Bipolar Junction Transistors PDF

Basic Electronic Devices and Circuits
EE 111
Electrical Engineering
Majmaah University
2nd Semester 1432/1433 H
Chapter 4
Bipolar Junction Transistors (BJTs)
© 2012 Pearson Education. Upper Saddle River, NJ, 07458.

Electronic Devices, 9th edition
Thomas L. Floyd All rights reserved. 1
Introduction
• The invention of the transistor was the beginning of a
technological revolution that is still continuing.
• All of the complex electronic devices and systems today are
an outgrowth of early developments in semiconductor
transistors.
• Two basic types of transistors are
the bipolar junction transistor (BJT),
and the field-effect transistor (FET).
• The BJT is used in two broad areas
• as a linear amplifier to boost or amplify an electrical
signal,
• as an electronic switch.
• The term bipolar refers to the use of both holes and electrons
as current carriers in the transistor structure.
BJT Structure
The BJT has three regions called the emitter, base, and
collector. Between the regions are junctions as indicated.
C (collector) C
The base is a thin
lightly doped region
compared to the n Base-Collector p
junction
heavily doped emitter B
(base)
p B n
Base-Emitter
and moderately doped n
junction
p
collector regions.
E (emitter) E
npn pnp

BJT Structure

C (collector) C
BJT Symbols
n Base-Collector p
junction
B p B n
(base) Base-Emitter
n p
junction
E (emitter) E
npn pnp

BJT Biasing
In normal operation, the base-emitter (BE) is forward-

biased and the base-collector (BC) is reverse-biased.
BC reverse-
biased
For the npn type shown, the +
Cn +
collector is more positive B p–
+ –
than the base, which is more + – En
positive than the emitter. BE forward-
–
biased
npn

BJT Biasing
In normal operation, the base-emitter (BE) is forward-

biased and the base-collector (BC) is reverse-biased.
BC reverse-
biased
For the pnp type, the voltages
–
are reversed to maintain the Cp –
B n+
forward-reverse bias. –
+
– + Ep
BE forward-
+ biased
pnp

BJT Operation (npn)
Direction of
electron
flow:
IE = IC + IB © 2012 Pearson Education. Upper Saddle River, NJ, 07458.

BJT Operation (npn)
• The heavily doped n-type emitter region has a very high

density of conduction-band (free) electrons.
• These free electrons easily diffuse through the forward-
biased BE junction into the lightly doped and very thin p-type
base region (wide arrow).
• The lightly doped p-type base has a low density of holes,
which are the majority carriers (white circles).
• A small percentage of the total number of free electrons
injected into the base region recombine with holes and move
as valence electrons through the base region, and holes into
the emitter region as hole current (red arrows).

BJT Operation (npn)
• When the electrons that have recombined with holes as valence
electrons leave the crystalline structure of the base, they become free
electrons in the metallic base lead and produce the external base
current.
• Most of the free electrons that have entered the base do not
recombine with holes because the base is very thin (no enough holes).
• As the free electrons move toward the reverse-biased BC junction,
they are swept across into the collector region by the attraction of the
positive collector supply voltage.
• The free electrons move through the collector region, into the
external circuit, and then return into the emitter region along with the
base current (IE = IC + IB).
• The emitter current is slightly greater than the collector current
because of the small base current that splits off from the total current
injected into the base region from the emitter (IE = IC + IB).
BJT Currents
The direction of conventional current is in the direction of the arrow
on the emitter terminal.
The emitter current is the sum of the collector current and the small
base current. That is, IE = IC + IB.
+ –
+ –
IC IC
IC IC
n p
IB IB IB IB
+ p + – n –
n p
IE IE
IE IE
– +
– +
npn pnp
DC Bias Circuits

DC Beta (βDC) and DC Alpha (αDC)
The dc current gain of a transistor is the ratio of the dc collector current (IC)
to the dc base current (IB) and is designated dc beta (βDC).
Typical values of βDC range from less than 20 to 200 or higher.
The ratio of the dc collector current (IC) to the dc emitter current (IE) is the
dc alpha (αDC).
The alpha is a less-used parameter than beta in transistor circuits.
Typically, values of αDC range from 0.95 to 0.99 or greater, but αDC is
always less than 1.
The reason is that IC is always slightly less than IE by the amount of IB
(IE = IC + IB).
DC Beta (βDC) and DC Alpha (αDC)
Example:
If IE = 100 mA and IB = 1 mA,
then
IC = IE – IB = 100 – 1 = 99 mA
and
αDC = IC / IE = 99 / 100 = 0.99.

Transistor DC Model
Unsaturated BJT.
forward-biased diode

BJT Circuit Analysis
IB: dc base current

KCL: IE = IC + IB
IE: dc emitter current
IC: dc collector current
VBE: dc voltage at base

with respect to emitter
VCB: dc voltage at
collector with respect
to base
VCE: dc voltage at
collector with respect
KVL: VCE = VCB + VBE
to emitter
VBB forward-biases the BE junction, and VCC reverse-biases the BC junction.
When BE is forward-biased, it is like a forward-biased diode and has a
nominal forward voltage drop of ~0.7 V
>0

BJT Characteristics
The collector characteristic curves show the relationship

of the three transistor currents.
IC
Breakdown
The curve shown is for a fixed region
base current. The first region is C
Active region
the saturation region. As VCE is B
increased, IC increases until B.

Then it flattens in the region IC versus VCE curve
between points B and C, which Saturation for one value of IB
is the active region. region
After C, is the breakdown A

VCE
0 0.7 V VCE(max)
region.
BJT Characteristics
Consider point A on the characteristic curve:
• Assume that VBB is set to produce a certain value of IB and VCC is zero.
• For this condition, both the BE junction and the BC junction are forward-
biased,
because the base is at approximately 0.7 V while the emitter and the
collector are at 0 V.
• IB is through the BE junction,
because of the low impedance path to ground and, therefore, IC is zero.
•When both junctions are forward-biased, the transistor is in the saturation
region of its operation.
Consider the portion of the curve between points A and B:
• Saturation is the state of a BJT in which IC has reached a maximum and is
independent of IB (IC ≠ βDC IB). IB is constant, but IC is increasing.
• When VCC is increased, VCE increases as IC increases.
• IC increases as VCC is increased because VCE remains less than 0.7 V due
to the forward-biased BC junction.
VCE = VCB + VBE = negative + 0.7 < 0.7 and IC = (VCC – VCE) / RC
BJT Characteristics
Consider the portion of the curve between points B and C:
• Ideally, when VCE exceeds 0.7 V, the BC junction becomes reverse-biased
and the transistor goes into the active, or linear, region of its operation.
• Once the BC junction is reverse-biased, IC levels off and remains
essentially constant for a given value of IB as VCE continues to increase.
• Actually, IC increases very slightly as VCE increases due to widening of the
BC depletion region.
• This results in fewer holes for recombination in the base region which
effectively causes a slight increase in βDC.
•For this portion of the characteristic curve, the value of IC is determined
only by the relationship IC = βDC IB.
Consider the portion of the curve to the right of point C:
• When VCE reaches a sufficiently high voltage, the reverse-biased BC
junction goes into breakdown; and IC increases rapidly.
• A transistor should never be operated in this breakdown region.

BJT Characteristics
Family of IC versus VCE curves for
several values of IB (IB1< IB2< IB3, etc.)
By setting up other values of
IC
base current, a family of
IB6
collector curves is developed.
IB5
βDC is the ratio of collector IB4
current to base current. IB3
IC IB2
β DC =
IB IB1
Cutoff region IB = 0
It can be read from the curves. VCE
0
The value of βDC is nearly the
same wherever it is read.
BJT Characteristics
• A family of collector characteristic curves is produced when

IC versus VCE is plotted for several values of IB.
• When IB = 0, the transistor is in the cutoff region although

there is a very small collector leakage current.
• Cutoff is the non-conducting state of a transistor.
• The amount of collector leakage current for IB = 0 is

exaggerated on the graph for illustration.

BJT Characteristics
What is the βDC for the transistor shown?

I C (mA)
IB6 = 60 µA
10.0
Choose a base current near the IB5 = 50 µA
center of the range. In this case 8.0
IB4 = 40 µA
IB3 which is 30 µA.
6.0
I B3 = 30 µA
Read the corresponding
4.0 IB2 = 20 µA
collector current – in this case,
5.0 mA. Calculate the ratio: 2.0
IB1 = 10 µA
IB = 0
I 5.0 mA
β DC = C = = 167 0 VCE
I B 30 µ A

Cutoff
In a BJT, cutoff is the condition in which there is no base

current (IB = 0), which results in only an extremely small
leakage current (ICEO ≈ 0) in the collector circuit (due mainly
to thermally produced carriers).
For practical work, this current is assumed to be zero.
RC
In cutoff, neither the BE junction,
nor the BC junction are forward- RB +
ICEO
+
biased. IB = 0
VCE ≅ VCC
–
VCC
–
The subscript CEO represents

collector-to-emitter with the base
open.
Saturation
In a BJT, saturation is the condition in which there is

maximum IC.
The saturation current is determined by the external circuit
(VCC and RC in this case) because the CE voltage is minimum
(VCE ≈ 0.2 V). VCE = VCC – IC RC
RC
– +
In saturation, an increase of IB has IC
no effect on the collector circuit and RB + +
VCE = VCC – IC RC VCC
the relation IC = βDC IB is no longer + IB – –
VBB
valid. –

Saturation
• When the BE junction becomes forward-biased and IB is

increased, IC also increases (IC = βDC IB),
and VCE decreases as a result of more drop across RC,
VCE = VCC – IC RC
• When VCE reaches its saturation value, VCE(sat), the BC junction
becomes forward-biased and IC can increase no further, even with
a continued increase in IB.
• At the point of saturation, the relation IC = βDC IB is no longer
valid.
• VCE(sat) for a transistor occurs somewhere below the knee of the
collector curves, and it is usually only a few tenths of a volt.

DC Load Line
The DC load line represents the circuit that is external to

the transistor. It is drawn by I C
connecting the saturation Saturation

and cutoff points. I C(sat)
The transistor characteristic

curves are shown superimposed
on the load line.
The region between the
saturation and cutoff points is Cutoff
IB = 0
called the active region. 0 VCE(sat) VCC
VCE

DC Load Line
RC 3.3 kΩ
RB +
What is the saturation current for the VCC
βDC = 200 15 V
circuit? Assume VCE = 0.2 V in + 220 kΩ –
V BB
saturation. 3V –
VCC − 0.2 V 15 V − 0.2 V

ISAT = = = 4.48 mA
RC 3.3 kΩ
3.0 V − 0.7 V
Is the transistor saturated? I B = = 10.45 µ A
220 kΩ
IC = β IB = 200 (10.45 µA) = 2.09 mA
Since IC < ISAT, it is not saturated.
(repeated)

DC and AC Quantities
The text uses capital letters for both AC and DC currents (I) and voltages
(V), with rms values assumed unless stated otherwise.
DC Quantities use upper case roman subscripts. Example: VCE. The
second letter in the subscript indicates the reference point (–).
AC Quantities and time varying signals use lower case italic
subscripts. Example: Vce.
Internal transistor resistances are indicated as lower case
quantities with a prime and an appropriate subscript. Example: re’.
External resistances are indicated as capital R with either a
capital or lower case subscript depending on whether it is a DC or
ac resistance. Examples: RC and Rc.

BJT Amplifiers
A BJT amplifies AC signals by converting some of the DC power from
the power supplies to AC signal power.
An ac signal at the input is superimposed in the dc bias by capacitive
coupling.
The output ac signal is inverted and rides on a dc level of VCE.
RC
Vin
VBB
RB +
0 r e′ VCC
Vc Vc –
+
Vin VBB Vb
–
VCE

IC
BJT Switches IC(sat)

Saturation
A BJT can be used as a switching device

in logic circuits to turn on or off current to
a load. As a switch, the transistor is
normally in either cutoff (load is OFF) or IB = 0 Cutoff
saturation (load is ON). 0 VCE(sat) VCC

V CE
+VCC +VCC +VCC +VCC
RC IC = 0 RC RC IC(sat) RC IC(sat)
RB C RB C
+
0V +VBB
IB = 0 E IB E
–
In cutoff, the transistor In saturation, the transistor

looks like an open switch. looks like a closed switch.

A Sample of Common Transistor Packages
3 Collector
3 Collector
3 Collector
3
2
Base 1
2
1 1 Base
1 Emitter Base
2 2 2 Emitter
3 1 Emitter
3 2
1
TO-92 SOT-23 TO-18
E
C
B
C (case)
B
C
E
C
E B
TO-3 TO-220AB TO-225AA

Selected Key Terms
BJT (bipolar a transistor constructed with three doped

junction semiconductor regions separated by two pn
transistor) junctions.
Emitter the most heavily doped of the three

semiconductor regions of a BJT.
Base one of the three semiconductor regions of a BJT.

The base is thin and lightly doped compared to
the other regions.
Collector the largest of the three semiconductor regions of

a BJT.
Selected Key Terms
Beta the ratio of dc collector current to the dc base

current in a BJT; current gain from base to
collector.
Saturation the state of a BJT in which the collector

current has reached a maximum and is
independent of the base current.
Cutoff the nonconducting state of a transistor.


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Basic Electronic Devices and Circuits

Bipolar Junction Transistors (BJTs)

© 2012 Pearson Education. Upper Saddle River, NJ, 07458.

© 2012 Pearson Education. Upper Saddle River, NJ, 07458.

© 2012 Pearson Education. Upper Saddle River, NJ, 07458.

© 2012 Pearson Education. Upper Saddle River, NJ, 07458.

In normal operation, the base-emitter (BE) is forward-

© 2012 Pearson Education. Upper Saddle River, NJ, 07458.

In normal operation, the base-emitter (BE) is forward-

© 2012 Pearson Education. Upper Saddle River, NJ, 07458.

IE = IC + IB © 2012 Pearson Education. Upper Saddle River, NJ, 07458.

• The heavily doped n-type emitter region has a very high

© 2012 Pearson Education. Upper Saddle River, NJ, 07458.

© 2012 Pearson Education. Upper Saddle River, NJ, 07458.

Typical values of βDC range from less than 20 to 200 or higher.

The alpha is a less-used parameter than beta in transistor circuits.

© 2012 Pearson Education. Upper Saddle River, NJ, 07458.

© 2012 Pearson Education. Upper Saddle River, NJ, 07458.

IB: dc base current

VBE: dc voltage at base

© 2012 Pearson Education. Upper Saddle River, NJ, 07458.

The collector characteristic curves show the relationship

increased, IC increases until B.

After C, is the breakdown A

© 2012 Pearson Education. Upper Saddle River, NJ, 07458.

βDC is the ratio of collector IB4

current to base current. IB3

• A family of collector characteristic curves is produced when

• When IB = 0, the transistor is in the cutoff region although

• Cutoff is the non-conducting state of a transistor.

• The amount of collector leakage current for IB = 0 is

© 2012 Pearson Education. Upper Saddle River, NJ, 07458.

What is the βDC for the transistor shown?

© 2012 Pearson Education. Upper Saddle River, NJ, 07458.

In a BJT, cutoff is the condition in which there is no base

The subscript CEO represents

In a BJT, saturation is the condition in which there is

© 2012 Pearson Education. Upper Saddle River, NJ, 07458.

• When the BE junction becomes forward-biased and IB is

© 2012 Pearson Education. Upper Saddle River, NJ, 07458.

The DC load line represents the circuit that is external to

connecting the saturation Saturation

The transistor characteristic

© 2012 Pearson Education. Upper Saddle River, NJ, 07458.

VCC − 0.2 V 15 V − 0.2 V

© 2012 Pearson Education. Upper Saddle River, NJ, 07458.

© 2012 Pearson Education. Upper Saddle River, NJ, 07458.

© 2012 Pearson Education. Upper Saddle River, NJ, 07458.

BJT Switches IC(sat)

A BJT can be used as a switching device

saturation (load is ON). 0 VCE(sat) VCC

+VCC +VCC +VCC +VCC

In cutoff, the transistor In saturation, the transistor

© 2012 Pearson Education. Upper Saddle River, NJ, 07458.

TO-3 TO-220AB TO-225AA

© 2012 Pearson Education. Upper Saddle River, NJ, 07458.

BJT (bipolar a transistor constructed with three doped

Emitter the most heavily doped of the three

Base one of the three semiconductor regions of a BJT.

Collector the largest of the three semiconductor regions of

Beta the ratio of dc collector current to the dc base

Saturation the state of a BJT in which the collector

Cutoff the nonconducting state of a transistor.