Department of Electrical and ECSE-330B Electronic Circuits I

Computer Engineering

Biasing in MOSFET Amplifiers

• Biasing: Creating the circuit to establish the desired
DC voltages and currents for the operation of the
amplifier

• Four common ways:

1. Biasing by fixing VGS
2. Biasing by fixing VG and connecting a resistance in the
Source
3. Biasing using a Drain-to-Gate Feedback Resistor
4. Biasing Using a Constant-Current Source

MOSFETs 1
 Department of Electrical and ECSE-330B Electronic Circuits I
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Biasing in MOSFET Amplifiers

• Biasing by fixing VGS VDD

I D = 12 k n′
W
(VGS − Vt )2 VGG VG
RD
L VD
ε ox RG
k n′ = μ n = μ n Cox
t ox M1
VS

RS

-VEE
When the MOSFET device is
changed (even using the same
supplier), this method can result in
a large variability in the value of
ID. Devices 1 and 2 represent
extremes among units of the same
type.
MOSFETs 2
 Department of Electrical and ECSE-330B Electronic Circuits I
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Biasing in MOSFET Amplifiers

• Biasing by fixing VG and connecting a resistance in the Source

Degeneration Resistance

MOSFETs 3
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Biasing in MOSFET Amplifiers

• Biasing using a Drain-to-Gate Feedback Resistor

Large Resistor

MOSFETs 4
 Department of Electrical and ECSE-330B Electronic Circuits I
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Biasing in MOSFET Amplifiers

• Biasing Using a Constant-Current Source

Current Mirror

Used in Integrated Circuits

Figure 4.33 (a) Biasing the MOSFET using a constant-current source I. (b) Implementation of the constant-current source I
using a current mirror.

MOSFETs 5
 Department of Electrical and ECSE-330B Electronic Circuits I
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Current Mirror DC Analysis

• The width and length (the W/L aspect
ratio) and the parameters of the two
transistors can be different
• We can choose W/L freely
• In this circuit, consider W/L of both
MOSFETs are the same and transistors I
are identical. The Gate-Source voltages
W1
are also the same, then W1
L1 L1
I REF = k n′1 W1
(VGS − Vt )2 + +
VGS VGS
2
L1
I = 12 k n′
W1
(VGS − Vt )2 I
=
W1 L1
⋅ =1
- -
L1 I REF L1 W1
I = I REF
MOSFETs 6
 Department of Electrical and ECSE-330B Electronic Circuits I
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Current Mirror DC Analysis

• Designing IREF

VDD − VGS + VSS

I REF =
R
W1
I REF = 1 ′
k
2 n
(VGS − Vt )2
L1

• It is often needed to find the value of R in order to

achieve a desired IREF

MOSFETs 7
 Department of Electrical and ECSE-330B Electronic Circuits I
Computer Engineering

Biasing of MOSFET Amplifier

• 1- Intro to MOS Field Effect Transistor (MOSFET)
• 2- NMOS FET
• 3- PMOS FET
• 4- DC Analysis of MOSFET Circuits
• 5- MOSFET Amplifier
• 6- MOSFET Small Signal Model
• 7- MOSFET Integrated Circuits
• 8- CSA, CGA, CDA
• 9- CMOS Inverter & MOS Digital Logic

MOSFETs 8
 Department of Electrical and ECSE-330B Electronic Circuits I
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MOSFET Design Space

• Modern integrated circuits use MOSFETs
extensively
– Very high densities of transistors – up to 109
transistors/cm2 in some ULSI memory arrays.
– Off-chip discrete resistors and capacitors are NOT
commonly used
– On-chip resistors and capacitors generally small
– Multistage amplifiers are usually DC-coupled
• Transistors used wherever possible to implement
current sources, resistors, capacitors,

MOSFETs 9
 Department of Electrical and ECSE-330B Electronic Circuits I
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Using MOSFETs to implement R’s and C’s

• Resistors:
Active Loads (large R’s)
Diode-connected loads (small R’s)
MOSFET Triode-Region (moderate R’s)
• Capacitors
Most obvious is the gate-body capacitor
Can be used to have variable-capacitors as well
• Current Mirrors

MOSFETs 10
 Department of Electrical and ECSE-330B Electronic Circuits I
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MOSFET Active Loads

• MOSFETs used as an active load for high resistances:
– MOSFET is held in saturation with the source and gate
held at a constant DC voltage
1
– Drain connected to circuit r =
λ ⋅ ID
o
– ro is inversely proportional to ID

vgs = 0
Rin=ro
gmvgs = 0
Rin= ?
MOSFETs 11
 Department of Electrical and ECSE-330B Electronic Circuits I
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Diode-Connected MOSFETs
• A Diode connected MOSFET can be used to achieve
small resistances:
– The Drain is directly connected to Gate, and therefore it
can only be operated in saturation (or cutoff)

Source Absorption Theorem

MOSFETs 12
 Department of Electrical and ECSE-330B Electronic Circuits I
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MOSFET Current Mirrors

• Used extensively in
MOSFET IC applications
• Often ro,is neglected. Since
there is no gate current, the
drain currents of M1 and M2
are identical VX I
0 0
• In practice, IREF ≠ I due to
finite ro. (Not included in EC1) + +
1 W1 VGS VGS
I REF = k n′ (V X − Vt ) (1 + λV X )
2

2 L1 - -

V X = VGS 1 = VDS 1 The current I will also depend on VDS2

MOSFETs 13
 Department of Electrical and ECSE-330B Electronic Circuits I
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Current Mirror DC Analysis

• The width and length (the W/L
aspect ratio) of MOSFETs can
be designed almost freely
• Since the W/L of M1 and M2
need not be the same, the size I
ratios can affect current ratios
W1 W2
W1
I REF = 12 k n′ (VGS − Vt )2 L1 L2
L1
+ +
W2 VGS VGS
I = k n′
1
(VGS − Vt )2
2
L2 - -
I W2 L1
= ⋅
I REF L2 W1
MOSFETs 14
 Department of Electrical and ECSE-330B Electronic Circuits I
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Current Scaling (Steering)

• Ratio of
aspect ratios
can be
selected to
achieve
W W W W nearly any
L L L L scale factor
I/IREF

Note: All gates are connected

MOSFETs 15
 Department of Electrical and ECSE-330B Electronic Circuits I
Computer Engineering

Current Mirroring – Pushing and Pulling

MOSFETs 16
Department of Electrical and ECSE-330B Electronic Circuits I
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Small Signal
• Transistor M1 is diode
connected and acts like a
resistor to s.-s. ground.

ro2

MOSFETs 17
 Department of Electrical and ECSE-330B Electronic Circuits I
Computer Engineering

Outline of Chapter 5
• 1- Intro to MOS Field Effect Transistor (MOSFET)
• 2- NMOS FET
• 3- PMOS FET
• 4- DC Analysis of MOSFET Circuits
• 5- MOSFET Amplifier
• 6- MOSFET Small Signal Model
• 7- MOSFET Integrated Circuits
• 8- CSA, CGA, CDA
• 9- CMOS Inverter & MOS Digital Logic

MOSFETs 18
 Department of Electrical and ECSE-330B Electronic Circuits I
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DC and AC - Body-Effect / CLM

Three types of analysis:
Neglect DC Body-Effect & DC CLM
Use DC Body-Effect / Neglect DC CLM DC Analysis
Use DC Body-Effect / Use DC CLM Use whatever
DC values for
V and I in the
small-signal
Three types of analysis: analysis
Neglect AC Body-Effect & AC CLM
AC Analysis
Use AC Body-Effect / Neglect AC CLM
(small-signal)
Use AC Body-Effect / Use CLM
MOSFETs 19
 Department of Electrical and ECSE-330B Electronic Circuits I
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Common Source Amplifier (CSA)

• Current source I implemented
with current mirror.
• Current mirror provides
active load at drain
• Source terminal grounded –
no DC or AC Body effect

MOSFETs 20
Department of Electrical and ECSE-330B Electronic Circuits I
Computer Engineering

CSA with Current Mirror

ro2

CSA

MOSFETs 21
Department of Electrical and ECSE-330B Electronic Circuits I
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CSA Small Signal Analysis

• From MOSFET
Current-Mirror:
only ro2 appears in
analysis
v gs1 = vi

vout = − g m1 (ro1 ro 2 )v gs1

= − g m1 (ro1 ro 2 )
vout
AV =
vi
MOSFETs 22
 Department of Electrical and ECSE-330B Electronic Circuits I
Computer Engineering

CSA Input/Output Resistance

• Input Resistance

RIN ⇒ ∞
• Output resistance
vgs1 = 0
gm1vgs1 = 0

ROUT = ro1 ro 2
MOSFETs 23
Department of Electrical and ECSE-330B Electronic Circuits I
Computer Engineering

CSA Calculations
• In practice, difficult to keep all
transistors operating in saturation
VOUT is hard to control, and
sensitive to: W/L, VG, and
CLM
λ1 = λ2 = 0.01V −1 Hand: SPICE:
Vt1 = Vt 2 = 1V VG = 2.567V VG = 2.58V
k ′p = 50μ AV I = 2.596mA I = 2.57mA
k n′ = 125μ AV VOUT = 3.855V VOUT = 2.895V
W2 W g m1 = 5.192m AV AV = −102.4 V V
= 50, 1 = 40
L2 L1 ro = 38.52kΩ
VDD = 5V ,VSS = −2V AV = −100 V V
RREF = 1kΩ

MOSFETs 24
 Department of Electrical and ECSE-330B Electronic Circuits I
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Common Gate Amplifier (CGA)

• A pMOS current mirror is used
as IREF including the output
resistance.
• The gate terminal held at a DC
voltage. (AC Ground)
• Since source terminal not at
signal ground, the body effect is
present.
Typically used as second stage of a
multi-stage amplifier circuit

MOSFETs 25
Department of Electrical and ECSE-330B Electronic Circuits I
Computer Engineering

CGA – DC Analysis
• Current mirror is assumed to be ideal
during the DC analysis, thus IREF=I
• DC voltage at the source terminal (VS)
must be obtained from driving the
current IREF through the transistor.
• This assumes that the input voltage
source VI is set to zero
• RI is part of the source voltage
• Solve for VO, with VS and VG known,
and including CLM
I = 2 k n (VG − VS − Vt ) [1 + λ ⋅ (VO − VS )]
1 ′W 2

L
MOSFETs 26
 Department of Electrical and ECSE-330B Electronic Circuits I
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CGA

• Replace with a current source

including output resistance ro2
ro2

Choice of analysis:

Neglect AC Body-Effect & CLM

Use AC Body-Effect / Neglect CLM

Use AC Body-Effect / Use CLM

MOSFETs 27
 Department of Electrical and ECSE-330B Electronic Circuits I
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CGA – No Body Effect or CLM

vo = − g m v gs ⋅ ro 2
i=0
1
g m1
v gs = − vI
1
+ RI
g m1

vo ro 2
AV = =
vI 1
Non Inverting + RI
gm
MOSFETs 28
 Department of Electrical and ECSE-330B Electronic Circuits I
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CGA – RIN & ROUT, No Body Effect or CLM

1
RIN =
g m1
ROUT

vI = 0
RIN

ROUT = ro 2

MOSFETs 29
 Department of Electrical and ECSE-330B Electronic Circuits I
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CGA – With Body Effect & no CLM

Solve at vx first:
vbs1 = v gs1 = −v x
vX RIN
vo = −(g m1v gs1 + g mb1vbs1 )ro 2

vo = −( g m1v x + g mb1v x )ro 2

vo
AV = = ( g m1 + g mb1 )ro 2
vx
Include RI and
= ( g m + g mb )ro 2 ⋅
solve for total vo vo v x R IN
AV − total = = ⋅
voltage gain in vi v x vi R IN + R I
term of RIN
MOSFETs 30
 Department of Electrical and ECSE-330B Electronic Circuits I
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CGA – RIN With Body Effect & no CLM

iX

vX vbs1 = v gs1 = −v x
RIN
iIN
ix = ( g m1 + g mb1 )v x

iin = ( g m1 + g mb1 )v x

1
Neglect Input RIN =
g m1 + g mb1
Voltage Source
MOSFETs 31
 Department of Electrical and ECSE-330B Electronic Circuits I
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CGA - With Body Effect & CLM

iX
v x = −v gs

vo = ix ⋅ ro 2
vX
iX
v x − vo
i x = ( g m1 + g mb1 )v x +
Neglect Input ro1
Voltage Source ⎛1 ⎞
AV = = (ro1 ro 2 ) ⋅ ⎜⎜ + g m1 + g mb1 ⎟⎟
vo
vx ⎝ ro1 ⎠
MOSFETs 32
 Department of Electrical and ECSE-330B Electronic Circuits I
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CGA – RIN With Body Effect & CLM

iX

vX
RIN vo = ix ⋅ ro 2
v x − vo
ix = ( g m1 + g mb1 )v x +
ro1
ro 2
1+
vx ro1
Neglect Input RIN = =
ix 1
Voltage Source + g m1 + g mb1
ro1
MOSFETs 33