AO4409

30V P-Channel MOSFET

General Description Product Summary

The AO4409 uses advanced trench technology to provide VDS -30V

excellent RDS(ON), and ultra-low low gate charge. This ID (at VGS=-10V) -15A
device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V) < 7.5mΩ
applications.
RDS(ON) (at VGS =-4.5V) < 12mΩ

100% UIS Tested

* RoHS and Halogen-Free Compliant
100% Rg Tested

SOIC-8
D
Top View Bottom View
D
D
D
D

G G
S S
S
S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TA=25°C -15
ID
Current TA=70°C -12.8 A
C
Pulsed Drain Current IDM -80
Avalanche Current C IAS, IAR 30 A
Avalanche energy L=0.3mH C EAS, EAR 135 mJ
TA=25°C 3.1
PD W
Power Dissipation B TA=70°C 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 31 40 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 59 75 °C/W
Maximum Junction-to-Lead Steady-State RθJL 16 24 °C/W

Rev.8.0: July 2013 www.aosmd.com Page 1 of 5

 AO4409

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V
VDS=-30V, VGS=0V -5
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -25
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.4 -1.9 -2.7 V
ID(ON) On state drain current VGS=-10V, VDS=-5V -80 A
VGS=-10V, ID=-15A 6.2 7.5
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 8.2 11.5
VGS=-4.5V, ID=-10A 9.5 12 mΩ
gFS Forward Transconductance VDS=-5V, ID=-15A 35 50 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.71 -1 V
IS Maximum Body-Diode Continuous Current -5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 5270 6400 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 945 pF
Crss Reverse Transfer Capacitance 745 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 2 3 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 100 120 nC
Qg(4.5V) Total Gate Charge 51.5 nC
VGS=-10V, VDS=-15V, ID=-15A
Qgs Gate Source Charge 14.5 nC
Qgd Gate Drain Charge 23 nC
tD(on) Turn-On DelayTime 14 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=1Ω, 16.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 76.5 ns
tf Turn-Off Fall Time 37.5 ns
trr Body Diode Reverse Recovery Time IF=-15A, dI/dt=100A/µs 36.7 45 ns
Qrr Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/µs 28 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.8.0: July 2013 www.aosmd.com Page 2 of 5

 AO4409

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 60
-4V VDS=-5V
50 -4.5V 50
-6V
40 -10V 40
-ID (A)

-ID(A)
30 -3.5V 30

20 20 125°C

10 10 25°C
VGS=-3V
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

12 1.6
ID=-15A
VGS=-4.5V Normalized On-Resistance
10
1.4 VGS=-10V
Ω)
RDS(ON) (mΩ

8
17
1.2 5
6 2
VGS=-10V 10
1 VGS=-4.5V
4

2 0.8
0 5 10 15 20 25 0 25 50 75 100 125 150 175
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

20 1.0E+02
ID=-15A
1.0E+01
15 40
1.0E+00
125°
Ω)
RDS(ON) (mΩ

1.0E-01 125°
-IS (A)

10
25° 1.0E-02
25°
1.0E-03
5
1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

Rev.8.0: July 2013 www.aosmd.com Page 3 of 5

 AO4409

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 8000
VDS=-15V
ID=-15A 7000
8
6000 Ciss

Capacitance (pF)
5000
-VGS (Volts)

6
4000
4 3000

2000 Coss
2
1000
Crss
0 0
0 20 40 60 80 100 120 0 5 10 15 20 25 30
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 10000
TA=25°C
100.0
100µs 1000
RDS(ON)
Power (W)

1ms
-ID (Amps)

10.0 limited
100
10ms
1.0
10
TJ(Max)=150°C 10s
0.1
TA=25°C DC
1
0.0
0.00001 0.001 0.1 10 1000
0.01 0.1 1 10 100
-VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Operating Area (Note F)

10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=75°C/W

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev.8.0: July 2013 www.aosmd.com Page 4 of 5

 AO4409

Gate Charge Test Circuit & Waveform

Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds ton toff

td(on) tr t d(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2
L E AR= 1/2 LIAR
Vds

Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

Rev.8.0: July 2013 www.aosmd.com Page 5 of 5