CONDUCTORS, DIELECTRICS,

AND CAPACITANCE
 CURRENT AND CURRENT
DENSITY
• Current - is defined as electric charges in
motion or defined as a rate of movement
of a charge passing in a given reference
point (or crossing in a given reference
plane) of one coulomb per second
 CURRENT AND CURRENT
DENSITY
• Current - is defined as the motion of
positive charges (even though conduction
in metals takes place through the motion
of electrons). The unit of current is ampere
(A) and current is symbolized by I,

dQ
I ( convention current)
dt
 CURRENT AND CURRENT
DENSITY
• Consider the field theory, “the events
occurring at a point was the main
concerned rather than within the large
region”, and in this case the concept of
current density were important matter.
• Current density - is defined as a vector
represented by J and measured in
amperes per square meter (A/m2).
• The increment of current ΔI crossing an
incremental surface, ΔS, is given as;
 CURRENT AND CURRENT
DENSITY

I  J N S ( normal to the current

density)
or,
I  J  S ( current density is not
perpendicular to the
surface)
 CURRENT AND CURRENT
DENSITY
• And the total current is obtained by
integrating,

I   J  dS ( convention current)
S
 CURRENT AND CURRENT
DENSITY
• Current density can
be related to the
velocity of volume
charge density at a
given point. Consider
the element of
charge ΔQ = ρvΔv =
ρvΔSΔL, as shown in
the figure .
 CURRENT AND CURRENT
DENSITY
• Assume that the
charge element is
oriented within the
edges and parallel to
the coordinate axes,
and it shall only
posses an x
component of
velocity.
 CURRENT AND CURRENT
DENSITY
• With respect to the
time interval Δt, the
element of charge
has moved a
distance Δx, as
shown in the figure.
 CURRENT AND CURRENT
DENSITY
• Therefore a charge
ΔQ = ρvΔSΔx has
moved through a
reference plane
perpendicular to the
direction of motion in
a time increment Δt,
and the resultant
current is
Q x
I    S
t t
 CURRENT AND CURRENT
DENSITY
• And taking the limit with respect to time,

I   Sx
where: vx represents the x component of
the velocity, v.
• And in terms of current density,
J x   vx
 CURRENT AND CURRENT
DENSITY

and in general

J   v
where: J or ρvv is the convention current
density
 Sample Problem 1
The vector current density is given as J =
(4/r2)cos θ ar + 20 e-2r sin θ aθ – r sin θ cos
ǿ aǿ A/m2. (a) Find J at r = 3, θ = 0, ǿ = π.
(b) Find the total current passing through
the spherical cap r = 3, 0 < θ < 20O, 0 < ǿ
< 2π, in the ar direction.
 CONTINUITY OF CURRENT
• The principle of conservation of charge
states simply that charges can be neither
created nor destroyed, although equal
amounts of positive and negative charge
may be simultaneously created, obtained
by separation, destroyed, or lost by
recombination.
• The continuity equation, follow this
principle when considering of any region
bounded by a closed surface. And the
current through the closed surface is
CONTINUITY OF CURRENT

I   J  dS
S

the outward flow of positive charge must

be balanced by a decrease of positive
charge (or perhaps an increase of
negative charge) within the closed surface.
 CONTINUITY OF CURRENT
• The current at closed surface, however, is
an outward-flowing current and it is the
integral form of the continuity equation,
and the differential, or point, form is
obtained by using the divergence theorem
to change the surface integral into a
volume integral:

S
J  dS   ( 
vol
J ) d
 CONTINUITY OF CURRENT
• Next represent the enclosed charge Qi by
the volume integral of the charge density,
d
vol (  J ) d   
dt vol
 d
 CONTINUITY OF CURRENT
• Keeping the surface constant, the
derivative becomes a partial derivative and
may appear within the integral,

vol (  J ) d  vol t
 d
• For an incremental volume,

(  J )   d
t
 CONTINUITY OF CURRENT
• And the point from the continuity equation,

(  J )   (the current, or charge
t per second, diverging
from a small volume per
unit volume is equal to
the time rate of
decrease of charge per
unit volume at every
point)
 Sample Problem 2
• Assume that an electron beam carries a
total current of – 500 μA in the az
direction, and has a current density Jz that
is not a function of ρ or ǿ in the region 0 <
ρ < 10-4 m and is zero for ρ < 10-4 m. If the
electron velocities are given by vz = 8 x
107 z m/s, calculate ρv at ρ = 0 and z =:(a)
1 mm; (b) 2 cm: (c) 1 m.
 Seatwork
1. Given the vector current density J =
10ρ2zaρ - 4ρcos2ΦaΦ A/m2: (a) find the
current density at P(ρ = 3, Φ = 30O, z = 2);
(b) determine the total current flowing
outward through the circular band ρ = 3, 0
< Φ < 2π, 2 < z < 2.8.

Answer 180aρ – 9aΦ A/m2; 518 A

 Seatwork
2. Current density is given in cylindrical
coordinates as J = - 106z1.5az A/m2 in the region
0 ≤ ρ ≤ 20μm; for ρ ≥ 20 μm, J = 0. (a) Find the
total current crossing the surface z = 0.1m in the
az direction. (b) If the charge velocity is 2 x 106
m/s at z = 0.1 m, find ρv there. (c) If the volume
charge density at z = 0.15 m is -2000 C/m3, find
the charge velocity there.

Answer -39.7 mA; - 15.81 kC/m3; -2900 m/s

 METALLIC CONDUCTOR
• Metallic Conductor
permit a higher-energy
level in the valence
band to merges
smoothly, to a
conduction band by the
help of kinetic energy
produce by an external
field that will result in an
electron flow.
 METALLIC CONDUCTOR
• The valence electrons,
or conduction, or free,
electrons, having a
charge Q = -e will move
under the influence of
an electric field, E, and
will experience a force:

F = - eE
 METALLIC CONDUCTOR
• And the valence electron velocity (drift
velocity) is linearly related to the electric
field intensity by the mobility of the
electron in a given materials (i.e. free
space or crystalline)

vd = - μeE (electron velocity is opposite in

direction to E)
where μє is the mobility of an electron
(positive)
 METALLIC CONDUCTOR
• In terms of current density, J:

J  e e E
where:
  ee

Therefore;
J  E
 METALLIC CONDUCTOR

• Consider a uniform current density J and

electric field intensity E in a cylindrical
region of length L and cross-sectional area
S.
 METALLIC CONDUCTOR
L
I   J  dS  JS Therefore; V  I
S
S
a a
Va b    E  dL   E   dL   E  Lb a
b b

Vab  E  Lba or
V  IR
or
V  EL
but where: L
I V R
J   E   S
S L
 METALLIC CONDUCTOR
• Insulator did not
permit any electron
flow due to an existing
gap between the
valence band and the
conduction band. In
this case the electron
cannot accept any
additional amounts of
energy.
 METALLIC CONDUCTOR
• Semiconductors had a
small “forbidden
region” that separates
the valence band and
the conduction band.
A small amounts of
energy in the form of
heat, light, or an
electric field may raise
the energy of the
electrons and provide
a conduction.
 Sample Problem 3
Find the magnitude of the electric field
intensity in a sample of silver having σ =
6.17 x 107 mho/m and μe = 0.0056 m2/V.s
if: (a) the drift velocity is 1 mm/s; (b) the
current density is 107 A/m2; (c) the sample
is a cube, 3 mm on a side, carrying a total
current of 80 A; (d) the sample is a cube, 3
mm on a side, having a potential
difference of 0.5 mV between opposite
faces.
 Sample Problem 4
An aluminum conductor is 1000 ft long and
has a circular cross section with a
diameter of 0.8 in. If there is a dc voltage
of 1.2 V between the ends, find: (a) the
current density; (b) the current; (c) the
power dissipated, using your vast
knowledge of circuit theory.
Conductivity of Metallic Conductor
 Seatwork
1. Find the magnitude of the current density in a
sample of silver for which σ = 6.17 x 107 S/m
and μe = 0.0056 m2/V∙s if: (a) the drift velocity is
1.5 μm/s; (b) the electric field intensity is 1
mV/m; (c) the sample is a cube 2.5 mm on a
side having a voltage of 0.4 mV between
opposite faces; (d) the sample is a cube 2.5 mm
on a side carrying a total current of 0.5A.
Answer: 16.53 kA/m2; 61.7 kA/m2; 9.87MA/m2;
80.0 kA/m2
 Seatwork
2. A copper conductor has a diameter of 0.6 in and
it is 1200 ft long. Assume that it carries a total dc
current of 50 A. (a) Find the total resistance of
the conductor. (b) What current density exists in
it? (c) What is the dc voltage between the
conductor ends? (d) How much power is
dissipated in the wire?
Answer: 0.0346Ω; 2.74 x 105 A/m2; 1.729 V; 86.4
W
CONDUCTOR PROPERTIES AND
BOUNDARY CONDITIONS
Conductor Characteristics:
1. It has a surface charge density that
resides on the exterior surface and within
has zero charge density.
2. In static conditions, in which no current
will flow, follows directly Ohm’s law: the
electric field intensity within the conductor
is zero.
CONDUCTOR PROPERTIES AND
BOUNDARY CONDITIONS
The principles applied to conductors in
electrostatic fields:
1. The static electric field intensity inside a
conductor is zero.
2. The static electric field intensity at the
surface of a conductor is everywhere
directed normal to the surface.
3. The conductor surface is an equipotential
surface.
 CONDUCTOR PROPERTIES AND
BOUNDARY CONDITIONS

Prove:
Consider a closed surface conductor in a
free space boundary


( In static conditions, tangential
E  dL  0 electric field intensity and electric
flux density are zero.)
CONDUCTOR PROPERTIES AND
BOUNDARY CONDITIONS
• For the tangential field around the small
closed path at the surface:
b c d a

a
 
b c

d
0
and E = 0,
1 1
Et w  EN , atb h  EN , ata h  0
2 2
where: a to b = c to d = Δw and b to c = d
to a = Δh
CONDUCTOR PROPERTIES AND
BOUNDARY CONDITIONS
Et w  0 ( Δh = 0 and Δw ≈ 0(finite))
Et  0
Dt  Et  0
CONDUCTOR PROPERTIES AND
BOUNDARY CONDITIONS
• Consider the normal field in a small
cylinder as the Gaussian surface;

D  dS  Q (Using Gauss Law)
S


top

bottom

sides
 Q(Cylinder Sides)

DN S  Q  S S where: bottom and

sides integral were equal to zero
CONDUCTOR PROPERTIES AND
BOUNDARY CONDITIONS
or DN  S

DN  0 EN  S
 SAMPLE PROBLEM 5
A potential field is given as V = 100e-5x sin
3y cos 4z V. Let point P(0.1,π/12,π/24) be
located at a conductor-free space
boundary. At point P, find the magnitude
of: (a) V; (b) E; (c) EN; (d) Et; (e) ρS
 Methods of Images
• Dipole Characteristics –
infinite plane at zero
potential that exists
midway between the two
charges.
• Consider a vanishingly
thin conducting plane
that is infinite in extent
and have an
equipotential surface at a
potential V = 0, and
electric field intensity
normal to the surface.
 Methods of Images
• This can be represented
by a single charge
(image) above the plane
and maintain the same
fields, removing the
plane and locating a
negative charge at a
symmetrical location
below the plane.
 SAMPLE PROBLEM 6
A point charge of 25 nC is located in free
space at P(2,-3,5), and a perfectly
conducting plane is at z = 0. Find: (a) V at
(3,2,4); (b) E at (3,2,4); (c) ρS at (3,2,0).
 Solution to Problem 6
Given:
z=0
V = 0 at z = 0 at (3,2,4)
R = (3,2,4) – (2,-3,5) = (1,5,-1)
R’ = (3,2,4) – (2,-3,-5) = (1,5,9)
(a)

(b)
 Solution to Problem 6
(b)

(c)
 SEMICONDUCTORS
• Intrinsic Semiconductor – pure material
(i.e. germanium or silicon)

• Two types of current carriers:

1. Electrons – are those from the top of the

filled valence band which have received
sufficient energy (usually thermal) to cross
the relatively small forbidden (1 electron
volt energy gap) band into the conduction
band.
 SEMICONDUCTORS
2. Holes – are vacancies left by the
electrons represent unfilled energy states
in the valence band which may also move
from atom to atom in the crystal.

• Both carriers move in an electric field, and

they move in opposite directions; hence
each contributes a component of the total
current which is in the same direction as
that provided by the other.
 SEMICONDUCTORS
• The conductivity is a function of both hole
and electron concentrations and mobilities,

  ee  hh
where:
σ = conductivity
ρe and ρh = electron and hole charge
densities
μe and μh = mobility of electrons and
holes
 SEMICONDUCTORS
or
σ = σe + σh
where: σe = Neeμe
σh = Nheμh
Ne and Nh = electron and holes
concentrations
Electron charge, e = 1.602 x 10-19 C
μe = mobility of electron (0.12, silicon;
0.36, germanium)
μh = mobility of holes (0.025, silicon; 0.17,
germanium )
 SEMICONDUCTORS
• Doping – the process of adding impurities
to a pure semiconductor.

• Acceptors – furnish extra holes and form

p-type materials.

• Donor – provide additional electrons and

form n-type materials.
 SAMPLE PROBLEM 7
Using the values given in this section for
the electron and hole mobilities in
germanium at 300 K, and assuming hole
and electron concentrations of 2.7 x 1019
m-3, find: (a) the component of the
conductivity due to holes; (b) the
component of the conductivity due to
electrons; (c) the conductivity.
 Solution to Problem 7
σ1 = Neeμh
= (2.7 x 1019)( 1.602 x 10-19)(0.17)
= 0.735 mho/m
σ2 = Neeμe
= (2.7 x 1019)( 1.602 x 10-19)(0.36)
= 1.557 mho/m
σ = σ1 + σ2 = 0.735 + 1.557 = 2.29 mho/m
 NATURE OF DIELECTRIC
MATERIALS
• The characteristic which all dielectric
materials have in common, whether they
are solid, liquid, or gas, and whether or not
they are crystalline in nature, is their ability
to store electric energy.

• This storage takes place by means of a

shift in the relative positions of the internal,
bound positive and negative charges
against the normal molecular and atomic
forces.
 NATURE OF DIELECTRIC
MATERIALS
• A non-polar molecule does not have this
dipole arrangement until after a field is
applied. The negative and positive
charges shift in opposite directions against
their mutual attraction and produce a
dipole which is aligned with the electric
field.
NATURE OF DIELECTRIC
MATERIALS

p  Qd
n
ptotal   pi
i 1

n
1
P  lim
  0 

i 1
pi
 NATURE OF DIELECTRIC
MATERIALS
• Consider a dielectric
containing non-polar
molecules, no dipole
moment and P =0. In
the interior, an
incremental surface
element , ΔS and an
electric field, E,
produces a moment p
= Qd in each
molecule, such that p
and d make an angle
θ with ΔS.
 NATURE OF DIELECTRIC
MATERIALS
• Net total charge that crosses the
elemental surface in an upward direction,
Qb  nQd S
where: Qb = bound charge
• Bound charge polarization,
Qb  P  S
• Bound charge within the close surface,
Qb   P  dS
S
 NATURE OF DIELECTRIC
MATERIALS
• Total enclosed charge, QT    E  dS
S
0

where: QT  Qb  Q
Q = total free charge enclosed by the
surface S.
• Enclosed free charge,
Q  QT  Qb   ( 0 E  P)  dS
S

D   0 EN  P
 NATURE OF DIELECTRIC
MATERIALS
• For Polarizable Material
Q   D  dS
S
where Q = free charge enclosed
• In terms of volume charge
densities
v 
Qb  b dv

• Equivalent Divergence v 
Q  v dv
relationships,
  P   b QT    dv
  D  v v
T

   0 E  T
 NATURE OF DIELECTRIC
MATERIALS
• In ferroelectric materials the relationship
between P and E is not only nonlinear, but
also shows hysteresis effects.
• The linear relationship between P and E is
P  e0 E
where: χe (chi) = a dimensionless quantity
(electric susceptibility or dielectric
constant)
 NATURE OF DIELECTRIC
MATERIALS
• Substituting to the value of D:
D  0 E  e0 E  (e  1)0 E
• where:
 R  e  1
• Therefore
  0 R where: є =
permittivity
 SAMPLE PROBLEM 8
A certain homogenous slab of lossless
dielectric material is characterized by an
electric susceptibility of 0.12 and carries a
uniform electric flux density within it of 1.6
nC/m2. Find: (a) E; (b) P;(c) the average
dipole moment if there are 2 x 1019 dipoles
per cubic meter; (d) the voltage between
two equipotentials 1 in. apart.
 Solution to Problem 8
Given:
Xe = electric susceptibility = 0.12
D = electric flux density = 1.6 nC/m2
dipoles/cu.m = 2 x 1019
a) D = є0E + Xe є0E = є0E(Xe + 1)
E = D/ [є0(Xe + 1)] = (1.6 x 10-9)/[(8.854 x 10-12)(0.12 +1)]
= 161.35 V/m
b) P = Xe є0E = (0.12)(8.854 x 10-12)(161.35)
= 171.4 x 10-12 C/m2 or 171.4 pC/m2
c) Average dipole moment = (171.4 x 10-12)/(2 x 1019)
= 8.57 x 10-30 C-m
d) V = E·ΔS = (161.35)(0.0254) = 4.09829 V or 4.10 V
 BOUNDARY CONDITIONS FOR
PERFECT DIELECTRIC MATERIALS
• Boundary conditions existing at the
interface between a conductor and a
dielectric:
1. D and E are both zero inside the
conductor.
Dt  Et  0
2. The tangential E and D field
components must both be zero.
 BOUNDARY CONDITIONS FOR
PERFECT DIELECTRIC MATERIALS
3. The normal electric flux density is equal
to the surface charge density on the
conductor.
DN  EN  S
 BOUNDARY CONDITIONS FOR
PERFECT DIELECTRIC MATERIALS
 BOUNDARY CONDITIONS FOR
PERFECT DIELECTRIC MATERIALS
• Consider the interface between two
dielectrics having permitivities є1 and є2
and occupying regions 1 and 2 and the
tangential components are given by,

 E  dL  0
S

Etan 1w  Etan 2w  0 (around the close

path)
Etan 1  Etan 2 (Δh = negligible)
 BOUNDARY CONDITIONS FOR
PERFECT DIELECTRIC MATERIALS
• If the tangential electric field intensity is
continuous across the boundary, then the
tangential D is discontinuous, for
Dtan 1 Dtan 2
 Etan 1  Etan 2 
1 2
or
Dtan 1 1

Dtan 2  2
 BOUNDARY CONDITIONS FOR
PERFECT DIELECTRIC MATERIALS
• Applying the Gauss’s law,

 D  dS  Q
S

DN1S  DN 2S  Q  S S
DN1  DN 2  S
 BOUNDARY CONDITIONS FOR
PERFECT DIELECTRIC MATERIALS

DN1  DN 2  S

DN1  DN 2 (ρS = 0, the normal

component of D is
or continuous)

1EN1   2 EN 2 (normal E is discontinuous)

 SAMPLE PROBLEM 9
The region y < 0 contains a dielectric
material for which єR1 = 2.5, while the
region y > 0 is characterized by єR2 = 4.
Let E1 = -30ax + 50ay + 70az V/m, and
find: (a) EN1; (b) Et1; (c)Et1; (d) E1; (e) θ1
 Solution to Problem 9
Given:
єR1 = 2.5
єR2 = 4
E1 = -30ax + 50ay + 70az V/m; y = normal
a) EN1 = E1·ay = (-30ax + 50ay + 70az) ·ay = 0 +
50 + 0 = 50 V/m
b) Et1 = E1 – EN1 = -30ax + 50ay + 70az - 50ay = -
30ax + 70az V/m
c) Et1 = |Et1| =
 Solution to Problem 9
d) E1 = |E1| =

e)

θ1 = cos-1 (E1·ay)/|E1| = 56.71O

 SAMPLE PROBLEM 10
Continue problem 9 by finding: (a) DN2; (b)
Dt2; (c) D2; (d) P2; (e) θ2
 Solution to Problem 10
E1 = -30ax + 50ay + 70az
E2 = -30ax + Ey2ay + 70az
D1 = є0єR1E1
= (8.854 x 10-12)(2.5)(-30ax + 50ay + 70az) = - 0.664 x 10-
9a + 1.107 x 10-9a + 1.55 x 10-9a
x y z
D2 = Dx2ax + 1.107 x 10-9ay + Dz2az
D2 = є0єR2E2
Dx2ax + 1.107 x 10-9ay + Dz2az = (8.854 x 10-12)(4)( -30ax +
Ey2ay + 70az)
Dx2 = -1.062 x 10-9
Ey2 = 31.26
Dz2 = 2.48 x 10-9
D2 = -1.062 x 10-9ax + 1.107 x 10-9ay + 2.48 x 10-9az
D2 = -1.062ax + 1.107ay + 2.48az nC/m2
 Solution to Problem 10
a) DN2 = D2·ay = (-1.062ax + 1.107ay + 2.48az) ·ay = 0 +
1.107 + 0 = 1.107 nC/m2
b) Dt2 = Et2є0єR2 = (76.2)(8.854 x 10-12)(4) = 2.70 x 10-9
C/m2 = 270 nC/m2
c) D2 = -1.062ax + 1.107ay + 2.48az nC/m2
d)

P2 = -0.797ax + 0.830ay + 1.86az μC/m2

e)
;
 CAPACITANCE
Capacitance – the ratio of the magnitudes
of the total charge on either conductor to
the potential difference between
conductors. And it is measured in farads
(F), where a farad = 1 Coulomb/Volt
Q
C
V0
where: Q = surface integral over the
positive conductor.
CAPACITANCE
 CAPACITANCE
• Consider two conductors embedded in a
homogenous dielectric. Conductor M2
carries a total positive charge Q, and M1
carries an equal negative charge. There
are no other charges present, and the total
charge of the system is zero.
 CAPACITANCE
• Let Vo, the potential difference between
M2 and M1, and carrying a unit charge
from the negative to the positive surface,
and the capacitance is given by,

C
S
E  dS

  E  dL

CAPACITANCE
 CAPACITANCE
• Consider a simple two-conductor system
in which the conductors are identical,
infinite parallel planes with separation d.
Choosing the lower conducting plane at z
= 0 and the upper one at z = d, a uniform
sheet of surface charge ±ρS on each
conductor leads to the uniform field.
 CAPACITANCE
S
E az (є = permittivity of the
 homogenous dielectric)
D  S az
DN  DZ  S (charge on the lower plane)
DN  DZ (charge on the upper plane)
Potential difference between the lower and
upper plane,
lower 0 S S
V0   E  dL   dz  d
upper d  
 CAPACITANCE
And the charge value,
Q  S S where:
Therefore, ρS = surface charge
Q S density
C 
V0 d S = surface area
The total energy stored in the capacitor,
S d  S   
2 2 2 2
1 1 1 1 S d
WE   E 2 dv    dzdS  Sd 
S S

2 vol 2 0 0  2
2  2 d 2
or
2
1 1 1 Q
WE  CV 02  QV0 
2 2 2 C
 SAMPLE PROBLEM 11
Find the relative permittivity of the
dielectric material used in a parallel plate
capacitor if : (a) C = 40 nF, d = 0.1 mm,
and S = 0.15 m2, (b) d = 0.2 mm, E = 500
kV/m, and ρS = 10 μC/m2; (c) D = 50
μC/m2 and the energy density is 20 J/m3.
 Solution to Problem 11
(a)

(b)
 Solution to Problem 11
(c)

Given:
D = 50 x 10-6 C/m2
W = 20 J/m3
 SEVERAL CAPACITANCE
• Consider a Coaxial cable or coaxial
capacitor that has inner radius a, outer
radius b, and length L. The value of the
capacitance is given by,

2 L
C
ln( b / a)
 SEVERAL CAPACITANCE
• Consider a spherical capacitor formed of
two concentric spherical conducting shells
of radius a and b, b > a. The expression
for the electric field,
(є = dielectric
Q
Er  permittivity
4r 2
between the region
of the
spheres)
 SEVERAL CAPACITANCE
• Potential difference using the line integral,

Q  1 1  (Q =represents the
Vab     total charge o the
4  a b  inner sphere)
 SEVERAL CAPACITANCE
• The Capacitance is given by,
Q 4
C 
Va b 1  1
a b
or

C  4a (allowing the outer

sphere to become
infinitely large, b = ∞.)
 SEVERAL CAPACITANCE
• Coating the sphere with a different
dielectric layer, for which є = є1, extending
from r = a to r = r1, Q
Dr 
4r 2

Q
Er  (a  r  r1 )
4 1r 2

Q
Er  (r  r1 )
4 0 r 2
 SEVERAL CAPACITANCE
• The potential difference is,
a Qdr r1 Qdr
Va  V    
r1 4 r 2  4 r 2
1 0

Q 1 1 1 1 
Va  V       
4  1  a r1   0 r1 
 SEVERAL CAPACITANCE
• Therefore,

4
C
1 1 1 1
   
1  a r1   0r1
 SEVERAL CAPACITANCE
• Consider a parallel-plate capacitor of area
S and spacing d, where d is small
compared to the linear dimensions of the
plate. The capacitance is given by є1S/d,
using a dielectric permittivity є1. Suppose
another part of the capacitor dielectric has
a permittivity of є2, then the potential
difference given by Vo is,
 SEVERAL CAPACITANCE
V0  E1d1  E2d2 (E1 and E2 are
both uniform)

DN1  DN 2 (E is normal)
or
1E1   2 E2
 SEVERAL CAPACITANCE
• Eliminating E2; E1 
V 0
d1  d 2 1 /  2 
• The surface charge density, V0
S  D1  1E1 
1
d1 d2

1 2
• Since D1 = D2, the capacitance is given by,
Q S S 1 1
C   
V0 V0 1 d1  d2 1

1
1S  2 S C1 C2
 SAMPLE PROBLEM 12
Find the capacitance of: (a) 20 cm of
58C/U coaxial cable having an inner
conductor 0.0295 in. in diameter, an outer
conductor having an inside diameter of
0.116 in., and a polyethylene dielectric; (b)
a conducting sphere 1 cm in diameter,
covered with a layer of polyethelene 1 cm
thick, in free space; (c) a conducting
sphere 1 cm in diameter, covered with a
layer of polyethelene 1 cm thick, and
surrounded by a concentric conducting
sphere 1.5 cm in radius.
 Solution to Problem 12
a)

b)

c)
 Solution to Problem 12
b)
 SAMPLE PROBLEM 13
A parallel-plate capacitor contains three
dielectric layers, Let єR1 = 1, d1 = 0.2 mm,
єR2 = 2, d2 = 0.3 mm, єR3 = 3, d3 = 0.4 mm,
and S = 20 cm2. (a) Find C. (b) Find the
percentage of the total stored energy
located in each of the three regions.
 Solution to Problem 13
a)

b)
CAPACITANCE OF A TWO-WIRE
LINE
CAPACITANCE OF A TWO-WIRE
LINE
• Consider the potential field of two infinite
line charges. A positive line charge in the
xz plane at x = a and a negative line
charge at x = -a. The potential of a single
line charge with zero reference at a radius
of Ro is,
 L R0
V ln
2 R
 CAPACITANCE OF A TWO-WIRE
LINE
• Combining the potential field,
 L  R10 R20   L R10R2
V  ln  ln   ln
2  R1 R2  2 R20R1
• Letting R10 = R20 (placing zero reference at
equal distance from each line) and R1 = x
and R2 =y,

V
L
ln
 x  a  y
2 2

 L x  a   y
ln
2 2

2 x  a   y
2 2
4 x  a   y
2 2
CAPACITANCE OF A TWO-WIRE
LINE
• Choosing an equipotential surface V = V1
and letting K1 = dimensionless parameter
of potential V1
4V1 /  L
K1  e
CAPACITANCE OF A TWO-WIRE
LINE
Therefore,
K1 
 x  a  y
2 2

x  a   y
2 2

K1  1
x  2ax
2
 y a 0
2 2

K1  1
2
 2a K1 
2
 K1  1 
 x  a   y  
2 
  
 K1 1   K1  1 
CAPACITANCE OF A TWO-WIRE
LINE
• In equipotential surface where V = V1, the
surface is independent value of z ( a
cylinder) and intersects the xy plane in a
circle of radius b, 2a K
b 1

• Centered at x = h, y = 0; K1  1
K1  1
ha
K1  1
• where: a  h 2  b 2
h h b
2 2 ( x = 0)
K1 
b
CAPACITANCE OF A TWO-WIRE
LINE
2V0 /  L
• But K1  e
4 V0
• Therefore,  L 
ln K1

• The value of the capacitance is given by,

L L 4L 2L
C  
• or V0 ln K1 ln K1
2L 2L
C
 2 2

 1
ln h  h  b / b cosh (h / b)
 SAMPLE PROBLEM 14
Find the capacitance between a circular
conducting cylinder in air, 2 mm in radius,
and: (a) a conducting plane, 1 cm distant
from the cylinder axis; (b) a conducting
plane, 1 cm distant from the cylinder axis;
(c) a similar cylinder, axes separated by 1
cm.
L=1
Є = Є0 = 8.854 x 10-12
r = b = 2mm = 2 x 10-3 m Solution to Problem 14
d = h = 0.01 m

a)

b)

c)
Solution to Problem 14

0.024 = 1cm + 1cm + 2mm + 2mm