BUZ 350

SIPMOS ® Power Transistor

• N channel
• Enhancement mode
• Avalanche-rated

Pin 1 Pin 2 Pin 3

G D S

Type VDS ID RDS(on) Package Ordering Code

BUZ 350 200 V 22 A 0.12 Ω TO-218 AA C67078-S3117-A2
Maximum Ratings
Parameter Symbol Values Unit

Continuous drain current ID A

TC = 33 ˚C 22
Pulsed drain current IDpuls
TC = 25 ˚C 88
Avalanche current,limited by Tjmax IAR 22
Avalanche energy,periodic limited by Tjmax EAR 12 mJ
Avalanche energy, single pulse EAS
ID = 22 A, VDD = 50 V, RGS = 25 Ω
L = 1.39 mH, Tj = 25 ˚C 450
Gate source voltage VGS ± 20 V
Power dissipation Ptot W
TC = 25 ˚C 125
Operating temperature Tj -55 ... + 150 ˚C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC ≤1 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Data Sheet 1 05.99

 BUZ 350

Electrical Characteristics, at Tj = 25˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics
Drain- source breakdown voltage V (BR)DSS V
VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C 200 - -
Gate threshold voltage V GS(th)
VGS=VDS, ID = 1 mA 2.1 3 4
Zero gate voltage drain current IDSS µA
VDS = 200 V, V GS = 0 V, Tj = 25 ˚C - 0.1 1
VDS = 200 V, V GS = 0 V, Tj = 125 ˚C - 10 100
Gate-source leakage current IGSS nA
VGS = 20 V, VDS = 0 V - 10 100
Drain-Source on-resistance RDS(on) Ω
VGS = 10 V, ID = 14 A - 0.09 0.12

Data Sheet 2 05.99

 BUZ 350

Electrical Characteristics, at Tj = 25˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics
Transconductance gfs S
VDS≥ 2 * ID * RDS(on)max, ID = 14 A 9 15 -
Input capacitance Ciss pF
VGS = 0 V, V DS = 25 V, f = 1 MHz - 1400 1900
Output capacitance Coss
VGS = 0 V, V DS = 25 V, f = 1 MHz - 280 400
Reverse transfer capacitance Crss
VGS = 0 V, V DS = 25 V, f = 1 MHz - 130 200
Turn-on delay time td(on) ns
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 30 45
Rise time tr
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 70 110
Turn-off delay time td(off)
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 250 320
Fall time tf
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 90 120

Data Sheet 3 05.99

 BUZ 350

Electrical Characteristics, at Tj = 25˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode

Inverse diode continuous forward current IS A

TC = 25 ˚C - - 22
Inverse diode direct current,pulsed ISM
TC = 25 ˚C - - 88
Inverse diode forward voltage V SD V
VGS = 0 V, IF = 44 A - 1.2 1.7
Reverse recovery time trr ns
VR = 100 V, IF=lS, diF/dt = 100 A/µs - 180 -
Reverse recovery charge Qrr µC
VR = 100 V, IF=lS, diF/dt = 100 A/µs - 1.2 -

Data Sheet 4 05.99

 BUZ 350

Power dissipation Drain current

Ptot = ƒ(TC) ID = ƒ(TC)
parameter: VGS ≥ 10 V

130 24

W A

110 20
Ptot ID
100 18
90 16
80
14
70
12
60
10
50
8
40
6
30
4
20
2
10
0 0
0 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 120 ˚C 160
TC TC

Safe operating area Transient thermal impedance

ID = ƒ(VDS) Zth JC = ƒ(tp)
parameter: D = 0.01, TC = 25˚C parameter: D = tp / T

10 3 10 1

K/W
A
10 0
ID t = 17.0µs ZthJC
10 2 p

/ID 10 -1
V DS 100 µs
=
n)
(o
R DS
10 1 1 ms 10 -2
D = 0.50
0.20
10 ms
10 -3 0.10
0.05
10 0
0.02
DC single pulse
10 -4 0.01

10 -1 10 -5
0 1 2 -7 -6 -5 -4 -3 -2 -1 0
10 10 10 V 10 10 10 10 10 10 10 s 10
VDS tp

Data Sheet 5 05.99

 BUZ 350

Typ. output characteristics Typ. drain-source on-resistance

ID = ƒ(VDS) RDS (on) = ƒ(ID)
parameter: tp = 80 µs parameter: VGS

50 0.38
Ptot = 125W l
j
k i h g Ω a b c d e f
A
fV
GS [V] 0.32
ID 40 a 4.0 RDS (on)
b 4.5
0.28
35 e c 5.0
d 5.5
0.24
30 e 6.0
f 6.5
0.20
25 d g 7.0
h 7.5
i 8.0 0.16
20
g
c j 9.0
h
15 k 10.0 0.12 i
j
l 20.0 k
l
10 b 0.08

VGS [V] =
5 a 0.04 a b c d e f g h i j k l
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
0 0.00
0 2 4 6 8 V 12 0 5 10 15 20 25 30 35 40 A 50
VDS ID

Typ. transfer characteristics ID = f (V GS) Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 µs parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max V DS≥2 x ID x RDS(on)max

45 20

A S

ID gfs 16
35

14
30
12
25
10
20
8
15
6

10
4

5 2

0 0
0 1 2 3 4 5 6 7 8 V 10 0 5 10 15 20 25 30 A 40
VGS ID

Data Sheet 6 05.99

 BUZ 350

Drain-source on-resistance Gate threshold voltage

RDS (on) = ƒ(Tj ) VGS (th) = ƒ(Tj )
parameter: ID = 14 A, VGS = 10 V parameter: VGS = VDS, ID = 1 mA

0.38 4.6

Ω V 98%
4.0
0.32
RDS (on) VGS(th)
3.6
0.28
3.2 typ

0.24
2.8

0.20 2.4 2%
98% 2.0
0.16

typ 1.6
0.12
1.2
0.08
0.8

0.04 0.4

0.00 0.0
-60 -20 20 60 100 ˚C 160 -60 -20 20 60 100 ˚C 160
Tj Tj

Typ. capacitances Forward characteristics of reverse diode

C = f (VDS) IF = ƒ(VSD)
parameter:VGS = 0V, f = 1MHz parameter: Tj , tp = 80 µs

10 2 10 2

nF A
C IF

Ciss
10 1 10 1

Coss

10 0 Crss 10 0
Tj = 25 ˚C typ
Tj = 150 ˚C typ
Tj = 25 ˚C (98%)
Tj = 150 ˚C (98%)

10 -1 10 -1
0 5 10 15 20 25 30 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VDS VSD

Data Sheet 7 05.99

 BUZ 350

Avalanche energy EAS = ƒ(Tj) Typ. gate charge

parameter: ID = 22 A, VDD = 50 V VGS = ƒ(QGate)
RGS = 25 Ω, L = 1.39 mH parameter: ID puls = 33 A

500 16

mJ
V

EAS 400 VGS

12
350

10
300 0,2 VDS max 0,8 VDS max

250 8

200
6

150
4
100

2
50

0 0
20 40 60 80 100 120 ˚C 160 0 10 20 30 40 50 60 70 80 nC 100
Tj Q Gate

Drain-source breakdown voltage

V(BR)DSS = ƒ(Tj)

240

230
V(BR)DSS
225

220

215

210

205

200

195

190

185
180
-60 -20 20 60 100 ˚C 160
Tj

Data Sheet 8 05.99

This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.