILH UH]LVWHQ D GH L]ROD LH D JULOHL

12

pentru tranzistorul comandat - de ordinul a 10  RKPL  $FHDVW  SRVLELOLWDWH GH PHPRUDUH SHQWUX
XQWLPSOLPLWDWHVWHIRORVLW vQGH]YROWDUHDcircuitelor MOS dinamice.
2EVHUYD LH

7UDQ]LVWRUXO37FRQGXFHDWkWWLPSFkWHVWHLQGXVFDQDODGLF DWkWWLPSFkWJULODHVWH
ODRWHQVLXQH FX FHO SX LQ 8 P PDL PDUH GHFkW VXUVD VDX GUHQD 5H]XOW  F  WHQVLXQHD
PD[LP  FH SRDWH IL WUDQVPLV  SULQ 37 HVWH 8DD

- UP. Cu alte cuvinte,

FKLDU GDF

QLYHOXO GH LHLUH DO SRU LL GH FRPDQG  HVWH 8DD QLYHOXO DMXQV OD LQWUDUHD SRU LL
FRPDQGDWH L PHPRUDW GH &IN

) este UDD UP  $FHVW OXFUX QX GHUDQMHD]

 SUHD

PXOW GHRDUHFH SRDUWD FRPDQGDW  UHIDFH QLYHOXO ORJLF FRUHFW YH]L FDUDFWHULVWLFD GH
WUDQVIHUSHQWUXRRSRDUW Q026

'DF  VH PHQ LQH FRPDQGD &/

tensiune memorat de pe CIN V

 / XQ WLPS SUHD PDUH HVWH SRVLELO FD QLYHOXO GH

ILH PRGLILFDWFRQVWDQWDGHWLPS5&IN

este mare dar

WRWXLILQLW 'LQDFHVW FDX] VHUHFRPDQG FD IUHFYHQ DVHPQDOXOXLGHWDFW&/V

DLE RYDORDUHUH]RQDELO VHQXPHWHIUHFYHQ

GHUHIUHVKLDUHRYDORDUHvQ MXU

de 500 kHz.
Utilizare
1.
2.

3RDUWDGHWUDQVPLVLHQ026VHSRDWHIRORVLSHQWUXEORFDUHDXQHLF LGHVHPQDO
6LPLODUXQXLLQYHUVRUXUPDWGHRSRDUW GHWUDQVPLVLHILJVDXFRQVWUXLWFLUFXLWH6,18
L 6$818 XUPDWH GH SRU L GH WUDQVPLVLH FLUFXLWH FDUH SRDUW  QXPHOH GH SRU L ORJLFH

dinamice  8WLOL]kQG DFHVWH SRU L VD FRQVWUXLWR vQWUHDJ

 IDPLOLH GH FLUFXLWH GLQDPLFH  vQ

VSHFLDO PHPRULL L UHJLVWUH 6SHFLILF WXWXURU DFHVWRU FLUFXLWH HVWH IRORVLUHD HIHFWXOXL GH

memorare a unui nivel logic pe capacitatea CINSUHFXPL IRORVLUHDXQXL VHPQDO GH UHIUHVK
pentru refacerea nivelului logic.

22