22

CAPITOLUL 2

5HJLPXO GH FRPXWD LH DO GLVSR]LWLYHORU VHPLFRQGXFWRDUH

Q HOHJHUHD IXQF LRQ ULL FLUFXLWHORU ORJLFH SUHVXSXQH FXQRDWHUHD XQRU DVSHFWH OHJDWH GH UHJLPXO GH FRPXWD LH DO GLVSR]LWLYHORU VHPLFRQGXFWRDUH XWLOL]DWH vQ DFHVWH

structuri: dioda, WUDQ]LVWRUXO ELSRODU L WUDQ]LVWRUXO XQLSRODU 'HL cursului de (OHFWRQLF , 'LVSR]LWLYH (OHFWURQLFH FRQVLGHU P
VXFFLQW D DFHVWRU QR LXQL

SUHGDWH vQ FDGUXO XWLO R UHYHGHUH

2 5HJLPXO GH FRPXWD LH DO GLRGHL VHPLFRQGXFWRDUH

Caracteristica static D GLRGHL VHPLFRQGXFWRDUH ILJ GLDJUDPD D vQ FDUH s-a notat cu VP - tensiunea de prag cu Vstr- WHQVLXQHD GH VWU SXQJHUH FX ,0 - curentul
JURDV L FDUH SHUPLW R GHVFULHUH VLPSOLILFDW ]RQH GH L D IXQF LRQ ULL GLRGHL $VWIHO VH GLVWLQJ GRX VLWXDW vQ LQWHUYDOXO 9str

UH]LGXDO VDX GH VDWXUD LH SRDWH IL DSUR[LPDW

SULQ VHJPHQWHOH E GLQ DFHHDL ILJXU 

desenate cu linie mai

IXQF LRQDUH L DQXPH ]RQD GH EORFDUH

FRQGXF LH

GLIHUHQ LDO

SULQ ,A=0, respectiv zona de 1 SHntru VA9P, n care IA = VA . S-a notat cu Rd UH]LVWHQ D Rd 1 D GLRGHL  = tg  GHWHUPLQDW GH FRDUGD FH DSUR[LPHD] vQ FDGUDQXO Rd

<VA<Vp

FDUDFWHUL]DW

 FDUDFWHULVWLFD GLRGHL vQ MXUXO SXQFWXOXL GH IXQF LRQDUH 09A0

1RW  Q IXQF LH GH YDORDUHD FRRUGRQDWHL ,A0

,IA0).
WJ  PDL PLF

, punctul M se poate situa mai jos

VDX PDL VXV SH FDUDFWHULVWLFD VWDWLF

D GLRGHL GHWHUPLQkQG R SDQW

sau mai mare, deci o tensiune de prag (VP PDL PLF VDX PDL PDUH 5H]XOW F punctul de frngere (VP) al FDUDFWHULVWLFLL E YDULD] vQ IXQF LH GH SR]L LD OXL 0 L nu coincide obligatoriu cu VP - XO GHWHUPLQDW SH FDUDFWHULVWLFD VWDWLF UHDO GLQ fig.2.1, diagrama a.
Q JHQHUDO SHQWUX GLRGHOH FX VLOLFLX VH FRQVLGHU 9P  9 L QHJOLMkQG 5d

(Rd XQJKLXO de segmentul (c).

WLQGH F WUH   GHFL FDUDFWHULVWLFD E GLQ FDGUDQXO , HVWH vQORFXLW

("! 35"54"0 332# 0 ) ('#& $% #" !  1    $ 1   !   

Q GRULQ D GH D VLPSOLILFD L PDL PXOW H[SXQHUHD DGHVHRUL VH FRQVLGHU

23
L

VP

ILJ  G VLWXD LH vQ FDUH GLRGD VH WUDQVIRUP

vQWU XQ vQWUHUXS WRU GHVFKLV

(IA=0) n intervalul (Vstr , 0), respectiv nchis (IA cu dioda.

IA (d) IA0 (b) Vstr I0 O Vp (a) (c)

FXUHQWXOXL vQ DFHVW XOWLP LQWHUYDO U PkQH vQ VDUFLQD HOHPHQWHORU GH FLUFXLW

 SHQWUX 9A9P

=0. Limitarea
vQVHULDWH

(b) (a)

M 1 = arctg Rd VA


)LJ &DUDFWHULVWLFD VWDWLF

D GLRGHL VHPLFRQGXFWRDUH L GLYHUVHOH HL DSUR[LP UL

 5HJLPXO GH FRPXWD LH DO WUDQ]LVWRUXOXL ELSRODU

&RQVLGHU P XQ WUDQ]LVWRU ELSRODU vQ FRQH[LXQH (& ILJ  L FDUDFWHULVWLFLOH VDOH GH LQWUDUH L GH LHLUH ILJ  L 

IC VCB

+VCC RC VCE

IB

VCE

VBE
)LJ  &HD PDL VLPSO VFKHP

I CB 0

VBE ON

VBE

cu TB n conexiune EC

Fig. 2.3. Caracteristicile de intrare ale unui TB n conexiune EC

SH FLUFXLWXO GH LHLUH DO WUDQ]LVWRUXOXL

6FULHP HFXD LD GUHSWHL VWDWLFH GH VDUFLQ

L R WUDV P SULQ W LHWXUL vQ SODQXO FDUDFWHULVWLFLORU GH LHLUH GLQ ILJ  2EVHUY P F 

din fig. 2.2: VCC=RCIC+VCE

(2.1)
GH VDUFLQ FRLQFLGH FX GUHDSWD GLQDPLF GH VDUFLQ SH FDUH

n cazul particular al schemei din fig. 2.2, din care lipsesc elementele reactive de
FLUFXLW GUHDSWD VWDWLF XUPHD] V VH GHSODVH]H vQ UHJLP GLQDPLF SXQFWXO GH IXQF LRQDUH DO WUDQ]LVWRUXOXL

24
3RUQLQG GH OD UHOD LLOH

IC NIE + ICB 0 ; IE = IC + IB, se deduce expresia lui IC:

IC =
NIB

(2.2) (2.3)
I B + I CB 0 1
N
VH SURGXFH DWXQFL FkQG VH DQXOHD] FXUHQWXO GH GLQ UHOD LD  DWXQFL FkQG

+ I CB 0
N

(2.4)

%ORFDUHD

WUDQ]LVWRUXOXL

colector (IC  DGLF DD FXP UH]XOW IB = - ICB 0. Zona de blocare VH VLWXHD]

GLQDPLF GH VDUFLQ 

(2.5)
 SULQ XUPDUH VXE FDUDFWHULVWLFD GH LHLUH L

FRUHVSXQ] WRDUH UHOD LHL  ILJ  GHFL VXE SXQFWXO $ GH SH GUHDSWD VWDWLF

IC VCC RC B B

RAN IB

SAT A A VCC IB=0 IB= -ICB O VCE

BL. VCE sat VCE (B)

)LJ &DUDFWHULVWLFLOH GH LHLUH DOH XQXL 7% vQ FRQH[LXQH (&

QDQRDPSHULORU SXWHP FRQVLGHUD F GH VDUFLQ  Q DFHDVW MRQF LXQHD SRODUL]DW 

ntruct la tranzistoarele cu siliciu ICB0 este neglijabil (de ordinul

]RQD GH EORFDUH VH vQWLQGH SUDFWLF SkQ GH SH GUHDSWD VWDWLF  ILJ  GHFL SkQ vQ SXQFWXO $ L GLQDPLF ]RQ  SRODUL] ULOH MRQF LXQLORU VH SUH]LQW FD vQ ILJ  DGLF

VXE

caracteristica IB BC

HVWH LQYHUV SRODUL]DW  GHFL EORFDW  LDU MRQF LXQHD

BE insuficient

GHFL WRW EORFDW 

DWHQ LD DVXSUD IDSWXOXL F WUDQ]LVWRUXO GLQ V ILH GH WLS ILJ  HVWH GH WLS npn, pn GHFL V VH GHVFKLG QXPDL L SH HPLWHU  FROHFWRU L QXPDL

$WUDJHP

FHHDFH IDFH FD MRQF LXQLOH GDF

BE

BC

DWXQFL FkQG WHQVLXQLOH VXQW DSOLFDWH FX  SH ED]

GLIHUHQ HOH GH SRWHQ LDO UHVSHFWLYH GHS HVF 9

&UHWHUHD OXL 9BE

peste valoarea VBE ON 0,6 V , conduFH OD FUHWHUHD ,B (vezi (IC NIB).

FDUDFWHULVWLFD GH LQWUDUH GLQ ILJ  L LPSOLFLW OD FUHWHUHD OXL ,C

("! 35"54"0 332# 0 ) ('#& $% #" !  1    $ 1   !   

3XQFWXO GH IXQF LRQDUH DO WUDQ]LVWRUXOXL VH YD GHSODVD GH OD $ GUHDSWD GH VDUFLQ  ILJ  WUDYHUVkQG UHJLXQHD DFWLY QRUPDO FDUDFWHULVWLFLORU GH LHLUH Q DFHDVW ILJ  DGLF MRQF LXQHD IDYRUL]HD] MRQF LXQHD 5$1 ]RQ  SRODUL] ULOH MRQF LXQLORU VH SUH]LQW

25
F WUH % SH

FD vQ

BE

HVWH GLUHFW L VXILFLHQW SRODUL]DW  GHFL GHVFKLV  LDU

BC

LQYHUV SRODUL]DW  $FHVW PRG GH SRODUL]DUH VSHFLILF SHQWUX 5$1 ELQHFXQRVFXWXOXL HIHFW GH WUDQ]LVWRU VWXGLDW vQ

SURGXFHUHD

FDGUXO

electronicii analogice.
IXQF LRQDUH DO WUDQ]LVWRUXOXL DMXQJH vQ % ILJ  GHFL OD OLPLWD 3RODUL] ULOH MRQF LXQLORU VH SUH]LQW &UHVFkQG L PDL PXOW 9BE SvQ OD DWLQJHUHD YDORULL 9BEsat

= 0,7 V, punctul de zonHL GH VDWXUD LH

FD vQ ILJ  DPEHOH MRQF LXQL ILLQG GLUHFW L

suficient polarizate, deci deschise.

+VCC IC=0 VBC=VBE-VCE<0 VBE<0,6V VCE=VCC RC IC>0 VBC=VBE-VCE<0 VBE 9 +VCC RC VCE=VCC-RCIC

)LJ  3RODUL] ULOH MRQF LXQLORU

)LJ  3RODUL] ULOH MRQF LXQLORU

unui TB blocat VCC RC VBC=0,6 V IC

VBEsat = 0,7 V

unui TB n RAN +VCC RC VCEsat = 0,1 V

)LJ  3RODUL] ULOH MRQF LXQLORU XQXL 7% OD VDWXUD LH 2EVHUYD LH FLUFXLWH vQ IXQF LRQDUHD HOHFWURQLFL VH RFXS vQ 'DF HOHFWURQLFD DQDORJLF F URUD vQ PRG ]RQ GH VLQJXUD ]RQHOH XQRU OLPLW D vQ OLQLDU  V VH L

-a ocupat cu studierea unor

vL HUD LPSXV GH YRUEL GHVSUH HIHFWXO vQ FDGUXO DFHOHLDL HYLWDWH FDUH GDWRULW QXPHULF  WUDQ]LVWRUXO EORFDUH GH WUHFHUH

FDGUXO

LQYDULDELO FDUH

WUDQ]LVWURUXOXL SRDWH

5$1

WUDQ]LVWRU L LPSOLFLW GHVSUH IHQRPHQXO GH DPSOLILFDUH GDF DQDORJLFH FX VWXGLHUHD EORFDUH GH VDWXUD LH VWDWLF vQ DOWD GRDU

HUDX vQ R

GLVWRUVLXQLORU GH QHOLQLDULWDWH SH FDUH OH LQWURGXFHDX HOHFWURQLFD GLJLWDO FLUFXWH FRPXWD LH VDWXUD LH FRPXW GLQWU R VWDUH EORFDUH

VDWXUD LH ]RQ

UHJLXQHD DFWLY FRPXWD LH PDUL

QRUPDO

FDUDFWHULVWLFLORU

VDOH ILLQG

LPSRVLELO GH HYLWDW L FDUH WUHEXLH WUDQ]LWDW

FkW PDL UHSHGH GDF

VH GRUHVF YLWH]H GH

3H ED]D FHORU SUH]HQWDWH SXWHP DILUPD F

XQ WUDQ]LVWRU FDUH IXQF LRQHD]

vQ

UHJLP GH FRPXWD LH SRDWH IL WHRUHWLF vQORFXLW FX XQ vQWUHUXS WRU . D F UXL VWDUH HVWH

26
GHVFKLV GDF WUDQ]LVWRUXO HVWH EORFDW YH]L ILJ D UHVSHFWLY vQFKLV GDF

tranzistorul este saturat (vezi fig.2.8 b).

+VCC IC=0 K RC VCE=VCC IC = VCC RC K +VCC RC VCE=0

a) TB blocat

b) TB saturat

)LJ  7% vQ UHJLP GH FRPXWD LH vQORFXLW FX XQ vQWUHUXS WRU

ntr-DGHY dreSWXQJKLXODU

U

OXkQG

vQ

FRQVLGHUD LH LQWHUQ

IXQF LRQDUHD

UHDO 

vQ

UHJLP

GLQDPLF

WUDQ]LVWRUXOXL VFKHPD GLQ ILJXUD  YD WUHEXL FRPSOHWDW QXPDL UROXO GH D OLPLWD FXUHQWXO GH ED] YG GH UH]LVWHQ DO WUDQ]LVWRUXOXL

FX JHQHUDWRUXO GH WHQVLXQH

5G SUH]HQWDW vQ ILJ 5H]LVWHQ D 5B

are

+VCC iC CB iB RB RG vG vCE
(c) (b)

vG
(a)

RC

iB

t1 CB

t2

0 ICsat iC 0,9 ICsat 0,1 ICsat 0

t t tcr ts tc

)LJ  6FKHP

SHQWUX VWXGLHUHD

)LJ  'LDJUDPH SHQWUX LOXVWUDUHD UHJLPXOXL GH FRPXWD LH DO 7%

UHJLPXOXL GH FRPXWD LH DO 7%

'LDJUDPHOH GH VHPQDO GLQ ILJ  LOXVWUHD] LPSXOV GH FXUHQW ILLQG XRU GH REVHUYDW IDSWXO F IRUP GH XQG  SUH]LQW R HYROX LH LC

U VSXQVXO WUDQ]LVWRUXOXL

OD XQ

, departe de a-O

XUP UL S

PXOW GLIHULW  $VWIHO

momentul t1 un salt pozitiv rapid, iC QX UHDF LRQHD] LQVWDQWDQHX FL GXS XQ WLPS GH ntrziere (t XUPDW GH R FUHWHUH UHODWLY OHQW Wer SvQ OD DWLQJHUHD YDORrii 0,9ICsat ,
GXS FDUH WUDQ]LVWRUXO LQWU  vQ VIkULW vQ VDWXUD LH 3ULQ XUPDUH GHL FRPDQGD GH SULQ VDOWXO SR]LWY DO OXL LB din momentul t1, executare acestei comenzi, deci FRPXWD LD GLUHFW are loc ntr-un interval de timp: tcd=t+ter. (2.6) WUHFHUH GLQ EORFDUH vQ VDWXUD LH D IRVW GDW

GHL LB vQUHJLVWUHD]

e iB ca
OD

("! 35"54"0 332# 0 ) ('#& $% #" !  1    $ 1   !   

6LPLODU GHL FRPDQGD SHQWUX FRPXWD LD LQYHUV G OD PRPHQWXO W2

27
GLQ VDWXUD LH vQ EORFDUH VH

aceasta se produce ntr-un interval de timp: (2.7)

WLPSXO GH F GHUH 'XS FXP VH SRDWH REVHUYD VH GDWRUHD] WLPSXOXL MRQF LXQL DOH DVWIHO OD VDWXUD LH FHOH GRX

GLQ ILJ  F vQWkU]LHUHD FHD PDL PDUH OD FRPXWD LD LQYHUV GH VWRFDUH D F UXL H[LVWHQ VH H[SOLF

tci=ts+tc, unde tS este timpul de stocare, iar tc -

tranzistorului sunW

GLUHFW SRODUL]DWH Y ILJ  PRWLY SHQWUX FDUH DUH ORF R GXEO PDMRULWDUL HOHFWURQL GLQ FHOH GRX ]RQH H[WUHPH vQ

LQMHF LH GH SXUW WRUL GH VDUFLQ

zona bazei (v. fig. 2.11).

E )LJ  ,OXVWUDWLY

p B

+ -

SHQWUX DSDUL LD WLPSXOXL GH VWRFDUH

ntrucW

ED]D HVWH GH WLS S HOHFWURQLL GLIX]D L GHYLQ DLFL SXUW WRUL GH VDUFLQ V vQFHDS vQ PRPHQWXO W2

PLQRULWDUL vQ H[FHV D F URU HYDFXDUH XUPHD]

al primirii
Wcr

FRPHQ]LL GH EORFDUH L YD GXUD XQ LQWHUYDO GH WLPS HJDO FX Ws L Wci DF LRQkQG DVXSUD FRPSRQHQWHORU ORU

.
PDL LPSRUWDQWH

&UHWHUHD YLWH]HL GH FRPXWD LH D WUDQ]LVWRUXOXL ELSRODU SUHVXSXQH PLFRUDUHD FHORU

timpilor tcd respectiv ts.

VSHFLILF

6ROX LLOH

SHQWUX

PLFRUDUHD WLPSLORU GH FRPXWD LH

YL]HD]

DWkW SURLHFWDUHD

D FLUFXLWHORU HOHFWURQLFH FkW L WHKQRORJLD GH IDEULFD LH D WUDQ]LVWRDUHORU GLQ

FRPSRQHQ D ORU

Astfel, R VROX LH SHQWUX PLFRUDUHD Wcd o constituie conectarea n paralel cu RB ILJ  D XQHL FDSDFLW L &B FX UROXO GH D XQWD VFXUWFLUFXLWD vQ UHJLP GLQDPLF (la momentele de salt t1 L W2 UH]LVWHQ D 5B L GH D UHDOL]D vQ DFHVW PRG XQ FXUHQW GH
ED] V X R HYROX LH LB PDL PDUH ILJ  E  GHVHQDW FX OLQLH vQWUHUXSW  FDUH V PDL UDSLG D OXL Lc L SULQ XUPDUH V GHWHUPLQH R PLFRUDUH D WLPSXOXL GH FUHWHU

IRU H]H OD UkQGXO

e.
YDULD LD UDSLG GLQ

ntr-DGHY U UHDFWDQ D FDSDFLWLY ;CB VLPWH momentul t1 FD SH DFHHD D XQXL VHPQDO GH IUHFYHQ vQDOW 

X CB

1 2fC B

0,
UH]LVWHQ D 5B LB

(2.8)

L SURGXFH XQ HIHFW GH XQWDUH D UH]LVWHQ HL 5B 'XS

FRQVXPDUHD VDOWXOXL GLQ

momentul t1 i intrarea lui vG n palierul t1t2

SULQFLSDOD FDOH GH DVLJXUDUH D FXUHQWXOXL GH

ED]

redevine treptat , deoarece pentru f=0,

SULQ vPSLHGLFDUHD

XCB

YH]L UHOD LD 

0LFRUDUHD WLPSXOXL GH FRPXWD LH LQYHUV

LQWU ULL vQ VDWXUD LH D WUDQ]LVWRUXOXL DYkQG FD HIHFW HOLPLQDUHD WLPSXOXL GH VWRFDUH 3UH]HQW P vQ FRQWLQXDUH  VFKHPH ILJ  L  FDUH DVLJXU DFHVW GH]LGHUDW

 Wci

, VH UHDOL]HD]

28

Schema din fig. 2.12 s-D

IRVW GLYL]DW vQ GRX 

RE LQXW GLQ FHD GLQ ILJ  vQ FDUH UH]LVWHQ D 5B

SXQFWXO FRPXQ DO UH]LVWHQ HORU 5B

RB=RB 1+RB 2,

L 5B

2,

(2.9) fiind conectat la colectorul tranzistorului

VD

prin intermediul unei diode.

VD D IB RB 1 RB 2 VCE VBE VBE (a)
)LJ  2 PHWRG GH HOLPLQDUH

VCE

)LJ  2 DOW

a timpului de stocare

(b) e eliminare a timpului de stocare

PHWRG G

$SOLFvQG . ,, SH RFKLXO GH FLUFXLW GLQ ILJ  RE LQHP L GLQ FRQGL LD GH GHVFKLGHUH D GLRGHL

VD=RB2IB + VBE VCE, VD 

9

(2.10) (2.11)
9

rezuOW

RB2IB + VB E - VCE 

(2.12)

LQkQG VHDPD GH IDSWXO F

VB EON 0,6 V 

FRQGL LD GH GHVFKLGHUH D GLRGHL

devine: VC E 5B 2 IB. (2.13) Prin urmare, alegndu-l convenabil pe RB2, se poate aranja ca n momentul n care VC E YH]L ILJ  VFDGH VXE R DQXPLW YDORDUH VCE (B) = R B 2 I B > VC E (B) = VCE sat , (2.14)
GLRGD ' V VH GHVFKLG L FXUHQWXO GH ED] FRUHVSXQ] WRDUH SXQFWXOXL %  Q DFHVW PRG VDWXUD LD HVWH HYLWDW  L ,B V U PkQ IL[DW OD YDORDUHD

ar valorile I C ( B) ,

VC E ( B)

VXQW IRDUWH DSURSLDWH GH FHOH FRUHVSXQ] WRDUH SXQFWXOXL % GHFL VDWXUD LHL

UHDOL]HD] GHVFULV

Schema din fig. 2.13, care este de fapt schema unui tranzistor Schottky, HYLWDUHD LQWU ULL vQ VDWXUD LH D WUanzistorului ntr-R PDQLHU VLPLODU FX FHD
PDL VXV

LQkQG

ntr-DGHY U VFULLQG . ,, SH VFKHPD GLQ ILJ  D RE LQHP V D = V B E - V C E,

VHDPD GH IDSWXO F OD GLRGD 6FKRWWN\ WHQVLXQHD GH

(2.15)
HVWH  9

SUDJ

FRQGL LD GH GHVF

VDX

hidere a diodei se poate scrie: VD=VB E VC E  9 LQkQG VHDPD GH IDSWXO F VBE ON 0,6 V : VC E
 9

(2.16) (2.17)

7("GE F35A"5S"0D 9@3732#E 0 F9Q (P#& HI #"7 9 G F@ 6 R D C E H R B7 9 E 9CBG A @ED 7 C B A 9 87

6H VDWLVI FXW FDSDFLW vQ ED] REVHUY L vQ DFH XRU F  vQWUXFkW

29
FRQGL LD  HVWH

VC ESat = 0,1 0,2 V 

st caz.
UHGXFHUHD D FROHFWRUXOXL L FUHWHUHD YLWH]HL GH UHFRPELQDUH D SXUW WRULORU

0LFRUDUHD WLPSLORU GH FRPXWD LH SULQ VROX LL WHKQRORJLFH YL]HD] LL GH EDULHU SULQ GRSDUHD DFHVWHLD FX DWRPL GH DXU

 5HJLPXO GH FRPXWD LH DO WUD

&RQVLGHU P FRQH[LXQH VXUV ILJ  L  XQ WUDQ]LVWRU XQLSRODU

nzistorului unipolar
WLS 7(&026 FX FDQDO LQGXV vQ

GH

FRPXQ  ILJ   L FDUDFWHULVWLFLOH VDOH GH WUDQVIHU L GH LHLUH

+VDD iD RD T1 RG vG CP vGS vDS Et. urm. (T2)

)LJ  6FKHP SHQWUX VWXGLHUHD

ID

VP

VGS

UHJLPXOXL GH FRPXWD LH DO 78

Fig. 2.15. Caracteristica de transfer a TU

ID VDD RD VDSsat=VGS-VP B

Regiunea de nchidere

VGS

VGS=VP 0 Bl

A VDD

VDS

)LJ  &DUDFWHULVWLFLOH GH LHLUH DOH 78

30
6FULHP HFXD LD GUHSWHL VWDWLFH GH VDUFLQ SH FLUFXLWXO GH LHLUH DO WUDQ]LVWRUXOXL

L R UHSUH]HQW P SULQ W LHWXUL vQ SODQXO FDUDFWHULVWLFLORU GH LHLUH GLQ ILJ  &D L vQ FD]XO WUDQ]LVWRUXOXL ELSRODU FRQVLGHUDW vQ SDUDJUDIXO DQWHULRU REVHUY P F VWDWLF GH VDUFLQ FRLQFLGH FX FHD GLQDPLF SH FDUH XUPHD] V GH IXQF LRQDUH vQ UHJLP YDULDELO GUHDSWD VH GHSODVH]H SXQFWXO

din fig. 2.14: VDD = RDID + VDS

(2.18)

Conectnd la intrarea circuitului din fig. 2.14 un generator de tensiune

GUHSWXQJKLXODU OD LHLUH RE LQHP GLDJUDPHOH GH VHPQDO GLQ ILJ YG GH UH]LVWHQ LQWHUQ 5G L LQkQG VHDPD GH FDSDFLW LOH FDUH DSDU

vG

YGS

(a)

Vp 0 vDS VDD t1 t2 t

(b)

tcd

tci

Fig. 2.17. Diagrame pentru ilustrarea regimului dinamic al TU

(VWH HYLGHQW IDSWXO F UHJLPXULOH YGS WUDQ]LWRULL JHQHUDWH GH VDOWXULOH SR]LWLYH L WUH

negative SH FDUH OH vQUHJLVWUHD]

WUDQ]LVWRDUH FD UHJLPXUL GH vQDOW

IUHFYHQ

n momentele t1 L W2 VXQW LQWHUSUHWDWH GH F

 PRWLY SHQWUX FDUH WUDQ]LVWRUXO 71 IUHFYHQ GLQ ILJ 

din

VFKHPD GLQ ILJ  FD L WUDQ]LVWRUXO 72 GLQ HWDMXO XUP WRU QHGHVHQDW H[SOLFLW

pot fi QORFXLWH FX VFKHPHOH ORU HFKLYDOHQWH GH vQDOW Cgd

D Cds S

VGS S

Cgs

gmVGS

VDS

)LJ  6FKHPD HFKLYDOHQW 3ULQ XUPDUH OD LHLUHD FLUFXLWXOXL GLQ

OD vQDOW ILJ

IUHFYHQ VH YD

D 78 YHGHD QX QXPDL



capacitatea pDUD]LW

&p GDWRUDW

FRQH[LXQLORU FL L FDSDFLWDWHD GH LHLUH GUHQ

7("GE F35A"5S"0D 9@3732#E 0 F9Q (P#& HI #"7 9 G F@ 6 R D C E H R B7 9 E 9CBG A @ED 7 C B A 9 87

VXUV D OXL 71, Cds1 vPSUHXQ T2 GLQ HWDMXO XUP WRU &gs2 . 5H]XOW FX FDSDFLWDWHD GH LQWUDUH JULO VLWXDW vQWUH GUHQ

31

-VXUV

D WUDQ]LVWRUXOXL

R FDSDFLWDWH HFKLYDOHQW

L VXUV 

Cech = Cp + Cds 1 + Cgs 2, avnd o valoare de aproximativ 5 pF.

(2.19)

n intervalul 0 t1 , fig. 2.17, vGS < Vp L DD FXP UH]XOW GLQ FDUDFWHULVWLFD de transfer din fig. 2.15, ID  GHFL WUDQ]LVWRUXO HVWH EORFDW L 9DS=+VDD (vezi fig. 2.16). Capacitatea Cech VH YD vQF UFD SULQ 5D la valoarea +VDD FX R FRQVWDQW GH timp = R D C ech . n momentul t1 se produce saltul pozitiv al tensiunii de intrare vGS, salt care GHS HWH YDORDUHD OXL 9p L GHVFKLGH WUDQ]LVWRUXO 7 1. Capacitatea Cech VH GHVFDUF SH UH]LVWHQ D GUHQ -VXUV Ut D WUDQ]LVWRUXOXL vQ VWDUH GH FRQGXF LH FX R FRQVWDQW GH timp (2.20) 1 = rt C ech , FRUHVSXQ] WRDUH FRPXWD LHL GLUHFWH a tranzistorului (din starea de blocare n starea de conduc LH 7HQVLXQHD GH LHLUH YDS VH DSURSLH GH  SH P VXU FH SXQFWXO GH
IXQF LRQDUH VH GHSOHDVHD] GH OD $ F WUH % ILJ 

n tot intervalul t 1 t 2 , tranzistorul T1 conduce, aflndu-se n regiunea

RKPLF  EORFKHD]

FRUHVSXQ] WRDUH

n momentul t2 al producerii saltului negativ al tensiunii de intrare, T1 se L &ech VH YD UHvQF UFD SULQ 5D la valoarea +VDD cu constanta de timp: (2.21) = R D C ech , 2
FRPXWD LHL LQYHUVH D WUDQ]LVWRUXOXL GLQ VWDUHD GH FRQGXF LH WRDUH UHJLXQLL RKPLFH vQ VWDUHD GH EORFDUH FX UHOD LLOH DSUR[LPDWLYH

corespuQ]

'XUDWD FRPXWD LHL GLUHFWH L LQYHUVH VH FDOFXOHD]

t cd 2,3 t ci 2,3
2

1 = 2,3 rt C ech ;

ntruct rt  . t c i 10 t c d ,

= 2,3 R D C ech .
 LDU

(2.22) (2.23)
 UH]XOW F 

RD .

(2.24) -O LOXVWU
P vQ ILJ  E

IDSW SH FDUH DP vQFHUFDW V

+VDD RD K a) Blocat ID=0 VDS=VDD RD K

+VDD ID = VDD RD

VDS=0

b) Saturat

)LJ  78 vQ UHJLP GH FRPXWD LH vQORFXLW FX XQ vQWUHUXS WRU

32
&D L vQ FD]XO WUDQ]LVWRUXOXL ELSRODU VH REVHUY  ILJ  SRVLELOLWDWHD

DSUR[LP ULL FRRUGRQDWHORU SXQFWHORU $ L % FX FHOH DOH LQWHUVHF LLORU FX D[HOH GH FRRUGRQDWH D GUHSWHL VWDWLFH L GLQDPLFH GH VDUFLQ  IDSW FDUH vQWUHUXS WRU . GHVFKLV YH]L ILJ  SHUPLWH R FRUHFW DVLPLODUH D IXQF LRQ ULL WUDQ]LVWRUXOXL XQLSRODU vQ UHJLP GH FRPXWD LH FX DFHHD D XQXL

- atunci cnd tranzistorul este blocat, respectiv

vQ UHJLXQHD RKPLF 

nchis - DWXQFL FkQG WUDQ]LVWRUXO VH DIO

 &RPSDUD LH vQWUH WUDQ]LVWRUXO XQLSRODU L

3UH]HQW P vQ WDEHOXO  R LQWHUHVDQW

cel bipolar
vQWUH WUDQ]LVWRDUHOH

FRPSDUD LH

XQLSRODUH L FHOH ELSRODUH

Tab. 2.1

Nr. crt. 1

&ULWHULXO GH FRPSDUD LH

Tranzistor unipolar (TU) 35 De 5 10 ori mai mic 0,0009 mm2 1012 1018

Tranzistor bipolar (TB) 140

2EVHUYD LL

1XP UXO GH RSHUD LL GH ED] vQ SUR

cesul de
GH FRVW

IDEULFD LH

Avantaj TU Avantaj TU Avantaj TU Avantaj TU Avantaj TU Avantaj TU Avantaj TB Avantaj TB Avantaj TB

Rebuturi SUH
6XSUDID

0,04 mm2 1 . Cu circuite de

SRODUL]DUH L

RFXSDW

SH

placheta de siliciu 4
5H]LVWHQ D GH LQWUDUH

Cuplajul dintre etaje Realizarea de

UH]LVWHQ H GH YDORUL

Direct Rezisten
DFWLY 026

depl. de nivel 6 Nu pot fi realizate 1 

mari
5H]LVWHQ GH WUHFHUH D

tranzistorului saturat (rt) Factori de zgomot

 .

mare

mic

Timp de comutare

mare

mai mic

U("ec d35Y"5q"0b WX3U32#c 0 dWi (h#& fg #"U W e dX T p b a c f p `U W c Wa`e Y Xcb U a ` Y W VU

6H REVHUY FX XXULQ F SULYHWH WLPSLL GH FRPXWD LH vQ WLPS FH 7(&026 YHGHUH DO SXWHULL FRQVXPDWH DO GHQVLW L GH DVDPEODUH  DO SUH XOXL GH FRVW HWF

33

WUDQ]LVWRDUHOH ELSRODUH VXQW VXSHULRDUH vQ FHHD FH

-urile sunt superioare din punct de

2.5. 5HSUH]HQWDUHD HOHFWULF

n paragrafele anterioare s-a

D YDULDELOHORU ERROHHQH

demonstrat

corectitXGLQHD

DSUR[LP ULL

IXQF LRQ ULL XQXL WUDQ]LVWRU ELSRODU VDX XQLSRODU vQ UHJLP GH FRPXWD LH FX DFHHD D XQXL vQWUHUXS WRU

Referindu-QH
H[WLQVH L DVXSUHD GDU GLIHU FRQVWDW P

vQ FRQWLQXDUH OD WUDQ]LVWRUXO ELSRODU FRQFOX]LLOH SXWvQG IL XRU FHOXL XQLSRODU REVHUY P F WHQVLXQLOH GH LHLUH vQ VWDUH GH

VDWXUD LH VXQW SUDFWLF HJDOH FX ]HUR LQGLIHUHQW GH WLSXO WUDQ]LVWRUXOXL QSQ VDX SQS FD SRODULWDWH vQ FD]XO vQ FDUH WUDQ]LVWRUXO HVWH EORFDW WDE  YDORDUHD vQ FD]XO ORJLF  VW ULL GH GH WLS EORFDUH L  VW ULL GH VDWXUD LH F  WUDQ]LVWRUXOXL $ORFvQG

npn, nivelului celui mai ridicat de tensiune, +VCC, notat cu H (de la High = Sus), i corespunde 1 logic, iar celui mai cobort, 0V, notat cu L (de la Low = Jos) -  ORJLF 6SXQHP F DFHVW PRG GH DORcare corespunde logicii pozitive 'LPSRWULY  vQ FD]XO WUDQ]LVWRUXOXL GH WLS pnp, nivelului celui mai cobort de tensiune (-VCC vL FRUHVSXQGH YDORDUHD ORJLF FHD PDL ULGLFDW  DGLF  ORJLF GHFL QH DIO P vQ FD]XO XQHL logici negative .
Tab. 2.2. ExplicaWLY SHQWUX FHOH GRX
WLSXUL GH ORJLF  SR]LWLY L QHJDWLY

Tip tranzistor

Schema
HOHFWULF

6FKHPD DSUR[LPDWLY

Blocare
+VCC RC VCE=+VCC K

6DWXUD LH

Simboluri logice alocate

V
+VCC

Tip
ORJLF

+VCC

+VCC RC

npn

RC

VCE

VCE=0 Bl Sat

1 0

3R]LWLY

-VCC

-VCC RC K VCE=-VCC K

-VCC RC

V
1HJDWLY

pnp

RC

VCE

Bl Sat VCE=0

1 0
-VCC

Q SR]LWLY 

FHOH

FH

XUPHD]

YRP

SUH]HQWD

QXPDL

FLUFXLWH

FDUH

OXFUHD]

vQ

ORJLF