Single-Stage Integrated-

Circuit Amplifiers

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 Outline
VLSI Fabrication Technology
Comparison of the MOSFET and the BJT
IC Biasing Current Sources, Current Mirrors, and Current-Steering
Circuits
High-Frequency Response General Considerations
The Common-Source and Common-Emitter Amplifiers with Active
Loads
High-Frequency Response of the CS and CE Amplifiers
The Common-Gate and Common-Base Amplifiers with Active Loads
The Cascode Amplifier
The CS and CE Amplifiers with Source (Emitter) Degeneration
The Source and Emitter Followers
Some Useful Transistor Pairings
Current-Mirror Circuits with Improved Performance
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 A CMOS inverter
Schematic Layout

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 A CMOS inverter

Cross section

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 A CMOS inverter
Photomasks
(a) Define n-well diffusion (mask #1) (b) Define active regions (mask #2)

Dark-field mask Clear-field mask

Drawn geometries Drawn geometries
are kept as patterns are opened as
negativeimages windows
positiveimages

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 A CMOS inverter
Photomasks
(e) n+ diffusion (mask #4) (f) p+ diffusion (mask #5)

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 A CMOS inverter
Photomasks
(g) Contact holes (mask #6)

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 Discrete vs. Integrated
Components

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The pictures are copied from http://140.114.23.141/htdocs/course/922_EE226002/Introduction.pdf , S.H.Hsu
 Discrete vs. Integrated
Products

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The pictures are copied from http://140.114.23.141/htdocs/course/922_EE226002/Introduction.pdf , S.H.Hsu
 Outline
VLSI Fabrication Technology
Comparison of the MOSFET and the BJT
IC Biasing Current Sources, Current Mirrors, and Current-Steering
Circuits
High-Frequency Response General Considerations
The Common-Source and Common-Emitter Amplifiers with Active
Loads
High-Frequency Response of the CS and CE Amplifiers
The Common-Gate and Common-Base Amplifiers with Active Loads
The Cascode Amplifier
The CS and CE Amplifiers with Source (Emitter) Degeneration
The Source and Emitter Followers
Some Useful Transistor Pairings
Current-Mirror Circuits with Improved Performance
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 Typical Values of MOSFET Parameters

0.8m 0.5m 0.25m 0.18m

Parameter NMOS PMOS NMOS PMOS NMOS PMOS NMOS PMOS

tox (nm) 15 15 9 9 6 6 4 4
Cox (fF/m2) 2.3 2.3 3.8 3.8 5.8 5.8 8.6 8.6
(cm2/Vs) 550 250 500 180 460 160 450 100
Cox (A/V2) 127 58 190 68 267 93 387 86
Vt0 (V) 0.7 -0.7 0.7 -0.8 0.43 -0.62 0.48 -0.45
VDD (V) 5 5 3.3 3.3 2.5 2.5 1.8 1.8
|VA
|(V/m) 25 20 20 10 5 6 5 6
Cov (fF/m) 0.2 0.2 0.4 0.4 0.3 0.3 0.37 0.33

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c.f.: Microelectronic Circuits, 5th ed., Sedra/Smith
 Typical Values of IC BJT Paramemters

Standard High-Voltage Process Advanced Low-Voltage Process

Parameter npn Lateral pnp npn Lateral pnp
AE (m2) 500 900 2 2
IS (A) 5 10-15 2 10-15 6 10-18 6 10-18
0 (A/A) 200 50 100 50
VA (V) 130 50 35 30
VCE0 (V) 50 60 8 18

F 0.35ns 30ns 10ps 650ps

Cje0 1pF 0.3pF 5fF 14fF
C0 0.3pF 1pF 5fF 15fF
rx () 200 300 400 200

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c.f.: Gray et al. (2000)
I-V Characteristics (iD vGS v.s. iC vBE)
NMOS npn

Transconductor

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Channel-length modulation v.s. Early effect

NMOS npn

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 Low-Frequency Operation
NMOS npn
model

T model

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 Low-Frequency Operation
NMOS npn
model

Transconductance gm
I I
gm D gm C
VOV 2 VT
W
g m
n Cox
VOV
L

g m 2
n Cox
W

ID
L 16
 Low-Frequency Operation
NMOS npn
model

Input resistance

r
gm
Output resistance ro

VA VA' L VA
ro ro
ID ID IC 17
 Low-Frequency Operation
NMOS npn
Intrinsic Gain A0 gmro VA
V
A0
A0 A VT
VOV 2
2VA' L
A0
VOV
VA' 2nCoxWL
A0
ID

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 High-Frequency Operation
NMOS npn

Capacitances
C Cde C je
2
C gs WLCox WLov Cox Cde F g m
3
C je 2C je 0
C gd WLovCox
m
VCB
C C0 1

VC 0 19
 High-Frequency Operation
NMOS npn

Unity-gain Frequency (Transition Frequency) fT

gm gm
fT
2( C gs C gd )
fT
2( CC )
2
for C gs C gd and C gs WLC ox for C C and C C de
3
1.5 nVOV 2 nVT
fT fT
2L2 2WB 2 20
 High-Frequency Operation
Frequency response of a CS amplifier loaded with CL

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 High-Frequency Operation
Increasing ID or W/L increases the bandwidth

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