Diode & Its

Approximations
 Diode

A diode is a two-terminal device that conducts

primarily in one direction.

 Anode (Positive Terminal)

 Cathode (Negative terminal)

Diode
 Biased P – N Junction
• In forward bias the depletion region shrinks slightly in width.
With this shrinking the energy required for charge carriers to
cross the depletion region decreases exponentially. Therefore,
as the applied voltage increases, current starts to flow across
the junction.
Forward Bias:
Vapplied > 0
Under reverse bias the depletion region widens. This causes the
electric field produced by the ions to cancel out the applied
reverse bias voltage. A small leakage current, Is (saturation
current) flows under reverse bias conditions.
Reverse Bias
Vapplied < 0
Diode Voltages

To forward bias a
diode, the anode must
be more positive than
the cathode or LESS
NEGATIVE.

To reverse bias a
diode, the anode must
be less positive than
the cathode or MORE
NEGATIVE.

A conducting diode has about 0.7 volts across if silicon, 0.3 volts if germanium.
A Diode Puzzle

Which lamps are alight? Some may not be full brightness.

+ +
- -
A Diode Puzzle

Which lamps are alight? Some may not be full brightness.

+ +
- -
Exercise - a Diode Puzzle

Which lamps are alight? Some may not be full brightness.

+ +
- -
Exercise - a Diode Puzzle

Which lamps are alight? Some may not be full brightness.

+ +
- -
 Diode Approximations
For Calculation in Circuit, Three Approximations are used

accordingly.

 1st Approximation (Ideal )

2nd Approximation

3rd Approximation
 First Approximation
For the 1st-approx. assume the diode drop voltage is zero (Perfect
closed switch)
 Second Approximation
For the 2nd-approx. assume the diode drop voltage of 0.7 or 0.3 volts
This model is more accurate than the simple ideal diode model
because it includes the approximate barrier potential voltage.
Remember the barrier potential voltage is the voltage at which
appreciable current starts to flow.
 Example of 2nd Approximation

+
V

Example: To be more accurate than just using the ideal diode model include
the barrier potential. Assume V = 0.3 volts (typical for a germanium diode)
Determine the value of ID if VA = 5 volts (forward bias).

RS = 50 
With VA > 0 the diode is in forward bias and
is acting like a perfect conductor so write a
ID KVL equation to find ID:
+
VA 0 = VA – IDRS - V
_ + ID = VA - V = 4.7 V = 94 mA
V
RS 50 
 Third Approximation
For the 3rd –approx. assume the diode drop voltage of 0.7 volt and
consider the forward bulk resistance of the diode:
• Vd = 0.7 V + Id x Rb
• Ignore bulk resistance of the diode if Rb < 0.01
 Example of 3rd Approximation

Example: Assume the diode is a low-power diode with a forward

resistance value of 5 ohms. The barrier potential voltage is still: V
= 0.3 volts (typical for a germanium diode) Determine the value of
ID if VA = 5 volts.

RS = 50 

Once again, write a KVL equation for the

ID
circuit:
+ 0 = VA – IDRS - V - IDRF
VA ID = VA - V = 5 – 0.3 = 85.5 mA
_ +
V RS + RF 50 + 5

RF
 Forward Bulk Resistance
Calculate the Bulk Resistance (Rb) from the formula given below:

Rb = (V2 – V1)/(I2 – I1)

Forward bulk resistance (Rb) is very small less than 1 Ohms or

10
Ohms. The bulk resistance is the dynamic resistance while
current
pass through the diode, but static
resistance that usually measured by meter is relatively small
compare to the bulk resistance.

The reverse resistance of the diode is very large greater than

1 M-ohms.