BUZ 73

SIPMOS ® Power Transistor

• N channel
• Enhancement mode
• Avalanche-rated

Pin 1 Pin 2 Pin 3

G D S

Type VDS ID RDS(on) Package Ordering Code

BUZ 73 200 V 7A 0.4 Ω TO-220 AB C67078-S1317-A2
Maximum Ratings
Parameter Symbol Values Unit

Continuous drain current ID A

TC = 28 ˚C 7
Pulsed drain current IDpuls
TC = 25 ˚C 28
Avalanche current,limited by Tjmax IAR 7
Avalanche energy,periodic limited by Tjmax EAR 6.5 mJ
Avalanche energy, single pulse EAS
ID = 7 A, VDD = 50 V, RGS = 25 Ω
L = 3.67 mH, Tj = 25 ˚C 120
Gate source voltage VGS ± 20 V
Power dissipation Ptot W
TC = 25 ˚C 40
Operating temperature Tj -55 ... + 150 ˚C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC ≤ 3.1 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Data Sheet 1 05.99

 BUZ 73

Electrical Characteristics, at Tj = 25˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics
Drain- source breakdown voltage V (BR)DSS V
VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C 200 - -
Gate threshold voltage V GS(th)
VGS=VDS, ID = 1 mA 2.1 3 4
Zero gate voltage drain current IDSS µA
VDS = 200 V, V GS = 0 V, Tj = 25 ˚C - 0.1 1
VDS = 200 V, V GS = 0 V, Tj = 125 ˚C - 10 100
Gate-source leakage current IGSS nA
VGS = 20 V, VDS = 0 V - 10 100
Drain-Source on-resistance RDS(on) Ω
VGS = 10 V, ID = 4.5 A - 0.3 0.4

Data Sheet 2 05.99

 BUZ 73

Electrical Characteristics, at Tj = 25˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics
Transconductance gfs S
VDS≥ 2 * ID * RDS(on)max, ID = 4.5 A 3 4.2 -
Input capacitance Ciss pF
VGS = 0 V, V DS = 25 V, f = 1 MHz - 400 530
Output capacitance Coss
VGS = 0 V, V DS = 25 V, f = 1 MHz - 85 130
Reverse transfer capacitance Crss
VGS = 0 V, V DS = 25 V, f = 1 MHz - 45 70
Turn-on delay time td(on) ns
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 10 15
Rise time tr
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 40 60
Turn-off delay time td(off)
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 55 75
Fall time tf
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 30 40

Data Sheet 3 05.99

 BUZ 73

Electrical Characteristics, at Tj = 25˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode

Inverse diode continuous forward current IS A

TC = 25 ˚C - - 7
Inverse diode direct current,pulsed ISM
TC = 25 ˚C - - 28
Inverse diode forward voltage V SD V
VGS = 0 V, IF = 14 A - 1.3 1.7
Reverse recovery time trr ns
VR = 100 V, IF=lS, diF/dt = 100 A/µs - 200 -
Reverse recovery charge Qrr µC
VR = 100 V, IF=lS, diF/dt = 100 A/µs - 0.6 -

Data Sheet 4 05.99

 BUZ 73

Power dissipation Drain current

Ptot = ƒ(TC) ID = ƒ(TC)
parameter: VGS ≥ 10 V

45 7.5
A
W
6.5

Ptot ID 6.0
35
5.5

30 5.0
4.5
25 4.0
3.5
20
3.0

15 2.5
2.0
10 1.5
1.0
5
0.5
0 0.0
0 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 120 ˚C 160
TC TC

Safe operating area Transient thermal impedance

ID = ƒ(VDS) Zth JC = ƒ(tp)
parameter: D = 0.01, TC = 25˚C parameter: D = tp / T

10 2 10 1

K/W
t = 22.0µs
A p

ID ZthJC
10 0
D
/I

100 µs
10 1
DS
=V
n)
(o
DS
R

1 ms 10 -1
D = 0.50
0.20
10 0 0.10
10 ms
0.05
10 -2
0.02

single pulse 0.01

DC

10 -1 10 -3
0 1 2 -7 -6 -5 -4 -3 -2 -1 0
10 10 10 V 10 10 10 10 10 10 10 s 10
VDS tp

Data Sheet 5 05.99

 BUZ 73

Typ. output characteristics Typ. drain-source on-resistance

ID = ƒ(VDS) RDS (on) = ƒ(ID)
parameter: tp = 80 µs parameter: VGS

16 1.3
Ptot = 40W
l kj i h g
Ω a b c d e
A
VGS [V] 1.1
ID f a 4.0 RDS (on)
1.0
12 b 4.5
c 5.0 0.9
d 5.5
10 e 0.8
e 6.0
f 6.5 0.7
8 g 7.0
0.6
d h 7.5
i 8.0
6 0.5
j 9.0 f
c g
k 10.0 0.4 h
j i
4 l 20.0
0.3 k

b 0.2
2 VGS [V] =
a b c d e f g h i j k
a 0.1 4.5
4.0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
0 0.0
0 2 4 6 8 V 11 0 2 4 6 8 10 A 14
VDS ID

Typ. transfer characteristics ID = f (V GS) Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 µs parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max V DS≥2 x ID x RDS(on)max

13 6.0

A S
11 5.0
ID gfs
10
4.5
9
4.0
8
3.5
7
3.0
6
2.5
5
2.0
4
1.5
3

2 1.0

1 0.5
0 0.0
0 1 2 3 4 5 6 7 8 V 10 0 2 4 6 8 A 12
VGS ID

Data Sheet 6 05.99

 BUZ 73

Drain-source on-resistance Gate threshold voltage

RDS (on) = ƒ(Tj ) VGS (th) = ƒ(Tj )
parameter: ID = 4.5 A, VGS = 10 V parameter: VGS = VDS, ID = 1 mA

1.9 4.6

Ω V 98%
4.0
1.6
RDS (on) VGS(th)
3.6
1.4
3.2 typ

1.2
2.8

1.0 2.4 2%

2.0
0.8
98% 1.6
0.6
typ 1.2
0.4
0.8

0.2 0.4

0.0 0.0
-60 -20 20 60 100 ˚C 160 -60 -20 20 60 100 ˚C 160
Tj Tj

Typ. capacitances Forward characteristics of reverse diode

C = f (VDS) IF = ƒ(VSD)
parameter:VGS = 0V, f = 1MHz parameter: Tj , tp = 80 µs

10 1 10 2

nF A
C IF

10 0 10 1

Ciss

10 -1 10 0
Coss Tj = 25 ˚C typ
Tj = 150 ˚C typ
Crss
Tj = 25 ˚C (98%)
Tj = 150 ˚C (98%)

10 -2 10 -1
0 5 10 15 20 25 30 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VDS VSD

Data Sheet 7 05.99

 BUZ 73

Avalanche energy EAS = ƒ(Tj) Typ. gate charge

parameter: ID = 7 A, VDD = 50 V VGS = ƒ(QGate)
RGS = 25 Ω, L = 3.67 mH parameter: ID puls = 14 A

130 16

mJ
V
110
EAS VGS
100
12
90

80 10
0,2 VDS max 0,8 VDS max
70
8
60

50 6
40
4
30

20
2
10
0 0
20 40 60 80 100 120 ˚C 160 0 4 8 12 16 20 24 28 32 nC 38
Tj Q Gate

Drain-source breakdown voltage

V(BR)DSS = ƒ(Tj)

240

230
V(BR)DSS
225

220

215

210

205

200

195

190

185
180
-60 -20 20 60 100 ˚C 160
Tj

Data Sheet 8 05.99